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21.发明授权Insulated gate field effect transistor with an anodic oxidized gate electrode 失效具有阳极氧化栅电极的绝缘栅场效应晶体管
公开(公告)号：US5672900A
公开(公告)日：1997-09-30
申请号：US588677
申请日：1996-01-19
IPC分类号： H01L21/336 , H01L29/786 , H01L29/76 , H01L27/01 , H01L27/088 , H01L31/036
CPC分类号： H01L29/78621 , H01L29/66757 , Y10S257/90
摘要： A thin-film transistor (TFT) comprising an active region provided on a substrate and a gate electrode on the active region. A porous anodic oxide film is provided on the sides and top of the gate electrode where the lateral thickness of the anodic oxide provided on the side surface is larger than the vertical thickness of the anodic oxide provided on the top surface or where a first anodic oxide is provided on both the top and side surfaces and a second anodic oxide is provided on the side surfaces wherein the first anodic oxide is interposed between the second anodic oxide and the side surfaces of the gate electrode.
摘要翻译： 一种薄膜晶体管（TFT），包括设置在基板上的有源区和有源区上的栅电极。 设置在侧面的阳极氧化物的横向厚度大于设置在顶面上的阳极氧化物的垂直厚度的栅电极的侧面和顶部上的多孔阳极氧化膜，或第一阳极氧化物 设置在顶表面和侧表面上，并且在侧表面上设置第二阳极氧化物，其中第一阳极氧化物介于第二阳极氧化物和栅电极的侧表面之间。
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22.发明授权Process for fabricating an insulated gate field effect transistor with an anodic oxidized gate electrode 失效用阳极氧化栅电极制造绝缘栅场效应晶体管的工艺
公开(公告)号：US5576231A
公开(公告)日：1996-11-19
申请号：US460775
申请日：1995-06-02
IPC分类号： H01L21/336 , H01L29/49 , H01L29/786
CPC分类号： H01L29/4908 , H01L29/66757 , H01L29/78621 , Y10S257/90
摘要： A thin film transistor comprising a gate electrode offset from source and drain, which comprises a substrate having thereon a gate electrode fabricated on an active region provided on the substrate, wherein, an anodic oxide of the material constituting the gate electrode is provided on the side and the upper face of said gate electrode, and the anodic oxide on the side of the gate electrode is formed thicker than the anodic oxide formed on the upper face. Also claimed is a process for fabricating the above thin film transistor improved in device characteristics and product yield, which comprises forming a gate electrode with an anodically oxidizable material having thereon a masking material, providing a relatively thick porous anodic oxide film on the side of the gate electrode by anodic oxidation effected under a relatively low voltage, then forming a dense anodic oxide film on at least the upper face of the gate electrode after removing the masking material, and introducing impurities into the semiconductor layer using the gate electrode portion having thereon the anodic oxide films as a mask.
摘要翻译： 一种薄膜晶体管，包括从源极和漏极偏移的栅电极，其包括在其上设置有栅电极的衬底，所述栅电极在设置在衬底上的有源区上制造，其中，构成栅电极的材料的阳极氧化物设置在侧 和栅电极的上表面，并且形成在上电极上的阳极氧化物形成在栅电极侧的阳极氧化物。 还要求保护的是制造上述薄膜晶体管的方法，其改善了器件特性和产品产率，其包括用具有掩模材料的阳极氧化材料形成栅电极，在栅极侧提供相对较厚的多孔阳极氧化膜 通过阳极氧化在相对低的电压下进行栅极电极，然后在去除掩模材料之后在至少栅电极的上表面上形成致密的阳极氧化膜，并且使用其上具有栅极电极部分的栅极部分将杂质引入到半导体层中 阳极氧化膜作为掩模。
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公开(公告)号：US5747355A
公开(公告)日：1998-05-05
申请号：US455151
申请日：1995-05-31
IPC分类号： H01L21/336 , H01L29/786 , H01L21/786
CPC分类号： H01L29/78621 , H01L29/66757 , Y10S257/90
摘要： A method for producing a thin-film transistor (TFT) in which the gate electrode is offset from the source and drain without detriment to the characteristics of the device or to manufacturing yield, and a structure for such a TFT, are disclosed. A gate electrode is formed using a material capable of anodic oxidation, and a mask is formed on the gate electrode. Using a comparatively low voltage, a comparatively thick, porous anodic oxide film is formed on the sides of the gate electrode. The mask is then removed and using a comparatively high voltage a dense anodic oxide film is formed at least on the top of the gate electrode. Using the gate electrode having this anodic oxide on its top and sides as a mask, an impurity is introduced into the semiconductor film and an offset structure is obtained.
摘要翻译： 公开了一种制造薄膜晶体管（TFT）的方法，其中栅电极偏离源极和漏极而不损及器件的特性或制造成品率，以及这种TFT的结构。 使用能够进行阳极氧化的材料形成栅电极，在栅电极上形成掩模。 使用比较低的电压，在栅电极的侧面上形成比较厚的多孔阳极氧化膜。 然后去除掩模并且使用比较高的电压，至少在栅电极的顶部上形成致密的阳极氧化膜。 在其顶部和侧面使用具有该阳极氧化物的栅极作为掩模，将杂质引入到半导体膜中，并获得偏移结构。
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公开(公告)号：US5619045A
公开(公告)日：1997-04-08
申请号：US677175
申请日：1996-07-09
IPC分类号： H01L21/336 , H01L29/49 , H01L29/786 , H01L29/04
CPC分类号： H01L29/4908 , H01L29/66757 , H01L29/78621 , Y10S257/90
摘要： A thin film transistor comprising a gate electrode offset from source and drain, which comprises a substrate having thereon a gate electrode fabricated on an active region provided on the substrate, wherein, an anodic oxide of the material constituting the gate electrode is provided on the side and the upper face of said gate electrode, and the anodic oxide on the side of the gate electrode is formed thicker than the anodic oxide formed on the upper face. Also claimed is a process for fabricating the above thin film transistor improved in device characteristics and product yield, which comprises forming a gate electrode with an anodically oxidizable material having thereon a masking material, providing a relatively thick porous anodic oxide film on the side of the gate electrode by anodic oxidation effected under a relatively low voltage, then forming a dense anodic oxide film on at least the upper face of the gate electrode after removing the masking material, and introducing impurities into the semiconductor layer using the gate electrode portion having thereon the anodic oxide films as a mask.
摘要翻译： 一种薄膜晶体管，包括从源极和漏极偏移的栅电极，其包括在其上设置有栅电极的衬底，所述栅电极在设置在衬底上的有源区上制造，其中，构成栅电极的材料的阳极氧化物设置在侧 和栅电极的上表面，并且形成在上电极上的阳极氧化物形成在栅电极一侧的阳极氧化物。 还要求保护的是制造上述薄膜晶体管的方法，其改善了器件特性和产品产率，其包括用具有掩模材料的阳极氧化材料形成栅电极，在栅极侧提供相对较厚的多孔阳极氧化膜 通过阳极氧化在相对低的电压下进行栅极电极，然后在去除掩模材料之后在至少栅电极的上表面上形成致密的阳极氧化膜，并且使用其上具有栅极电极部分的栅极部分将杂质引入到半导体层中 阳极氧化膜作为掩模。
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公开(公告)号：US5849604A
公开(公告)日：1998-12-15
申请号：US613372
申请日：1996-03-11
申请人： Akira Sugawara , Toshimitsu Konuma
发明人： Akira Sugawara , Toshimitsu Konuma
IPC分类号： H01L21/336 , H01L21/77 , H01L21/84 , H01L29/786
CPC分类号： H01L29/66757 , H01L27/124
摘要： A resist mask is formed on an electrode mainly made of aluminum. An anodic oxide film is formed on the electrode excluding the masked region by performing anodization in an electrolyte. A contact hole can easily be formed in the masked region because the anodic oxide film is not formed there. By removing a portion of the gate electrode which corresponds to an opening in forming a contact electrode, the gate electrode can be divided at the same time as the contact electrode is formed.
摘要翻译： 在主要由铝制成的电极上形成抗蚀剂掩模。 通过在电解质中进行阳极氧化，在除了被掩蔽区域之外的电极上形成阳极氧化膜。 由于阳极氧化膜不形成在掩模区域，所以容易形成接触孔。 通过在形成接触电极时去除与开口相对应的栅电极的一部分，可以在形成接触电极的同时分割栅电极。
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公开(公告)号：US20100132851A1
公开(公告)日：2010-06-03
申请号：US12624472
申请日：2009-11-24
申请人： Weilin Gao , Hisashi Suda , Hiroto Narieda , Akira Sugawara
发明人： Weilin Gao , Hisashi Suda , Hiroto Narieda , Akira Sugawara
CPC分类号： C22C9/00 , C22F1/08 , H01L2924/0002 , H01L2924/00
摘要： A sheet material of a copper alloy has a chemical composition comprising 1.2 to 5.0 wt % of titanium, and the balance being copper and unavoidable impurities, the material having a mean crystal grain size of 5 to 25 μm and (maximum crystal grain size−minimum crystal grain size)/(mean crystal grain size) being 0.20 or less, assuming that the maximum, minimum and mean values of mean values, each of which is the mean value of crystal grain sizes in a corresponding one of a plurality of regions which are selected from the surface of the sheet material at random and which have the same shape and size, are the maximum, minimum and mean crystal grain sizes, respectively, and the material having a crystal orientation satisfying I{420}/I0{420}>1.0, assuming that the intensities of X-ray diffraction on the {420} crystal plane of the surface of the material and the standard powder of pure copper are I{420} and I0{420}, respectively.
摘要翻译： 铜合金的片材具有包含1.2〜5.0重量％的钛，余量为铜和不可避免的杂质的化学组成，该材料的平均结晶粒径为5〜25μm，（最大结晶粒径 - 最小值） 晶粒尺寸）/（平均晶粒尺寸）为0.20以下，假设平均值的最大值，最小值和平均值均为多个区域中的相应一个区域中的晶粒尺寸的平均值， 分别选自具有相同形状和大小的片材的表面，分别为最大，最小和平均晶粒尺寸，并且具有满足I {420} / I0 {420}的晶体取向的材料， > 1.0，假设材料表面的{420}晶面上的X射线衍射强度和纯铜的标准粉末分别为I {420}和I0 {420}。
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公开(公告)号：US20090216967A1
公开(公告)日：2009-08-27
申请号：US12389016
申请日：2009-02-19
申请人： Akira Sugawara
发明人： Akira Sugawara
CPC分类号： G06F11/0778 , G06F11/0706
摘要： A computer dumps information stored in a storage space used by a program, into a file when the program ends abnormally, by determining a priority representative of an order in which the information is dumped into the file, for storage areas which are predetermined areas into which the storage space is divided; compressing the information stored in each storage area in decreasing the order of priority and outputting the compressed information to the file in an order in which the information is compressed.
摘要翻译： 当程序异常地结束时，计算机将存储在程序使用的存储空间中的信息转储到文件中，通过确定代表将信息转储到文件中的顺序的优先级，作为预定区域的存储区域 存储空间分开; 以降低优先级的顺序压缩存储在每个存储区域中的信息，并以压缩信息的顺序将压缩信息输出到文件。
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公开(公告)号：US06627011B2
公开(公告)日：2003-09-30
申请号：US09910730
申请日：2001-07-23
申请人： Akira Sugawara , Kazuki Hatakeyama , Le Ling
发明人： Akira Sugawara , Kazuki Hatakeyama , Le Ling
IPC分类号： C22F108
CPC分类号： C22C9/04
摘要： Copper alloy having the basic composition Cu—Zn—Sn contains 23-28 wt % Zn and 0.3-1.8 wt % Sn and satisfies the relation 6.0≦0.25X+Y≦8.5 (where X is the addition of Zn in wt % and Y is the addition of Sn in wt %). The alloy is cast into an ingot by melting and cooling over the range from the liquidus line to 600° C. at a rate of at least 50° C./min; the ingot is hot rolled at a temperature not higher than 900° C. and then subjected to repeated cycles of cold rolling and annealing at 300-650° C. to control the size of crystal grains, thereby producing a rolled strip having a 0.2% yield strength of at least 600 N/mm2, a tensile strength of at least 650 N/mm2, an electrical conductivity of at least 20% IACS, a Young's modulus of no more than 120 kN/mm2 and a percent stress relaxation of no more than 20%.
摘要翻译： 具有基本组成为Cu-Zn-Sn的铜合金含有23-28重量％的Zn和0.3-1.8重量％的Sn，满足关系6.0 <= 0.25X + Y <= 8.5（其中X是以重量％计的Zn， Y为添加重量％的Sn）。 通过在液相线至600℃的范围内以至少50℃/ min的速率熔融和冷却将合金铸造成锭; 将锭在不高于900℃的温度下热轧，然后在300-650℃下进行冷轧和退火的重复循环，以控制晶粒的尺寸，由此制造具有0.2％ 屈服强度至少为600N / mm 2，拉伸强度为至少650N / mm 2，电导率为至少20％IACS，杨氏模量不超过120kN / mm 2 >百分比应力松弛不超过20％。
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公开(公告)号：US6149988A
公开(公告)日：2000-11-21
申请号：US208752
申请日：1998-12-10
申请人： Hisato Shinohara , Akira Sugawara
发明人： Hisato Shinohara , Akira Sugawara
CPC分类号： B41M5/24 , B23K26/0622 , B23K26/066 , B23K26/0738 , B23K26/364 , B23K26/40 , B23K2203/172 , H05K1/0306 , H05K3/027 , H05K3/38
摘要： A method for treating an object with a laser including emitting a laser beam from a laser; expanding the laser beam in a first direction; removing a portion of the laser beam though a mask, the portion including at least edges of the expanded laser beam extending in the first direction; and condensing the laser beam in a second direction orthogonal to the first direction in order to form a line-shaped laser beam on an object.
摘要翻译： 一种使用激光处理物体的方法，包括从激光器发射激光束; 沿第一方向扩展激光束; 通过掩模去除所述激光束的一部分，所述部分至少包括沿所述第一方向延伸的所述扩大的激光束的边缘; 并且在与第一方向正交的第二方向上会聚激光束，以便在物体上形成线形激光束。
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公开(公告)号：US5848726A
公开(公告)日：1998-12-15
申请号：US724247
申请日：1996-09-30
申请人： Hidekazu Yajima , Akira Sugawara
发明人： Hidekazu Yajima , Akira Sugawara
摘要： There is disclosed a vending machine in which a plurality of article columns are slant to be directed to a plurality of vending mechanisms, respectively. Each of the article columns is composed of a plurality of shelves for accommodating a row of articles. Each of the article columns is provided with a vending mechanism, so that articles of different kinds can be sold dependent on the number of the article columns. For this structure, at least one vending mechanism is set for an arbitrary one of article selection buttons. Thus, when the number of the article columns for accommodating the same kind of articles is set in accordance with the sales amount of the articles, different kinds of articles are sold out at an approximately same time.
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