Method for producing single crystal silicon solar cell and single crystal silicon solar cell
    21.
    发明申请
    Method for producing single crystal silicon solar cell and single crystal silicon solar cell 有权
    单晶硅太阳能电池和单晶硅太阳能电池的制造方法

    公开(公告)号:US20080099065A1

    公开(公告)日:2008-05-01

    申请号:US11907902

    申请日:2007-10-18

    IPC分类号: H01L31/04 B29C65/00

    摘要: There is disclosed a method for producing a single crystal silicon solar cell comprising the steps of: implanting hydrogen ions or rare gas ions into a single crystal silicon substrate through an ion implanting surface thereof to form an ion implanted layer in the single crystal silicon substrate; forming a transparent electroconductive film on a surface of a transparent insulator substrate; conducting a surface activating treatment for the ion implanting surface of the single crystal silicon substrate and/or a surface of the transparent electroconductive film on the transparent insulator substrate; bonding the ion implanting surface of the single crystal silicon substrate and the surface of the transparent electroconductive film on the transparent insulator substrate to each other; applying an impact to the ion implanted layer to mechanically delaminate the single crystal silicon substrate thereat to leave a single crystal silicon layer; and forming a p-n junction in the single crystal silicon layer. There can be provided a single crystal silicon solar cell where a light conversion layer is provided as a thin-film for effective utilization of silicon as a starting material of the silicon solar cell, which single crystal silicon solar cell is excellent in conversion characteristics and is less in degradation due to light irradiation, and which single crystal silicon solar cell is provided as a see-through type solar cell that is usable as a natural lighting window material of a house or the like.

    摘要翻译: 公开了一种用于制造单晶硅太阳能电池的方法,包括以下步骤:通过其离子注入表面将氢离子或稀有气体离子注入到单晶硅衬底中,以在单晶硅衬底中形成离子注入层; 在透明绝缘体基板的表面上形成透明导电膜; 对透明绝缘体基板上的单晶硅衬底的离子注入表面和/或透明导电膜的表面进行表面激活处理; 将透明绝缘体基板上的单晶硅衬底的离子注入表面和透明导电膜的表面彼此接合; 对离子注入层施加冲击以在其上机械分层单晶硅衬底以留下单晶硅层; 并在单晶硅层中形成p-n结。 可以提供一种单晶硅太阳能电池,其中提供光转换层作为有效利用硅作为硅太阳能电池的起始材料的薄膜,该单晶硅太阳能电池的转换特性优异,并且是 由于光照射而导致的劣化较少,并且提供单晶硅太阳能电池作为可用作房屋等的自然采光窗材料的透明型太阳能电池。

    Radio apparatus capable of autonomous position estimation and radio network system including the same
    22.
    发明申请
    Radio apparatus capable of autonomous position estimation and radio network system including the same 有权
    能够进行自主位置估计的无线电装置和包括其的无线电网络系统

    公开(公告)号:US20080014963A1

    公开(公告)日:2008-01-17

    申请号:US11730245

    申请日:2007-03-30

    IPC分类号: H04Q7/20

    CPC分类号: H04W64/00 G01S5/14

    摘要: A radio apparatus forming a radio network system calculates a calculated distance, based on a tentative self-position and tentative positions of a plurality of radio apparatuses existing in the vicinity. The radio apparatus successively and autonomously corrects the tentative self-position so that the calculated distance comes closer to the measured distance, relying more heavily on the calculated distance than the measured distance between itself and each of the plurality of radio apparatuses, and determines the position of itself. Other radio apparatuses also successively correct the tentative self-positions by the same method as the radio apparatus, and determine the positions of themselves.

    摘要翻译: 形成无线电网络系统的无线电设备基于存在于附近的多个无线电设备的临时自身位置和临时位置来计算计算出的距离。 无线电设备相继地并且自主地校正临时自身位置,使得所计算的距离更靠近测量的距离,更依赖于所计算的距离,而不是其测量的与多个无线电设备中的每一个之间的距离,并且确定位置 本身。 其他无线电设备也通过与无线电设备相同的方法连续校正临时自身位置,并且确定其自身的位置。

    Mast cell surface antigen, DNA thereof, and antibody against the antigen
    23.
    发明授权
    Mast cell surface antigen, DNA thereof, and antibody against the antigen 失效
    肥大细胞表面抗原,其DNA,抗抗原抗体

    公开(公告)号:US07045597B2

    公开(公告)日:2006-05-16

    申请号:US10250644

    申请日:2001-01-04

    IPC分类号: C07K14/435 A61K39/00

    CPC分类号: C07K14/705 C07K16/28

    摘要: A mast cell surface antigen, DNA thereof and an antibody against the antigen are provided. The amino acid sequence of this mast cell surface antigen is the translation of the coding region of its DNA. The base sequence of this DNA has been clarified in the following manner. Namely, mast cells obtained by incubating cord blood monocular cells are co-incubated with primary culture of fibroblasts to give connective tissue type mast cells (MC-TC). Then mRNA is extracted from this MC-TC cell extraction and a cDNA library is constructed therefrom. Immunological screening is carried out with the use of anti-MC-TC antiserum and the base sequence of the positive clone thus obtained is identified. Owing to the clarification of the amino acid sequence of this mast cell antigen, it becomes possible to reveal the role of mast cells in the pathology of allergic diseases and thus an antibody against mast cells can be easily obtained.

    摘要翻译: 提供肥大细胞表面抗原,其DNA和针对抗原的抗体。 该肥大细胞表面抗原的氨基酸序列是其DNA编码区的翻译。 该DNA的碱基序列已经以下述方式进行了说明。 即,将通过孵育脐带血单核细胞获得的肥大细胞与成纤维细胞的原代培养物共温育以产生结缔组织型肥大细胞(MC-TC)。 然后从该MC-TC细胞提取中提取mRNA,并由其构建cDNA文库。 使用抗MC-TC抗血清进行免疫筛选,鉴定得到的阳性克隆的碱基序列。 由于这种肥大细胞抗原的氨基酸序列的澄清,可以揭示肥大细胞在过敏性疾病的病理学中的作用,因此可以容易地获得抗肥大细胞的抗体。

    Silicon focus ring and method for producing the same
    24.
    发明授权
    Silicon focus ring and method for producing the same 失效
    硅聚焦环及其制造方法

    公开(公告)号:US06815352B1

    公开(公告)日:2004-11-09

    申请号:US09696955

    申请日:2000-10-27

    IPC分类号: H01L21302

    摘要: There is disclosed a silicon focus ring consisting of silicon single crystal used as a silicon focus ring in a plasma apparatus, wherein concentration of interstitial oxygen contained in the silicon focus ring is not less than 5×1017 atoms/cm3 and not more than 1.5×1018 atoms/cm3, and a producing method for a silicon focus ring used for a plasma apparatus, wherein a single crystal silicon wherein concentration of interstitial oxygen contained in the silicon focus ring is not less than 5×1017 atoms/cm3 and not more than 1.5×1018 atoms/cm3 is grown by a Czochralski method, the single crystal silicon is processed in a circle, and a silicon focus ring is produced. There can be provided a silicon focus ring, which can prevent disadvantage due to impurities such as heavy metal.

    摘要翻译: 公开了在等离子体装置中用作硅聚焦环的硅单晶组成的硅聚焦环,其中硅聚焦环中所含的间隙氧的浓度不小于5×10 17原子/ cm 3,而不是 大于1.5×10 18原子/ cm 3,以及用于等离子体装置的硅聚焦环的制造方法,其中,在硅聚焦环中包含的间隙氧的浓度为5×10 6个以上的单晶硅 通过Czochralski法生长17个原子/ cm 3以上1.5×10 18个/ cm 3以下的单晶硅,制成硅聚焦环。 可以提供硅聚焦环,其可以防止由于诸如重金属的杂质导致的不利影响。

    Agent apparatus
    25.
    发明授权
    Agent apparatus 失效
    代理设备

    公开(公告)号:US06437689B2

    公开(公告)日:2002-08-20

    申请号:US09814169

    申请日:2001-03-22

    IPC分类号: B60Q100

    摘要: An agent apparatus increases security, and can make responses suited to individuals, thereby increasing convenience. The agent apparatus comprises an individual recognition unit which recognizes individuals who use a vehicle; a memory unit which stores agent data corresponding to each individual recognized by the individual recognition unit; a selection unit which selects agent data corresponding to a specific individuals recognized by the individual recognition unit from the agent data stored in the memory unit; and a response unit which responds to the individual based on the agent data selected by the selection unit.

    摘要翻译: 代理机构增加安全性,并且可以使响应适合于个人,从而增加方便性。 代理装置包括识别使用车辆的个人的个人识别单元; 存储单元,其存储与由各个识别单元识别的每个个体对应的代理数据; 选择单元,从存储在存储单元中的代理数据中选择与由个人识别单元识别的特定个人对应的代理数据; 以及响应单元,其基于由所述选择单元选择的代理数据对所述个人进行响应。

    Antibodies, production method of the antibodies, hybridomas which produce the antibodies, production method of the hybridomas and antigen proteins recognized by the antibodies
    26.
    发明授权
    Antibodies, production method of the antibodies, hybridomas which produce the antibodies, production method of the hybridomas and antigen proteins recognized by the antibodies 有权
    抗体的制备方法,产生抗体的杂交瘤,抗体识别的杂交瘤的生产方法和抗原蛋白

    公开(公告)号:US06255107B1

    公开(公告)日:2001-07-03

    申请号:US09229932

    申请日:1999-01-13

    IPC分类号: C12N512

    CPC分类号: C07K14/705 C07K16/28

    摘要: The invention is related to antibodies which specifically react with connective tissue type-human mast cells, a production method of the antibodies, hybridomas which produce the antibodies, a production method of the hybridomas and antigen proteins recognized by the antibodies. After cord blood cells were cultured in the presence of SCF and IL-6, they were further cocultured with primary culture of human skin fibroblasts, and connective tissue type-human mast cells were thus obtained. A rat was immunized using the cells, hybridomas were prepared and selected by an ordinary method, and novel monoclonal antibodies were harvested from the culture supernatant of the selected hybridomas. The monoclonal antibodies specifically reacted with connective tissue type-human mast cells.

    摘要翻译: 本发明涉及与结缔组织型 - 人肥大细胞特异性反应的抗体,抗体的制备方法,产生抗体的杂交瘤,由抗体识别的杂交瘤和抗原蛋白的制备方法。 在SCF和IL-6存在下培养脐带血细胞后,与人皮肤成纤维细胞的原代培养物进一步共培养,得到结缔组织型人类肥大细胞。 使用细胞免疫大鼠,通过常规方法制备杂交瘤并选择,并从所选择的杂交瘤的培养上清液中收获新的单克隆抗体。 单克隆抗体与结缔组织型 - 人类肥大细胞特异性反应。

    Liquid level indication device
    27.
    发明授权
    Liquid level indication device 失效
    液位指示装置

    公开(公告)号:US4845986A

    公开(公告)日:1989-07-11

    申请号:US894919

    申请日:1986-08-08

    IPC分类号: G01F23/72

    CPC分类号: G01F23/72

    摘要: A liquid level indicator for detecting a liquid level by utilizing the variation inductance of a coil having a core made of an electrical insulating magnetic material and provided inside a winding of the coil. The core may be made by piling a plurality of thin, plate-shaped conductive materials one on another in the cross-sectional direction of the coil so that they are insulated from each other or by winding a conductive magnetic material at least one turn in the form of a roll so that a closed loop current is not formed in the cross-sectional direction of the coil. An eddy current loss of the core so arranged is so small that it can be disregarded. Furthermore, the winding component of the core itself is substantially released in the equivalent circuit of the coil.

    摘要翻译: 一种液位指示器,用于通过利用具有由电绝缘磁性材料制成的芯并且设置在线圈的绕组内的线圈的变化电感来检测液位。 芯可以通过在线圈的横截面方向上一个接一个地堆叠多个薄的板状导电材料制成,使得它们彼此绝缘或者通过将导电磁性材料卷绕在至少一个转弯处 使得在线圈的横截面方向上不形成闭环电流。 如此排列的核心的涡流损耗非常小,可以忽略。 此外,芯本身的绕组部件基本上被释放在线圈的等效电路中。

    Method for reducing the thickness of an SOI layer
    28.
    发明授权
    Method for reducing the thickness of an SOI layer 有权
    降低SOI层厚度的方法

    公开(公告)号:US09064929B2

    公开(公告)日:2015-06-23

    申请号:US12153519

    申请日:2008-05-20

    摘要: There is disclosed a method for manufacturing an SOI wafer comprising: a step of implanting at least one of a hydrogen ion and a rare gas ion into a donor wafer to form an ion implanted layer; a step of bonding an ion implanted surface of the donor wafer to a handle wafer; a step of delaminating the donor wafer at the ion implanted layer to reduce a film thickness of the donor wafer, thereby providing an SOI layer; and a step of etching the SOI layer to reduce a thickness of the SOI layer, wherein the etching step includes: a stage of performing rough etching as wet etching; a stage of measuring a film thickness distribution of the SOI layer after the rough etching; and a stage of performing precise etching as dry etching based on the measured film thickness distribution of the SOI layer. There can be provided A method for manufacturing an SOI wafer having high film thickness uniformity of an SOI layer with excellent productivity.

    摘要翻译: 公开了一种用于制造SOI晶片的方法,包括:将氢离子和稀有气体离子中的至少一种注入施主晶片以形成离子注入层的步骤; 将施主晶片的离子注入表面接合到处理晶片的步骤; 在离子注入层分层施主晶片以降低施主晶片的膜厚,从而提供SOI层的步骤; 以及蚀刻所述SOI层以减小所述SOI层的厚度的步骤,其中所述蚀刻步骤包括:执行粗蚀刻的阶段,如湿蚀刻; 在粗蚀刻之后测量SOI层的膜厚分布的阶段; 以及基于所测量的SOI层的膜厚分布,进行干蚀刻的精确蚀刻的阶段。 可以提供一种以优异的生产率制造具有SOI层的高膜厚均匀性的SOI晶片的方法。

    Process for producing laminated substrate and laminated substrate
    29.
    发明授权
    Process for producing laminated substrate and laminated substrate 有权
    叠层基板和叠层基板的制造方法

    公开(公告)号:US08765576B2

    公开(公告)日:2014-07-01

    申请号:US12550340

    申请日:2009-08-28

    摘要: A method of manufacturing a laminated substrate is provided. The method includes: forming an oxide film on at least a surface of a first substrate having a hardness of equal to or more than 150 GPa in Young's modulus, and then smoothing the oxide film; implanting hydrogen ions or rare gas ions, or mixed gas ions thereof from a surface of a second substrate to form an ion-implanted layer inside the substrate, laminating the first substrate and the second substrate through at least the oxide film, and then detaching the second substrate in the ion-implanted layer to form a laminated substrate; heat-treating the laminated substrate and diffusing outwardly the oxide film.

    摘要翻译: 提供一种制造叠层基板的方法。 该方法包括:在杨氏模量下,在硬度为150GPa以上的第一基板的至少表面形成氧化膜,然后平滑氧化膜; 从第二基板的表面注入氢离子或稀有气体离子或其混合气体离子以在基板内部形成离子注入层,至少通过氧化物膜层压第一基板和第二基板,然后将 在离子注入层中形成第二衬底以形成层压衬底; 对层压基板进行热处理并向外扩散氧化膜。

    Method of manufacturing laminated wafer by high temperature laminating method
    30.
    发明授权
    Method of manufacturing laminated wafer by high temperature laminating method 有权
    通过高温层压法制造层压晶片的方法

    公开(公告)号:US08551862B2

    公开(公告)日:2013-10-08

    申请号:US12685194

    申请日:2010-01-11

    IPC分类号: H01L21/30

    摘要: To provide a method of manufacturing a laminated wafer by which a strong coupling is achieved between wafers made of different materials having a large difference in thermal expansion coefficient without lowering a maximum heat treatment temperature as well as in which cracks or chips of the wafer does not occur. A method of manufacturing a laminated wafer 7 by forming a silicon film layer on a surface 4 of an insulating substrate 3 comprising the steps in the following order of: applying a surface activation treatment to both a surface 2 of a silicon wafer 1 or a silicon wafer 1 to which an oxide film is layered and a surface 4 of the insulating substrate 3 followed by laminating in an atmosphere of temperature exceeding 50° C. and lower than 300° C., applying a heat treatment to a laminated wafer 5 at a temperature of 200° C. to 350° C., and thinning the silicon wafer 1 by a combination of grinding, etching and polishing to form a silicon film layer.

    摘要翻译: 为了提供一种制造层叠晶片的方法,在不降低最大热处理温度的情况下,不会降低最大热处理温度以及晶片的裂纹或芯片不会在不具有热膨胀系数差的不同材料制成的晶片之间实现强耦合, 发生。 一种通过在绝缘基板3的表面4上形成硅膜层来制造层压晶片7的方法,包括以下顺序的步骤:对硅晶片1或硅的表面2施加表面活化处理 叠层氧化膜的晶片1和绝缘基板3的表面4,然后在温度超过50℃且低于300℃的气氛中层压,在层叠晶片5上进行热处理 温度为200〜350℃,通过研磨,蚀刻和研磨的组合使硅晶片1变薄,形成硅膜层。