公开(公告)号：US20080127508A1

公开(公告)日：2008-06-05

申请号：US11984100

申请日：2007-11-13

申请人： Hiroki Ohno ,  Kenji Sekiguchi

发明人： Hiroki Ohno ,  Kenji Sekiguchi

IPC分类号： F26B19/00 ,  F26B21/10 ,  F26B25/08

CPC分类号： H01L21/02057 ,  H01L21/02052 ,  H01L21/67023 ,  H01L21/67051

摘要： A substrate processing apparatus includes a chamber, and a cleaning-liquid supply unit that supplies a cleaning liquid containing hydrofluoro ether onto a substrate to be processed placed in the chamber. In the chamber, there is further disposed a gas supply unit that supplies into the chamber a gas for preventing moisture from being adhered to a substrate to be processed, when a cleaning liquid containing hydrofluoro ether is supplied onto the substrate to be processed.

摘要翻译： 基板处理装置包括：室，以及清洗液供给单元，其将含有氢氟醚的清洗液供给到被处理的基板上。 在室内还设置有一个气体供给单元，当含有氢氟醚的清洗液体被供给到待处理的基板上时，该气体供给单元将用于防止湿气附着在被处理基板上的气体供给到室内。

公开(公告)号：US08147617B2

公开(公告)日：2012-04-03

申请号：US11628308

申请日：2005-06-01

申请人： Kenji Sekiguchi ,  Hiroki Ohno

发明人： Kenji Sekiguchi ,  Hiroki Ohno

IPC分类号： B08B7/00 ,  B08B7/04

CPC分类号： H01L21/02052 ,  B08B3/02 ,  B08B2203/0288 ,  H01L21/67051 ,  Y10S134/902

摘要： A wafer W is processed by supplying a two-fluid, high pressure jet water, or mega-sonic water onto the wafer W, while rotating the wafer W in an essentially horizontal state. After supply of the cleaning fluid is stopped, the wafer W is dried by rotating the wafer W at a higher speed than that used in supplying the cleaning fluid. No rinsing process using purified water is performed in a period after stopping supply of the cleaning fluid and before rotating the substrate at the higher speed.

摘要翻译： 在基本上水平状态下旋转晶片W的同时，通过向晶片W上供应双流体高压喷射水或大体积的水来处理晶片W. 在停止供给清洗液之后，通过以比供给清洗液所用的速度高的速度旋转晶片W来干燥晶片W. 在停止供给清洗液之后的时间内，在高速旋转基板之前，不进行使用净化水的漂洗处理。

公开(公告)号：US08197606B2

公开(公告)日：2012-06-12

申请号：US12707098

申请日：2010-02-17

申请人： Tsukasa Watanabe ,  Naoki Shindo ,  Hiroki Ohno ,  Kenji Sekiguchi

发明人： Tsukasa Watanabe ,  Naoki Shindo ,  Hiroki Ohno ,  Kenji Sekiguchi

IPC分类号： B08B7/02

CPC分类号： H01L21/67051 ,  B24C7/0046 ,  H01L21/02057 ,  Y10S134/902

摘要： Disclosed is a substrate cleaning method for prevent damage to a pattern formed on a substrate. The substrate cleaning method includes cleaning the substrate by striking cleaning particulates carried in a flow of dry air or inert gas against a surface of the substrate, and removing the cleaning particulates.

摘要翻译： 公开了一种用于防止对在基板上形成的图案的损坏的基板清洗方法。 基板清洗方法包括通过将干燥空气或惰性气体中携带的清洁微粒冲击到基板的表面上并清除清洁颗粒来清洁基板。

公开(公告)号：US07837804B2

公开(公告)日：2010-11-23

申请号：US10594549

申请日：2005-04-19

申请人： Hiroki Ohno ,  Kenji Sekiguchi

发明人： Hiroki Ohno ,  Kenji Sekiguchi

IPC分类号： B08B7/04

CPC分类号： H01L21/67051 ,  B08B3/02 ,  G02F2001/1316 ,  H01L21/67028 ,  Y10S134/902

摘要： In a dry process after a cleaning process using a cleaning-liquid nozzle and a rinse process using a side rinse nozzle are performed on a wafer W, the wafer W is turned, feeding of pure water to a center point of the wafer W from a pure-water nozzle is started, and substantially at the same, injection of a nitrogen gas from a gas nozzle to a center portion of the wafer W at a point at an adequate distance apart from the center of the wafer W is started. Next, while the pure-water nozzle is caused to scan toward the periphery of the wafer W, the gas nozzle is caused to scan toward the periphery of the wafer W in an area radially inward of the position of the pure-water nozzle after the gas nozzle passes the center of the wafer W.

摘要翻译： 在使用清洗液喷嘴的清洗处理和使用侧面冲洗喷嘴的冲洗处理之后的干燥处理中，在晶片W上进行晶片W的转动，将纯水从晶片W的中心点向 开始纯水喷嘴，并且基本上同样地，开始从距离晶片W的中心足够距离的点将气体从气体喷嘴喷射到晶片W的中心部分。 接下来，当使纯水喷嘴朝向晶片W的周边扫描时，使气体喷嘴在纯水喷嘴的位置的径向向内的区域中朝向晶片W的周边扫描 气体喷嘴通过晶片W的中心。

公开(公告)号：US20080251101A1

公开(公告)日：2008-10-16

申请号：US10594549

申请日：2005-04-19

申请人： Hiroki Ohno ,  Kenji Sekiguchi

发明人： Hiroki Ohno ,  Kenji Sekiguchi

IPC分类号： B08B5/00 ,  B08B3/04 ,  B08B13/00

CPC分类号： H01L21/67051 ,  B08B3/02 ,  G02F2001/1316 ,  H01L21/67028 ,  Y10S134/902

摘要： In a dry process after a cleaning process using a cleaning-liquid nozzle and a rinse process using a side rinse nozzle are performed on a wafer W, the wafer W is turned, feeding of pure water to a center point of the wafer W from a pure-water nozzle is started, and substantially at the same, injection of a nitrogen gas from a gas nozzle to a center portion of the wafer W at a point at an adequate distance apart from the center of the wafer W is started. Next, while the pure-water nozzle is caused to scan toward the periphery of the wafer W, the gas nozzle is caused to scan toward the periphery of the wafer W in an area radially inward of the position of the pure-water nozzle after the gas nozzle passes the center of the wafer W.

摘要翻译： 在使用清洗液喷嘴的清洗处理和使用侧面冲洗喷嘴的冲洗处理之后的干燥处理中，在晶片W上进行晶片W的转动，将纯水从晶片W的中心点向 开始纯水喷嘴，并且基本上同样地，开始从距离晶片W的中心足够距离的点将气体从气体喷嘴喷射到晶片W的中心部分。 接下来，当使纯水喷嘴朝向晶片W的周边扫描时，使气体喷嘴在纯水喷嘴的位置的径向向内的区域中朝向晶片W的周边扫描 气体喷嘴通过晶片W的中心。

公开(公告)号：US20080041420A1

公开(公告)日：2008-02-21

申请号：US11628308

申请日：2005-06-01

申请人： Kenji Sekiguchi ,  Hiroki Ohno

发明人： Kenji Sekiguchi ,  Hiroki Ohno

IPC分类号： H01L21/304 ,  B08B7/04

CPC分类号： H01L21/02052 ,  B08B3/02 ,  B08B2203/0288 ,  H01L21/67051 ,  Y10S134/902

摘要： A wafer W is processed by supplying a two-fluid, high pressure jet water, or mega-sonic water onto the wafer W, while rotating the wafer W in an essentially horizontal state. After supply of the cleaning fluid is stopped, the wafer W is dried by rotating the wafer W at a higher speed than that used in supplying the cleaning fluid. No rinsing process using purified water is performed in a period after stopping supply of the cleaning fluid and before rotating the substrate at the higher speed.

摘要翻译： 在基本上水平状态下旋转晶片W的同时，通过向晶片W上供应双流体高压喷射水或大体积的水来处理晶片W. 在停止供给清洗液之后，通过以比供给清洗液所用的速度高的速度旋转晶片W来干燥晶片W. 在停止供给清洗液之后的时间内，在高速旋转基板之前，不进行使用净化水的漂洗处理。

公开(公告)号：US20070125405A1

公开(公告)日：2007-06-07

申请号：US11606159

申请日：2006-11-30

申请人： Kenji Sekiguchi ,  Hiroki Ohno

发明人： Kenji Sekiguchi ,  Hiroki Ohno

IPC分类号： B08B3/00 ,  B08B7/00

CPC分类号： H01L21/67253 ,  B08B3/02 ,  C03C23/0075 ,  C11D7/261 ,  C11D11/0047 ,  H01L21/02057 ,  H01L21/67051

摘要： A substrate cleaning method, including a step of supplying a two-fluid spray made up of a liquid and a gas to the front surface of a substrate, is provided; wherein the supplying of the two-fluid spray is carried out using a mixture of purified water and isopropyl alcohol as a liquid; concentration of the isopropyl alcohol in the mixture is 10 to 60 wt %; and a particle rejection ratio is 80% or greater.

摘要翻译： 提供了一种基板清洗方法，包括将由液体和气体组成的双流体喷射供给到基板的前表面的步骤; 其中使用纯化水和异丙醇作为液体的混合物进行双液体喷雾的供给; 混合物中异丙醇的浓度为10〜60重量％。 粒子排斥率为80％以上。

公开(公告)号：US06895979B2

公开(公告)日：2005-05-24

申请号：US10359208

申请日：2003-02-06

申请人： Kyouji Kohama ,  Eiji Shimbo ,  Yuji Kamikawa ,  Takayuki Toshima ,  Hiroki Ohno

发明人： Kyouji Kohama ,  Eiji Shimbo ,  Yuji Kamikawa ,  Takayuki Toshima ,  Hiroki Ohno

IPC分类号： H01L21/304 ,  B08B3/02 ,  B08B3/10 ,  H01L21/00

CPC分类号： H01L21/67086 ,  B08B3/02 ,  B08B3/102 ,  H01L21/67051 ,  H01L21/67057 ,  H01L21/6708 ,  Y10S134/902

摘要： A processing apparatus essentially includes a rotatable rotor 21 for carrying semiconductor wafers W, a motor 22 for driving to rotate the rotor 21, a plurality of processing chambers for surrounding the wafers W carried by the rotor 21, for example, an inner chamber 23 and an outer chamber 24, a chemical supplying unit 50, an IPA supplying unit 60, a rinse supplying unit 70 and a drying fluid supplying unit 80. With this constitution of the apparatus, it is possible to prevent the wafers from being contaminated due to the reaction of treatment liquids of different kinds, with the improvement of processing efficiency and miniaturization of the apparatus.

摘要翻译： 一种处理装置主要包括用于承载半导体晶片W的可旋转转子21，用于驱动转子21旋转的电动机22，用于围绕由转子21承载的晶片W的多个处理室，例如内室23和 外部室24，化学品供应单元50，IPA供应单元60，漂洗供应单元70和干燥流体供应单元80.通过该设备的这种结构，可以防止晶片被 不同种类的处理液的反应，提高了加工效率和设备的小型化。

公开(公告)号：US20050026454A1

公开(公告)日：2005-02-03

申请号：US10927102

申请日：2004-08-27

申请人： Nobuo Konishi ,  Mitsuaki Iwashita ,  Hiroki Ohno ,  Shigeru Kawamura ,  Masahito Sugiura

发明人： Nobuo Konishi ,  Mitsuaki Iwashita ,  Hiroki Ohno ,  Shigeru Kawamura ,  Masahito Sugiura

IPC分类号： H01L21/20 ,  H01L21/768 ,  H01L21/4763 ,  H01L21/31 ,  H01L21/469 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/76837 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829

摘要： The present invention comprises the steps of performing a reforming process on a surface of a low dielectric constant insulation film formed on a substrate which includes one of a porous low dielectric constant insulation film and a non-porous low dielectric constant insulation film and forming an insulation film as at least one of an etching mask and a Chemical Mechanical Polishing stopper (CMP stopper) on the reformed surface of the low dielectric constant insulation film. For example, plasma is radiated as a reforming process mentioned above, the surface roughness of a low dielectric insulation film is increased and, as a result, adhesion between the films and also between the inter-layer insulation film and other neighboring films can be improved with so-called “anchor effect”.

摘要翻译： 本发明包括以下步骤：对形成在基板上的低介电常数绝缘膜的表面进行重整工序，该基板包括多孔低介电常数绝缘膜和无孔低介电常数绝缘膜之一，并形成绝缘层 薄膜作为低介电常数绝缘膜的重整表面上的蚀刻掩模和化学机械抛光终止剂（CMP止动器）中的至少一个。 例如，等离子体作为上述重整工序被照射，低介电绝缘膜的表面粗糙度增加，结果，可以改善膜之间以及层间绝缘膜和其它相邻膜之间的粘附性 具有所谓的“锚效应”。

公开(公告)号：US20070017378A1

公开(公告)日：2007-01-25

申请号：US11491567

申请日：2006-07-24

申请人： Hiroyuki Takizawa ,  Shinichi Furuhata ,  Shuhei Kashiwabara ,  Tetsuhiko Shimizu ,  Hiroaki Kaneko ,  Hiroki Ohno ,  Yukio Izumi ,  Hiromi Uchiyama ,  Hiroaki Wanikawa

发明人： Hiroyuki Takizawa ,  Shinichi Furuhata ,  Shuhei Kashiwabara ,  Tetsuhiko Shimizu ,  Hiroaki Kaneko ,  Hiroki Ohno ,  Yukio Izumi ,  Hiromi Uchiyama ,  Hiroaki Wanikawa

IPC分类号： A47J31/44

CPC分类号： A47J31/057 ,  A47J31/46 ,  A47J31/50

摘要： A beverage maker including: a scatter 70 and an ice beverage extraction funnel 50 that are selectively held in a main body unit 10 in a rotatable manner; a hot beverage extraction funnel 76 held in the main body unit 10 in the hot beverage extraction mode for receiving hot water dripped by the scatter 70; a cooling liquid reservoir 52B held in the main body unit 10 in the ice beverage extraction mode for cooling an extract liquid collector unit 52A that receives hot extract liquid from the ice beverage extraction funnel 50 and for cooling the extract liquid; and rotatable stirring members 50A and 50B extending into at least one or other of the extract liquid collector unit 52A and cooling liquid reservoir 52B.

摘要翻译： 一种饮料制造机，包括：分散体70和冰饮料提取漏斗50，其以可旋转的方式选择性地保持在主体单元10中; 以热饮料提取模式保持在主体单元10中的热饮料提取漏斗76，用于接收由散射物70滴落的热水; 在冰饮料提取模式中保持在主体单元10中的冷却液储存器52B，用于冷却从冰饮料提取漏斗50接收热提取液并用于冷却提取液的提取液收集器单元52A; 以及可旋转的搅拌构件50A和50B，其延伸到提取液收集器单元52A和冷却液体储存器52B中的至少一个或另外。