公开(公告)号：US07187040B2

公开(公告)日：2007-03-06

申请号：US11078581

申请日：2005-03-14

申请人： Shigeto Maegawa ,  Takashi Ipposhi ,  Toshiaki Iwamatsu ,  Shigenobu Maeda ,  Il-Jung Kim ,  Kazuhito Tsutsumi ,  Hirotada Kuriyama ,  Yoshiyuki Ishigaki ,  Motomu Ukita ,  Toshiaki Tsutsumi

发明人： Shigeto Maegawa ,  Takashi Ipposhi ,  Toshiaki Iwamatsu ,  Shigenobu Maeda ,  Il-Jung Kim ,  Kazuhito Tsutsumi ,  Hirotada Kuriyama ,  Yoshiyuki Ishigaki ,  Motomu Ukita ,  Toshiaki Tsutsumi

IPC分类号： H01L29/76 ,  H01L31/113

CPC分类号： H01L29/78609 ,  H01L27/124 ,  H01L29/41733 ,  H01L29/458 ,  H01L29/66757 ,  H01L29/78618 ,  H01L29/78624 ,  H01L29/78639

摘要： Provided are a thin-film transistor formed by connecting polysilicon layers having different conductivity types with each other which prevents occurrence of inconvenience resulting from diffusion of impurities and a method of fabricating the same. A drain (6), a channel (7) and a source (8) are integrally formed on a surface of a second oxide film (4) by polysilicon. The drain (6) is formed to be connected with a pad layer (3) (second polycrystalline semiconductor layer) through a contact hole (5) which is formed to reach an upper surface of the pad layer (3). The pad layer (3) positioned on a bottom portion of the contact hole (5) (opening) is provided with a boron implantation region BR.

摘要翻译： 提供了通过将具有不同导电类型的多晶硅层彼此连接而形成的薄膜晶体管，其防止由杂质扩散引起的不便的发生及其制造方法。 漏极（6），沟道（7）和源极（8）通过多晶硅一体地形成在第二氧化膜（4）的表面上。 漏极（6）形成为通过形成为到达焊盘层（3）的上表面的接触孔（5）与焊盘层（3）（第二多晶半导体层）连接。 定位在接触孔（5）（开口）的底部的衬垫层（3）设置有硼注入区域BR。

公开(公告)号：US07180153B2

公开(公告)日：2007-02-20

申请号：US09983166

申请日：2001-10-23

申请人： Takeshi Kamino ,  Toshiaki Tsutsumi ,  Shuji Kodama ,  Takio Ohno

发明人： Takeshi Kamino ,  Toshiaki Tsutsumi ,  Shuji Kodama ,  Takio Ohno

IPC分类号： H01L29/00

CPC分类号： H01L28/24 ,  H01L23/26 ,  H01L27/0802 ,  H01L2924/0002 ,  H01L2924/00

摘要： There is provided a semiconductor device with a configuration in which a dummy silicide area 11 is provided in the vicinity of a non-silicide area 2 to easily capture residual refractory metals, resulting in an improved yield by preventing the trapping of residual refractory metals into a non-silicide area and thereby reducing a junction leakage within the non-silicide area.

摘要翻译： 提供了一种半导体器件，其具有在非硅化物区域2附近设置虚拟硅化物区域11以容易地捕获残余的难熔金属，从而通过防止将残余难熔金属捕获到 非硅化物区域，从而减少非硅化物区域内的结漏电。

公开(公告)号：US07112854B1

公开(公告)日：2006-09-26

申请号：US08850631

申请日：1997-05-02

申请人： Shigeto Maegawa ,  Takashi Ipposhi ,  Toshiaki Iwamatsu ,  Shigenobu Maeda ,  Il-Jung Kim ,  Kazuhito Tsutsumi ,  Hirotada Kuriyama ,  Yoshiyuki Ishigaki ,  Motomu Ukita ,  Toshiaki Tsutsumi

发明人： Shigeto Maegawa ,  Takashi Ipposhi ,  Toshiaki Iwamatsu ,  Shigenobu Maeda ,  Il-Jung Kim ,  Kazuhito Tsutsumi ,  Hirotada Kuriyama ,  Yoshiyuki Ishigaki ,  Motomu Ukita ,  Toshiaki Tsutsumi

IPC分类号： H01L29/78

CPC分类号： H01L29/78609 ,  H01L27/124 ,  H01L29/41733 ,  H01L29/458 ,  H01L29/66757 ,  H01L29/78618 ,  H01L29/78624 ,  H01L29/78639

摘要： Provided are a thin-film transistor formed by connecting polysilicon layers having different conductivity types with each other which prevents occurrence of inconvenience resulting from diffusion of impurities and a method of fabricating the same. A drain (6), a channel (7) and a source (8) are integrally formed on a surface of a second oxide film (4) by polysilicon. The drain (6) is formed to be connected with a pad layer (3) (second polycrystalline semiconductor layer) through a contact hole (5) which is formed to reach an upper surface of the pad layer (3). The pad layer (3) positioned on a bottom portion of the contact hole (5) (opening) is provided with a boron implantation region BR.

摘要翻译： 提供了通过将具有不同导电类型的多晶硅层彼此连接而形成的薄膜晶体管，其防止由杂质扩散引起的不便的发生及其制造方法。 漏极（6），沟道（7）和源极（8）通过多晶硅一体地形成在第二氧化膜（4）的表面上。 漏极（6）形成为通过形成为到达焊盘层（3）的上表面的接触孔（5）与焊盘层（3）（第二多晶半导体层）连接。 定位在接触孔（5）（开口）的底部的衬垫层（3）设置有硼注入区域BR。

公开(公告)号：US06657265B2

公开(公告)日：2003-12-02

申请号：US09984532

申请日：2001-10-30

申请人： Masahiko Fujisawa ,  Kenichi Mori ,  Toshiaki Tsutsumi

发明人： Masahiko Fujisawa ,  Kenichi Mori ,  Toshiaki Tsutsumi

IPC分类号： H01L2972

CPC分类号： H01L21/76843 ,  H01L21/28052 ,  H01L21/28518 ,  H01L21/823814 ,  H01L21/823835 ,  H01L27/10873 ,  H01L27/10894 ,  H01L29/456 ,  H01L29/665

摘要： A semiconductor device includes metal silicide films formed on the surface of a source-drain region and of a gate electrode. On the metal silicide films, impurity regions are formed of a conductivity type opposite to the conductivity type of the source-drain region. This structure enables the contact resistance at the interfaces between contact layers and the metal silicide films even when the semiconductor integrated circuit is scaled down, thereby providing a high-speed semiconductor device and its manufacturing method.

公开(公告)号：US06281051B1

公开(公告)日：2001-08-28

申请号：US09541629

申请日：2000-04-03

申请人： Toshiaki Tsutsumi

发明人： Toshiaki Tsutsumi

IPC分类号： H01L218232

CPC分类号： H01L27/10873 ,  H01L21/76895 ,  H01L21/76897 ,  H01L21/8232 ,  H01L23/485 ,  H01L2924/0002 ,  H01L2924/3011 ,  Y10S257/903 ,  Y10S257/906 ,  Y10S257/907 ,  Y10S257/908 ,  H01L2924/00

摘要： An object is to provide a structure of a semiconductor device which allows higher degree of integration both in vertical and horizontal directions, and to provide manufacturing method therefor. The semiconductor device includes source·drain electrodes connected to n− and n+ source·drain regions of an MISFET and has a function as a part of a bit line, and a gate electrode connected to a first interconnection as a word line. Electrodes are insulated from each other by a sidewall insulating film, silicon oxide film or a silicon nitride film provided inbetween. Since the word line and the bit line do not cross in the same plane, the difference in level in the vertical direction can be reduced.

摘要翻译： 本发明的目的是提供一种半导体器件的结构，其能够在垂直和水平方向上实现更高程度的集成，并提供其制造方法。 半导体器件包括连接到MISFET的n +和n +源极区域的源极电极，并且具有作为位线的一部分的功能，以及连接到作为字线的第一互连的栅电极。 电极通过其间设置的侧壁绝缘膜，氧化硅膜或氮化硅膜彼此绝缘。 由于字线和位线在同一平面上不交叉，所以可以减小垂直方向上的电平差。

公开(公告)号：US07321152B2

公开(公告)日：2008-01-22

申请号：US11498800

申请日：2006-08-04

申请人： Shigeto Maegawa ,  Takashi Ipposhi ,  Toshiaki Iwamatsu ,  Shigenobu Maeda ,  Il-Jung Kim ,  Kazuhito Tsutsumi ,  Hirotada Kuriyama ,  Yoshiyuki Ishigaki ,  Motomu Ukita ,  Toshiaki Tsutsumi

发明人： Shigeto Maegawa ,  Takashi Ipposhi ,  Toshiaki Iwamatsu ,  Shigenobu Maeda ,  Il-Jung Kim ,  Kazuhito Tsutsumi ,  Hirotada Kuriyama ,  Yoshiyuki Ishigaki ,  Motomu Ukita ,  Toshiaki Tsutsumi

IPC分类号： H01L29/76 ,  H01L31/113

CPC分类号： H01L29/78609 ,  H01L27/124 ,  H01L29/41733 ,  H01L29/458 ,  H01L29/66757 ,  H01L29/78618 ,  H01L29/78624 ,  H01L29/78639

摘要： Provided are a thin-film transistor formed by connecting polysilicon layers having different conductivity types with each other which prevents occurrence of inconvenience resulting from diffusion of impurities and a method of fabricating the same.A drain (6), a channel (7) and a source (8) are integrally formed on a surface of a second oxide film (4) by polysilicon. The drain (6) is formed to be connected with a pad layer (3) (second polycrystalline semiconductor layer) through a contact hole (5) which is formed to reach an upper surface of the pad layer (3). The pad layer (3) positioned on a bottom portion of the contact hole (5) (opening) is provided with a boron implantation region BR.

摘要翻译： 提供了通过将具有不同导电类型的多晶硅层彼此连接而形成的薄膜晶体管，其防止由杂质扩散引起的不便的发生及其制造方法。 漏极（6），沟道（7）和源极（8）通过多晶硅一体地形成在第二氧化膜（4）的表面上。 漏极（6）形成为通过形成为到达焊盘层（3）的上表面的接触孔（5）与焊盘层（3）（第二多晶半导体层）连接。 定位在接触孔（5）（开口）的底部的衬垫层（3）设置有硼注入区域BR。

公开(公告)号：US5844274A

公开(公告)日：1998-12-01

申请号：US623035

申请日：1996-03-28

申请人： Toshiaki Tsutsumi

发明人： Toshiaki Tsutsumi

IPC分类号： H01L21/76 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/336 ,  H01L21/60 ,  H01L21/768 ,  H01L29/10 ,  H01L29/417 ,  H01L29/423 ,  H01L29/78 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113

CPC分类号： H01L21/76852 ,  H01L21/28525 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76895 ,  H01L21/76897 ,  H01L29/41725 ,  H01L29/41783 ,  H01L29/4238 ,  H01L29/66537 ,  H01L29/6659 ,  H01L29/1083 ,  H01L29/41775 ,  H01L29/7833

摘要： A semiconductor device and a method of manufacturing the same provide a structure which can be easily integrated to a higher extent without providing an alignment margin taking an alignment accuracy of photolithography into consideration. In the semiconductor device, a gate electrode and a pair of source/drain electrodes are formed inside a transistor opening formed at first and second insulating films forming a flat element isolating film. Thereby, an end of the gate electrode in the width direction is defined in an aligned manner by the transistor opening in the step of forming the gate electrode so that it is not necessary to provide the alignment margin taking the alignment accuracy into consideration. This allows high integration.

摘要翻译： 半导体器件及其制造方法提供了一种结构，其可以容易地集成到更高的程度上，而不需要考虑采用光刻的对准精度的取向余量。 在半导体器件中，在形成有形成平坦元件隔离膜的第一绝缘膜和第二绝缘膜的晶体管开口内形成栅极电极和一对源极/漏极电极。 由此，栅电极的宽度方向的端部在形成栅电极的步骤中通过晶体管开口以对准的方式限定，使得不需要考虑对准精度来提供取向裕度。 这允许高集成度。

公开(公告)号：US08968062B2

公开(公告)日：2015-03-03

申请号：US13061864

申请日：2009-08-24

申请人： Toshiaki Tsutsumi ,  Takayuki Arai ,  Masayuki Murase ,  Daisuke Araki

发明人： Toshiaki Tsutsumi ,  Takayuki Arai ,  Masayuki Murase ,  Daisuke Araki

IPC分类号： B60H1/24 ,  B60H1/00

CPC分类号： B60H1/00849 ,  B60H1/00671 ,  B60H2001/00085 ,  B60H2001/00614 ,  B60H2001/00721

摘要： A vehicle air conditioner provided with an airflow structure for an intake box, wherein, in an HVAC comprising, in an intake box, a control device for controlling the number of rotation, the control device is reliably cooled by airflow regardless of the ratio of mixing between internal air and external air. A vehicle air conditioner of center-concentrated type, wherein a control device (6) for controlling the number of rotation is mounted to a vehicle interior-side wall surface inside an intake box (2) and wherein an air delivery guide (22) is provided in the intake box (2), the air delivery guide (22) delivering to the control device (6) a part of air introduced from a direction crossing the direction of opening of a suction opening (7) of a blower (8).

摘要翻译： 一种车辆空调装置，其具有用于进气箱的气流结构，其中，在HVAC中，在进气箱中包括用于控制旋转次数的控制装置，所述控制装置通过气流可靠地冷却，而与混合比无关 内部空气和外部空气之间。 一种中心集中式的车辆用空调装置，其特征在于，在进气箱（2）的内部的车辆内侧壁面上安装有用于控制旋转数的控制装置（6），其中，空气排出导向件（22）为 设置在所述进气箱（2）中的所述空气输送引导件（22）将从与鼓风机（8）的吸入口（7）的打开方向相交叉的方向引入的空气的一部分输送到所述控制装置（6） 。

公开(公告)号：US20080272461A1

公开(公告)日：2008-11-06

申请号：US12213957

申请日：2008-06-26

申请人： Takeshi Kamino ,  Toshiaki Tsutsumi ,  Shuji Kodama ,  Takio Ohno

发明人： Takeshi Kamino ,  Toshiaki Tsutsumi ,  Shuji Kodama ,  Takio Ohno

IPC分类号： H01L29/00

CPC分类号： H01L28/24 ,  H01L23/26 ,  H01L27/0802 ,  H01L2924/0002 ,  H01L2924/00

摘要： There is provided a semiconductor device with a configuration in which a dummy silicide area 11 is provided in the vicinity of a non-silicide area 2 to easily capture residual refractory metals, resulting in an improved yield by preventing the trapping of residual refractory metals into a non-silicide area and thereby reducing a junction leakage within the non-silicide area.

公开(公告)号：US07408239B2

公开(公告)日：2008-08-05

申请号：US11650978

申请日：2007-01-09

申请人： Takeshi Kamino ,  Toshiaki Tsutsumi ,  Shuji Kodama ,  Takio Ohno

发明人： Takeshi Kamino ,  Toshiaki Tsutsumi ,  Shuji Kodama ,  Takio Ohno

IPC分类号： H01L29/00

CPC分类号： H01L28/24 ,  H01L23/26 ,  H01L27/0802 ,  H01L2924/0002 ,  H01L2924/00

摘要： There is provided a semiconductor device with a configuration in which a dummy silicide area 11 is provided in the vicinity of a non-silicide area 2 to easily capture residual refractory metals, resulting in an improved yield by preventing the trapping of residual refractory metals into a non-silicide area and thereby reducing a junction leakage within the non-silicide area.

摘要翻译： 提供了一种半导体器件，其具有在非硅化物区域2附近设置虚拟硅化物区域11以容易地捕获残余的难熔金属，从而通过防止将残余难熔金属捕获到 非硅化物区域，从而减少非硅化物区域内的结漏电。