摘要:
There is disclosed a method for producing a single crystal silicon solar cell comprising the steps of: implanting hydrogen ions or rare gas ions into a single crystal silicon substrate through an ion implanting surface thereof to form an ion implanted layer in the single crystal silicon substrate; forming a transparent electroconductive film on a surface of a transparent insulator substrate; conducting a surface activating treatment for the ion implanting surface of the single crystal silicon substrate and/or a surface of the transparent electroconductive film on the transparent insulator substrate; bonding the ion implanting surface of the single crystal silicon substrate and the surface of the transparent electroconductive film on the transparent insulator substrate to each other; applying an impact to the ion implanted layer to mechanically delaminate the single crystal silicon substrate thereat to leave a single crystal silicon layer; and forming a p-n junction in the single crystal silicon layer. There can be provided a single crystal silicon solar cell where a light conversion layer is provided as a thin-film for effective utilization of silicon as a starting material of the silicon solar cell, which single crystal silicon solar cell is excellent in conversion characteristics and is less in degradation due to light irradiation, and which single crystal silicon solar cell is provided as a see-through type solar cell that is usable as a natural lighting window material of a house or the like.
摘要:
A radio apparatus forming a radio network system calculates a calculated distance, based on a tentative self-position and tentative positions of a plurality of radio apparatuses existing in the vicinity. The radio apparatus successively and autonomously corrects the tentative self-position so that the calculated distance comes closer to the measured distance, relying more heavily on the calculated distance than the measured distance between itself and each of the plurality of radio apparatuses, and determines the position of itself. Other radio apparatuses also successively correct the tentative self-positions by the same method as the radio apparatus, and determine the positions of themselves.
摘要:
A mast cell surface antigen, DNA thereof and an antibody against the antigen are provided. The amino acid sequence of this mast cell surface antigen is the translation of the coding region of its DNA. The base sequence of this DNA has been clarified in the following manner. Namely, mast cells obtained by incubating cord blood monocular cells are co-incubated with primary culture of fibroblasts to give connective tissue type mast cells (MC-TC). Then mRNA is extracted from this MC-TC cell extraction and a cDNA library is constructed therefrom. Immunological screening is carried out with the use of anti-MC-TC antiserum and the base sequence of the positive clone thus obtained is identified. Owing to the clarification of the amino acid sequence of this mast cell antigen, it becomes possible to reveal the role of mast cells in the pathology of allergic diseases and thus an antibody against mast cells can be easily obtained.
摘要:
There is disclosed a silicon focus ring consisting of silicon single crystal used as a silicon focus ring in a plasma apparatus, wherein concentration of interstitial oxygen contained in the silicon focus ring is not less than 5×1017 atoms/cm3 and not more than 1.5×1018 atoms/cm3, and a producing method for a silicon focus ring used for a plasma apparatus, wherein a single crystal silicon wherein concentration of interstitial oxygen contained in the silicon focus ring is not less than 5×1017 atoms/cm3 and not more than 1.5×1018 atoms/cm3 is grown by a Czochralski method, the single crystal silicon is processed in a circle, and a silicon focus ring is produced. There can be provided a silicon focus ring, which can prevent disadvantage due to impurities such as heavy metal.
摘要翻译:公开了在等离子体装置中用作硅聚焦环的硅单晶组成的硅聚焦环,其中硅聚焦环中所含的间隙氧的浓度不小于5×10 17原子/ cm 3,而不是 大于1.5×10 18原子/ cm 3,以及用于等离子体装置的硅聚焦环的制造方法,其中,在硅聚焦环中包含的间隙氧的浓度为5×10 6个以上的单晶硅 通过Czochralski法生长17个原子/ cm 3以上1.5×10 18个/ cm 3以下的单晶硅,制成硅聚焦环。 可以提供硅聚焦环,其可以防止由于诸如重金属的杂质导致的不利影响。
摘要:
An agent apparatus increases security, and can make responses suited to individuals, thereby increasing convenience. The agent apparatus comprises an individual recognition unit which recognizes individuals who use a vehicle; a memory unit which stores agent data corresponding to each individual recognized by the individual recognition unit; a selection unit which selects agent data corresponding to a specific individuals recognized by the individual recognition unit from the agent data stored in the memory unit; and a response unit which responds to the individual based on the agent data selected by the selection unit.
摘要:
The invention is related to antibodies which specifically react with connective tissue type-human mast cells, a production method of the antibodies, hybridomas which produce the antibodies, a production method of the hybridomas and antigen proteins recognized by the antibodies. After cord blood cells were cultured in the presence of SCF and IL-6, they were further cocultured with primary culture of human skin fibroblasts, and connective tissue type-human mast cells were thus obtained. A rat was immunized using the cells, hybridomas were prepared and selected by an ordinary method, and novel monoclonal antibodies were harvested from the culture supernatant of the selected hybridomas. The monoclonal antibodies specifically reacted with connective tissue type-human mast cells.
摘要:
A liquid level indicator for detecting a liquid level by utilizing the variation inductance of a coil having a core made of an electrical insulating magnetic material and provided inside a winding of the coil. The core may be made by piling a plurality of thin, plate-shaped conductive materials one on another in the cross-sectional direction of the coil so that they are insulated from each other or by winding a conductive magnetic material at least one turn in the form of a roll so that a closed loop current is not formed in the cross-sectional direction of the coil. An eddy current loss of the core so arranged is so small that it can be disregarded. Furthermore, the winding component of the core itself is substantially released in the equivalent circuit of the coil.
摘要:
There is disclosed a method for manufacturing an SOI wafer comprising: a step of implanting at least one of a hydrogen ion and a rare gas ion into a donor wafer to form an ion implanted layer; a step of bonding an ion implanted surface of the donor wafer to a handle wafer; a step of delaminating the donor wafer at the ion implanted layer to reduce a film thickness of the donor wafer, thereby providing an SOI layer; and a step of etching the SOI layer to reduce a thickness of the SOI layer, wherein the etching step includes: a stage of performing rough etching as wet etching; a stage of measuring a film thickness distribution of the SOI layer after the rough etching; and a stage of performing precise etching as dry etching based on the measured film thickness distribution of the SOI layer. There can be provided A method for manufacturing an SOI wafer having high film thickness uniformity of an SOI layer with excellent productivity.
摘要:
A method of manufacturing a laminated substrate is provided. The method includes: forming an oxide film on at least a surface of a first substrate having a hardness of equal to or more than 150 GPa in Young's modulus, and then smoothing the oxide film; implanting hydrogen ions or rare gas ions, or mixed gas ions thereof from a surface of a second substrate to form an ion-implanted layer inside the substrate, laminating the first substrate and the second substrate through at least the oxide film, and then detaching the second substrate in the ion-implanted layer to form a laminated substrate; heat-treating the laminated substrate and diffusing outwardly the oxide film.
摘要:
To provide a method of manufacturing a laminated wafer by which a strong coupling is achieved between wafers made of different materials having a large difference in thermal expansion coefficient without lowering a maximum heat treatment temperature as well as in which cracks or chips of the wafer does not occur. A method of manufacturing a laminated wafer 7 by forming a silicon film layer on a surface 4 of an insulating substrate 3 comprising the steps in the following order of: applying a surface activation treatment to both a surface 2 of a silicon wafer 1 or a silicon wafer 1 to which an oxide film is layered and a surface 4 of the insulating substrate 3 followed by laminating in an atmosphere of temperature exceeding 50° C. and lower than 300° C., applying a heat treatment to a laminated wafer 5 at a temperature of 200° C. to 350° C., and thinning the silicon wafer 1 by a combination of grinding, etching and polishing to form a silicon film layer.