公开(公告)号：US06253029B1

公开(公告)日：2001-06-26

申请号：US09213359

申请日：1998-12-17

申请人： Kazuichi Hayashi ,  Teruo Iwata

发明人： Kazuichi Hayashi ,  Teruo Iwata

IPC分类号： F24H108

CPC分类号： F04D19/04 ,  F04B37/06 ,  F04C29/0092 ,  F04D27/001 ,  F04D29/584 ,  F05D2260/607 ,  Y02T50/675

摘要： The inside of a vacuum pump is heated by means of a first heating unit to a temperature higher than the temperature at which products of reaction discharged from a process chamber are separated, and the inner surface of an exhaust pipe is heated to a temperature higher than the separation temperature by means of a second heating unit. If a vacuum process is carried out in the process chamber in this state, exhaust gas discharged from the process chamber can pass in a gaseous phase through the exhaust pipe and the vacuum pump without separating its unwanted by-products. Since a trap unit is located on the downstream side of the vacuum pump, moreover, the reaction products and the like can be prevented from adhering to the inside of the vacuum pump so that the maintenance operation is easier, although the conductance of the exhaust pipe is lowered so that the trap unit and the vacuum pump can be reduced in size.

摘要翻译： 真空泵的内部通过第一加热单元被加热到高于从处理室排出的反应产物分离的温度的温度，并且排气管的内表面被加热到高于 分离温度借助于第二加热单元。 如果在该状态下在处理室中进行真空处理，则从处理室排出的废气可以通过排气管和真空泵通过气相，而不分离其不需要的副产物。 此外，由于捕集单元位于真空泵的下游侧，所以可以防止反应产物等附着在真空泵的内部，使得维护操作更容易，尽管排气管的电导 降低收集单元和真空泵的尺寸。

公开(公告)号：US5753891A

公开(公告)日：1998-05-19

申请号：US522148

申请日：1995-08-31

申请人： Teruo Iwata ,  Kenji Nebuka ,  Mitsuaki Komino

发明人： Teruo Iwata ,  Kenji Nebuka ,  Mitsuaki Komino

IPC分类号： H01L21/00 ,  H01L35/32 ,  H05B3/04

CPC分类号： H01L21/67109

摘要： A treatment apparatus comprises a heater including an insulator carrying a to-be-treated object thereon and a resistance heating element therein for heating the to-be-treated object, an electrical supply mechanism including feeders extending into a treatment chamber from outside and terminals connecting the feeders and the resistance heating element, and a metallic pipe surrounding the terminals and those portions of the feeders which extend in the treatment chamber. A treatment apparatus for discharging an exhaust gas from the treatment chamber through an exhaust pipe by means of a suction unit comprises a first heater in the inner wall of the treatment chamber for heating the gas in the treatment chamber, and a second heater for independently heating the exhaust gas in the exhaust pipe at various portions of the exhaust pipe.

摘要翻译： 处理装置包括：加热器，其包括承载待处理物体的绝缘体和用于加热待处理物体的电阻加热元件;供电机构，包括从外部延伸到处理室中的进料器，以及连接到所述待处理物体的端子 馈电器和电阻加热元件以及围绕端子的金属管和在处理室中延伸的馈送器的那些部分。 一种用于通过抽吸单元从排出管排出废气的处理装置包括：处理室内壁中的用于加热处理室中的气体的第一加热器和用于独立加热的第二加热器 在排气管的排气管的各部分排气。

公开(公告)号：US5426865A

公开(公告)日：1995-06-27

申请号：US115550

申请日：1993-09-03

申请人： Towl Ikeda ,  Teruo Iwata

发明人： Towl Ikeda ,  Teruo Iwata

IPC分类号： C23C14/56 ,  H01L21/00

CPC分类号： H01L21/67017 ,  C23C14/56 ,  C23C14/566 ,  H01L21/67109

摘要： A vacuum creating method comprising preparing a chamber for forming a space which can be made so atmospheric and vacuous as to allow a substrate to be directly or indirectly carried in and out of the space, exhausting the chamber, filling the space in the chamber with a CO.sub.2 gas whose vapor pressure becomes larger than 1 atm at ambient temperature but smaller than 10 Torr at a temperature lower than the ambient temperature, carrying the substrate into the chamber, cooling the CO.sub.2 gas to solidify, thereby making an internal pressure in the chamber highly vacuous, carrying the substrate out of the chamber, and heating the solidified dry ice to vaporize thereby returning the internal pressure in the chamber to atmospheric pressure.

摘要翻译： 一种真空产生方法，包括制备用于形成空间的室，其可以被制成如此大气和真空，从而允许衬底被直接或间接地携带在空间中，排出空间，排出腔室，用空气填充室中的空间 CO 2气体在环境温度下变得大于1atm，在低于环境温度的温度下小于10Torr，将衬底携带到室中，冷却CO 2气体以固化，从而使室内的内部压力高 真空，将基底带出室，并加热固化的干冰蒸发，从而将室内的内压返回至大气压。

公开(公告)号：US5198755A

公开(公告)日：1993-03-30

申请号：US753078

申请日：1991-08-30

申请人： Towl Ikeda ,  Teruo Iwata ,  Issei Imahashi

发明人： Towl Ikeda ,  Teruo Iwata ,  Issei Imahashi

IPC分类号： G01R1/073

CPC分类号： G01R1/0735

摘要： A probe apparatus has a quartz probe formed of a quartz probe body and a metallic pattern layer formed thereon, the quartz probe body including a plurality of probe portions having a large number of probes corresponding to an electrode array of an object of examination, lead pattern portions continuous individually with the probe portions, and a supporting portion supporting all the lead pattern portions, the quartz probe body being designed so that the longitudinal direction of each probe is inclined with respect to a crystal axis X or Y of a quartz plate by etching a Z plane of the quartz plate perpendicular to a crystal axis Z of the quartz plate, and a tester fitted with the quartz probe by means of an adapter.

摘要翻译： 探针装置具有由石英探针体和形成在其上的金属图案层形成的石英探针，所述石英探针体包括多个探针部分，所述探针部分具有与检查对象的电极阵列对应的大量探针，引线图案 分别与探针部分连续的部分，以及支撑所有引线图案部分的支撑部分，石英探针体被设计成使得每个探针的纵向方向相对于石英板的晶轴X或Y倾斜，通过蚀刻 与石英板的晶轴Z垂直的石英板的Z平面，以及通过适配器装配石英探针的测试仪。

公开(公告)号：US08143557B2

公开(公告)日：2012-03-27

申请号：US12279953

申请日：2007-02-07

申请人： Kazuo Shibata ,  Hiroo Kawasaki ,  Teruo Iwata ,  Manabu Amikura

发明人： Kazuo Shibata ,  Hiroo Kawasaki ,  Teruo Iwata ,  Manabu Amikura

IPC分类号： H05B3/68

CPC分类号： H05B3/145 ,  H01L21/67103 ,  H05B3/143 ,  H05B3/283 ,  H05B2203/002 ,  H05B2203/003 ,  H05B2203/014 ,  H05B2203/016 ,  H05B2203/037

摘要： To provide a plane heater, including a carbon wire heating element CW, in which surface arrangement density of the heating element CW in an outer area is denser than that in an inner area. A power supply terminal unit having connection wires for supplying electricity to the heating element CW is arranged in the center on the back side of a silica glass plate-like member 2. Connection wires 4a and 4b connected with the heating element CW in the inner area are connected with the heating element in the inner area in the center of the silica glass plate-like member. Connection wires 3a and 3b connected with the heating element in the outer area are extended from the center of the silica glass plate-like member toward the outer area and connected with the heating element CW in the outer area, without intersecting the heating element CW in the inner area.

摘要翻译： 提供包括碳线加热元件CW的平面加热器，其中外部区域中的加热元件CW的表面布置密度比内部区域中的表面布置密度更密。 具有用于向加热元件CW供电的连接线的电源端子单元布置在石英玻璃板状构件2的背面的中心。连接线4a和4b与加热元件CW连接在内部区域 与石英玻璃板状构件的中心的内部区域中的加热元件连接。 与外部区域中的加热元件连接的连接线3a和3b从石英玻璃板状构件的中心向外部区域延伸，并且与外部区域中的加热元件CW连接，而不与加热元件CW相交 内部区域。

公开(公告)号：US07931749B2

公开(公告)日：2011-04-26

申请号：US10574531

申请日：2004-10-22

申请人： Manabu Amikura ,  Teruo Iwata

发明人： Manabu Amikura ,  Teruo Iwata

IPC分类号： C23C10/00 ,  C23C16/455

CPC分类号： C23C16/45565

摘要： The present invention relates to a showerhead that supplies a source gas and a supporting gas for depositing a film into a processing vessel of a film deposition apparatus. The showerhead includes a body which is provided with a gas jetting surface (8). In the showerhead body, there are defined a first diffusion chamber (60) that receives the source gas and diffuses the same, and a second diffusion chamber (62) that receives the supporting gas and diffuses the same. The gas jetting surface has source-gas jetting orifices (10A) that are in communication with the first diffusion chamber, and first supporting-gas jetting orifices (10B) that are in communication with the second diffusion chamber. Each of the first supporting-gas jetting orifices (10B) are formed into a ring shape that adjacently surrounds a corresponding one of the source-gas jetting orifices (10A).

摘要翻译： 本发明涉及一种将源气体和用于将膜沉积的支撑气体供应到成膜装置的处理容器中的喷头。 喷头包括设置有气体喷射表面（8）的主体。 在喷头体中，限定了接收源气体并使其扩散的第一扩散室（60）和容纳支持气体并使其扩散的第二扩散室（62）。 气体喷射表面具有与第一扩散室连通的源气喷射孔（10A）和与第二扩散室连通的第一支撑气体喷射孔（10B）。 每个第一支持气体喷射孔（10B）形成为相邻地围绕相应的一个源气体喷射孔（10A）的环形。

公开(公告)号：US07238238B2

公开(公告)日：2007-07-03

申请号：US10892456

申请日：2004-07-16

申请人： Teruo Iwata

发明人： Teruo Iwata

IPC分类号： C23C16/00 ,  G01N7/00

CPC分类号： C23C16/52 ,  C23C16/4481

摘要： A deposition apparatus supplies a reactive gas obtained by vaporizing a liquid material at a vaporizer 30 into a chamber 10 via a processing-gas pipe 40 and forms a thin film on a semiconductor wafer W due to a thermal decomposition of the reactive gas. The deposition apparatus is provided, in the processing-gas pipe 40, with a crystal gauge 51 detecting a pressure Pq under the influence of mist in the reactive gas and a capacitance manometer 52 detecting a pressure Pg under no influence of the mist. The apparatus further includes a gasification monitor 50 detecting a quantity of mist in the reactive gas on the basis of a difference ΔP between the pressure Pq and the pressure Pg measured by the crystal gauge 51 and the capacitance manometer 52 in order to prevent deposition defects due to the mist in the reactive gas.

摘要翻译： 沉积设备通过经由加工气体管40将蒸发器30中的液体材料蒸发而获得的反应性气体，由于反应气体的热分解而在半导体晶片W上形成薄膜。 在处理气体配管40中，在反应气体的雾的影响下检测压力Pq的晶体计51，以及在不影响雾的状态下检测压力Pg的电容式压力计52的沉积装置。 该装置还包括气化监测器50，其基于由晶体计51和电容压力计52测量的压力Pq和压力Pg之间的差ΔP来检测反应气体中的雾量，以便防止由于 到反应气体中的雾。

公开(公告)号：US06669784B2

公开(公告)日：2003-12-30

申请号：US10060171

申请日：2002-02-01

申请人： Munehisa Futamura ,  Teruo Iwata

发明人： Munehisa Futamura ,  Teruo Iwata

IPC分类号： C23C1600

CPC分类号： H01L21/67103 ,  C23C16/4586

摘要： A resistance heating element 33 for heating a wafer W is embedded within a ceramic heater 22 that forms a susceptor for a semiconductor wafer W to be processed, and power lines 35 from the resistance heating element 33 extend out of the processing chamber 20. A sheathing bellows 38 that houses the power lines 35 in an insulated state is interposed between the ceramic heater 22 and a base plate 24 of the processing chamber 20, and an end piece 39 of the sheathing bellows 38 is connected by screws 40 to the ceramic heater 22 to provide a space 50 therebetween. The screws 40 are such as to permit the thermal expansion of the sheathing bellows 38. This configuration makes it possible to make the temperature distribution in the surface of the semiconductor wafer uniform and thus improve the uniformity of film formation, and also prevent corrosion of components such as the power lines and terminals, and suppress the generation of particles.

公开(公告)号：US5879139A

公开(公告)日：1999-03-09

申请号：US672363

申请日：1996-06-28

申请人： Kazuichi Hayashi ,  Teruo Iwata

发明人： Kazuichi Hayashi ,  Teruo Iwata

IPC分类号： H01L21/302 ,  F04B37/06 ,  F04C29/00 ,  F04D19/04 ,  F04D29/58 ,  H01L21/205 ,  H01L21/3065 ,  F04B39/06

CPC分类号： F04D19/04 ,  F04B37/06 ,  F04C29/0092 ,  F04D29/584

摘要： The inside of a vacuum pump is heated by means of a first heating unit to a temperature higher than the temperature at which products of reaction discharged from a process chamber are separated, and the inner surface of an exhaust pipe is heated to a temperature higher than the separation temperature by means of a second heating unit. If a vacuum process is carried out in the process chamber in this state, exhaust gas discharged from the process chamber can pass in a gaseous phase through the exhaust pipe and the vacuum pump without separating its unwanted by-products.

摘要翻译： 真空泵的内部通过第一加热单元被加热到高于从处理室排出的反应产物分离的温度的温度，并且排气管的内表面被加热到高于 分离温度借助于第二加热单元。 如果在该状态下在处理室中进行真空处理，则从处理室排出的废气可以通过排气管和真空泵通过气相，而不分离其不需要的副产物。

公开(公告)号：US5783492A

公开(公告)日：1998-07-21

申请号：US399939

申请日：1995-03-03

申请人： Kimihiro Higuchi ,  Chishio Koshimizu ,  Ryoichiro Koshi ,  Teruo Iwata ,  Nobuo Ishii

发明人： Kimihiro Higuchi ,  Chishio Koshimizu ,  Ryoichiro Koshi ,  Teruo Iwata ,  Nobuo Ishii

IPC分类号： C23C16/02 ,  C23C16/507 ,  C23C16/54 ,  H01L21/00 ,  H01H1/00

CPC分类号： H01L21/67069 ,  C23C16/0245 ,  C23C16/507 ,  C23C16/54

摘要： A plasma processing method of performing plasma processing such as plasma film formation processing on a target object arranged in a processing vessel is disclosed. This method includes the first step of introducing an inert gas into the processing vessel, the second step of generating a plasma of the inert gas in the processing vessel, the third step of introducing a processing gas for processing the target object into the processing vessel, and the fourth step of generating a plasma of the processing gas in the processing vessel to process the target object.

摘要翻译： 公开了一种等离子体处理方法，其对配置在处理容器中的目标物体进行等离子体处理，例如等离子体成膜处理。 该方法包括将惰性气体引入处理容器的第一步骤，在处理容器中产生惰性气体等离子体的第二步骤，将处理对象物的处理气体引入处理容器的第三步骤， 以及在处理容器中产生处理气体的等离子体以处理目标物体的第四步骤。