公开(公告)号：US07309950B1

公开(公告)日：2007-12-18

申请号：US11564643

申请日：2006-11-29

申请人： Katsumi Aoki ,  Kenichi Takeda ,  Toshihiro Ifuku ,  Takanori Matsuda ,  Hiroshi Funakubo ,  Shintaro Yokoyama ,  Satoshi Okamoto

发明人： Katsumi Aoki ,  Kenichi Takeda ,  Toshihiro Ifuku ,  Takanori Matsuda ,  Hiroshi Funakubo ,  Shintaro Yokoyama ,  Satoshi Okamoto

IPC分类号： H01L41/08

CPC分类号： B41J2/14233 ,  B41J2/161 ,  B41J2/1628 ,  B41J2/1632 ,  B41J2/1642 ,  B41J2/1646 ,  H01L41/0986 ,  H01L41/1875 ,  H01L41/316

摘要： A piezoelectric device includes a piezoelectric member and a pair of electrodes, and for piezoelectric constants d33 and d31 of the piezoelectric member, the following relational expression (I) is established: 0.1≦|d33/d31|≦1.8.   (I)

摘要翻译： 压电元件包括​​压电元件和一对电极，并且对于压电元件的压电常数d 33和d 31，建立如下关系式（I） ：<？in-line-formula description =“In-line Formulas”end =“lead”？> 0.1 <= | d> 33 31 。 （I）<？in-line-formula description =“In-line Formulas”end =“tail”？>

公开(公告)号：US07528532B2

公开(公告)日：2009-05-05

申请号：US11464993

申请日：2006-08-16

申请人： Toshihiro Ifuku ,  Katsumi Aoki ,  Takanori Matsuda ,  Hiroshi Funakubo ,  Shintaro Yokoyama ,  Satoshi Okamoto

发明人： Toshihiro Ifuku ,  Katsumi Aoki ,  Takanori Matsuda ,  Hiroshi Funakubo ,  Shintaro Yokoyama ,  Satoshi Okamoto

IPC分类号： H01L41/08

CPC分类号： H01L41/316 ,  B41J2/14233 ,  B41J2/161 ,  B41J2/1623 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1632 ,  B41J2/1634 ,  B41J2/1642 ,  B41J2/1646 ,  H01L41/0973 ,  H01L41/187

摘要： The present invention provides a piezoelectric substance of single crystal or uniaxial crystal type in which three lattice lengths a, b and c of a unit lattice of the piezoelectric substance are smaller than lattice length a0, b0 and c0 of a unit lattice of a bulk state of single crystal having the same temperature and same composition, respectively, and a volume of the unit lattice of the piezoelectric substance is smaller than a volume of the unit lattice of the bulk state of single crystal having the same temperature and same composition.

摘要翻译： 本发明提供一种单晶或单轴晶体型压电体，其中压电体的单位晶格的三个格子长度a，b和c小于体状单位晶格的晶格长度a0，b0和c0 具有相同温度和相同组成的单晶，并且压电体的单位晶格的体积小于具有相同温度和相同组成的单晶体状态的单位晶格的体积。

公开(公告)号：US20070046154A1

公开(公告)日：2007-03-01

申请号：US11464993

申请日：2006-08-16

申请人： Toshihiro Ifuku ,  Katsumi Aoki ,  Takanori Matsuda ,  Hiroshi Funakubo ,  Shintaro Yokoyama ,  Satoshi Okamoto

发明人： Toshihiro Ifuku ,  Katsumi Aoki ,  Takanori Matsuda ,  Hiroshi Funakubo ,  Shintaro Yokoyama ,  Satoshi Okamoto

IPC分类号： H01L41/187

CPC分类号： H01L41/316 ,  B41J2/14233 ,  B41J2/161 ,  B41J2/1623 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1632 ,  B41J2/1634 ,  B41J2/1642 ,  B41J2/1646 ,  H01L41/0973 ,  H01L41/187

摘要： The present invention provides a piezoelectric substance of single crystal or uniaxial crystal type in which three lattice lengths a, b and c of a unit lattice of the piezoelectric substance are smaller than lattice length a0, b0 and c0 of a unit lattice of a bulk state of single crystal having the same temperature and same composition, respectively, and a volume of the unit lattice of the piezoelectric substance is smaller than a volume of the unit lattice of the bulk state of single crystal having the same temperature and same composition.

摘要翻译： 本发明提供一种单晶或单轴晶体的压电体，其中压电体的单位晶格的三个格子长度a，b和c小于晶格长度a ，b _{0 和c <0>，并且压电体的单位晶格的体积更小 比具有相同温度和相同组成的单晶体状态的单位晶格的体积。}

公开(公告)号：US07804231B2

公开(公告)日：2010-09-28

申请号：US11677267

申请日：2007-02-21

申请人： Toshihiro Ifuku ,  Katsumi Aoki ,  Takanori Matsuda ,  Hiroshi Funakubo ,  Shintaro Yokoyama ,  Yong Kwan Kim ,  Hiroshi Nakaki ,  Rikyu Ikariyama

发明人： Toshihiro Ifuku ,  Katsumi Aoki ,  Takanori Matsuda ,  Hiroshi Funakubo ,  Shintaro Yokoyama ,  Yong Kwan Kim ,  Hiroshi Nakaki ,  Rikyu Ikariyama

IPC分类号： H01L41/187

CPC分类号： B41J2/14233 ,  B41J2/161 ,  B41J2/1623 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1632 ,  B41J2/1634 ,  B41J2/1642 ,  B41J2/1645 ,  B41J2/1646 ,  B41J2202/03 ,  H01L41/0805 ,  H01L41/1875 ,  H01L41/1876 ,  H01L41/316

摘要： Provided are a piezoelectric film, a piezoelectric film element, a liquid discharge head using the piezoelectric film element, and a liquid discharge apparatus. A piezoelectric film element that can be suitably used for a discharge pressure-generating element of a liquid discharge head is obtained by using an epitaxial oxide film composed of a perovskite composite oxide constituted according to a general formula ABO3 as a piezoelectric film. The epitaxial oxide film has at least an A domain and a B domain having a crystal orientation deviation with respect to each other. The crystal orientation deviation between the A domain and the B domain is less than 2°.

摘要翻译： 提供一种压电膜，压电膜元件，使用该压电膜元件的液体排出头和液体排出装置。 通过使用由根据通式ABO3构成的钙钛矿复合氧化物构成的外延氧化膜作为压电膜，可以适用于液体排出头的排出压力产生元件的压电膜元件。 外延氧化膜具有至少A畴和具有相对于晶体取向偏离的B畴。 A域与B域之间的晶体取向偏差小于2°。

公开(公告)号：US20080012054A1

公开(公告)日：2008-01-17

申请号：US11677267

申请日：2007-02-21

申请人： Toshihiro IFUKU ,  Katsumi Aoki ,  Takanori Matsuda ,  Hiroshi Funakubo ,  Shintaro Yokoyama ,  Yong Kim ,  Hiroshi Nakaki ,  Rikyu Ikariyama

发明人： Toshihiro IFUKU ,  Katsumi Aoki ,  Takanori Matsuda ,  Hiroshi Funakubo ,  Shintaro Yokoyama ,  Yong Kim ,  Hiroshi Nakaki ,  Rikyu Ikariyama

IPC分类号： H01L29/76 ,  H01L29/94

CPC分类号： B41J2/14233 ,  B41J2/161 ,  B41J2/1623 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1632 ,  B41J2/1634 ,  B41J2/1642 ,  B41J2/1645 ,  B41J2/1646 ,  B41J2202/03 ,  H01L41/0805 ,  H01L41/1875 ,  H01L41/1876 ,  H01L41/316

摘要： Provided are a piezoelectric film, a piezoelectric film element, a liquid discharge head using the piezoelectric film element, and a liquid discharge apparatus. A piezoelectric film element that can be suitably used for a discharge pressure-generating element of a liquid discharge head is obtained by using an epitaxial oxide film composed of a perovskite composite oxide constituted according to a general formula ABO3 as a piezoelectric film. The epitaxial oxide film has at least an A domain and a B domain having a crystal orientation deviation with respect to each other. The crystal orientation deviation between the A domain and the B domain is less than 2°.

摘要翻译： 提供一种压电膜，压电膜元件，使用该压电膜元件的液体排出头和液体排出装置。 通过使用由根据通式ABO 3构成的钙钛矿复合氧化物构成的外延氧化膜，可以适用于液体排出头的排出压力产生元件的压电膜元件， 作为压电膜。 外延氧化膜具有至少A畴和具有相对于晶体取向偏离的B畴。 A域与B域之间的晶体取向偏差小于2°。

公开(公告)号：US08142678B2

公开(公告)日：2012-03-27

申请号：US11499722

申请日：2006-08-07

申请人： Takanori Matsuda ,  Katsumi Aoki ,  Toshihiro Ifuku ,  Kenichi Takeda ,  Tetsuro Fukui ,  Hiroshi Funakubo ,  Shintaro Yokoyama

发明人： Takanori Matsuda ,  Katsumi Aoki ,  Toshihiro Ifuku ,  Kenichi Takeda ,  Tetsuro Fukui ,  Hiroshi Funakubo ,  Shintaro Yokoyama

IPC分类号： C04B35/00

CPC分类号： C04B35/499 ,  C04B35/472 ,  C04B2235/3206 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3224 ,  C04B2235/3227 ,  C04B2235/3234 ,  C04B2235/3251 ,  C04B2235/3258 ,  C04B2235/3272 ,  C04B2235/3275 ,  C04B2235/3279 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3293 ,  C04B2235/3294 ,  C04B2235/3298 ,  C04B2235/76 ,  C04B2235/762 ,  C04B2235/765 ,  C04B2235/768 ,  C04B2235/787 ,  C04B2235/79 ,  H01L41/0973 ,  H01L41/1875 ,  H01L41/316

摘要： A perovskite type oxide of a single crystal structure or a uniaxial-oriented crystal structure is represented by ABO3. Site A includes Pb as a main component and site B includes a plurality of elements. The perovskite type oxide includes a plurality of crystal phases selected from the group consisting of tetragonal, rhombohedral, orthorhombic, cubic, pseudo-cubic and monoclinic systems and the plurality of crystal phases are oriented in the direction of .

摘要翻译： 由ABO3表示单晶结构或单轴取向晶体结构的钙钛矿型氧化物。 场地A包括Pb作为主要成分，场地B包括多个元素。 钙钛矿型氧化物包括选自四方晶系，菱方晶，斜方晶，立方晶，假立方晶系和单斜晶系的多个结晶相，多个结晶相朝<100>方向取向。

公开(公告)号：US20070215715A1

公开(公告)日：2007-09-20

申请号：US11683100

申请日：2007-03-07

申请人： Tetsuro Fukui ,  Kenichi Takeda ,  Katsumi Aoki ,  Toshihiro Ifuku ,  Takanori Matsuda ,  Hiroshi Funakubo ,  Shintaro Yokoyama ,  Takashi Katoda ,  Ken Nishida

发明人： Tetsuro Fukui ,  Kenichi Takeda ,  Katsumi Aoki ,  Toshihiro Ifuku ,  Takanori Matsuda ,  Hiroshi Funakubo ,  Shintaro Yokoyama ,  Takashi Katoda ,  Ken Nishida

IPC分类号： B05B1/08

CPC分类号： B41J2/14233 ,  B41J2202/03 ,  H01L41/1876

摘要： The invention is to provide an optical element satisfactory in transparency and characteristics as an optical modulation element, and a piezoelectric substance element satisfactory in precision and reproducibility as a fine element such as MEMS. The piezoelectric substance element includes, on a substrate, at least a first electrode, a piezoelectric substance film and a second electrode; wherein the piezoelectric substance film does not contain a layer-structured boundary plane; the crystal phase constituting the piezoelectric substance film comprises at least two of a tetragonal, a rhombohedral, a pseudocubic, an orthorhombic and a monoclinic; and the piezoelectric substance film includes, in a portion in which a change in the composition is within a range of ±2%, a portion where a proportion of the different crystal phases changes gradually in a thickness direction of the film.

摘要翻译： 本发明提供一种作为光调制元件的透明性和特性令人满意的光学元件，以及作为微细元件如MEMS的精度和再现性良好的压电体元件。 压电体元件在基板上至少包括第一电极，压电体膜和第二电极; 其中所述压电物质膜不包含层结构的边界面; 构成压电体膜的晶相包含四方晶，菱方，假立方，斜方晶和单斜晶中的至少两种; 并且压电体膜在组成的变化范围为±2％的范围内包括不同结晶相的比例在膜的厚度方向上逐渐变化的部分。

公开(公告)号：US07759845B2

公开(公告)日：2010-07-20

申请号：US11683100

申请日：2007-03-07

申请人： Tetsuro Fukui ,  Kenichi Takeda ,  Katsumi Aoki ,  Toshihiro Ifuku ,  Takanori Matsuda ,  Hiroshi Funakubo ,  Shintaro Yokoyama ,  Takashi Katoda ,  Ken Nishida

发明人： Tetsuro Fukui ,  Kenichi Takeda ,  Katsumi Aoki ,  Toshihiro Ifuku ,  Takanori Matsuda ,  Hiroshi Funakubo ,  Shintaro Yokoyama ,  Takashi Katoda ,  Ken Nishida

IPC分类号： H01L41/08

CPC分类号： B41J2/14233 ,  B41J2202/03 ,  H01L41/1876

摘要： An optical element satisfactory in transparency and characteristics as an optical modulation element, and a piezoelectric substance element satisfactory in precision and reproducibility as a fine element such as MEMS can be provided. The piezoelectric substance element includes, on a substrate, at least a first electrode, a piezoelectric substance film and a second electrode. The piezoelectric substance film does not contain a layer-structured boundary plane; the crystal phase constituting the piezoelectric substance film comprises at least two of a tetragonal, a rhombohedral, a pseudocubic, an orthorhombic and a monoclinic; and the piezoelectric substance film includes, in a portion in which a change in the composition is within a range of ±2%, a portion where a proportion of the different crystal phases changes gradually in a thickness direction of the film.

摘要翻译： 可以提供作为光调制元件的透明度和特性令人满意的光学元件，以及作为微细元件如MEMS的精度和再现性良好的压电体元件。 压电体元件在基板上至少包括第一电极，压电体膜和第二电极。 压电体膜不含有层结构的边界面; 构成压电体膜的晶相包含四方晶，菱方，假立方，斜方晶和单斜晶中的至少两种; 并且压电体膜在组成的变化范围为±2％的范围内包括不同结晶相的比例在膜的厚度方向上逐渐变化的部分。

公开(公告)号：US20070060467A1

公开(公告)日：2007-03-15

申请号：US11499722

申请日：2006-08-07

申请人： Takanori Matsuda ,  Katsumi Aoki ,  Toshihiro Ifuku ,  Kenichi Takeda ,  Tetsuro Fukui ,  Hiroshi Funakubo ,  Shintaro Yokoyama

发明人： Takanori Matsuda ,  Katsumi Aoki ,  Toshihiro Ifuku ,  Kenichi Takeda ,  Tetsuro Fukui ,  Hiroshi Funakubo ,  Shintaro Yokoyama

IPC分类号： C04B35/495 ,  C04B35/00

CPC分类号： C04B35/499 ,  C04B35/472 ,  C04B2235/3206 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3224 ,  C04B2235/3227 ,  C04B2235/3234 ,  C04B2235/3251 ,  C04B2235/3258 ,  C04B2235/3272 ,  C04B2235/3275 ,  C04B2235/3279 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3293 ,  C04B2235/3294 ,  C04B2235/3298 ,  C04B2235/76 ,  C04B2235/762 ,  C04B2235/765 ,  C04B2235/768 ,  C04B2235/787 ,  C04B2235/79 ,  H01L41/0973 ,  H01L41/1875 ,  H01L41/316

摘要： A perovskite type oxide of a single crystal structure or a uniaxial-oriented crystal structure represented by ABO3 where site A includes Pb as a main component and site B includes a plurality of elements, wherein the perovskite type oxide includes a plurality of crystal phases selected from the group consisting of tetragonal, rhombohedral, orthorhombic, cubic, pseudo-cubic and monoclinic systems and the plurality of crystal phases are oriented in the direction of .

摘要翻译： 由ABO 3 3代表的单晶结构的钙钛矿型氧化物或单轴取向晶体结构，其中位置A包括Pb作为主要组分，并且位置B包括多个元素，其中钙钛矿型氧化物 包括选自正方晶，菱方，正交，立方，假立方和单斜晶系的多个晶相，并且多个晶相沿<100>的方向取向。

公开(公告)号：US07857431B2

公开(公告)日：2010-12-28

申请号：US11813943

申请日：2006-01-18

申请人： Tetsuro Fukui ,  Kenichi Takeda ,  Toshihiro Ifuku ,  Hiroshi Funakubo ,  Shintaro Yokoyama ,  Yong Kwan Kim ,  Hiroshi Nakaki ,  Risako Ueno ,  Shoji Okamoto

发明人： Tetsuro Fukui ,  Kenichi Takeda ,  Toshihiro Ifuku ,  Hiroshi Funakubo ,  Shintaro Yokoyama ,  Yong Kwan Kim ,  Hiroshi Nakaki ,  Risako Ueno ,  Shoji Okamoto

IPC分类号： B41J2/045

CPC分类号： B41J2/161 ,  B41J2/1642 ,  B41J2/1646 ,  H01L41/0478 ,  H01L41/0815 ,  H01L41/0973 ,  H01L41/1876 ,  H01L41/313 ,  H01L41/316 ,  H01L41/319

摘要： A piezoelectric substance element has a piezoelectric substance film and a pair of electrodes connected to the piezoelectric substance film on a substrate, and a main component of the piezoelectric substance film is Pb(Zr, Ti)O3, a composition ratio of Zr/(Zr+Ti) is over 0.4 but less than 0.7, the piezoelectric substance film is a film having at last a tetragonal crystal a-domain and a c-domain within a range of ±10° with respect to the surface of the substrate, and a volume rate of the c-domain to the total of the a-domain and the c-domain is equal to or larger than 20% and equal to or smaller than 60%.

摘要翻译： 压电体元件在基板上具有与压电体膜连接的压电体膜和一对电极，压电体膜的主要成分为Pb（Zr，Ti）O 3，Zr /（Zr + Ti）超过0.4但小于0.7时，压电体膜是至少具有相对于基板的表面±10°的四方晶系a畴和c域的膜， c域的体积率相对于a域和c域的总和等于或大于20％且等于或小于60％。