公开(公告)号：US4905471A

公开(公告)日：1990-03-06

申请号：US208602

申请日：1988-06-20

申请人： Mitsuyoshi Mori

发明人： Mitsuyoshi Mori

IPC分类号： F16H41/28

CPC分类号： F16H41/28

摘要： A great number of blades are disposed in a shell inside with appropriate distances left between them in a circumferential direction of a shell. Each blade has an approximately fan-shaped blade body and a flange protruding from an inner peripheral edge in a prescribed direction along a circumference of a shell. An outer peripheral edge of each blade is secured to the shell. The flange of each blade is made contact with a neighboring blade over the entire circumferential length of the blade, and these contacting portions are secured each other in a watertight manner. A core ring is not installed.

摘要翻译： 大量的叶片设置在壳体的内部，并且在壳体的圆周方向上留有适当的距离。 每个叶片具有近似扇形的叶片本体和沿壳体的圆周沿规定方向从内周边缘突出的凸缘。 每个叶片的外围边缘固定在壳体上。 每个叶片的凸缘在叶片的整个圆周长度上与相邻的叶片接触，并且这些接触部分以水密的方式彼此固定。 未安装核心环。

公开(公告)号：US08704321B2

公开(公告)日：2014-04-22

申请号：US13462889

申请日：2012-05-03

申请人： Toru Okino ,  Yoshihisa Kato ,  Yutaka Hirose ,  Mitsuyoshi Mori

发明人： Toru Okino ,  Yoshihisa Kato ,  Yutaka Hirose ,  Mitsuyoshi Mori

IPC分类号： H01L29/51

CPC分类号： H01L27/14625 ,  H01L27/1464 ,  H01L27/14665 ,  H01L27/14685

摘要： Solid-state imaging device of the present invention is a backside-illumination-type solid-state imaging device including wiring layer formed on first surface side of semiconductor substrate; and light receiving section that photoelectrically converts light incident from second surface side that is opposite from first surface side, wherein spontaneous polarization film formed of a material having spontaneous polarization is formed on a light receiving surface of light receiving section. Accordingly, a hole accumulation layer can be formed on the light receiving surface of light receiving section, and a dark current can be suppressed.

摘要翻译： 本发明的固体摄像装置是在半导体基板的第一面侧形成有配线层的背照明型固体摄像元件， 以及光接收从第一表面侧相反的第二表面侧入射的光的光接收部分，其中由具有自发极化的材料形成的自发偏振膜形成在光接收部分的光接收表面上。 因此，能够在受光部的受光面上形成空穴积聚层，能够抑制暗电流。

公开(公告)号：US08243176B2

公开(公告)日：2012-08-14

申请号：US12602747

申请日：2009-06-02

申请人： Yusuke Otake ,  Mitsuyoshi Mori ,  Shinzou Kouyama ,  Toru Okino

发明人： Yusuke Otake ,  Mitsuyoshi Mori ,  Shinzou Kouyama ,  Toru Okino

IPC分类号： H04N3/14 ,  H04N5/335

CPC分类号： H04N9/045 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14647 ,  H04N5/332

摘要： A solid-state image sensor includes: a semiconductor substrate 22; a plurality of pixels 23 arranged on the semiconductor substrate 22 and respectively including photoelectric conversion regions 24; and an isolation region 25 electrically isolating the pixels 23 from one another. The first pixel 31 includes a first photoelectric conversion region 32 and a first color filter 41 having a peak of its optical transmission in a first wavelength range. The second pixel 34 adjacent to the first pixel 31 includes a second photoelectric conversion region 35 and a second color filter 42 having peaks in its optical transmission in the first wavelength range and a second wavelength range including shorter wavelengths than the first wavelength range. A portion 33 of a deep portion of the first photoelectric conversion region 32 extends across the isolation region 25 to reach a portion under the second photoelectric conversion region 35.

摘要翻译： 固态图像传感器包括：半导体衬底22; 配置在半导体基板22上并分别包括光电转换区域24的多个像素23; 以及将像素23彼此电隔离的隔离区域25。 第一像素31包括在第一波长范围内具有其光传输峰值的第一光电转换区域32和第一滤色器41。 与第一像素31相邻的第二像素34包括在其第一波长范围的光传输中具有峰值的第二光电转换区域35和第二滤色器42以及包括比第一波长范围更短的波长的第二波长范围。 第一光电转换区域32的深部的一部分33延伸穿过隔离区域25，到达第二光电转换区域35的下方。

公开(公告)号：US07750366B2

公开(公告)日：2010-07-06

申请号：US12180920

申请日：2008-07-28

申请人： Toru Okino ,  Mitsuyoshi Mori

发明人： Toru Okino ,  Mitsuyoshi Mori

IPC分类号： H01L31/0336 ,  H01L31/109 ,  H01L31/072 ,  H01L31/0328 ,  H01L31/113 ,  H01L31/062 ,  H01L21/324

CPC分类号： H01L27/14603 ,  H01L27/1464 ,  H01L27/14643

摘要： A solid-state imaging element includes a layered substrate made of silicon and composed of, for example, an N-type substrate, a P-type layer, and an N-type layer. In the layered substrate, an imaging region in which a plurality of pixels are arranged and a peripheral circuit region are formed. A recess reaching the reverse face of the P-type layer is formed in a reverse face portion of the layered substrate in the imaging region, and a reflective film is formed on at least the inner face of the recess. Light is reflected on the reverse face and the obverse face of the layered substrate.

摘要翻译： 固态成像元件包括由例如N型衬底，P型层和N型层构成的由硅构成的层状衬底。 在分层基板中，形成有多个像素的成像区域和外围电路区域。 在成像区域中的层叠基板的反面部形成有到达P型层的反面的凹部，在凹部的至少内面形成有反射膜。 光在层叠基板的反面和正面反射。

公开(公告)号：US07696592B2

公开(公告)日：2010-04-13

申请号：US10571426

申请日：2005-06-28

申请人： Mitsuyoshi Mori ,  Daisuke Ueda

发明人： Mitsuyoshi Mori ,  Daisuke Ueda

IPC分类号： H01L31/058

CPC分类号： H01L27/14603 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14689

摘要： A solid state imaging apparatus includes a plurality of photoelectric conversion sections formed in an imaging area of a silicon substrate, and an embedded layer embedded in an isolation trench formed in at least one part of the silicon substrate located around the photoelectric conversion sections. The embedded layer is made of an isolation material having a thermal expansion coefficient larger than silicon oxide and equal to or smaller than silicon.

摘要翻译： 固态成像装置包括形成在硅衬底的成像区域中的多个光电转换部分和嵌入在位于光电转换部分周围的硅衬底的至少一部分中的隔离沟槽中的嵌入层。 嵌入层由具有大于硅的热膨胀系数和等于或小于硅的热膨胀系数的隔离材料制成。

公开(公告)号：US4405337A

公开(公告)日：1983-09-20

申请号：US378814

申请日：1982-05-17

申请人： Mitsuyoshi Mori

发明人： Mitsuyoshi Mori

IPC分类号： C10L1/02 ,  F02B3/06 ,  C10L1/08

CPC分类号： C10L1/026 ,  F02B3/06

摘要： Disclosed is a fuel for a diesel engine which comprises a mixture of (A) an alcohol, (B) gas oil and (C) castor oil, wherein the contents of the respective components satisfy requirements represented by the following formulae:0% by volume

摘要翻译： 公开了一种柴油机的燃料，其包含（A）醇，（B）瓦斯油和（C）蓖麻油的混合物，其中各组分的含量满足下式所示的要求：0体积％ 体积比为80体积％，体积百分比为10体积％，体积比为10体积％，体积比为50体积％。

公开(公告)号：US08592874B2

公开(公告)日：2013-11-26

申请号：US13198240

申请日：2011-08-04

申请人： Mitsuyoshi Mori ,  Toru Okino ,  Yusuke Otake ,  Hitomi Fujiwara

发明人： Mitsuyoshi Mori ,  Kazuo Fujiwara ,  Toru Okino ,  Yusuke Otake

IPC分类号： H01L27/148 ,  H01L29/768

CPC分类号： H01L27/1463 ,  H01L27/14654

摘要： In each of pixels 10 arranged in an array pattern, an insulating isolation part 22 electrically isolates adjacent photoelectric conversion elements 11, and the photoelectric conversion element 11 and an amplifier transistor 14. The insulating isolation part 22 constitutes a first region A between the photoelectric conversion elements 11 where the amplifier transistor 14 is not arranged, and a second region B between the photoelectric conversion elements 11 where the amplifier transistor 14 is arranged. A low concentration first isolation diffusion layer 23 is formed below the insulating isolation part 22 constituting the first region A, and a high concentration second isolation diffusion layer 24 and a low concentration first isolation diffusion layer 23 are formed below the insulating isolation part 22 constituting the second region B. A source/drain region of the amplifier transistor 14 in the second region B is formed in a well region 25 formed simultaneously with the second isolation diffusion layer 24.

摘要翻译： 在排列成阵列图形的像素10的每一个中，绝缘隔离部分22电隔离相邻的光电转换元件11和光电转换元件11和放大器晶体管14.绝缘隔离部分22构成光电转换 未布置放大器晶体管14的元件11和布置放大器晶体管14的光电转换元件11之间的第二区域B. 在构成第一区域A的绝缘隔离部分22的下方形成低浓度第一隔离扩散层23，在绝缘隔离部分22的下方形成高浓度第二隔离扩散层24和低浓度第一隔离扩散层23 第二区域B中的放大器晶体管14的源极/漏极区域形成在与第二隔离扩散层24同时形成的阱区域25中。

公开(公告)号：US20100133592A1

公开(公告)日：2010-06-03

申请号：US12377312

申请日：2008-06-24

申请人： Mitsuyoshi Mori ,  Yasuhiro Shimada ,  Kenji Taniguchi ,  Masayuki Furuhashi

发明人： Mitsuyoshi Mori ,  Yasuhiro Shimada ,  Kenji Taniguchi ,  Masayuki Furuhashi

IPC分类号： H01L31/036

CPC分类号： H01L27/14603 ,  H01L27/1463 ,  H01L31/036

摘要： A plurality of pixel portions (12) are formed on a silicon substrate (11). A photoelectric converter portion (10) constituting each of the pixel portions (12) is electrically isolated by an element isolation portion (13) comprising an insulating film formed on the silicon substrate (11). The photoelectric converter portion (10) partitioned by the element isolation portion (13) is so formed that a crystal orientation of the sides in contact with the element isolation portion (13) corresponds to a direction. This makes it possible to reduce dark current caused by stress in the vicinity of the interface of the element isolation portion (13) and maintain high sensitivity even if the pixel portions (12) are made smaller in size.

摘要翻译： 在硅衬底（11）上形成多个像素部分（12）。 构成每个像素部分（12）的光电转换器部分（10）由形成在硅衬底（11）上的绝缘膜的元件隔离部分（13）电隔离。 由元件隔离部分（13）分隔的光电转换器部分（10）形成为使得与元件隔离部分（13）接触的侧面的晶体取向对应于<00-1>方向。 这使得可以减小由元件隔离部分13的界面附近的应力引起的暗电流，并且即使使像素部分（12）的尺寸更小，也能保持高灵敏度。

公开(公告)号：US20090039387A1

公开(公告)日：2009-02-12

申请号：US12180920

申请日：2008-07-28

申请人： Toru Okino ,  Mitsuyoshi Mori

发明人： Toru Okino ,  Mitsuyoshi Mori

IPC分类号： H01L31/0336 ,  H01L31/18

CPC分类号： H01L27/14603 ,  H01L27/1464 ,  H01L27/14643

摘要： A solid-state imaging element includes a layered substrate made of silicon and composed of, for example, an N-type substrate, a P-type layer, and an N-type layer. In the layered substrate, an imaging region in which a plurality of pixels are arranged and a peripheral circuit region are formed. A recess reaching the reverse face of the P-type layer is formed in a reverse face portion of the layered substrate in the imaging region, and a reflective film is formed on at least the inner face of the recess. Light is reflected on the reverse face and the obverse face of the layered substrate.

摘要翻译： 固态成像元件包括由例如N型衬底，P型层和N型层构成的由硅构成的层状衬底。 在分层基板中，形成有多个像素的成像区域和外围电路区域。 在成像区域中的层叠基板的反面部形成有到达P型层的反面的凹部，在凹部的至少内面形成有反射膜。 光在层叠基板的反面和正面反射。

公开(公告)号：US20060273359A1

公开(公告)日：2006-12-07

申请号：US11436649

申请日：2006-05-19

申请人： Mitsuyoshi Mori

发明人： Mitsuyoshi Mori

IPC分类号： H01L31/113

CPC分类号： H01L27/1463 ,  H01L27/14643 ,  H01L27/14689

摘要： In a solid state imaging device which includes a photodiode in the upper part of a silicon substrate and a MOSFET active region separated from the photodiode by a device isolation region, the width of the device isolation region is smaller in its lower part than in its upper part.

摘要翻译： 在包括硅衬底的上部中的光电二极管和通过器件隔离区与光电二极管分离的MOSFET有源区的固态成像器件中，器件隔离区的宽度在其下部小于其上部 部分。