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公开(公告)号：US20080240507A1
公开(公告)日：2008-10-02
申请号：US12076863
申请日：2008-03-25
IPC分类号： G06K9/00
CPC分类号： G06F3/017 , G06K9/00355
摘要： An information device operation apparatus includes an image capturing device, an illumination device, a controller, image storage device, operation object extracting device, detection device, and signal output device. The image storage device stores a plurality of images that are acquired by the image capturing device under a plurality of illumination intensity conditions. The operation object extracting device extracts the operation object by comparing the plurality of images. The detection device detects at least one of a predetermined shape and a movement of the operation object that is extracted by the operation object extracting device. The signal output device outputs a signal to the target device, the signal corresponding to the at least one of the predetermined shape and the movement of the operation object detected by the detection device.
摘要翻译： 信息装置操作装置包括图像捕获装置，照明装置，控制器，图像存储装置，操作对象提取装置，检测装置和信号输出装置。 图像存储装置在多个照明强度条件下存储由图像拍摄装置获取的多个图像。 操作对象提取装置通过比较多个图像来提取操作对象。 检测装置检测由操作对象提取装置提取的操作对象的预定形状和移动中的至少一个。 所述信号输出装置向所述目标装置输出信号，所述信号对应于所述预定形状中的至少一个和由所述检测装置检测到的所述操作对象的移动。
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公开(公告)号：US20080153216A1
公开(公告)日：2008-06-26
申请号：US12071186
申请日：2008-02-19
申请人： Rajesh Kumar , Tsuyoshi Yamamoto , Hiroki Nakamura , Toshiyuki Morishita , Takasumi Ohyanagi , Atsuo Watanabe
发明人： Rajesh Kumar , Tsuyoshi Yamamoto , Hiroki Nakamura , Toshiyuki Morishita , Takasumi Ohyanagi , Atsuo Watanabe
IPC分类号： H01L21/82
CPC分类号： H01L29/1608 , H01L27/098 , H01L29/0619 , H01L29/66068 , H01L29/8083
摘要： A manufacturing method of a silicon carbide semiconductor device includes the steps of: preparing a semiconductor substrate including a silicon carbide substrate, a drift layer and a first semiconductor layer; forming a plurality of first trenches in a cell portion; forming a gate layer on an inner wall of each first trench by an epitaxial growth method; forming a first insulation film on the surface of the semiconductor substrate; forming a gate electrode on the first insulation film for connecting to the gate layer electrically; forming a source electrode on the first insulation film for connecting to the first semiconductor layer in the cell portion; and forming a drain electrode connected to the silicon carbide substrate electrically.
摘要翻译： 碳化硅半导体器件的制造方法包括以下步骤：制备包括碳化硅衬底，漂移层和第一半导体层的半导体衬底; 在单元部分中形成多个第一沟槽; 通过外延生长法在每个第一沟槽的内壁上形成栅极层; 在所述半导体衬底的表面上形成第一绝缘膜; 在所述第一绝缘膜上形成用于电连接到所述栅极层的栅电极; 在所述第一绝缘膜上形成用于连接到所述单元部分中的所述第一半导体层的源电极; 以及电连接到所述碳化硅衬底的漏电极。
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公开(公告)号：US20070241338A1
公开(公告)日：2007-10-18
申请号：US11783611
申请日：2007-04-10
申请人： Tsuyoshi Yamamoto , Toshio Sakakibara , Hiroki Nakamura , Toshiyuki Morishita , Takasumi Ooyanagi , Atsuo Watanabe
发明人： Tsuyoshi Yamamoto , Toshio Sakakibara , Hiroki Nakamura , Toshiyuki Morishita , Takasumi Ooyanagi , Atsuo Watanabe
IPC分类号： H01L31/0312
CPC分类号： H01L29/1608 , H01L29/0843 , H01L29/1066 , H01L29/8083 , H01L29/872
摘要： A SiC semiconductor device includes: a SiC substrate having a drain layer, a drift layer and a source layer stacked in this order; multiple trenches penetrating the source layer and reaching the drift layer; a gate layer on a sidewall of each trench; an insulation film on the sidewall of each trench covering the gate layer; a source electrode on the source layer; and a diode portion in or under the trench contacting the drift layer to provide a diode. The drift layer between the gate layer on the sidewalls of adjacent two trenches provides a channel region. The diode portion is coupled with the source electrode, and insulated from the gate layer with the insulation film.
摘要翻译： SiC半导体器件包括：具有漏极层，漂移层和源极层的SiC衬底; 多个沟槽穿透源层并到达漂移层; 每个沟槽的侧壁上的栅极层; 覆盖所述栅极层的每个沟槽的侧壁上的绝缘膜; 源极上的源电极; 以及与沟槽接触的沟槽中或下方的二极管部分，以提供二极管。 相邻两个沟槽的侧壁上的栅极层之间的漂移层提供沟道区域。 二极管部分与源电极耦合，并与绝缘膜与栅极层绝缘。
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公开(公告)号：US20070221924A1
公开(公告)日：2007-09-27
申请号：US11802810
申请日：2007-05-25
IPC分类号： H01L29/772
CPC分类号： H01L29/66416 , H01L29/1608 , H01L29/7722 , H01L29/8083
摘要： A silicon carbide semiconductor device such as JFET, SIT and the like is provided for accomplishing a reduction in on-resistance and high-speed switching operations. In the JFET or SIT which turns on/off a current with a depletion layer extending in a channel between a gate region formed along trench grooves, a gate contact layer and a gate electrode, which can be supplied with voltages from the outside, are formed on one surface of a semiconductor substrate or on the bottom of the trench groove. A metal conductor (virtual gate electrode) is formed in ohmic contact with a p++ contact layer of the gate region on the bottom of the trench grooves independently of the gate electrode. The virtual gate electrode is electrically isolated from the gate electrode and an external wire.
摘要翻译： 提供诸如JFET，SIT等的碳化硅半导体器件用于实现导通电阻和高速开关操作的降低。 在JFET或SIT中，形成在沿着沟槽形成的栅极区之间的沟道中延伸的耗尽层的电流，可以从外部供应电压的栅极接触层和栅极电极 在半导体衬底的一个表面上或在沟槽槽的底部。 金属导体（虚拟栅电极）与沟槽沟槽底部的栅极区域的p ++接触层独立于栅电极形成欧姆接触。 虚拟栅电极与栅极电极和外部电线电隔离。
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公开(公告)号：US07073331B2
公开(公告)日：2006-07-11
申请号：US11132669
申请日：2005-05-19
IPC分类号： F01B1/00
CPC分类号： F01K27/005
摘要： In a steam engine having a heating device, a cooling device, and an output device, the output device comprises a piston reciprocally moving by a self-excited fluid vibration of a working fluid in a fluid container. The piston is reciprocally moved by the output device for a certain period before starting an operation of the steam engine, so that the working fluid is moved to an inside space of the heating device. Since the working fluid is surely heated and vaporized by the heating device, the fluid vibration is stably started, and as a result, the operation of the steam engine can be smoothly started.
摘要翻译： 在具有加热装置，冷却装置和输出装置的蒸汽机中，输出装置包括通过流体容器中的工作流体的自激流体振动往复运动的活塞。 在开始蒸汽发动机的运转之前，活塞由输出装置往复移动一定时间，使得工作流体移动到加热装置的内部空间。 由于工作流体被加热装置确实地加热和蒸发，因此能够稳定地开始流体振动，结果能够平稳地开始蒸汽发动机的运转。
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公开(公告)号：US20060060884A1
公开(公告)日：2006-03-23
申请号：US11138298
申请日：2005-05-27
IPC分类号： H01L29/74
CPC分类号： H01L29/66416 , H01L29/1608 , H01L29/7722 , H01L29/8083
摘要： A silicon carbide semiconductor device such as JFET, SIT and the like is provided for accomplishing a reduction in on-resistance and high-speed switching operations. In the JFET or SIT which turns on/off a current with a depletion layer extending in a channel between a gate region formed along trench grooves, a gate contact layer and a gate electrode, which can be supplied with voltages from the outside, are formed on one surface of a semiconductor substrate or on the bottom of the trench groove. A metal conductor (virtual gate electrode) is formed in ohmic contact with a p++ contact layer of the gate region on the bottom of the trench grooves independently of the gate electrode. The virtual gate electrode is electrically isolated from the gate electrode and an external wire.
摘要翻译： 提供诸如JFET，SIT等的碳化硅半导体器件用于实现导通电阻和高速开关操作的降低。 在JFET或SIT中，形成在沿着沟槽形成的栅极区之间的沟道中延伸的耗尽层的电流，可以从外部供应电压的栅极接触层和栅极电极 在半导体衬底的一个表面上或在沟槽槽的底部。 金属导体（虚拟栅电极）与沟槽沟槽底部的栅极区域的p ++接触层独立于栅电极形成欧姆接触。 虚拟栅电极与栅极电极和外部电线电隔离。
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公开(公告)号：US20050257526A1
公开(公告)日：2005-11-24
申请号：US11132669
申请日：2005-05-19
CPC分类号： F01K27/005
摘要： In a steam engine having a heating device, a cooling device, and an output device, the output device comprises a piston reciprocally moving by a self-excited fluid vibration of a working fluid in a fluid container. The piston is reciprocally moved by the output device for a certain period before starting an operation of the steam engine, so that the working fluid is moved to an inside space of the heating device. Since the working fluid is surely heated and vaporized by the heating device, the fluid vibration is stably started, and as a result, the operation of the steam engine can be smoothly started.
摘要翻译： 在具有加热装置，冷却装置和输出装置的蒸汽发动机中，输出装置包括通过流体容器中的工作流体的自激流体振动往复运动的活塞。 在开始蒸汽发动机的运转之前，活塞由输出装置往复移动一定时间，使得工作流体移动到加热装置的内部空间。 由于工作流体被加热装置确实地加热和蒸发，因此能够稳定地开始流体振动，结果能够平稳地开始蒸汽发动机的运转。
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公开(公告)号：US06630389B2
公开(公告)日：2003-10-07
申请号：US10059030
申请日：2002-01-30
IPC分类号： H01L2176
CPC分类号： H01L21/3247 , H01L21/28167 , H01L21/324 , H01L29/4236 , H01L29/66348 , H01L29/7813
摘要： In a trench-gate type power MOSFET in which a gate electrode is formed on a gate oxide layer formed on a surface of a wall defining a trench, the trench is annealed by heating, for example, at the temperature between 1050° C. and 1150° C. in a hydrogen atmosphere before the gate oxide layer is formed. The crystal defects generated in a crystal adjacent to the trench are cured by the hydrogen annealing without enlarging the trench horizontal width, so that a trench having a high aspect ratio is provided while leak current at a PN junction is prevented. In addition, the breakdown voltage of the gate oxide layer is prevented from being lowered.
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公开(公告)号：US5777365A
公开(公告)日：1998-07-07
申请号：US721626
申请日：1996-09-26
IPC分类号： H01L21/336 , H01L21/76 , H01L21/762 , H01L27/12 , H01L29/10 , H01L29/78 , H01L29/786 , H01L27/02
CPC分类号： H01L29/7824 , H01L21/76264 , H01L29/66681 , H01L21/76275 , H01L21/76286 , H01L29/78603
摘要： A semiconductor device of SOI structure exhibits a excellent heat-radiating characteristic while assuring breakdown-voltage and element-isolating performance. A buried silicon oxide film having a thickness required by the breakdown-voltage of a semiconductor element is buried between a SOI layer and a silicon substrate. A SOI layer is divided into island silicon regions by a groove for electrical-isolation use, and the groove is filled with dielectric such as an oxide film and polycrystalline silicon. In an island silicon region, a LDMOS transistor having high breakdown voltage may be formed as the semiconductor element, and potential distribution is created in accordance with a voltage application to the semiconductor element. The buried silicon oxide film at a region where low electric potential is distributed, for example a region below a grounded well region of the LDMOS transistor, is made thin. Through the thin portion of the buried silicon oxide film, heat generated by the operation of the semiconductor element can easily be propagated to the silicon substrate and radiated.
摘要翻译： SOI结构的半导体器件在确保击穿电压和元件隔离性能的同时表现出优异的散热特性。 具有半导体元件的击穿电压所需的厚度的掩埋氧化硅膜被掩埋在SOI层和硅衬底之间。 SOI层通过用于电绝缘的沟槽被划分为岛状硅区域，并且沟槽填充有诸如氧化物膜和多晶硅的电介质。 在岛状硅区域中，可以形成具有高击穿电压的LDMOS晶体管作为半导体元件，并且根据对半导体元件的施加电压产生电位分布。 在低电位分布的区域（例如LDMOS晶体管的接地阱区域下方的区域）中的掩埋氧化硅膜变薄。 通过掩埋氧化硅膜的薄壁部分，可以容易地将由半导体元件的工作产生的热量传播到硅衬底并辐射。
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公开(公告)号：US07855384B2
公开(公告)日：2010-12-21
申请号：US11783611
申请日：2007-04-10
申请人： Tsuyoshi Yamamoto , Toshio Sakakibara , Hiroki Nakamura , Toshiyuki Morishita , Takasumi Ooyanagi , Atsuo Watanabe
发明人： Tsuyoshi Yamamoto , Toshio Sakakibara , Hiroki Nakamura , Toshiyuki Morishita , Takasumi Ooyanagi , Atsuo Watanabe
CPC分类号： H01L29/1608 , H01L29/0843 , H01L29/1066 , H01L29/8083 , H01L29/872
摘要： A SiC semiconductor device includes: a SiC substrate having a drain layer, a drift layer and a source layer stacked in this order; multiple trenches penetrating the source layer and reaching the drift layer; a gate layer on a sidewall of each trench; an insulation film on the sidewall of each trench covering the gate layer; a source electrode on the source layer; and a diode portion in or under the trench contacting the drift layer to provide a diode. The drift layer between the gate layer on the sidewalls of adjacent two trenches provides a channel region. The diode portion is coupled with the source electrode, and insulated from the gate layer with the insulation film.
摘要翻译： SiC半导体器件包括：具有漏极层，漂移层和源极层的SiC衬底; 多个沟槽穿透源层并到达漂移层; 每个沟槽的侧壁上的栅极层; 覆盖所述栅极层的每个沟槽的侧壁上的绝缘膜; 源极上的源电极; 以及与沟槽接触的沟槽中或下方的二极管部分，以提供二极管。 相邻两个沟槽的侧壁上的栅极层之间的漂移层提供沟道区域。 二极管部分与源电极耦合，并与绝缘膜与栅极层绝缘。
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