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1.发明授权Plasma processing method, plasma processing apparatus, and plasma generating apparatus 失效等离子体处理方法，等离子体处理装置和等离子体生成装置
公开(公告)号：US5783492A
公开(公告)日：1998-07-21
申请号：US399939
申请日：1995-03-03
IPC分类号： C23C16/02 , C23C16/507 , C23C16/54 , H01L21/00 , H01H1/00
CPC分类号： H01L21/67069 , C23C16/0245 , C23C16/507 , C23C16/54
摘要： A plasma processing method of performing plasma processing such as plasma film formation processing on a target object arranged in a processing vessel is disclosed. This method includes the first step of introducing an inert gas into the processing vessel, the second step of generating a plasma of the inert gas in the processing vessel, the third step of introducing a processing gas for processing the target object into the processing vessel, and the fourth step of generating a plasma of the processing gas in the processing vessel to process the target object.
摘要翻译： 公开了一种等离子体处理方法，其对配置在处理容器中的目标物体进行等离子体处理，例如等离子体成膜处理。 该方法包括将惰性气体引入处理容器的第一步骤，在处理容器中产生惰性气体等离子体的第二步骤，将处理对象物的处理气体引入处理容器的第三步骤， 以及在处理容器中产生处理气体的等离子体以处理目标物体的第四步骤。
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公开(公告)号：US06676804B1
公开(公告)日：2004-01-13
申请号：US09720910
申请日：2001-01-02
IPC分类号： H05H100
CPC分类号： H01L21/6831 , H01J37/32623 , H01J37/32642 , H01J2237/2001 , H01L21/67248 , Y10S156/915
摘要： An electrostatic chuck 108 is provided on a lower electrode 106 provided inside a processing chamber 102 of an etching apparatus 100, and a conductive inner ring body 112a and an insulating outer ring body 112b are encompassing the outer edges of a wafer W mounted on the chuck surface. The temperatures of the wafer W and the inner and outer ring bodies 112a and 112b are detected by first˜third temperature sensors 142, 144 and 146. A controller 140 controls the pressure levels of He supplied to the space between the center of the wafer W and the electrostatic chuck 108 via first gas outlet ducts 114 and to the space between the outer edges of the wafer W and the electrostatic chuck 108 via second gas outlet ducts 116 and the quantity of heat generated by a heater 148 inside the outer ring body 112b based upon the information on the temperatures thus detected so that the temperatures of the wafer W and the inner ring body 112a are set roughly equal to each other.
摘要翻译： 静电吸盘108设置在设置在蚀刻装置100的处理室102内的下电极106上，并且导电内环体112a和绝缘外环体112b包围安装在卡盘上的晶片W的外边缘 表面。 晶片W和内外环体112a和112b的温度由第一至第三温度传感器142,144和146检测。控制器140控制供应给晶片W的中心之间的空间的He的压力水平 以及静电卡盘108经由第一气体出口管道114以及经由第二气体出口管道116和晶片W的外边缘与静电卡盘108之间的空间以及外环体112b内的加热器148产生的热量 基于如此检测的温度的信息，使得晶片W和内环体112a的温度大致相等。
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公开(公告)号：US07335278B2
公开(公告)日：2008-02-26
申请号：US10675966
申请日：2003-10-02
CPC分类号： H01L21/6831 , H01J37/32623 , H01J37/32642 , H01J2237/2001 , H01L21/67248 , Y10S156/915
摘要： An electrostatic chuck 108 is provided on a lower electrode 106 provided inside a processing chamber 102 of an etching apparatus 100, and a conductive inner ring body 112a and an insulating outer ring body 112b are encompassing the outer edges of a wafer W mounted on the chuck surface. The temperatures of the wafer W and the inner and outer ring bodies 112a and 112b are detected by first˜third temperature sensors 142, 144 and 146. A controller 140 controls the pressure levels of He supplied to the space between the center of the wafer W and the electrostatic chuck 108 via first gas outlet ducts 114 and to the space between the outer edges of the wafer W and the electrostatic chuck 108 via second gas outlet ducts 116 and the quantity of heat generated by a heater 148 inside the outer ring body 112b based upon the information on the temperatures thus detected so that the temperatures of the wafer W and the inner ring body 112a are set roughly equal to each other.
摘要翻译： 静电吸盘108设置在设置在蚀刻装置100的处理室102内部的下部电极106上，并且导电内圈主体112a和绝缘外圈主体112b围绕安装在晶片W的外边缘 卡盘表面。 晶片W和内外环体112a和112b的温度由第一至第三温度传感器142,144和146检测。控制器140控制供应给第一至第三温度传感器142,144和146的中心之间的空间的He的压力水平 晶片W和静电卡盘108经由第一气体出口管114以及经由第二气体出口管道116与晶片W的外边缘和静电卡盘108之间的空间以及由外部环内的加热器148产生的热量 基于关于如此检测的温度的信息，使得晶片W和内环体112a的温度大致相等。
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公开(公告)号：US20050172904A1
公开(公告)日：2005-08-11
申请号：US10675966
申请日：2003-10-02
IPC分类号： H05H1/46 , C23C16/00 , C23F4/00 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/68 , H01L21/683 , H05H1/00
CPC分类号： H01L21/6831 , H01J37/32623 , H01J37/32642 , H01J2237/2001 , H01L21/67248 , Y10S156/915
摘要： An electrostatic chuck 108 is provided on a lower electrode 106 provided inside a processing chamber 102 of an etching apparatus 100, and a conductive inner ring body 112a and an insulating outer ring body 112b are encompassing the outer edges of a wafer W mounted on the chuck surface. The temperatures of the wafer W and the inner and outer ring bodies 112a and 112b are detected by first third temperature sensors 142, 144 and 146. A controller 140 controls the pressure levels of He supplied to the space between the center of the wafer W and the electrostatic chuck 108 via first gas outlet ducts 114 and to the space between the outer edges of the wafer W and the electrostatic chuck 108 via second gas outlet ducts 116 and the quantity of heat generated by a heater 148 inside the outer ring body 112b based upon the information on the temperatures thus detected so that the temperatures of the wafer W and the inner ring body 112a are set roughly equal to each other.
摘要翻译： 静电吸盘108设置在设置在蚀刻装置100的处理室102内部的下部电极106上，并且导电内圈主体112a和绝缘外圈主体112b围绕安装在晶片W的外边缘 卡盘表面。 晶片W和内外环体112a和112b的温度由第一第三温度传感器142,144和146检测。控制器140控制供应给晶片中心之间的空间的He的压力水平 W和静电卡盘108经由第一气体出口管114以及经由第二气体出口管道116到晶片W的外边缘和静电卡盘108之间的空间以及由外部环体内的加热器148产生的热量 112b基于如此检测的温度的信息，使得晶片W和内环体112a的温度大致相等。
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公开(公告)号：US5980767A
公开(公告)日：1999-11-09
申请号：US899864
申请日：1997-07-24
IPC分类号： G01N21/68 , H01L21/302
CPC分类号： G01N21/68 , B81C1/00587 , B81C99/0065 , H01J37/32963 , H01J37/3299 , B81C2201/0142
摘要： Disclosed herein is a method of detecting an end point of plasma process performed on an object, and a plasma process apparatus. The method includes the steps of detecting an emission spectrum over a wavelength region specific to C.sub.2 in the plasma, by optical detecting means, and determining the end point of the plasma process from the emission intensity of the emission spectrum detected by the optical detector. The apparatus has a process chamber, a pair of electrodes, a light-collecting device, an optical detector, and a determining device. The chamber has a monitor window. The electrodes are located in the process chamber. The first electrode is used to support the object. A high-frequency power is supplied between the electrodes to change a process gas into plasma. The light-collecting device collects the light from the plasma through the monitor window. The optical detector detects an emission spectrum from the light collected. The determining device determines the end point of the plasma process from the emission intensity of the emission spectrum detected. The monitor window is secured to the distal end of a cylindrical member protruding from the chamber. The member has a narrow gas passage for trapping a gas generated by the plasma process.
摘要翻译： 本文公开了一种检测对物体进行的等离子体处理的终点的方法和等离子体处理装置。 该方法包括以下步骤：通过光学检测装置检测等离子体中C2特有的波长区域上的发射光谱，并根据由光学检测器检测到的发射光谱的发射强度来确定等离子体处理的终点。 该装置具有处理室，一对电极，光收集装置，光学检测器和确定装置。 该房间有一个监视器窗口。 电极位于处理室中。 第一个电极用于支撑物体。 在电极之间提供高频电力以将处理气体改变为等离子体。 集光装置通过监视窗收集来自等离子体的光。 光学检测器从所收集的光线检测发射光谱。 确定装置根据检测到的发射光谱的发射强度确定等离子体处理的终点。 监视器窗口固定到从腔室突出的圆柱形构件的远端。 该构件具有用于捕获由等离子体工艺产生的气体的窄气体通道。
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公开(公告)号：US07416330B2
公开(公告)日：2008-08-26
申请号：US11196402
申请日：2005-08-04
申请人： Masafumi Ito , Yasuyuki Okamura , Tatsuo Shiina , Nobuo Ishii , Tomohiro Suzuki , Chishio Koshimizu
发明人： Masafumi Ito , Yasuyuki Okamura , Tatsuo Shiina , Nobuo Ishii , Tomohiro Suzuki , Chishio Koshimizu
CPC分类号： G01J5/0003 , G01K11/12
摘要： The temperature of the surface and/or inside of a substrate is measured by irradiating the front surface or rear surface of the substrate, whose temperature is to be measured, with light and measuring the interference of a reflected light from the substrate and a reference light. A method and apparatus for measuring temperature or thickness which is suitable for directly measuring the temperature of the outermost surface layer of a substrate, and an apparatus for treating a substrate for an electronic device, which uses such method, are provided.
摘要翻译： 基板的表面和/或内部的温度通过用光照射待测温度的基板的前表面或后表面并测量来自基板的反射光的干涉和参考光来测量 。 提供了一种用于测量温度或厚度的方法和装置，其适用于直接测量基板的最外表面层的温度，以及使用这种方法的用于处理电子设备的基板的设备。
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公开(公告)号：US5571366A
公开(公告)日：1996-11-05
申请号：US327798
申请日：1994-10-20
申请人： Nobuo Ishii , Jiro Hata , Chishio Koshimizu , Yoshifumi Tahara , Hiroshi Nishikawa , Isei Imahashi
发明人： Nobuo Ishii , Jiro Hata , Chishio Koshimizu , Yoshifumi Tahara , Hiroshi Nishikawa , Isei Imahashi
CPC分类号： H01J37/32082 , H01J37/32091 , H01J37/321 , H01J37/32174 , H01J37/32935 , H01J37/32963 , H01J37/3299 , H01J2237/334 , H01J2237/3343
摘要： A plasma processing apparatus includes a chamber having a gas inlet port and a gas discharge port, a rest table, arranged in the chamber, for supporting a wafer which has a surface to be processed, a radio frequency antenna for supplying a radio frequency energy into the chamber, and generating an induced plasma in the chamber, and a radio frequency voltage source for applying a radio frequency voltage to the radio frequency antenna. A pressure and/or light variation in the chamber is measured during generation of the plasma, by a measurement system, and the radio frequency voltage source is controlled based on a signal from the measurement system, so that voltage to be applied to the antenna is controlled according to the pressure and/or light in the chamber.
摘要翻译： 一种等离子体处理装置，包括具有气体入口和气体排出口的室，设置在室内的用于支撑具有待处理表面的晶片的静止台，用于将射频能量供给的射频天线 并且在腔室中产生感应等离子体，以及用于向射频天线施加射频电压的射频电压源。 通过测量系统在等离子体的产生期间测量室中的压力和/或光的变化，并且基于来自测量系统的信号来控制射频电压源，使得施加到天线的电压为 根据腔室内的压力和/或光线进行控制。
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公开(公告)号：US20090051924A1
公开(公告)日：2009-02-26
申请号：US12185888
申请日：2008-08-05
申请人： Masafumi ITO , Yasuyuki Okamura , Tatsuo Shiina , Nobuo Ishii , Tomohiro Suzuki , Chishio Koshimizu
发明人： Masafumi ITO , Yasuyuki Okamura , Tatsuo Shiina , Nobuo Ishii , Tomohiro Suzuki , Chishio Koshimizu
IPC分类号： G01B11/06
CPC分类号： G01J5/0003 , G01K11/12
摘要： An apparatus for measuring thickness is provided. A light source irradiates a front surface or a rear surface of a substrate with a light. A splitter splits the light into a reference light and a measurement light. The reference light is reflected by a reference light reflecting device. An optical path changing device changes an optical path length of light reflected from the reference light reflecting device. A light receiving device measures an interference of the reflected light from the substrate and the reference light from the reference light reflecting device. A thickness of at least one of the front surface, rear surface or inside of the substrate is measured based on a measurement of the interference.
摘要翻译： 提供了一种测量厚度的装置。 光源用光照射基板的前表面或后表面。 分流器将光分成参考光和测量光。 参考光被参考光反射装置反射。 光路改变装置改变从参考光反射装置反射的光的光路长度。 光接收装置测量来自基板的反射光和来自参考光反射装置的基准光的干涉。 基于干涉的测量来测量衬底的前表面，后表面或内部中的至少一个的厚度。
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公开(公告)号：US20050271116A1
公开(公告)日：2005-12-08
申请号：US11196402
申请日：2005-08-04
申请人： Masafumi Ito , Yasuyuki Okamura , Tatsuo Shiina , Nobuo Ishii , Tomohiro Suzuki , Chishio Koshimizu
发明人： Masafumi Ito , Yasuyuki Okamura , Tatsuo Shiina , Nobuo Ishii , Tomohiro Suzuki , Chishio Koshimizu
IPC分类号： G01J5/00 , G01K11/12 , H01L21/324 , G01K1/16
CPC分类号： G01J5/0003 , G01K11/12
摘要： The temperature of the surface and/or inside of a substrate is measured by irradiating the front surface or rear surface of the substrate, whose temperature is to be measured, with light and measuring the interference of a reflected light from the substrate and a reference light. A method and apparatus for measuring temperature or thickness which is suitable for directly measuring the temperature of the outermost surface layer of a substrate, and an apparatus for treating a substrate for an electronic device, which uses such method, are provided.
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公开(公告)号：US5374327A
公开(公告)日：1994-12-20
申请号：US053353
申请日：1993-04-28
申请人： Issei Imahashi , Nobuo Ishii , Chishio Koshimizu
发明人： Issei Imahashi , Nobuo Ishii , Chishio Koshimizu
IPC分类号： H01L21/302 , C23F4/00 , G01N21/68 , H01L21/3065 , G01N21/00
CPC分类号： G01N21/68
摘要： HBr and Cl.sub.2 are used as etching gases and Ar is used as a carrier gas in an ECR etching apparatus in which a semiconductor wafer is processed. Light emitted from plasma generated is dispersed by first and second spectroscopes to detect intensities of those spectra of the plasma which have first and second wavelengths. Both of these spectra are selected from those of an Ar atom. A CPU compares a present value, which represents a ratio of the spectral intensities detected, with a selected value of the ratio previously stored, and adjusts the intensity of a magnetic field such that the present value becomes closer to the selected value. The adjustment of the magnetic field intensity is carried out by changing the value of a current applied to magnetic coils. The magnetic field intensity is a parameter for adjusting an electron temperature of the plasma, and thus, the electron temperature of the plasma is adjusted by adjusting the magnetic field intensity.
摘要翻译： HBr和Cl2用作蚀刻气体，Ar用作加工半导体晶片的ECR蚀刻装置中的载气。 由等离子体产生的光被第一和第二光谱分散，以检测具有第一和第二波长的等离子体的那些光谱的强度。 这两种光谱均选自Ar原子。 CPU将表示所检测的光谱强度的比率的当前值与先前存储的比率的选定值进行比较，并且调整磁场的强度，使得当前值变得更接近所选择的值。 通过改变施加到电磁线圈的电流的值来进行磁场强度的调整。 磁场强度是用于调整等离子体的电子温度的参数，因此通过调整磁场强度来调整等离子体的电子温度。
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