公开(公告)号：US20230122980A1

公开(公告)日：2023-04-20

申请号：US18083434

申请日：2022-12-16

Applicant: Tokyo Electron Limited

Inventor： Kae KUMAGAI ,  Toru HISAMATSU ,  Masanobu HONDA

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/52 ,  H01L21/308 ,  H01L21/3065 ,  H01L21/66 ,  H01J37/32

Abstract: An apparatus for processing a substate includes: a chamber having a gas inlet and a gas outlet; a substrate support disposed in the chamber; a plasma generator; and a controller programmed to: (a) place a substrate on the substrate support, the substrate having a pattern, (b) supply a first reactive species into the chamber to adsorb the first reactive species onto the pattern of the substrate, (c) partially purge the first reactive species from the chamber to adjust an amount of a residual first reactive species in the chamber, (d) supply a second reactive species into the chamber, and (e) expose the substrate to a plasma generated from the residual first reactive species and the second reactive species by the plasma generator to form a film on the pattern of the substrate.

公开(公告)号：US20220122840A1

公开(公告)日：2022-04-21

申请号：US17560245

申请日：2021-12-22

Applicant: Tokyo Electron Limited

Inventor： Yoshihide KIHARA ,  Toru HISAMATSU ,  Tomoyuki OISHI

IPC: H01L21/027 ,  H01L21/02 ,  H01L21/3213 ,  H01L21/033 ,  H01L21/311 ,  H01J37/32 ,  G03F1/80 ,  G03F1/48

Abstract: According to an embodiment, a wafer (W) includes a layer (EL) to be etched, an organic film (OL), an antireflection film (AL), and a mask (MK1), and a method (MT) according to an embodiment includes a step of performing an etching process on the antireflection film (AL) by using the mask (MK1) with plasma generated in a processing container (12), in the processing container (12) of a plasma processing apparatus (10) in which the wafer (W) is accommodated, and the step includes steps ST3a to ST4 of conformally forming a protective film (SX) on the surface of the mask (MK1), and steps ST6a to ST7 of etching the antireflection film (AL) by removing the antireflection film (AL) for each atomic layer by using the mask (MK1) on which the protective film (SX) is formed.

公开(公告)号：US20220122802A1

公开(公告)日：2022-04-21

申请号：US17565183

申请日：2021-12-29

Applicant: TOKYO ELECTRON LIMITED

Inventor： Daisuke NISHIDE ,  Toru HISAMATSU ,  Shinya ISHIKAWA

IPC: H01J37/18 ,  C23C16/505 ,  H01J37/32 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/3213 ,  H01L21/311

Abstract: An etching method includes: providing a substrate having a film and a patterned mask on the film; forming a silicon-containing layer including silicon, carbon, and nitrogen on the substrate using a precursor gas containing silicon; and performing a plasma etching on the film. The substrate is placed under a depressurized environment for a time period from a start time point of the step of forming the silicon-containing layer on the substrate to an end time point of the step of performing the plasma etching on the film.

公开(公告)号：US20220115235A1

公开(公告)日：2022-04-14

申请号：US17298332

申请日：2019-07-12

Applicant: TOKYO ELECTRON LIMITED

Inventor： Toru HISAMATSU ,  Takayuki KATSUNUMA ,  Shinya ISHIKAWA ,  Yoshihide KIHARA ,  Masanobu HONDA

IPC: H01L21/033 ,  H01L21/311

Abstract: A substrate processing method includes: providing a substrate including a mask; forming a film on the mask; forming a reaction layer on a surface layer of the film; and removing the reaction layer by applying energy to the reaction layer.

公开(公告)号：US20220093406A1

公开(公告)日：2022-03-24

申请号：US17540257

申请日：2021-12-02

Applicant: Tokyo Electron Limited

Inventor： Yuki IIJIMA ,  Toru HISAMATSU ,  Kae KUMAGAI

IPC: H01L21/3065 ,  G03F7/20 ,  H01L21/311 ,  H01L21/768 ,  H01L21/3213 ,  H01L21/67

Abstract: A method for processing a substrate includes a step of providing a substrate and a first step. In the step of providing a substrate, a substrate having a first film and a second film formed on the first film and having a pattern formed thereon is provided. In the first step, a protective film is formed on a side wall of the first film by a product generated by sputtering of the second film while a first processing gas is turned into plasma and the first film is etched simultaneously with the sputtering of the second film.

公开(公告)号：US20210384039A1

公开(公告)日：2021-12-09

申请号：US17409645

申请日：2021-08-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takayuki HOSHI ,  Masanobu HONDA ,  Masahiro TABATA ,  Toru HISAMATSU

IPC: H01L21/311

Abstract: An etching method includes a step of selectively forming deposit on a top surface of a mask disposed on a film of a substrate, a step of etching the film after the step of forming the deposit, a step of forming a layer of chemical species included in plasma of a processing gas, on the substrate, and a step of supplying ions from plasma of an inert gas to the substrate so that the chemical species react with the film.

公开(公告)号：US20210327719A1

公开(公告)日：2021-10-21

申请号：US17362285

申请日：2021-06-29

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masahiro TABATA ,  Toru HISAMATSU ,  Yoshihide KIHARA ,  Masanobu HONDA

IPC: H01L21/311 ,  H01J37/32 ,  H01L21/3065 ,  H05H1/46

Abstract: In an embodiment, in the method for processing a workpiece including an etching target layer containing silicon oxide, a mask provided on the etching target layer, and an opening provided in the mask and exposing the etching target layer, according to the embodiment, the etching target layer is etched by removing the etching target layer for each atomic layer through repetitive execution of a sequence of generating plasma of a first processing gas containing nitrogen, forming a mixed layer containing ions included in the plasma on an atomic layer on an exposed surface of the etching target layer, generating plasma of a second processing gas containing fluorine, and removing the mixed layer by radicals included in the plasma. The plasma of the second processing gas contains the radicals that remove the mixed layer containing silicon nitride.

公开(公告)号：US20210143004A1

公开(公告)日：2021-05-13

申请号：US17097141

申请日：2020-11-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kae KUMAGAI ,  Toru HISAMATSU ,  Masanobu HONDA

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/52 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/66 ,  H01J37/32

Abstract: A method for processing a substrate includes: (a) exposing a substrate with a pattern formed on a surface thereof to a first reactive species in a chamber, thereby adsorbing the first reactive species onto the surface of the substrate; (b) exposing the substrate to plasma formed by a second reactive species in the chamber, thereby forming a film on the surface of the substrate; and (c) repeating a processing including (a) and (b) two or more times while changing a residence amount of the first reactive species at a time of starting (b).

公开(公告)号：US20210111034A1

公开(公告)日：2021-04-15

申请号：US17107967

申请日：2020-12-01

Applicant: Tokyo Electron Limited

Inventor： Toru HISAMATSU ,  Masanobu HONDA ,  Yoshihide KIHARA

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/67 ,  H01L21/033 ,  H01L21/3065 ,  H01L21/027

Abstract: A method for processing a substrate in a plasma chamber is provided. The method includes providing a substrate on which an underlying layer to be etched and a mask are formed. The method further includes forming a protective film on the mask. The method further includes performing an anisotropic deposition to selectively form a deposition layer on a top portion of the mask.

公开(公告)号：US20210098263A1

公开(公告)日：2021-04-01

申请号：US17039295

申请日：2020-09-30

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shinya ISHIKAWA ,  Toru HISAMATSU

IPC: H01L21/311 ,  H01J37/32 ,  H01L21/027

Abstract: A method for processing a substrate for processing a substrate includes: (a) providing a substrate having an etching region and a patterned region on the etching region; (b) forming an organic film on a surface of the substrate; and (c) etching the etching region using plasma generated from a processing gas through the patterned region. The step (b) includes (b1) supplying a first gas containing an organic compound to the substrate to form a precursor layer on the substrate, and (b2) supplying a second gas containing a modifying gas to the substrate and supplying energy to the precursor layer and/or the second gas to modify the precursor layer.