公开(公告)号：US5194648A

公开(公告)日：1993-03-16

申请号：US562321

申请日：1990-08-03

申请人： Shinichi Satoh ,  Noriyuki Koike ,  Hideki Fujii

发明人： Shinichi Satoh ,  Noriyuki Koike ,  Hideki Fujii

IPC分类号： C07C51/04 ,  C07C51/58 ,  C07C59/60 ,  C07F7/18 ,  C08G65/22 ,  C08G65/32

CPC分类号： C07F7/1828 ,  C07C59/60 ,  C07F7/182 ,  C07F7/1896

摘要： Novel fluorinated carboxylic acid derivatives of the general formula: ##STR1## wherein Rf is a divalent perfluoroalkyl or perfluoropolyether group and Z is halogen, hydroxyl or triorganosiloxy are useful intermediate for the synthesis of various fluorinated compounds. Compounds [I-i] wherein Z in formula [I] is F are prepared by reacting acid fluoride-terminated compounds of the formula: ##STR2## with an alkali fluoride and further with an allyl halide. Compounds [I-ii] wherein Z in formula [I] is a halogen are preparred by reacting compounds [I-i] with lithium halide. Compounds [I-iii] wherein Z in formula [I] is OH are prepared through hydrolysis of compounds [I-ii]. Compounds [I-iv] wherein Z in formula [I] is triorganosiloxy are prepared by reacting compounds [I-iii] with a triorganosilylating agent.

公开(公告)号：US5180683A

公开(公告)日：1993-01-19

申请号：US727781

申请日：1991-07-10

申请人： Wataru Wakamiya ,  Yoshinori Tanaka ,  Takahisa Eimori ,  Hiroji Ozaki ,  Hiroshi Kimura ,  Shinichi Satoh

发明人： Wataru Wakamiya ,  Yoshinori Tanaka ,  Takahisa Eimori ,  Hiroji Ozaki ,  Hiroshi Kimura ,  Shinichi Satoh

IPC分类号： H01L27/108

CPC分类号： H01L27/10817

摘要： A semiconductor memory device according to the present invention comprises a memory cell having one transistor and one stacked capacitor. The stacked capacitor is stacked on the surface of a semiconductor substrate. Further, the stacked capacitor has a structure extending on a gate electrode and a word line through an insulating layer. A lower electrode layer of the capacitor had various concave/convex shapes, i.e. step portions and projecting portions formed on the surface thereof. These shapes are made by employing various etching processes. The lower electrode layer has such various concave/convex shapes formed thereon, so that a surface area and capacitance of the capacitor can be increased.

摘要翻译： 根据本发明的半导体存储器件包括具有一个晶体管和一个堆叠电容器的存储单元。 堆叠的电容器堆叠在半导体衬底的表面上。 此外，层叠电容器具有通过绝缘层在栅电极和字线上延伸的结构。 电容器的下电极层具有各种凹凸形状，即台阶部分和形成在其表面上的突出部分。 这些形状通过采用各种蚀刻工艺制成。 下电极层在其上形成有各种凹凸形状，从而能够提高电容器的表面积和电容。

公开(公告)号：US5177571A

公开(公告)日：1993-01-05

申请号：US425017

申请日：1989-10-23

申请人： Shinichi Satoh ,  Wataru Wakamiya ,  Takahisa Eimori ,  Hiroji Ozaki ,  Yoshinori Tanaka

发明人： Shinichi Satoh ,  Wataru Wakamiya ,  Takahisa Eimori ,  Hiroji Ozaki ,  Yoshinori Tanaka

IPC分类号： H01L21/265 ,  H01L21/336 ,  H01L29/423 ,  H01L29/78

CPC分类号： H01L29/6659 ,  H01L29/42376 ,  H01L29/7836

摘要： Disclosed is an LDDMOSFET, in which a gate electrode (2) having a cross-sectional shape having a lower side and an upper side longer than the upper side is formed of only conductive materials, and diffusion layers (5b, 6b) of low concentration and high concentration constituting a drain are both formed so as to be overlapped with portions below the gate electrode (2) utilizing the shape of this gate electrode (2). Since the gate electrode (2) is formed of only the conductive materials, it becomes easy to word the gate electrode (2) so as to be in a desired shape. Since the diffusion layers (5b, 6b) of low concentration and high concentration constituting the drain are both overlapped with the portions below the gate electrode (2), the performance as a transistor is not degraded even if the polarity of the surface of the diffusion layer (5b, 6b) of low concentration is inverted by the effect of hot electrons.

摘要翻译： 公开了一种LDDMOSFET，其中具有仅具有导电材料的具有下侧且上侧比上侧更长的截面形状的栅电极（2）和低浓度的扩散层（5b，6b） 并且构成漏极的高浓度都利用该栅电极（2）的形状形成为与栅电极（2）下方的部分重叠。 由于栅电极（2）仅由导电材料形成，容易使栅电极（2）成为期望的形状。 由于构成漏极的低浓度和高浓度的扩散层（5b，6b）都与栅电极（2）下方的部分重叠，因此即使扩散表面的极性，晶体管的性能也不会降低 低浓度的层（5b，6b）由热电子的作用而反转。

公开(公告)号：US5051948A

公开(公告)日：1991-09-24

申请号：US434692

申请日：1989-10-20

申请人： Kiyoto Watabe ,  Hirofumi Shinohara ,  Takahisa Eimori ,  Hideaki Arima ,  Natsuo Ajika ,  Yuichi Nakashima ,  Shinichi Satoh

发明人： Kiyoto Watabe ,  Hirofumi Shinohara ,  Takahisa Eimori ,  Hideaki Arima ,  Natsuo Ajika ,  Yuichi Nakashima ,  Shinichi Satoh

IPC分类号： G11C15/04

CPC分类号： G11C15/046

摘要： In a content addressable memory (CAM) cell according to the present invention, a pair of non-volatile memory transistors hold data, whereby stored data will not disappear even if power is cut. Conducting terminals of these non-volatile transistors are connected to a bit line pair, so that the stored data can be directly read out from the bit line pair. Further, the invention CAM system converts the value of a current flowing in a match line into a voltage value to perform content reference, and hence the same can be employed as an associative memory system.

摘要翻译： PCT No.PCT / JP89 / 00179 Sec。 371日期1989年10月20日第 102（e）日期1989年10月20日PCT提交1989年2月22日PCT公布。 出版物WO89 / 08314 日本1989年9月8日。在根据本发明的内容可寻址存储器（CAM）单元中，一对非易失性存储晶体管保持数据，由此即使切断功率，存储的数据也不会消失。 这些非易失性晶体管的导通端子连接到位线对，从而可以从位线对直接读出所存储的数据。 此外，本发明CAM系统将在匹配线中流动的电流的值转换为电压值以执行内容参考，因此可以将其用作关联存储器系统。

公开(公告)号：US5049959A

公开(公告)日：1991-09-17

申请号：US526943

申请日：1990-05-21

申请人： Shinichi Satoh

发明人： Shinichi Satoh

IPC分类号： H01L27/10 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/04 ,  H01L27/108

CPC分类号： H01L27/10829

摘要： A semiconductor integrated circuit device having at least one capacitor comprises a first semiconductor layer (9) having a relatively high impurity concentration and a second semiconductor layer (10) formed on said first semiconductor layer and having a relatively low impurity concentration of the same conductivity type as that of said first semiconductor layer. The capacitor is formed with a groove (15) extending at least up to an interface between the first semiconductor layer (9) and the second semiconductor layer (10) and the capacitor electrode (5) extends along the groove (15), so that a storage capacitance of the capacitor can be increased.

摘要翻译： 具有至少一个电容器的半导体集成电路器件包括具有相对高的杂质浓度的第一半导体层（9）和形成在所述第一半导体层上并具有相同导电类型的相对低的杂质浓度的第二半导体层（10） 如所述第一半导体层的那样。 电容器形成有至少延伸到第一半导体层（9）和第二半导体层（10）之间的界面并且电容器电极（5）沿着沟槽（15）延伸的沟槽（15），使得 可以增加电容器的存储电容。

公开(公告)号：US4960847A

公开(公告)日：1990-10-02

申请号：US216163

申请日：1988-07-07

申请人： Masatoshi Arai ,  Shinichi Satoh

发明人： Masatoshi Arai ,  Shinichi Satoh

IPC分类号： C08L83/06 ,  C08K5/54 ,  C08K5/5425 ,  C08L83/04

CPC分类号： C08K5/5425 ,  C08L83/04 ,  C08G77/16 ,  C08G77/20 ,  C08G77/24 ,  C08G77/70 ,  Y10S528/901

摘要： A room temperature vulcanizable organopolysiloxane composition capable of yielding a cured product exhibiting an improved resistance to oil and improved adhesiveness to metals, which comprises a diorganopolysiloxane blocked with a hydroxyl group at both ends of the molecule, an organosilane or siloxane having at least two hydrolyzable groups, each bonded to a silicone atom, in one molecule, and an organosilane or siloxane having at least one vinyl group and at least one hydroxyl group, each bonded to a silicon atom, in one molecule. The composition may further comprise a filler.

摘要翻译： 能够得到具有改善的耐油性和改善与金属的粘附性的固化产物的室温可硫化有机基聚硅氧烷组合物，其包含在分子两端用羟基封端的二有机聚硅氧烷，具有至少两个可水解基团的有机硅烷或硅氧烷 各自在一个分子中与硅原子键合，并且在一个分子中键合有至少一个乙烯基和至少一个羟基的有机硅烷或硅氧烷，各自与硅原子键合。 组合物还可以包含填料。

公开(公告)号：US4887137A

公开(公告)日：1989-12-12

申请号：US170028

申请日：1988-03-04

申请人： Masahiro Yoneda ,  Masahiro Hatanaka ,  Yoshio Kohno ,  Shinichi Satoh ,  Hidekazu Oda ,  Koichi Moriizumi

发明人： Masahiro Yoneda ,  Masahiro Hatanaka ,  Yoshio Kohno ,  Shinichi Satoh ,  Hidekazu Oda ,  Koichi Moriizumi

IPC分类号： H01L23/528 ,  H01L27/108

CPC分类号： H01L27/10829 ,  H01L23/528 ,  H01L27/10805 ,  H01L2924/0002 ,  Y10S257/911

摘要： A semiconductor memory device comprises four memory cells (4a, 6) arranged in point symmetry on a semiconductor substrate (1), and an insulating layer (10) covering the memory cells and having one contact hole (2) placed in the center of the point symmetry, with the contact hole enabling electrical connection to each of the memory cells.

摘要翻译： 半导体存储器件包括在半导体衬底（1）上以点对称布置的四个存储单元（4a，6）和覆盖存储单元的绝缘层（10），并且具有一个接触孔（2） 点对称，其中接触孔能够电连接到每个存储单元。

公开(公告)号：US4861908A

公开(公告)日：1989-08-29

申请号：US216023

申请日：1988-07-07

申请人： Shinichi Satoh ,  Kazutoshi Fujioka

发明人： Shinichi Satoh ,  Kazutoshi Fujioka

IPC分类号： C08F299/08 ,  C07F7/18 ,  C08F290/00 ,  C08K5/5455

CPC分类号： C07F7/1836 ,  C08K5/5455

摘要： An organosilicon compound represented by the general formula (I): ##STR1## wherein R.sup.1 may be the same or different and represents an alkyl group having 1 to 8 carbon atoms; R.sup.2 and R.sup.3 may be the same or different and represents an alkylene group having 1 to 8 carbon atoms; and R.sup.4 represents a hydrogen atom or an alkyl group having 1 to 8 carbon atoms,and a process for preparing the same. This compound is useful for improving adhesive properties of UV curable silicone compositions and the like.

公开(公告)号：US07305852B2

公开(公告)日：2007-12-11

申请号：US09863750

申请日：2001-05-23

申请人： Yoshihiko Gotoh ,  Shinichi Satoh ,  Masakazu Kudoh

发明人： Yoshihiko Gotoh ,  Shinichi Satoh ,  Masakazu Kudoh

IPC分类号： C03B19/09 ,  C03B15/18

CPC分类号： F23D14/32 ,  C03B17/04 ,  C03B17/06 ,  C03B19/01 ,  C03B19/09 ,  C03B19/1407 ,  C03B19/1423 ,  C03B2207/06 ,  C03B2207/12 ,  C03B2207/14 ,  C03B2207/42 ,  C03B2207/54 ,  F23C2900/9901 ,  F23D14/22

摘要： The invention provides a method for manufacturing a large scale quartz glass slab ingot in a flame hydrolysis reaction in a furnace, including the steps of rotating the furnace, depositing a fused silica on a furnace bed, and extending the deposit outwardly by heating and rotation of the furnace, thereby a quartz glass slab ingot is obtained. A quartz glass burner is installed at the ceiling of the furnace, hydrogen gas supplied to the burner flows down along the tapered wall of the oxygen chamber and is ejected into the outer casing. Part of the hydrogen gas is deflected to the center of the burner and mixed with the oxygen just after the ejection from the oxygen gas nozzles. Thereby, the flame is formed smoothly and the thermal efficiency is improved. The flame becomes wide enough and the silica powder transported by the hydrogen gas is uniformly fused by the flame and heat capacity of the fused silica.

摘要翻译： 本发明提供了一种用于在炉中进行火焰水解反应的大型石英玻璃板坯的制造方法，包括以下步骤：使炉子旋转，将熔融二氧化硅沉积在炉床上，并通过加热和旋转来向外延伸沉积物 从而得到石英玻璃板坯锭。 石英玻璃燃烧器安装在炉顶上，供给燃烧器的氢气沿着氧气室的锥形壁向下流动，并被排出到外壳中。 氢气的一部分被偏转到燃烧器的中心并且刚刚从氧气喷嘴喷出之后与氧气混合。 由此，能够平稳地形成火焰，提高热效率。 火焰变得足够宽，由氢气输送的二氧化硅粉末通过熔融二氧化硅的火焰和热容均匀地熔合。

公开(公告)号：US06619548B1

公开(公告)日：2003-09-16

申请号：US09598702

申请日：2000-06-21

申请人： Motohiko Itoh ,  Shinichi Satoh ,  Mitsuo Watanabe ,  Hiroaki Kawai ,  Isao Iwaguchi

发明人： Motohiko Itoh ,  Shinichi Satoh ,  Mitsuo Watanabe ,  Hiroaki Kawai ,  Isao Iwaguchi

IPC分类号： G06K710

CPC分类号： G06K7/10851 ,  G06K7/10574 ,  G06K7/14 ,  G06K7/1486

摘要： A method of the invention reads a bar code based on bar-code data obtained by scanning the bar code with light. The method includes the steps of a) obtaining bar-code data, b) obtaining a sum of bar-data widths with respect to a predetermined number of bar data provided in at least one of a preceding portion and a following portion of the bar-code data, c) repeating the steps a) and b) once to obtain another sum, and d) making a comparison of the sum with another sum. The methods further includes a step of accepting the bar-code data as valid data when a result of the comparison satisfies a predetermined condition.

摘要翻译： 本发明的方法基于通过用光扫描条形码而获得的条形码数据来读取条形码。 该方法包括以下步骤：a）获得条形码数据，b）相对于在条形码数据的前一部分和后续部分中的至少一个中提供的预定数量的条形数据获得条形数据宽度之和， 代码数据，c）重复步骤a）和b）一次以获得另一个总和，以及d）对所述和与另一个和进行比较。 所述方法还包括当比较结果满足预定条件时接受条形码数据作为有效数据的步骤。