公开(公告)号：US06627011B2

公开(公告)日：2003-09-30

申请号：US09910730

申请日：2001-07-23

申请人： Akira Sugawara ,  Kazuki Hatakeyama ,  Le Ling

发明人： Akira Sugawara ,  Kazuki Hatakeyama ,  Le Ling

IPC分类号： C22F108

CPC分类号： C22C9/04

摘要： Copper alloy having the basic composition Cu—Zn—Sn contains 23-28 wt % Zn and 0.3-1.8 wt % Sn and satisfies the relation 6.0≦0.25X+Y≦8.5 (where X is the addition of Zn in wt % and Y is the addition of Sn in wt %). The alloy is cast into an ingot by melting and cooling over the range from the liquidus line to 600° C. at a rate of at least 50° C./min; the ingot is hot rolled at a temperature not higher than 900° C. and then subjected to repeated cycles of cold rolling and annealing at 300-650° C. to control the size of crystal grains, thereby producing a rolled strip having a 0.2% yield strength of at least 600 N/mm2, a tensile strength of at least 650 N/mm2, an electrical conductivity of at least 20% IACS, a Young's modulus of no more than 120 kN/mm2 and a percent stress relaxation of no more than 20%.

摘要翻译： 具有基本组成为Cu-Zn-Sn的铜合金含有23-28重量％的Zn和0.3-1.8重量％的Sn，满足关系6.0 <= 0.25X + Y <= 8.5（其中X是以重量％计的Zn， Y为添加重量％的Sn）。 通过在液相线至600℃的范围内以至少50℃/ min的速率熔融和冷却将合金铸造成锭; 将锭在不高于900℃的温度下热轧，然后在300-650℃下进行冷轧和退火的重复循环，以控制晶粒的尺寸，由此制造具有0.2％ 屈服强度至少为600N / mm 2，拉伸强度为至少650N / mm 2，电导率为至少20％IACS，杨氏模量不超过120kN / mm 2 >百分比应力松弛不超过20％。

公开(公告)号：US06949150B2

公开(公告)日：2005-09-27

申请号：US10252770

申请日：2002-09-23

申请人： Akira Sugawara ,  Kazuki Hatakeyama ,  Le Ling

发明人： Akira Sugawara ,  Kazuki Hatakeyama ,  Le Ling

IPC分类号： C22C9/04 ,  C22C9/00

CPC分类号： C22C9/04

摘要： Copper alloy having the basic composition Cu—Zn—Sn contains 23-28 wt % Zn and 0.3-1.8 wt % Sn and satisfies the relation 6.0≦0.25X+Y≦8.5 (where X is the addition of Zn in wt % and Y is the addition of Sn in wt %). The alloy is cast into an ingot by melting and cooling over the range from the liquidus line to 600° C. at a rate of at least 50° C./min; the ingot is hot rolled at a temperature not higher than 900° C. and then subjected to repeated cycles of cold rolling and annealing at 300-650° C. to control the size of crystal grains, thereby producing a rolled strip having a 0.2% yield strength of at least 600 N/mm2, a tensile strength of at least 650 N/mm2, an electrical conductivity of at least 20% IACS, a Young's modulus of no more than 120 kN/mm2 and a percent stress relaxation of no more than 20%.

摘要翻译： 具有基本组成为Cu-Zn-Sn的铜合金含有23-28重量％的Zn和0.3-1.8重量％的Sn，满足关系6.0 <= 0.25X + Y <= 8.5（其中X是以重量％计的Zn， Y为添加重量％的Sn）。 通过在液相线至600℃的范围内以至少50℃/ min的速率熔融和冷却将合金铸造成锭; 将锭在不高于900℃的温度下热轧，然后在300-650℃下进行冷轧和退火的重复循环，以控制晶粒的尺寸，由此制造具有0.2％ 至少600N / mm 2的屈服强度，至少650N / mm 2的拉伸强度，至少20％IACS的电导率，杨氏模量 不大于120kN / mm 2，百分比应力松弛不超过20％。

公开(公告)号：US20100132851A1

公开(公告)日：2010-06-03

申请号：US12624472

申请日：2009-11-24

申请人： Weilin Gao ,  Hisashi Suda ,  Hiroto Narieda ,  Akira Sugawara

发明人： Weilin Gao ,  Hisashi Suda ,  Hiroto Narieda ,  Akira Sugawara

IPC分类号： C22F1/08 ,  C22C9/02 ,  C22C9/04 ,  C22C9/06 ,  C22C9/00

CPC分类号： C22C9/00 ,  C22F1/08 ,  H01L2924/0002 ,  H01L2924/00

摘要： A sheet material of a copper alloy has a chemical composition comprising 1.2 to 5.0 wt % of titanium, and the balance being copper and unavoidable impurities, the material having a mean crystal grain size of 5 to 25 μm and (maximum crystal grain size−minimum crystal grain size)/(mean crystal grain size) being 0.20 or less, assuming that the maximum, minimum and mean values of mean values, each of which is the mean value of crystal grain sizes in a corresponding one of a plurality of regions which are selected from the surface of the sheet material at random and which have the same shape and size, are the maximum, minimum and mean crystal grain sizes, respectively, and the material having a crystal orientation satisfying I{420}/I0{420}>1.0, assuming that the intensities of X-ray diffraction on the {420} crystal plane of the surface of the material and the standard powder of pure copper are I{420} and I0{420}, respectively.

摘要翻译： 铜合金的片材具有包含1.2〜5.0重量％的钛，余量为铜和不可避免的杂质的化学组成，该材料的平均结晶粒径为5〜25μm，（最大结晶粒径 - 最小值） 晶粒尺寸）/（平均晶粒尺寸）为0.20以下，假设平均值的最大值，最小值和平均值均为多个区域中的相应一个区域中的晶粒尺寸的平均值， 分别选自具有相同形状和大小的片材的表面，分别为最大，最小和平均晶粒尺寸，并且具有满足I {420} / I0 {420}的晶体取向的材料， > 1.0，假设材料表面的{420}晶面上的X射线衍射强度和纯铜的标准粉末分别为I {420}和I0 {420}。

公开(公告)号：US20090216967A1

公开(公告)日：2009-08-27

申请号：US12389016

申请日：2009-02-19

申请人： Akira Sugawara

发明人： Akira Sugawara

IPC分类号： G06F12/00 ,  G06F17/30 ,  G06F11/07

CPC分类号： G06F11/0778 ,  G06F11/0706

摘要： A computer dumps information stored in a storage space used by a program, into a file when the program ends abnormally, by determining a priority representative of an order in which the information is dumped into the file, for storage areas which are predetermined areas into which the storage space is divided; compressing the information stored in each storage area in decreasing the order of priority and outputting the compressed information to the file in an order in which the information is compressed.

摘要翻译： 当程序异常地结束时，计算机将存储在程序使用的存储空间中的信息转储到文件中，通过确定代表将信息转储到文件中的顺序的优先级，作为预定区域的存储区域 存储空间分开; 以降低优先级的顺序压缩存储在每个存储区域中的信息，并以压缩信息的顺序将压缩信息输出到文件。

公开(公告)号：US20050142705A1

公开(公告)日：2005-06-30

申请号：US11064821

申请日：2005-02-25

申请人： Toshimitsu Konuma ,  Akira Sugawara ,  Yukiko Uehara ,  Hongyong Zhang ,  Atsunori Suzuki ,  Hideto Ohnuma ,  Naoaki Yamaguchi ,  Hideomi Suzawa ,  Hideki Uochi ,  Yasuhiko Takemura

发明人： Toshimitsu Konuma ,  Akira Sugawara ,  Yukiko Uehara ,  Hongyong Zhang ,  Atsunori Suzuki ,  Hideto Ohnuma ,  Naoaki Yamaguchi ,  Hideomi Suzawa ,  Hideki Uochi ,  Yasuhiko Takemura

IPC分类号： H01L21/311 ,  H01L21/316 ,  H01L21/321 ,  H01L21/336 ,  H01L27/12 ,  H01L29/45 ,  H01L29/786 ,  H01L21/00 ,  H01L21/84

CPC分类号： H01L29/665 ,  H01L21/02145 ,  H01L21/02244 ,  H01L21/02258 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/31683 ,  H01L21/31687 ,  H01L21/321 ,  H01L27/124 ,  H01L27/127 ,  H01L29/458 ,  H01L29/66598 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627

摘要： A TFT formed on an insulating substrate source, drain and channel regions, a gate insulating film formed on at least the channel region and a gate electrode formed on the gate insulating film. Between the channel region and the drain region, a region having a higher resistivity is provided in order to reduce an Ioff current. A method for forming this structure comprises the steps of anodizing the gate electrode to form a porous anodic oxide film on the side of the gate electrode; removing a portion of the gate insulating using the porous anodic oxide film as a mask so that the gate insulating film extends beyond the gate electrode but does not completely cover the source and drain regions. Thereafter, an ion doping of one conductivity element is performed. The high resistivity region is defined under the gate insulating film.

公开(公告)号：US6149988A

公开(公告)日：2000-11-21

申请号：US208752

申请日：1998-12-10

申请人： Hisato Shinohara ,  Akira Sugawara

发明人： Hisato Shinohara ,  Akira Sugawara

IPC分类号： B23K26/06 ,  B23K26/073 ,  B41M5/24 ,  H05K1/03 ,  H05K3/02 ,  H05K3/38 ,  B05D3/06

CPC分类号： B41M5/24 ,  B23K26/0622 ,  B23K26/066 ,  B23K26/0738 ,  B23K26/364 ,  B23K26/40 ,  B23K2203/172 ,  H05K1/0306 ,  H05K3/027 ,  H05K3/38

摘要： A method for treating an object with a laser including emitting a laser beam from a laser; expanding the laser beam in a first direction; removing a portion of the laser beam though a mask, the portion including at least edges of the expanded laser beam extending in the first direction; and condensing the laser beam in a second direction orthogonal to the first direction in order to form a line-shaped laser beam on an object.

摘要翻译： 一种使用激光处理物体的方法，包括从激光器发射激光束; 沿第一方向扩展激光束; 通过掩模去除所述激光束的一部分，所述部分至少包括沿所述第一方向延伸的所述扩大的激光束的边缘; 并且在与第一方向正交的第二方向上会聚激光束，以便在物体上形成线形激光束。

公开(公告)号：US5848726A

公开(公告)日：1998-12-15

申请号：US724247

申请日：1996-09-30

申请人： Hidekazu Yajima ,  Akira Sugawara

发明人： Hidekazu Yajima ,  Akira Sugawara

IPC分类号： G07F9/02 ,  G07F9/10 ,  G07F11/08 ,  G07F11/32 ,  G07F11/72

CPC分类号： G07F9/10 ,  G07F11/08 ,  G07F11/32 ,  G07F9/02

摘要： There is disclosed a vending machine in which a plurality of article columns are slant to be directed to a plurality of vending mechanisms, respectively. Each of the article columns is composed of a plurality of shelves for accommodating a row of articles. Each of the article columns is provided with a vending mechanism, so that articles of different kinds can be sold dependent on the number of the article columns. For this structure, at least one vending mechanism is set for an arbitrary one of article selection buttons. Thus, when the number of the article columns for accommodating the same kind of articles is set in accordance with the sales amount of the articles, different kinds of articles are sold out at an approximately same time.

公开(公告)号：US5736434A

公开(公告)日：1998-04-07

申请号：US473951

申请日：1995-06-07

申请人： Toshimitsu Konuma ,  Akira Sugawara ,  Yukiko Uehara

发明人： Toshimitsu Konuma ,  Akira Sugawara ,  Yukiko Uehara

IPC分类号： C25D11/04 ,  C25D11/02 ,  H01L21/28 ,  H01L21/316 ,  H01L21/3205 ,  H01L21/321 ,  H01L21/336 ,  H01L21/768 ,  H01L23/52 ,  H01L23/522 ,  H01L29/78 ,  H01L29/786 ,  H01L21/84 ,  H01L21/326 ,  H01L21/479

CPC分类号： H01L29/66765 ,  C25D11/02 ,  H01L21/28079 ,  H01L21/321 ,  H01L21/76801 ,  H01L21/76834 ,  H01L21/76888

摘要： An anodic oxide containing impurities at a low concentration and thereby improved in film quality, and a process for fabricating the same. The process comprises increasing the current between a metallic thin film and a cathode until a voltage therebetween reaches a predetermined value, and maintaining the voltage at the predetermined value thereafter.

摘要翻译： 含有低浓度杂质，从而提高膜质量的阳极氧化物及其制造方法。 该方法包括增加金属薄膜和阴极之间的电流，直到它们之间的电压达到预定值，然后将电压保持在预定值。

公开(公告)号：US5672900A

公开(公告)日：1997-09-30

申请号：US588677

申请日：1996-01-19

申请人： Toshimitsu Konuma ,  Akira Sugawara ,  Takahiro Tsuji

发明人： Toshimitsu Konuma ,  Akira Sugawara ,  Takahiro Tsuji

IPC分类号： H01L21/336 ,  H01L29/786 ,  H01L29/76 ,  H01L27/01 ,  H01L27/088 ,  H01L31/036

CPC分类号： H01L29/78621 ,  H01L29/66757 ,  Y10S257/90

摘要： A thin-film transistor (TFT) comprising an active region provided on a substrate and a gate electrode on the active region. A porous anodic oxide film is provided on the sides and top of the gate electrode where the lateral thickness of the anodic oxide provided on the side surface is larger than the vertical thickness of the anodic oxide provided on the top surface or where a first anodic oxide is provided on both the top and side surfaces and a second anodic oxide is provided on the side surfaces wherein the first anodic oxide is interposed between the second anodic oxide and the side surfaces of the gate electrode.

摘要翻译： 一种薄膜晶体管（TFT），包括设置在基板上的有源区和有源区上的栅电极。 设置在侧面的阳极氧化物的横向厚度大于设置在顶面上的阳极氧化物的垂直厚度的栅电极的侧面和顶部上的多孔阳极氧化膜，或第一阳极氧化物 设置在顶表面和侧表面上，并且在侧表面上设置第二阳极氧化物，其中第一阳极氧化物介于第二阳极氧化物和栅电极的侧表面之间。

公开(公告)号：US5639344A

公开(公告)日：1997-06-17

申请号：US436907

申请日：1995-05-08

申请人： Toshimitsu Konuma ,  Akira Sugawara ,  Yukiko Uehara

发明人： Toshimitsu Konuma ,  Akira Sugawara ,  Yukiko Uehara

IPC分类号： C23F1/20 ,  H01L21/311 ,  H01L21/336 ,  H01L29/423 ,  H01L29/78

CPC分类号： H01L29/66757 ,  H01L21/31111 ,  H01L29/42372 ,  Y10S438/97

摘要： An etching material comprising at least phosphoric acid, acetic acid, and nitric acid, with chromic acid added therein. Also claimed is an etching process using the etching material above, provided that the process comprises selectively etching, by using the solution, an aluminum oxide layer formed on the surface of a material containing aluminum as the principal component thereof.

摘要翻译： 至少包含磷酸，乙酸和硝酸的蚀刻材料，其中加入铬酸。 还要求保护的是使用上述蚀刻材料的蚀刻工艺，条件是该方法包括通过使用溶液选择性地蚀刻形成在包含铝的材料的表面上的氧化铝层作为其主要成分。