利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

28 条记录 (耗时 0.027 秒)

    Light-emitting semiconductor device using group III nitride compound
    21.
    发明授权
    Light-emitting semiconductor device using group III nitride compound 失效
    使用III族氮化物化合物的发光半导体器件

    公开(公告)号：US5652438A

    公开(公告)日：1997-07-29

    申请号：US504340

    申请日：1995-07-19

    申请人： Michinari Sassa ,  Makoto Tamaki ,  Masayoshi Koike ,  Naoki Shibata ,  Masami Yamada ,  Takahide Oshio

    发明人： Michinari Sassa ,  Makoto Tamaki ,  Masayoshi Koike ,  Naoki Shibata ,  Masami Yamada ,  Takahide Oshio

    IPC分类号： H01L33/12 ,  H01L33/32 ,  H01L33/40 ,  H01L33/62 ,  H01L33/00

    CPC分类号： H01L33/38 ,  H01L33/32 ,  H01L33/325 ,  H01L2224/48463 ,  H01L33/382 ,  H01L33/40

    摘要： A light-emitting semiconductor device (10) consecutively has a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n.sup.+ -layer (3) of high carrier (n-type) concentration, a Si-doped (Al.sub.X2 Ga.sub.1-x2).sub.y2 In.sub.1-y2 N n.sup.+ -layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (Al.sub.x1 Ga.sub.1-x1).sub.y1 In.sub.1-y1 N emission layer (5), and a Mg-doped (Al.sub.x2 Ga.sub.1-x2).sub.y2 In.sub.1-y2 N p-layer (6). The AlN buffer layer (2) has a 500 .ANG. thickness. The GaN n.sup.+ -layer (3) is about 2.0 .mu.m thick and has a 2.times.10.sup.18 /cm.sup.3 electron concentration. The n.sup.+ -layer (4) is about 2.0 .mu.m thick and has a 2.times.10.sup.18 /cm.sup.3 electron concentration. The emission layer (5) is about 0.5 .mu.m thick. The p-layer 6 is about 1.0 .mu.m thick and has a 2.times.10.sup.17 /cm.sup.3 hole concentration. Nickel electrodes (7, 8) are connected to the p-layer (6) and n.sup.+ -layer (4), respectively. A groove (9) electrically insulates the electrodes (7, 8). Lead lines (21, 22) are connected with the electrodes (7, 8) by a wedge bonding method to desirably reduce the surface area of the electrodes on the light-emitting side of the device upon which the electrodes are situated to thereby increase light emission from the device.

    摘要翻译： 发光半导体器件（10）连续地具有蓝宝石衬底（1），AlN缓冲层（2），高载流子（n型）掺杂的硅（Si）掺杂的GaN n +层（3）， 锌（Zn）和Si掺杂（Al x Ga 1-x 1）y 1 In 1-y 1 N发射层（5）的Si掺杂（AlX2Ga1-x2）y2In1-y2N n +层（4） 和掺杂Mg的（Alx2Ga1-x2）y2In1-y2N p层（6）。 AlN缓冲层（2）具有500厚度。 GaN n +层（3）的厚度约为2.0μm，电子浓度为2×10 18 / cm 3。 n +层（4）的厚度约为2.0μm，电子浓度为2×10 18 / cm 3。 发射层（5）厚约0.5μm。 p层6的厚度约为1.0μm，空穴浓度为2×10 17 / cm 3。 镍电极（7,8）分别连接到p层（6）和n +层（4）。 一个凹槽（9）使电极（7,8）电绝缘。 引线（21,22）通过楔形接合方法与电极（7,8）连接，以期望减少电极位于其上的器件的发光侧的电极的表面积，从而增加光 从设备发射。

    Ameliorating or therapeutic agent for chronic prostatitis, interstitial cystitis and/or urination disorders
    24.
    发明授权
    Ameliorating or therapeutic agent for chronic prostatitis, interstitial cystitis and/or urination disorders 有权
    慢性前列腺炎，间质性膀胱炎和/或排尿障碍的改善或治疗剂

    公开(公告)号：US09011849B2

    公开(公告)日：2015-04-21

    申请号：US13583408

    申请日：2011-03-10

    申请人： Makoto Tamaki

    发明人： Makoto Tamaki

    IPC分类号： A61K39/285 ,  A61K39/295 ,  A61K39/00 ,  A61K35/36

    CPC分类号： A61K35/36 ,  A61K2039/515

    摘要： The purpose of the present invention is to provide a medicinal agent which is useful for amelioration or treatment of chronic prostatitis, interstitial cystitis and/or urination disorders. The present invention relates to a novel medical use of an extract from inflamed tissues inoculated with vaccinia virus, and more particularly, it relates to an ameliorating or therapeutic agent for chronic prostatitis, interstitial cystitis and/or urination disorders containing the extract as an active ingredient. The medicinal agent of the present invention containing the extract as an active ingredient is extremely useful as a highly effective and highly safe ameliorating or therapeutic agent for chronic prostatitis, interstitial cystitis and/or urination disorders.

    摘要翻译： 本发明的目的是提供一种可用于改善或治疗慢性前列腺炎，间质性膀胱炎和/或排尿障碍的药剂。 本发明涉及用痘苗病毒接种的发炎组织的提取物的新型医疗用途，更具体地涉及用于慢性前列腺炎，间质性膀胱炎和/或排尿障碍的改善或治疗剂，其含有提取物作为活性成分 。 含有提取物作为活性成分的本发明的药剂作为慢性前列腺炎，间质性膀胱炎和/或排尿障碍的高效，高度安全的改善或治疗剂是非常有用的。

    INFORMATION TERMINAL DEVICE AND METHOD OF PERSONAL AUTHENTICATION USING THE SAME
    25.
    发明申请
    INFORMATION TERMINAL DEVICE AND METHOD OF PERSONAL AUTHENTICATION USING THE SAME 有权
    信息终端装置和使用该方法的个人认证方法

    公开(公告)号：US20130086671A1

    公开(公告)日：2013-04-04

    申请号：US13703690

    申请日：2011-06-13

    申请人： Makoto Tamaki

    发明人： Makoto Tamaki

    IPC分类号： G06F21/44

    CPC分类号： H04L63/0846 ,  G06F3/04883 ,  G06F21/36 ,  G06F21/44 ,  H04L9/3226

    摘要： An information terminal device is provided that may use the input functionality of a touch panel to remove the restriction on the use thereof, for example, release the key lock. The information terminal device (1) is an information terminal device including a display (11) and a touch panel (12), including: a pattern storage memory (43) configured to store a release pattern that is to be entered into the touch panel (12) to remove the restriction on the use of the information terminal device, the release pattern being designated by a user as a graphic pattern; a comparison unit (44) configured to determine whether an entered pattern entered into the touch panel matches the release pattern; and a controller (34) configured to remove the restriction on the use of the information terminal device if the comparison unit (44) determines that the entered pattern matches the release pattern.

    摘要翻译： 提供一种信息终端装置，其可以使用触摸面板的输入功能来消除对其使用的限制，例如释放键锁。 信息终端装置（1）是包括显示器（11）和触摸面板（12）的信息终端装置，包括：图案存储存储器（43），被配置为存储要被输入到触摸面板的释放图案 （12），以消除对信息终端设备的使用的限制，由用户指定的释放模式作为图形; 比较单元（44），其被配置为确定输入到所述触摸面板的输入图案是否匹配所述释放模式; 以及控制器（34），其被配置为如果所述比较单元（44）确定所输入的模式与所述释放模式匹配，则去除对所述信息终端设备的使用的限制。

    Light-emitting device of gallium nitride compound semiconductor
    26.
    发明授权
    Light-emitting device of gallium nitride compound semiconductor 失效
    氮化镓化合物半导体发光元件

    公开(公告)号：US5408120A

    公开(公告)日：1995-04-18

    申请号：US6301

    申请日：1993-01-22

    申请人： Katsuhide Manabe ,  Masahiro Kotaki ,  Makoto Tamaki ,  Masafumi Hashimoto

    发明人： Katsuhide Manabe ,  Masahiro Kotaki ,  Makoto Tamaki ,  Masafumi Hashimoto

    IPC分类号： H01L33/00 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L27/14 ,  H01L29/00 ,  H01L31/00 ,  H01L49/00

    CPC分类号： H01L33/40 ,  H01L33/0037 ,  H01L33/38 ,  H01L33/32 ,  H01L33/382

    摘要： A light-emitting diode of GaN compound semiconductor emits a blue light from a plane rather than dots for improved luminous intensity. This diode includes a first electrode associated with a high-carrier density n.sup.+ layer and a second electrode associated with a high-impurity density i.sub.H -layer. These electrodes are made up of a first Ni layer (110 .ANG. thick), a second Ni layer (1000 .ANG. thick), an Al layer (1500 .ANG. thick), a Ti layer (1000 .ANG. thick), and a third Ni layer (2500 .ANG. thick). The Ni layers of dual structure permit a buffer layer to be formed between them. This buffer layer prevents the Ni layer from peeling. The direct contact of the Ni layer with GaN lowers a drive voltage for light emission and increases luminous intensity.

    摘要翻译： GaN化合物半导体的发光二极管从平面发出蓝色光而不是点以改善发光强度。 该二极管包括与高载流子密度n +层相关联的第一电极和与高杂质密度iH层相关联的第二电极。 这些电极由第一Ni层（110厚），第二Ni层（1000厚），Al层（1500厚），Ti层（1000厚）和第三Ni层（ 2500 ANGSTROM厚）。 双层结构的Ni层允许在它们之间形成缓冲层。 该缓冲层防止Ni层脱落。 Ni层与GaN的直接接触降低了用于发光的驱动电压并增加了发光强度。