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    Substrate processing apparatus and method for manufacturing semiconductor device
    21.
    发明申请
    Substrate processing apparatus and method for manufacturing semiconductor device 有权
    基板处理装置及半导体装置的制造方法

    公开(公告)号：US20080264337A1

    公开(公告)日：2008-10-30

    申请号：US12076508

    申请日：2008-03-19

    申请人： Atsushi Sano ,  Hideharu Itatani ,  Mitsuro Tanabe

    发明人： Atsushi Sano ,  Hideharu Itatani ,  Mitsuro Tanabe

    IPC分类号： C23C16/52 ,  C23C14/34 ,  H01L21/00

    CPC分类号： C23C16/4408 ,  Y10T29/41

    摘要： A substrate processing apparatus and a method for manufacturing a semiconductor device whereby foreign matter can be prevented from being adsorbed on the substrate, by suppressing agitation of foreign matter present in the processing chamber. The substrate processing apparatus comprises a processing chamber for processing a substrate; a processing gas feeding line for feeding a processing gas into the processing chamber; an inert gas feeding line for feeding an inert gas into the processing chamber; an inert gas vent line provided in the inert gas feeding line, for exhausting the inert gas fed into the inert gas feeding line without feeding the inert gas into the processing chamber; a first valve provided in the inert gas feeding line, on a downstream side of a part where the inert gas vent line is provided in the inert gas feeding line; a second valve provided in the inert gas vent line; and an exhaust line that exhausts an inside of the processing chamber.

    摘要翻译： 一种基板处理装置和半导体装置的制造方法，通过抑制处理室中存在的异物的搅动，能够防止异物吸附在基板上。 基板处理装置包括用于处理基板的处理室; 处理气体供给管线，用于将处理气体供给到处理室中; 用于将惰性气体供给到处理室中的惰性气体供给管线; 设置在惰性气体供给管线中的惰性气体排出管线，用于排出供入惰性气体供给管线的惰性气体，而不将惰性气体供给到处理室中; 设置在所述惰性气体供给管线中的第一阀，在所述惰性气体供给管路中设置有所述惰性气体排出管线的部分的下游侧; 设置在惰性气体排放管线中的第二阀; 以及排出处理室内部的排气管。

    ALL-SOLID-STATE LITHIUM-ION SECONDARY BATTERY AND PRODUCTION METHOD THEREOF
    22.
    发明申请
    ALL-SOLID-STATE LITHIUM-ION SECONDARY BATTERY AND PRODUCTION METHOD THEREOF 审中-公开
    全固态锂离子二次电池及其生产方法

    公开(公告)号：US20080241665A1

    公开(公告)日：2008-10-02

    申请号：US12053997

    申请日：2008-03-24

    申请人： Atsushi Sano

    发明人： Atsushi Sano

    IPC分类号： H01M10/36 ,  H01M4/00 ,  B05D3/00

    CPC分类号： H01M10/0562 ,  H01M4/13 ,  H01M4/139 ,  H01M4/1391 ,  H01M4/1395 ,  H01M4/362 ,  H01M4/625 ,  H01M10/052 ,  H01M10/0525 ,  H01M10/058 ,  H01M10/0585 ,  H01M2300/0068 ,  H01M2300/0071

    摘要： An all-solid-state lithium-ion secondary battery has an anode, a cathode, a solid electrolyte layer disposed between the anode and the cathode, and at least one of a first mixed region formed at an interface between the anode and the solid electrolyte layer and containing a constituent material of the anode and a constituent material of the solid electrolyte layer, and a second mixed region formed at an interface between the cathode and the solid electrolyte layer and containing a constituent material of the cathode and a constituent material of the solid electrolyte layer.

    摘要翻译： 全固态锂离子二次电池具有阳极，阴极，设置在阳极和阴极之间的固体电解质层，以及形成在阳极和固体电解质之间的界面处的第一混合区域中的至少一个 并且包含阳极的构成材料和固体电解质层的构成材料，以及形成在阴极和固体电解质层之间的界面处并且包含阴极的构成材料和第二混合区域的构成材料的第二混合区域 固体电解质层。

    Method For Manufacturing Semiconductor Device, And Substrate Processing Apparatus
    23.
    发明申请
    Method For Manufacturing Semiconductor Device, And Substrate Processing Apparatus 有权
    半导体器件制造方法及基板处理装置

    公开(公告)号：US20080032514A1

    公开(公告)日：2008-02-07

    申请号：US11791222

    申请日：2005-11-29

    申请人： Atsushi Sano ,  Sadayoshi Horii ,  Hideharu Itatani ,  Katsuhiko Yamamoto

    发明人： Atsushi Sano ,  Sadayoshi Horii ,  Hideharu Itatani ,  Katsuhiko Yamamoto

    IPC分类号： H01L21/31 ,  C23C16/00

    CPC分类号： H01L21/02148 ,  C23C16/401 ,  C23C16/45523 ,  H01L21/0228 ,  H01L21/31604

    摘要： The ability to control a concentration ratio of a metal and silicon in a metal silicate film is improved, allowing a high-quality semiconductor device to be manufactured. A step is provided for supplying a first raw material, which contains a metal atom, and a second raw material, which contains a silicon atom and a nitrogen atom, into a processing chamber (4); and forming on a substrate (30) a metal silicate film containing the metal atom and silicon atom. A raw material supply ratio of the first and second raw materials is controlled in the step of forming a metal silicate film, thereby controlling a concentration ratio of the metal and silicon in the resulting metal silicate film.

    摘要翻译： 提高了控制金属硅酸盐膜中的金属和硅的浓度比的能力，能够制造高品质的半导体装置。 提供了将含有金属原子的第一原料和含有硅原子和氮原子的第二原料供给到处理室（4）中的步骤; 以及在基板（30）上形成含有所述金属原子和硅原子的金属硅酸盐膜。 在形成金属硅酸盐膜的步骤中控制第一和第二原料的原料供给比，从而控制所得金属硅酸盐膜中的金属和硅的浓度比。

    Method for manufacturing semiconductor device and substrate processing apparatus
    25.
    发明申请
    Method for manufacturing semiconductor device and substrate processing apparatus 有权
    半导体装置及基板处理装置的制造方法

    公开(公告)号：US20050250341A1

    公开(公告)日：2005-11-10

    申请号：US10521248

    申请日：2003-07-15

    申请人： Hideharu Itatani ,  Sadayoshi Horii ,  Masayuki Asai ,  Atsushi Sano

    发明人： Hideharu Itatani ,  Sadayoshi Horii ,  Masayuki Asai ,  Atsushi Sano

    IPC分类号： C23C16/44 ,  C23C16/455 ,  H01L21/02 ,  H01L21/31 ,  H01L21/469

    CPC分类号： C23C16/45542 ,  C23C16/0272 ,  H01L28/55 ,  H01L28/60 ,  H01L28/90

    摘要： To obtain a conductive metal film having superior step coverage, adhesiveness, and high productivity. A conductive metal film or metal oxidized film suitable as a capacitor electrode is formed on a substrate by performing an excited-gas supplying step after a source gas supplying step. In the source gas supplying step, gas obtained by vaporizing an organic source is supplied to the substrate, and the gas thus supplied is allowed to be adsorbed on the substrate. In the excited-gas supplying step, oxygen or nitrogen containing gas excited by plasma is supplied to the substrate to decompose the source adsorbed on the substrate, thus forming a film. An initial film-forming stop is a step of forming the film by repeating the source gas supplying step and the excited-gas supplying step once or multiple times. A desired thickness can be obtained by one step of the initial film-forming step. However, thereafter, in addition to the initial film-forming step, the film-forming step may be two steps by performing the main film-forming step of simultaneously supplying the gas obtained by vaporizing the organic source and oxygen containing gas or nitrogen containing gas not excited by plasma by using a thermal CVD method.

    摘要翻译： 以获得具有优异的台阶覆盖率，粘合性和高生产率的导电金属膜。 通过在源气体供给工序之后进行激励气体供给工序，在基板上形成适合作为电容电极的导电性金属膜或金属氧化膜。 在原料气体供给工序中，将通过汽化有机源得到的气体供给到基板，由此供给的气体被吸附在基板上。 在激励气体供给步骤中，将由等离子体激发的含氧气体或氮气的气体供给到基板，以分解吸附在基板上的源，从而形成膜。 初始成膜停止是通过重复源气体供给步骤和激发气体供给步骤一次或多次来形成膜的步骤。 通过初始成膜步骤的一个步骤可以获得所需的厚度。 然而，此后，除了初始成膜步骤之外，成膜步骤可以分两步进行主要成膜步骤：同时供给通过蒸发有机源和含氧气体或含氮气体获得的气体 不使用热CVD法等离子体激发。

    Fuel supply pump having inner lubricating groove
    26.
    发明申请
    Fuel supply pump having inner lubricating groove 有权
    燃油泵具有内部润滑槽

    公开(公告)号：US20050129532A1

    公开(公告)日：2005-06-16

    申请号：US11007354

    申请日：2004-12-09

    申请人： Atsushi Sano

    发明人： Atsushi Sano

    IPC分类号： F02M37/06 ,  F02M59/10 ,  F02M59/44 ,  F02M63/00 ,  F02M63/02 ,  F04B1/04 ,  F04B27/04 ,  F01L1/34

    CPC分类号： F02M63/0225 ,  F02M59/102 ,  F02M59/44 ,  F02M63/0001 ,  F04B1/0404 ,  F04B1/0413

    摘要： A fuel supply pump includes a housing, a camshaft and a cam ring. The camshaft is rotatably supported in the housing. The cam ring is supported around a cam portion of the camshaft such that the cam ring is rotatable with respect to the cam portion. A washer member is provided between an axial end face of the cam portion and the housing, so that the cam portion and the camshaft is axially aligned. A bearing is circumferentially inserted between the end face of the cam portion and the cam ring. An axial end face of the cam ring defines oil grooves, so that lubricating oil flows from a cam chamber into a gap, which is formed between the cam portion and the bearing. Lubricating oil is sufficiently supplied to the periphery of the cam portion, so that the camshaft can be protected from seizure in the fuel supply pump.

    摘要翻译： 燃料供给泵包括壳体，凸轮轴和凸轮环。 凸轮轴可旋转地支撑在壳体中。 凸轮环围绕凸轮轴的凸轮部分被支撑，使得凸轮环可相对于凸轮部分旋转。 在凸轮部分的轴向端面和壳体之间设置有一个垫圈构件，使凸轮部分和凸轮轴轴向对准。 在凸轮部分的端面和凸轮环之间圆周地插入轴承。 凸轮环的轴向端面限定油槽，使得润滑油从凸轮室流入形成在凸轮部和轴承之间的间隙。 润滑油被充分地供给到凸轮部分的周边，使得可以保护凸轮轴免受燃料供应泵中的卡住。