公开(公告)号：US20160314982A1

公开(公告)日：2016-10-27

申请号：US15137095

申请日：2016-04-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yoshihide KIHARA ,  Tomoyuki OISHI ,  Toru HISAMATSU

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/033 ,  H01L21/67 ,  H01L21/311

CPC classification number: H01L21/3065 ,  C23C16/402 ,  C23C16/45534 ,  C23C16/45542 ,  H01J2237/334 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/67069

Abstract: A method for processing a target object by using a capacitively coupled plasma processing apparatus includes a first step of supplying a first gas containing a silicon-containing gas into the processing chamber where a target object is accommodated; a second step of generating a plasma of a rare gas in the processing chamber after executing the first step; a third step of generating a plasma of a second gas containing oxygen gas in the processing chamber after executing the second step; and a fourth step of generating a plasma of a rare gas in the processing chamber after executing the third step. A silicon oxide film is formed by repeatedly executing a sequence including the first step to the fourth step. A negative DC voltage is applied to the upper electrode in at least any one of the second step to the fourth step.

Abstract translation: 通过使用电容耦合的等离子体处理装置来处理目标物体的方法包括：将含有含硅气体的第一气体供给到容纳有目标物体的处理室中的第一步骤; 在执行第一步骤之后在处理室中产生稀有气体的等离子体的第二步骤; 在执行第二步骤之后，在处理室中产生含有氧气的第二气体的等离子体的第三步骤; 以及在执行第三步之后在处理室中产生稀有气体的等离子体的第四步骤。 通过重复执行包括第一步骤至第四步骤的序列来形成氧化硅膜。 在第二步骤至第四步骤中的至少任一步骤中，对上部电极施加负的直流电压。

公开(公告)号：US20220122840A1

公开(公告)日：2022-04-21

申请号：US17560245

申请日：2021-12-22

Applicant: Tokyo Electron Limited

Inventor： Yoshihide KIHARA ,  Toru HISAMATSU ,  Tomoyuki OISHI

IPC: H01L21/027 ,  H01L21/02 ,  H01L21/3213 ,  H01L21/033 ,  H01L21/311 ,  H01J37/32 ,  G03F1/80 ,  G03F1/48

Abstract: According to an embodiment, a wafer (W) includes a layer (EL) to be etched, an organic film (OL), an antireflection film (AL), and a mask (MK1), and a method (MT) according to an embodiment includes a step of performing an etching process on the antireflection film (AL) by using the mask (MK1) with plasma generated in a processing container (12), in the processing container (12) of a plasma processing apparatus (10) in which the wafer (W) is accommodated, and the step includes steps ST3a to ST4 of conformally forming a protective film (SX) on the surface of the mask (MK1), and steps ST6a to ST7 of etching the antireflection film (AL) by removing the antireflection film (AL) for each atomic layer by using the mask (MK1) on which the protective film (SX) is formed.

公开(公告)号：US20200303181A1

公开(公告)日：2020-09-24

申请号：US16898492

申请日：2020-06-11

Applicant: Tokyo Electron Limited

Inventor： Yoshihide KIHARA ,  Toru HISAMATSU ,  Tomoyuki OISHI

IPC: H01L21/027 ,  H01L21/311 ,  G03F1/80 ,  G03F1/48 ,  H01L21/02 ,  H01L21/033 ,  H01J37/32 ,  H01L21/3213

Abstract: According to an embodiment, a wafer (W) includes a layer (EL) to be etched, an organic film (OL), an antireflection film (AL), and a mask (MK1), and a method (MT) according to an embodiment includes a step of performing an etching process on the antireflection film (AL) by using the mask (MK1) with plasma generated in a processing container (12), in the processing container (12) of a plasma processing apparatus (10) in which the wafer (W) is accommodated, and the step includes steps ST3a to ST4 of conformally forming a protective film (SX) on the surface of the mask (MK1), and steps ST6a to ST7 of etching the antireflection film (AL) by removing the antireflection film (AL) for each atomic layer by using the mask (MK1) on which the protective film (SX) is formed.

公开(公告)号：US20190108997A1

公开(公告)日：2019-04-11

申请号：US16089024

申请日：2017-03-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yoshihide KIHARA ,  Toru HISAMATSU ,  Tomoyuki OISHI

IPC: H01L21/027 ,  H01L21/311 ,  H01L21/02 ,  G03F1/48 ,  G03F1/80

CPC classification number: H01L21/0276 ,  G03F1/48 ,  G03F1/80 ,  H01J37/32 ,  H01J2237/334 ,  H01L21/02164 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0273 ,  H01L21/0275 ,  H01L21/0337 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32139

Abstract: According to an embodiment, a wafer W includes a layer EL to be etched, an organic film OL, an antireflection film AL, and a mask MK1, and a method MT according to an embodiment includes a step of performing an etching process on the antireflection film AL by using the mask MK1 with plasma generated in a processing container 12, in the processing container 12 of a plasma processing apparatus 10 in which the wafer W is accommodated, and the step includes steps ST3a to ST4 of conformally forming a protective film SX on the surface of the mask MK1, and steps ST6a to ST7 of etching the antireflection film AL by removing the antireflection film AL for each atomic layer by using the mask MK1 on which the protective film SX is formed.

公开(公告)号：US20170098528A1

公开(公告)日：2017-04-06

申请号：US15284635

申请日：2016-10-04

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yoshihide KIHARA ,  Toru HISAMATSU ,  Masanobu HONDA ,  Tomoyuki OISHI

IPC: H01J37/32 ,  H01L21/027 ,  H01L21/311

CPC classification number: H01J37/32871 ,  H01J37/32009 ,  H01J37/32082 ,  H01J37/32449 ,  H01J37/32862 ,  H01J2237/334 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0273 ,  H01L21/0276 ,  H01L21/0337 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32139

Abstract: A method for processing a target object includes a formation step of forming a silicon oxide film in a processing chamber by repeatedly executing a sequence including a first step of supplying a first gas containing aminosilane-based gas, a second step of purging a space in the processing chamber after the first step, a third step of generating a plasma of a second gas containing oxygen gas after the second step, and a fourth step of purging the space after the third step. The method further includes a preparation step executed before the target object is accommodated in the processing chamber and a processing step of performing an etching process on the target object. The preparation step is performed before the processing step. The formation step is performed in the preparation step and the processing step. In the first step, a plasma of the first gas is not generated.