公开(公告)号：US5240556A

公开(公告)日：1993-08-31

申请号：US893018

申请日：1992-06-03

申请人： Yoshio Ishikawa ,  Junichi Arami ,  Towl Ikeda ,  Teruo Iwata

发明人： Yoshio Ishikawa ,  Junichi Arami ,  Towl Ikeda ,  Teruo Iwata

IPC分类号： C23C16/54 ,  H01L21/00

CPC分类号： H01L21/67207 ,  C23C16/54 ,  H01L21/67069 ,  H01L21/67115

摘要： According to this invention, a surface-treating apparatus capable of etching an object to be treated with high accuracy, suppressing discharging of a harmful gas deposited on the etched object in the air, and preventing the surface of the object from deposition/ attachment of reaction products and droplets is disclosed. The surface-treating apparatus includes a first process chamber for etching a loaded object to be treated by an activated etching gas, an exhausting member for setting the first process chamber at a low pressure, a cooling means for cooling the object loaded in the first process chamber, a second process chamber in which the object etched by the first process chamber is loaded, an exhausting member for setting the second process chamber at a low pressure, and an heating member for annealing the object loaded in the second process chamber.

摘要翻译： 根据本发明，能够高精度地蚀刻被处理物的表面处理装置，抑制在空气中沉积在被蚀刻物上的有害气体的排出，防止物体的表面沉积/附着反应 产品和液滴被公开。 表面处理装置包括用于蚀刻被激活的蚀刻气体处理的被加载物体的第一处理室，用于将第一处理室设置在低压的排出构件，用于冷却在第一处理中加载的物体的冷却装置 第二处理室，其中装载有由第一处理室蚀刻的物体，用于将第二处理室设置在低压的排气构件，以及用于对装载在第二处理室中的物体进行退火的加热构件。

公开(公告)号：US5455082A

公开(公告)日：1995-10-03

申请号：US187723

申请日：1994-01-28

申请人： Masasi Saito ,  Teruo Iwata ,  Nobuo Ishii ,  Towl Ikeda ,  Hiroaki Saeki

发明人： Masasi Saito ,  Teruo Iwata ,  Nobuo Ishii ,  Towl Ikeda ,  Hiroaki Saeki

IPC分类号： C23C14/56 ,  H01L21/00 ,  B05D3/06 ,  C23C16/00

CPC分类号： H01L21/67213 ,  C23C14/566 ,  H01L21/67115 ,  H01L21/67126 ,  H01L21/67173 ,  H01L21/67201 ,  H01L21/67276

摘要： A reduced pressure processing system includes a load lock chamber having an opening communicating with a process atmosphere in which a wafer is processed and/or the outer air atmosphere, a gate valve which is arranged at the opening to close/open the chamber with respect to the process atmosphere and/or the outer air atmosphere, a robot for loading/unloading the wafer into/from the chamber, an evacuation pump for evacuating the chamber, a heater for heating the wall of the chamber, and a controller for controlling the gate valve, the robot, the evacuation pump, and the heater.

摘要翻译： 减压处理系统包括：负载锁定室，具有与处理晶片进行处理的处理气氛和/或外部空气气氛连通的开口;闸阀，其布置在开口处，以关闭/打开室 处理气氛和/或外部空气气氛，用于将晶片装入/从室中卸载的机器人，用于抽空室的抽空泵，用于加热室壁的加热器，以及用于控制门的控制器 阀门，机器人，排气泵和加热器。

公开(公告)号：US5314541A

公开(公告)日：1994-05-24

申请号：US889378

申请日：1992-05-28

申请人： Masasi Saito ,  Teruo Iwata ,  Nobuo Ishii ,  Towl Ikeda ,  Hiroaki Saeki

发明人： Masasi Saito ,  Teruo Iwata ,  Nobuo Ishii ,  Towl Ikeda ,  Hiroaki Saeki

IPC分类号： C23C14/56 ,  H01L21/00 ,  C23C16/00

CPC分类号： H01L21/67213 ,  C23C14/566 ,  H01L21/67115 ,  H01L21/67126 ,  H01L21/67173 ,  H01L21/67201 ,  H01L21/67276

摘要： A reduced pressure processing system includes a load lock chamber having an opening communicating with a process atmosphere in which a wafer is processed and/or the outer air atmosphere, a gate valve which is arranged at the opening to close/open the chamber with respect to the process atmosphere and/or the outer air atmosphere, a robot for loading/unloading the wafer into/from the chamber, an evacuation pump for evacuating the chamber, a heater for heating the wall of the chamber, and a controller for controlling the gate valve, the robot, the evacuation pump, and the heater.

摘要翻译： 减压处理系统包括：负载锁定室，具有与处理晶片进行处理的处理气氛和/或外部空气气氛连通的开口;闸阀，其布置在开口处，以关闭/打开室 处理气氛和/或外部空气气氛，用于将晶片装入/从室中卸载的机器人，用于抽空室的抽空泵，用于加热室壁的加热器和用于控制门的控制器 阀门，机器人，排气泵和加热器。

公开(公告)号：US5433780A

公开(公告)日：1995-07-18

申请号：US154563

申请日：1993-11-19

申请人： Towl Ikeda ,  Teruo Iwata

发明人： Towl Ikeda ,  Teruo Iwata

IPC分类号： C23C14/56 ,  C23C16/44 ,  H01L21/00 ,  H01L21/677 ,  C23C16/00 ,  C23C14/00

CPC分类号： H01L21/67739 ,  C23C14/564 ,  C23C16/4412 ,  H01L21/67017

摘要： A vacuum processing apparatus comprises a vacuum processing chamber for subjecting an object to be processed to a predetermined vacuum processing, an auxiliary vacuum chamber whose internal pressure is variable repeatedly between an atmospheric pressure and a process pressure, when the object is put in and taken out of the vacuum processing chamber, and exhaust system for exhausting a gas from the auxiliary vacuum chamber. The exhaust system has at least one exhaust port located apart from an internal wall surface of the auxiliary vacuum chamber.

摘要翻译： 真空处理装置包括：真空处理室，用于对待处理的物体进行预定的真空处理;辅助真空室，其内部压力在大气压和过程压力之间反复变化，当物体被放入和取出时 的真空处理室，以及用于从辅助真空室排出气体的排气系统。 排气系统具有至少一个与辅助真空室的内壁表面分开的排气口。

公开(公告)号：US5426865A

公开(公告)日：1995-06-27

申请号：US115550

申请日：1993-09-03

申请人： Towl Ikeda ,  Teruo Iwata

发明人： Towl Ikeda ,  Teruo Iwata

IPC分类号： C23C14/56 ,  H01L21/00

CPC分类号： H01L21/67017 ,  C23C14/56 ,  C23C14/566 ,  H01L21/67109

摘要： A vacuum creating method comprising preparing a chamber for forming a space which can be made so atmospheric and vacuous as to allow a substrate to be directly or indirectly carried in and out of the space, exhausting the chamber, filling the space in the chamber with a CO.sub.2 gas whose vapor pressure becomes larger than 1 atm at ambient temperature but smaller than 10 Torr at a temperature lower than the ambient temperature, carrying the substrate into the chamber, cooling the CO.sub.2 gas to solidify, thereby making an internal pressure in the chamber highly vacuous, carrying the substrate out of the chamber, and heating the solidified dry ice to vaporize thereby returning the internal pressure in the chamber to atmospheric pressure.

摘要翻译： 一种真空产生方法，包括制备用于形成空间的室，其可以被制成如此大气和真空，从而允许衬底被直接或间接地携带在空间中，排出空间，排出腔室，用空气填充室中的空间 CO 2气体在环境温度下变得大于1atm，在低于环境温度的温度下小于10Torr，将衬底携带到室中，冷却CO 2气体以固化，从而使室内的内部压力高 真空，将基底带出室，并加热固化的干冰蒸发，从而将室内的内压返回至大气压。

公开(公告)号：US5198755A

公开(公告)日：1993-03-30

申请号：US753078

申请日：1991-08-30

申请人： Towl Ikeda ,  Teruo Iwata ,  Issei Imahashi

发明人： Towl Ikeda ,  Teruo Iwata ,  Issei Imahashi

IPC分类号： G01R1/073

CPC分类号： G01R1/0735

摘要： A probe apparatus has a quartz probe formed of a quartz probe body and a metallic pattern layer formed thereon, the quartz probe body including a plurality of probe portions having a large number of probes corresponding to an electrode array of an object of examination, lead pattern portions continuous individually with the probe portions, and a supporting portion supporting all the lead pattern portions, the quartz probe body being designed so that the longitudinal direction of each probe is inclined with respect to a crystal axis X or Y of a quartz plate by etching a Z plane of the quartz plate perpendicular to a crystal axis Z of the quartz plate, and a tester fitted with the quartz probe by means of an adapter.

摘要翻译： 探针装置具有由石英探针体和形成在其上的金属图案层形成的石英探针，所述石英探针体包括多个探针部分，所述探针部分具有与检查对象的电极阵列对应的大量探针，引线图案 分别与探针部分连续的部分，以及支撑所有引线图案部分的支撑部分，石英探针体被设计成使得每个探针的纵向方向相对于石英板的晶轴X或Y倾斜，通过蚀刻 与石英板的晶轴Z垂直的石英板的Z平面，以及通过适配器装配石英探针的测试仪。

公开(公告)号：US20100224620A1

公开(公告)日：2010-09-09

申请号：US12279953

申请日：2007-02-07

申请人： Kazuo Shibata ,  Hiroo Kawasaki ,  Teruo Iwata ,  Manabu Amikura

发明人： Kazuo Shibata ,  Hiroo Kawasaki ,  Teruo Iwata ,  Manabu Amikura

IPC分类号： H05B3/68

CPC分类号： H05B3/145 ,  H01L21/67103 ,  H05B3/143 ,  H05B3/283 ,  H05B2203/002 ,  H05B2203/003 ,  H05B2203/014 ,  H05B2203/016 ,  H05B2203/037

摘要： [Problem to be Solved] To provide a plane heater including a carbon wire heating element which has an arrangement pattern allowing a heating surface to be a substantially uniform heating temperature plane.[Means to Solve Problem] Surface arrangement densities of a carbon wire heating element CW are different in an inner area and an outer area located in the periphery. The surface arrangement density in the above-mentioned outer area is denser than the surface arrangement density in the inner area. A power supply terminal unit 8 having connection wires for supplying electricity to the above-mentioned heating element CW is arranged in the center on the back side of the above-mentioned silica glass plate-like member 2. The connection wires 4a and 4b connected with the carbon wire heating element in the above-mentioned inner area are connected with the carbon wire heating element CW in the inner area in the center of the above-mentioned silica glass plate-like member. The connection wires 3a and 3b connected with the carbon wire heating element in the above-mentioned outer area are extended from the center of the above-mentioned silica glass plate-like member toward the outer area, and are connected with the carbon wire heating element CW in the outer area, without intersecting the carbon wire heating element CW in the above-mentioned inner area.

摘要翻译： [待解决的问题]提供一种具有碳线加热元件的平面加热器，其具有允许加热表面为基本上均匀的加热温度平面的布置图案。 解决问题的手段碳丝加热元件CW的表面排列密度在内部区域和位于周边的外部区域不同。 上述外部区域中的表面排列密度比内部区域中的表面排列密度更致密。 具有用于向上述加热元件CW供电的连接线的电源端子单元8布置在上述石英玻璃板状构件2的背面的中心。连接线4a和4b与 上述内部区域中的碳丝加热元件与上述石英玻璃板状构件的中心的内部区域中的碳线加热元件CW连接。 与上述外部区域中的碳丝加热元件连接的连接线3a和3b从上述石英玻璃板状构件的中心向外部区域延伸，并与碳线加热元件 CW在外部区域中，而不与上述内部区域中的碳线加热元件CW相交。

公开(公告)号：US20070212485A1

公开(公告)日：2007-09-13

申请号：US11797740

申请日：2007-05-07

申请人： Teruo Iwata

发明人： Teruo Iwata

IPC分类号： C23C16/52

CPC分类号： C23C16/52 ,  C23C16/4481

摘要： A deposition apparatus supplies a reactive gas obtained by vaporizing a liquid material at a vaporizer 30 into a chamber 10 via a processing-gas pipe 40 and forms a thin film on a semiconductor wafer W due to a thermal decomposition of the reactive gas. The deposition apparatus is provided, in the processing-gas pipe 40, with a crystal gauge 51 detecting a pressure Pq under the influence of mist in the reactive gas and a capacitance manometer 52 detecting a pressure Pg under no influence of the mist. The apparatus further includes a gasification monitor 50 detecting a quantity of mist in the reactive gas on the basis of a difference ΔP between the pressure Pq and the pressure Pg measured by the crystal gauge 51 and the capacitance manometer 52 in order to prevent deposition defects due to the mist in the reactive gas.

公开(公告)号：US20060280868A1

公开(公告)日：2006-12-14

申请号：US11452247

申请日：2006-06-14

申请人： Yoshitake Kato ,  Teruo Iwata

发明人： Yoshitake Kato ,  Teruo Iwata

IPC分类号： C23C16/00 ,  G06F19/00 ,  B05C11/00

CPC分类号： C23C16/4404 ,  C23C16/52

摘要： A method for treating a vapor deposition apparatus, a method for depositing a thin film, a vapor deposition apparatus and a computer program product are disclosed for providing a reduced cleaning frequency. Accumulated material is deposited on an interior wall of a chamber of a vapor deposition unit during deposition of a thin film. While the deposition of the thin film is repeated, a gas is emitted from the accumulated material to deteriorate an uniformity in the film thickness of the thin film. The method involves depositing an amorphous film to cover the accumulated material before any influence of the accumulated material deposited on the interior wall of the chamber on the thickness of the thin film is evident. Gas emission from the accumulated material can be prevented by covering the accumulated material with the amorphous film. This configuration provides a thin film having an improved uniformity of thickness.

摘要翻译： 公开了一种用于处理蒸镀装置的方法，沉积薄膜的方法，蒸镀装置和计算机程序产品，用于提供降低的清洗频率。 在沉积薄膜期间，积聚的材料沉积在气相沉积单元的室的内壁上。 当重复沉积薄膜时，从积聚的材料发出气体，从而使薄膜的膜厚均匀化。 在沉积在室内壁上的累积材料对薄膜厚度的任何影响是明显的之前，该方法包括沉积非晶膜以覆盖积聚的材料。 可以通过用非晶膜覆盖积累的材料来防止来自积聚的材料的气体排放。 这种构造提供了具有改善的厚度均匀性的薄膜。

公开(公告)号：US5382311A

公开(公告)日：1995-01-17

申请号：US168367

申请日：1993-12-17

申请人： Kenji Ishikawa ,  Mitsuaki Komino ,  Tadashi Mitui ,  Teruo Iwata ,  Izumi Arai ,  Yoshifumi Tahara

发明人： Kenji Ishikawa ,  Mitsuaki Komino ,  Tadashi Mitui ,  Teruo Iwata ,  Izumi Arai ,  Yoshifumi Tahara

IPC分类号： C23C16/458 ,  H01L21/683 ,  H01L21/00

CPC分类号： C23C16/466 ,  C23C16/4586 ,  H01L21/6831

摘要： A plasma etching apparatus for a semiconductor wafer includes a susceptor arranged in a vacuum process chamber. A groove for flowing a heat transfer gas is formed in the mounting surface of the susceptor. The groove includes an annular groove portion formed along the peripheral edge of the mounting surface, and a gas path vertically extending through the susceptor is connected to the annular groove portion. A sheet-like electrostatic chuck is airtightly adhered to the mounting surface of the susceptor to cover the groove. A plurality of through holes are formed in the electrostatic chuck, and these holes are arranged along an above the groove. The heat transfer gas is supplied between the electrostatic chuck and the semiconductor wafer through the gas path, the groove, and the through holes. The heat transfer gas contributes to transfer of cold from a liquid nitrogen source arranged under the susceptor to the wafer.

摘要翻译： 用于半导体晶片的等离子体蚀刻装置包括设置在真空处理室中的基座。 在基座的安装面形成有用于使传热气体流动的槽。 该槽包括沿着安装表面的周边边缘形成的环形槽部分，并且垂直延伸穿过基座的气体路径连接到环形槽部分。 片状静电卡盘气密地粘附在基座的安装面上以覆盖凹槽。 在静电卡盘中形成有多个通孔，这些孔沿着槽的上方配置。 传热气体通过气路，凹槽和通孔供应在静电卡盘和半导体晶片之间。 传热气体有助于从布置在基座下方的液氮源将冷转移到晶片。