公开(公告)号：US07215067B2

公开(公告)日：2007-05-08

申请号：US10772260

申请日：2004-02-06

申请人： Toshihiro Ifuku ,  Tetsuro Fukui ,  Takanori Matsuda

发明人： Toshihiro Ifuku ,  Tetsuro Fukui ,  Takanori Matsuda

IPC分类号： H01L41/04 ,  H01L41/16 ,  H01L41/24

CPC分类号： H01L41/094 ,  H01L41/316

摘要： A ferroelectric thin film element comprises a substrate and an epitaxial ferroelectric thin film provided on the substrate. The thin film satisfies z/z0>1.003 and 0.997≦x/x0≦1.003, where a crystal face of said thin film parallel to a crystal face of a surface of the substrate is taken as a Z crystal face, a face spacing of the Z crystal face is taken as z, a face spacing of the Z crystal face of a material constituting the thin film in a bulk state is taken as z0, a crystal face of the thin film perpendicular to the Z crystal face is taken as an X crystal face, a face spacing of the X crystal face is taken as x and a face spacing of the X crystal face of the material constituting the thin film in a bulk state is taken as x0.

摘要翻译： 铁电薄膜元件包括设置在基板上的基板和外延铁电薄膜。 薄膜满足z / z 0 > 1.003和0.997 <= X / X 0 <= 1.003，其中所述薄膜的晶面平行于晶体面 将基板的表面作为Z晶面，将Z晶面的面间隔作为z，将构成薄膜的材料的Z晶面的面间距设为z状， SUB> 0 ，将与Z晶面垂直的薄膜的晶面视为X晶面，将X晶面的面间距设为x，X晶面的面间距 构成薄膜的大块状态的材料为x <0>。

公开(公告)号：US20070048190A1

公开(公告)日：2007-03-01

申请号：US11463537

申请日：2006-08-09

申请人： Toshihiro Ifuku ,  Takanori Matsuda ,  Katsumi Aoki

发明人： Toshihiro Ifuku ,  Takanori Matsuda ,  Katsumi Aoki

IPC分类号： B01L3/02

CPC分类号： B41J2/14233 ,  B41J2/161 ,  B41J2/1628 ,  B41J2/1631 ,  B41J2/1646 ,  H01L41/1876 ,  H01L41/316

摘要： A piezoelectric material, characterized in that a main component of the piezoelectric substance is PZT which has perovskite type structure expressed in Pb(ZrxTi1-x)O3 (1) (x expresses an element ratio Zr/(Zr+Ti) of Zr and Ti in the formula), an element ratio Pb/(Zr+Ti) of Pb, Zr and Ti of the piezoelectric substance is 1.05 or more, and an element ratio Zr/(Zr+Ti) of Zr and Ti is 0.2 to 0.8 inclusive, and a Curie temperature Tc of the piezoelectric substance and a Curie temperature Tc0 in a bulk at an element ratio of Zr and Ti of the piezoelectric substance satisfy relation of Tc>Tc0+50° C.

摘要翻译： 一种压电材料，其特征在于，所述压电体的主要成分是PZT，该PZT具有以Pb（Zr x Ti 1-x O）O O 2表示的钙钛矿型结构， 3（1）（x表示式中的Zr和Ti的元素比Zr /（Zr + Ti）），压电体的Pb，Zr，Ti的元素比Pb /（Zr + Ti） 为1.05以上，Zr和Ti的元素比Zr /（Zr + Ti）为0.2〜0.8，另外，在a的情况下，压电体的居里温度Tc和居里温度Tc <0 < 压电体的Zr和Ti的元素比的体积满足Tc> Tc <0> + 50℃的关系。

公开(公告)号：US07045935B2

公开(公告)日：2006-05-16

申请号：US10632913

申请日：2003-08-04

申请人： Takanori Matsuda ,  Kenichi Takeda ,  Toshihiro Ifuku ,  Kiyotaka Wasa

发明人： Takanori Matsuda ,  Kenichi Takeda ,  Toshihiro Ifuku ,  Kiyotaka Wasa

IPC分类号： H01L41/047

CPC分类号： B41J2/161 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1642 ,  B41J2/1645 ,  B41J2/1646 ,  B41J2202/03 ,  B41J2202/11 ,  H01L41/0478 ,  H01L41/0973 ,  H01L41/1875 ,  H01L41/314

摘要： An actuator comprises a laminated structure having a vibration plate, a lower electrode, a piezoelectric element, and an upper electrode laminated sequentially on a basic element, and then, at least the lower electrode of the two electrodes is a thin oxide film doped with La of single orientated crystal or monocrystal that contains Sr and Ti. Thus, it is made possible to materialize the micro miniaturized actuator having a strong structure of lamination with high adhesion, which is capable of obtaining large displacement with sufficient durability without spoiling the piezo-electrostrictive property thereof even with the small thickness of the piezoelectric element. With the micro miniaturized actuator thus structured, it is made possible to make a liquid discharge head more precisely.

摘要翻译： 致动器包括具有振动板，下电极，压电元件和上电极的层压结构，其顺序层压在基本元件上，然后至少两个电极的下电极是掺杂有La的薄氧化膜 的单取向晶体或含有Sr和Ti的单晶。 因此，可以实现具有高粘合性的具有强的层叠结构的微小型致动器，其能够以足够的耐久性获得大的位移，而不会破坏其压电元件的较小厚度的压电电致伸缩性能。 通过这样构造的微小型致动器，可以更精确地制造液体排出头。

公开(公告)号：US20050219793A1

公开(公告)日：2005-10-06

申请号：US11062586

申请日：2005-02-23

申请人： Takanori Matsuda ,  Toshihiro Ifuku ,  Tetsuro Fukui ,  Kiyotaka Wasa

发明人： Takanori Matsuda ,  Toshihiro Ifuku ,  Tetsuro Fukui ,  Kiyotaka Wasa

IPC分类号： B41J2/045 ,  B41J2/01 ,  B41J2/055 ,  B41J2/135 ,  B41J2/14 ,  B41J2/145 ,  B41J2/16 ,  H01G4/06 ,  H01G4/10 ,  H01G4/12 ,  H01L41/09 ,  H01L41/18 ,  H01L41/187 ,  H01L41/22 ,  H01L41/316 ,  H01L41/39 ,  H02N2/00

CPC分类号： H01G4/1227 ,  B41J2/14233 ,  B41J2/161 ,  B41J2/1634 ,  B41J2/1642 ,  B41J2/1646 ,  B41J2002/14258 ,  H01G4/10 ,  H01L41/0973 ,  H01L41/1875 ,  H01L41/316 ,  H01L41/319

摘要： A dielectric element in which a substrate, a lower electrode layer, a dielectric layer and an upper electrode layer are provided in this order, wherein the dielectric layer has a first dielectric layer of which major component is an oxide and provided on a side of said lower electrode layer, and a second dielectric layer of which major component is an oxide and provided on a side of said upper electrode layer, and the second dielectric layer is thicker than the first dielectric layer, and a formula (1) described below is satisfied when a dielectric constant of the first dielectric layer at 25° C. is ε1 and a dielectric constant of the second dielectric layer at 25° C. is ε2. ε1/ε2≧0.9  (1)

摘要翻译： 依次提供基板，下电极层，电介质层和上电极层的电介质元件，其中介电层具有主要成分为氧化物的第一电介质层，并设置在所述电介质层的一侧 下电极层和第二电介质层，其主要成分是氧化物，并且设置在所述上​​电极层的一侧，并且第二电介质层比第一电介质层厚，并且满足下述公式（1） 当第二电介质层在25℃下的介电常数为ε1，第二电介质层的介电常数在25℃时为ε2。 <？in-line-formula description =“In-line Formulas”end =“lead”？> epsilon1 / epsilon2 = 0.9（1）<？in-line-formula description =“In-line Formulas”end =“tail “？>

公开(公告)号：US08142678B2

公开(公告)日：2012-03-27

申请号：US11499722

申请日：2006-08-07

申请人： Takanori Matsuda ,  Katsumi Aoki ,  Toshihiro Ifuku ,  Kenichi Takeda ,  Tetsuro Fukui ,  Hiroshi Funakubo ,  Shintaro Yokoyama

发明人： Takanori Matsuda ,  Katsumi Aoki ,  Toshihiro Ifuku ,  Kenichi Takeda ,  Tetsuro Fukui ,  Hiroshi Funakubo ,  Shintaro Yokoyama

IPC分类号： C04B35/00

CPC分类号： C04B35/499 ,  C04B35/472 ,  C04B2235/3206 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3224 ,  C04B2235/3227 ,  C04B2235/3234 ,  C04B2235/3251 ,  C04B2235/3258 ,  C04B2235/3272 ,  C04B2235/3275 ,  C04B2235/3279 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3293 ,  C04B2235/3294 ,  C04B2235/3298 ,  C04B2235/76 ,  C04B2235/762 ,  C04B2235/765 ,  C04B2235/768 ,  C04B2235/787 ,  C04B2235/79 ,  H01L41/0973 ,  H01L41/1875 ,  H01L41/316

摘要： A perovskite type oxide of a single crystal structure or a uniaxial-oriented crystal structure is represented by ABO3. Site A includes Pb as a main component and site B includes a plurality of elements. The perovskite type oxide includes a plurality of crystal phases selected from the group consisting of tetragonal, rhombohedral, orthorhombic, cubic, pseudo-cubic and monoclinic systems and the plurality of crystal phases are oriented in the direction of .

摘要翻译： 由ABO3表示单晶结构或单轴取向晶体结构的钙钛矿型氧化物。 场地A包括Pb作为主要成分，场地B包括多个元素。 钙钛矿型氧化物包括选自四方晶系，菱方晶，斜方晶，立方晶，假立方晶系和单斜晶系的多个结晶相，多个结晶相朝<100>方向取向。

公开(公告)号：US07999441B2

公开(公告)日：2011-08-16

申请号：US12237933

申请日：2008-09-25

申请人： Katsumi Aoki ,  Kenichi Takeda ,  Toshihiro Ifuku ,  Takanori Matsuda ,  Tetsuro Fukui

发明人： Katsumi Aoki ,  Kenichi Takeda ,  Toshihiro Ifuku ,  Takanori Matsuda ,  Tetsuro Fukui

IPC分类号： H01L41/04

CPC分类号： B41J2/14233 ,  B41J2202/03 ,  H01L41/0478 ,  H01L41/0973 ,  H01L41/1875 ,  H01L41/316 ,  H01L41/319

摘要： The piezoelectric actuator includes a piezoelectric film between two electrode layers and a diaphragm. Assuming that: each elastic coefficient of all materials is isotropic and a distortion amount of the piezoelectric film by an electric field is isotropic in all in-plane directions; a point located on a diaphragm surface and having a maximum displacement when a predetermined electric field is applied to distort the piezoelectric film, is expressed by PδMAX; and a point located on a circumference of a reference-circle having PδMAX as a center and having a minimum difference in displacement from PδMAX is expressed by PδA, the diaphragm has a shape capable of determining an axis A1 set in a straight-line joining PδMAX and PδA, the diaphragm comprises a single-crystalline-material in which a plane orthogonal to A1 and perpendicular to an axis A2 on the diaphragm surface, is a {110}-plane, and the piezoelectric film is a {100}-single-orientation film.

摘要翻译： 压电致动器包括在两个电极层和隔膜之间的压电膜。 假设：所有材料的每个弹性系数是各向同性的，并且通过电场的压电膜的失真量在所有面内方向都是各向同性的; 当施加预定电场以使压电膜失真时，位于膜片表面上并具有最大位移的点由PδMAX表示; 以PδMAX为中心并且具有与PδMAX的位移的最小差异的基准圆的圆周上的点由PδA表示，所述隔膜具有能够确定在直线接合PδMAX中设定的轴A1的形状 和PδA，所述隔膜包括其中与A1正交并垂直于所述膜表面上的轴线A2的平面为{110}面的单晶材料，并且所述压电膜为{100} - 单晶材料， 定向电影。

公开(公告)号：US07528532B2

公开(公告)日：2009-05-05

申请号：US11464993

申请日：2006-08-16

申请人： Toshihiro Ifuku ,  Katsumi Aoki ,  Takanori Matsuda ,  Hiroshi Funakubo ,  Shintaro Yokoyama ,  Satoshi Okamoto

发明人： Toshihiro Ifuku ,  Katsumi Aoki ,  Takanori Matsuda ,  Hiroshi Funakubo ,  Shintaro Yokoyama ,  Satoshi Okamoto

IPC分类号： H01L41/08

CPC分类号： H01L41/316 ,  B41J2/14233 ,  B41J2/161 ,  B41J2/1623 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1632 ,  B41J2/1634 ,  B41J2/1642 ,  B41J2/1646 ,  H01L41/0973 ,  H01L41/187

摘要： The present invention provides a piezoelectric substance of single crystal or uniaxial crystal type in which three lattice lengths a, b and c of a unit lattice of the piezoelectric substance are smaller than lattice length a0, b0 and c0 of a unit lattice of a bulk state of single crystal having the same temperature and same composition, respectively, and a volume of the unit lattice of the piezoelectric substance is smaller than a volume of the unit lattice of the bulk state of single crystal having the same temperature and same composition.

摘要翻译： 本发明提供一种单晶或单轴晶体型压电体，其中压电体的单位晶格的三个格子长度a，b和c小于体状单位晶格的晶格长度a0，b0和c0 具有相同温度和相同组成的单晶，并且压电体的单位晶格的体积小于具有相同温度和相同组成的单晶体状态的单位晶格的体积。

公开(公告)号：US20090091215A1

公开(公告)日：2009-04-09

申请号：US12237933

申请日：2008-09-25

申请人： Katsumi Aoki ,  Kenichi Takeda ,  Toshihiro Ifuku ,  Takanori Matsuda ,  Tetsuro Fukui

发明人： Katsumi Aoki ,  Kenichi Takeda ,  Toshihiro Ifuku ,  Takanori Matsuda ,  Tetsuro Fukui

IPC分类号： H01L41/00

CPC分类号： B41J2/14233 ,  B41J2202/03 ,  H01L41/0478 ,  H01L41/0973 ,  H01L41/1875 ,  H01L41/316 ,  H01L41/319

摘要： The piezoelectric actuator includes a piezoelectric film between two electrode layers and a diaphragm. Assuming that: each elastic coefficient of all materials is isotropic and a distortion amount of the piezoelectric film by an electric field is isotropic in all in-plane directions; a point located on a diaphragm surface and having a maximum displacement when a predetermined electric field is applied to distort the piezoelectric film, is expressed by PδMAX; and a point located on a circumference of a reference-circle having PδMAX as a center and having a minimum difference in displacement from PδMAX is expressed by PδA, the diaphragm has a shape capable of determining an axis A1 set in a straight-line joining PδMAX and PδA, the diaphragm comprises a single-crystalline-material in which a plane orthogonal to A1 and perpendicular to an axis A2 on the diaphragm surface, is a {110}-plane, and the piezoelectric film is a {100}-single-orientation film.

摘要翻译： 压电致动器包括在两个电极层和隔膜之间的压电膜。 假设：所有材料的每个弹性系数是各向同性的，并且通过电场的压电膜的失真量在所有面内方向都是各向同性的; 位于膜片表面上并且当施加预定电场以使压电膜失真时具有最大位移的点由PdeltaMAX表示; 并且位于具有PdeltaMAX作为中心并且具有与PdeltaMAX的位移的最小差异的参考圆的圆周上的点由PdeltaA表示，所述隔膜具有能够确定在连接PdeltaMAX的直线中设置的轴A1的形状 和PdeltaA，隔膜包括其中与A1正交并垂直于膜片表面上的轴线A2的平面为{110}面的单晶材料，并且压电膜为{100} - 单晶材料， 定向电影。

公开(公告)号：US20070215715A1

公开(公告)日：2007-09-20

申请号：US11683100

申请日：2007-03-07

申请人： Tetsuro Fukui ,  Kenichi Takeda ,  Katsumi Aoki ,  Toshihiro Ifuku ,  Takanori Matsuda ,  Hiroshi Funakubo ,  Shintaro Yokoyama ,  Takashi Katoda ,  Ken Nishida

发明人： Tetsuro Fukui ,  Kenichi Takeda ,  Katsumi Aoki ,  Toshihiro Ifuku ,  Takanori Matsuda ,  Hiroshi Funakubo ,  Shintaro Yokoyama ,  Takashi Katoda ,  Ken Nishida

IPC分类号： B05B1/08

CPC分类号： B41J2/14233 ,  B41J2202/03 ,  H01L41/1876

摘要： The invention is to provide an optical element satisfactory in transparency and characteristics as an optical modulation element, and a piezoelectric substance element satisfactory in precision and reproducibility as a fine element such as MEMS. The piezoelectric substance element includes, on a substrate, at least a first electrode, a piezoelectric substance film and a second electrode; wherein the piezoelectric substance film does not contain a layer-structured boundary plane; the crystal phase constituting the piezoelectric substance film comprises at least two of a tetragonal, a rhombohedral, a pseudocubic, an orthorhombic and a monoclinic; and the piezoelectric substance film includes, in a portion in which a change in the composition is within a range of ±2%, a portion where a proportion of the different crystal phases changes gradually in a thickness direction of the film.

摘要翻译： 本发明提供一种作为光调制元件的透明性和特性令人满意的光学元件，以及作为微细元件如MEMS的精度和再现性良好的压电体元件。 压电体元件在基板上至少包括第一电极，压电体膜和第二电极; 其中所述压电物质膜不包含层结构的边界面; 构成压电体膜的晶相包含四方晶，菱方，假立方，斜方晶和单斜晶中的至少两种; 并且压电体膜在组成的变化范围为±2％的范围内包括不同结晶相的比例在膜的厚度方向上逐渐变化的部分。

公开(公告)号：US20070046153A1

公开(公告)日：2007-03-01

申请号：US11464565

申请日：2006-08-15

申请人： Takanori Matsuda ,  Toshihiro Ifuku

发明人： Takanori Matsuda ,  Toshihiro Ifuku

IPC分类号： H01L41/187

CPC分类号： C04B35/491 ,  B41J2/161 ,  B41J2/1634 ,  B41J2/1642 ,  B41J2/1646 ,  B41J2202/03 ,  C04B2235/3208 ,  C04B2235/3215 ,  C04B2235/3227 ,  C04B2235/3258 ,  C04B2235/3294 ,  C04B2235/3298 ,  C04B2235/76 ,  C04B2235/762 ,  C04B2235/765 ,  C04B2235/768 ,  H01L41/18 ,  H01L41/1876 ,  Y10T29/42

摘要： A piezoelectric substrate of a perovskite-type oxide is expressed by a general formula of ABO3 having a laminate structure of a single crystal structure or a uniaxial crystal structure expressed by (Pb1-xMx)xm(ZryTi1-y)O3 (where M represents an element selected from La, Ca, Ba, Sr, Bi, Sb and W) and the laminate structure has a layered first crystal phase having a crystal structure selected from the tetragonal structure, the rhombohedral structure, the pseudocubic structure and the monoclinic structure, a layered second crystal phase having a crystal structure different from the crystal structure of said first crystal phase and a boundary layer arranged between said first crystal phase and said second crystal phase with a crystal structure gradually changing in a width direction of layer.

摘要翻译： 钙钛矿型氧化物的压电基板由具有单晶结构或单轴晶体结构的层叠结构的ABO 3 3通式表示，所述单晶结构由（Pb 1-x < （x，y）y（x）y（x）y（x） SUB>（其中M表示选自La，Ca，Ba，Sr，Bi，Sb和W的元素），层压结构具有层状结晶相，其具有从四方结构，菱方结构，假立方结构 结构和单斜晶体结构，具有不同于所述第一晶相的晶体结构的晶体结构的层状第二晶相和布置在所述第一晶相和所述第二晶相之间的边界层，晶体结构在宽度方向上逐渐变化 的层。