公开(公告)号：US06822838B2

公开(公告)日：2004-11-23

申请号：US10116017

申请日：2002-04-02

申请人： Tsann Lin ,  Daniele Mauri

发明人： Tsann Lin ,  Daniele Mauri

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3938 ,  G11B5/3954 ,  G11B5/3967

摘要： A dual magnetic tunnel junction (MTJ) sensor is provided with a longitudinal bias stack sandwiched between a first MTJ stack and a second MTJ stack. The longitudinal bias stack comprises an antiferromagnetic (AFM) layer sandwiched between first and second ferromagnetic layers. The first and second MTJ stacks comprise antiparallel (AP)-pinned layers pinned by AFM layers made of an AFM material having a higher blocking temperature than the AFM material of the bias stack allowing the AP-pinned layers to be pinned in a transverse direction and the bias stack to be pinned in a longitudinal direction. The demagnetizing fields of the two AP-pinned layers cancel each other and the bias stack provides flux closures for the sense layers of the first and second MTJ stacks.

摘要翻译： 双磁隧道结（MTJ）传感器设置有夹在第一MTJ堆叠和第二MTJ堆叠之间的纵向偏置堆叠。 纵向偏置堆叠包括夹在第一和第二铁磁层之间的反铁磁（AFM）层。 第一和第二MTJ堆叠包括由具有比偏置堆叠的AFM材料更高的阻挡温度的AFM材料制成的AFM层固定的反平行（AP） - 镀层，其允许将AP钉扎层沿横向方向固定， 偏置堆叠沿纵向方向固定。 两个AP钉扎层的去磁场彼此抵消，并且偏置堆叠为第一和第二MTJ堆叠的感测层提供磁通闭合。

公开(公告)号：US06785099B2

公开(公告)日：2004-08-31

申请号：US10068231

申请日：2002-02-04

申请人： Wen-Yaung Lee ,  Tsann Lin ,  Daniele Mauri

发明人： Wen-Yaung Lee ,  Tsann Lin ,  Daniele Mauri

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/012 ,  G11B5/09 ,  G11B5/3143 ,  G11B5/3146 ,  G11B5/332 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3967 ,  G11B2005/3996

摘要： A read head is provided having having ultrathin read gap layers with improved insulative properties between a magnetoresistive sensor and ferromagnetic shield layers. The read head comprises a magnetoresistive sensor with first and second shield cap layers made of high resistivity permeable magnetic material formed between the first and second ferromagnetic shields and the first and second insulative read gap layers, respectively. The shield cap layers made of Fe—Hf—Ox material, or alternatively, the Mn—Zn ferrite material provide highly resistive or insulating soft ferromagnetic layers which add to the electrically insulative read gap layers to provide increased electrical insulation of the spin valve sensor from the metallic ferromagnetic shields while not adding to the magnetic read gap of the read head. The extra insulation provided by the highly resistive shield cap layers makes it possible to use ultrathin insulative first and second read gap layers without increased risk of electrical shorting between the spin valve sensor and the ferromagnetic first and second shields.

摘要翻译： 提供读头，其具有在磁阻传感器和铁磁屏蔽层之间具有改进的绝缘性能的超薄读取间隙层。 读头包括磁阻传感器，其具有由分别形成在第一和第二铁磁屏蔽之间的高电阻率可渗透磁性材料制成的第一和第二屏蔽盖层以及第一和第二绝缘读取间隙层。 由Fe-Hf-Ox材料制成的屏蔽帽层，或者Mn-Zn铁氧体材料提供高电阻或绝缘的软铁磁层，这些层叠电绝缘读取间隙层以提供自旋阀传感器的增加的电绝缘 金属铁磁屏蔽，同时不增加读头的磁读取间隙。 由高电阻屏蔽盖层提供的额外的绝缘使得可以使用超薄绝缘的第一和第二读取间隙层，而不增加自旋阀传感器和铁磁性第一和第二屏蔽之间的电短路的风险。

公开(公告)号：US06735058B2

公开(公告)日：2004-05-11

申请号：US10067645

申请日：2002-02-04

申请人： Tsann Lin ,  Daniele Mauri

发明人： Tsann Lin ,  Daniele Mauri

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B2005/3996

摘要： A current-perpendicular-to-plane (CPP) read head with an amorphous magnetic bottom shield layer and an amorphous nonmagnetic bottom lead gap layer is disclosed. The amorphous magnetic bottom shield layer and amorphous nonmagnetic bottom lead layer provide a planar surface for the CPP read head deposited thereon to exhibit a low ferromagnetic coupling field and a high giant (or tunneling) magnetoresistance coefficient. The amorphous magnetic bottom shield layer is preferably formed of an Fe-based or Co-based film. The amorphous nonmagnetic bottom lead layer is preferable formed of a W-based or Ni-based film.

摘要翻译： 公开了具有非晶磁性底部屏蔽层和非晶非磁性底部引线间隙层的电流垂直平面（CPP）读取头。 非晶磁性底部屏蔽层和非晶非磁性底部引线层为沉积在其上的CPP读取头提供平坦的表面，以显示低铁磁耦合场和高的巨（（隧道））磁阻系数。 非晶磁性底部屏蔽层优选由Fe基或Co基膜形成。 非晶非磁性底部引线层优选由W基或Ni基膜形成。

公开(公告)号：US06175475B1

公开(公告)日：2001-01-16

申请号：US09085654

申请日：1998-05-27

申请人： Tsann Lin ,  Daniele Mauri ,  Joseph Francis Smyth ,  Ching Hwa Tsang

发明人： Tsann Lin ,  Daniele Mauri ,  Joseph Francis Smyth ,  Ching Hwa Tsang

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/012 ,  G11B5/3903 ,  G11B2005/3996

摘要： A fully-pinned, flux-closed spin valve (SV) magnetoresistive sensor having a reference (pinned) layer with magnetization fixed by a first antiferromagnetic (AFM1) layer, and a keeper layer with magnetization fixed by a second antiferromagnetic (AFM2) layer. The magnetization of the keeper layer is saturated and fixed in an antiparallel orientation to the pinned layer magnetization by an exchange interaction with the AFM2 layer. The magnetic moments of the pinned layer and the keeper layer are approximately matched to form a flux-closed magnetic configuration wherein demagnetizing fields in the pinned layer are largely canceled and magnetostatic interaction with the free layer is reduced. Saturation of the keeper layer magnetization by exchange coupling with the AFM2 layer eliminates or reduces magnetization canting at the edges of the keeper layer which can result in signal field shunting through the keeper layer. AFM1 and AFM2 layers may be formed of the same antiferromagnetic material, such as NiO, or alternatively may be formed of different antiferromagnetic materials, such as Ni—Mn and NiO, respectively.

摘要翻译： 具有由第一反铁磁（AFM1）层固定的磁化的参考（固定）层的完全固定的磁通闭合自旋阀（SV）磁阻传感器，以及具有由第二反铁磁（AFM2）层固定的磁化的保持层。 通过与AFM2层的交换相互作用，保持层的磁化饱和并且以反平行取向固定到被钉层磁化。 被钉扎层和保持层的磁矩近似匹配以形成磁通闭合磁性构造，其中被钉扎层中的去磁场被大大抵消，并且与自由层的静磁相互作用减小。 通过与AFM2层的交换耦合来保持层层磁化的饱和度消除或减少了在保持层的边缘处的磁化倾斜，这可导致通过保持层的信号场分流。 AFM1和AFM2层可以由相同的反铁磁材料（例如NiO）形成，或者可以分别由不同的反铁磁材料（诸如Ni-Mn和NiO）形成。

公开(公告)号：US20080257714A1

公开(公告)日：2008-10-23

申请号：US11737705

申请日：2007-04-19

申请人： Tsann Lin ,  Daniele Mauri ,  Alexander M. Zeltser

发明人： Tsann Lin ,  Daniele Mauri ,  Alexander M. Zeltser

IPC分类号： C23C14/00

CPC分类号： C23C14/081 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  C23C14/0042 ,  C23C14/025 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3163 ,  G11B5/3906 ,  G11B5/3909 ,  H01F10/3254 ,  H01F10/3272 ,  H01F41/18 ,  H01F41/307 ,  H01L43/12

摘要： A method for manufacturing a tunnel junction magnetoresistive sensor having improved magnetic performance and reliability. The method includes depositing a Mg—O barrier layer in a sputter deposition tool in a chamber having an oxygen concentration that changes. For example, the sputter deposition could be initiated with a first oxygen concentration in the chamber, and then, during the deposition of the barrier layer the oxygen concentration can be reduced.

摘要翻译： 一种具有改进的磁性能和可靠性的隧道结磁阻传感器的制造方法。 该方法包括在具有改变的氧浓度的室中的溅射沉积工具中沉积Mg-O阻挡层。 例如，可以在室中以第一氧浓度开始溅射沉积，然后在阻挡层的沉积期间可以减少氧浓度。

公开(公告)号：US07239489B2

公开(公告)日：2007-07-03

申请号：US10900487

申请日：2004-07-28

申请人： Tsann Lin ,  Daniele Mauri

发明人： Tsann Lin ,  Daniele Mauri

IPC分类号： G11B5/39

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G01R33/06 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/40 ,  H01F10/3254 ,  H01F10/3268 ,  H01F41/18 ,  H01F41/303 ,  H01L43/08 ,  H01L43/12

摘要： A tunneling magnetoresistive (TMR) sensor includes a first ferromagnetic (FM) layer (e.g. a sense or reference layer), a barrier layer formed over the first FM layer, and a second FM layer (e.g. a sense or reference layer) formed over the barrier layer. The barrier layer is made of magnesium-oxide (Mg—O). The sense and reference layers of the TMR sensor exhibit controlled magnetic properties, the barrier layer provides a low junction resistance-area product, and the TMR sensor exhibits a high TMR coefficient. The junction resistance is sufficiently low so as to prevent electrostatic discharge (ESD) damage to submicron-sized TMR sensors used for magnetic recording at ultrahigh densities.

摘要翻译： 隧道磁阻（TMR）传感器包括第一铁磁（FM）层（例如感测或参考层），形成在第一FM层上的阻挡层，以及形成在第一FM层上的第二FM层（例如，感测层或参考层） 阻挡层。 阻挡层由氧化镁（Mg-O）制成。 TMR传感器的感测和参考层表现出受控的磁性能，阻挡层提供低结电阻面积积，TMR传感器表现出高TMR系数。 结电阻足够低，以防止用于超高密度磁记录的亚微米尺寸TMR传感器的静电放电（ESD）损坏。

公开(公告)号：US07228617B2

公开(公告)日：2007-06-12

申请号：US10672809

申请日：2003-09-29

申请人： Tsann Lin ,  Daniele Mauri

发明人： Tsann Lin ,  Daniele Mauri

IPC分类号： G11B5/127 ,  H01R31/00

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3116 ,  G11B5/3903 ,  G11B2005/3996 ,  Y10T29/49039 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49052

摘要： The GMR read head includes a GMR read sensor and a longitudinal bias (LB) stack in a read region, and the GMR read sensor, the LB stack and a first conductor layer in two overlay regions. In its fabrication process, the GMR read sensor, the LB stack and the first conductor layer are sequentially deposited on a bottom gap layer. A monolayer photoresist is deposited, exposed and developed in order to open a read trench region for the definition of a read width, and RIE is then applied to remove the first conductor layer in the read trench region. After liftoff of the monolayer photoresist, bilayer photoresists are deposited, exposed and developed in order to mask the read and overlay regions, and a second conductor layer is deposited in two unmasked side regions. As a result, side reading is eliminated and a read width is sharply defined by RIE.

摘要翻译： GMR读取头包括读取区域中的GMR读取传感器和纵向偏置（LB）堆栈，并且GMR读取传感器，LB堆叠和两个覆盖区域中的第一导体层。 在其制造过程中，GMR读取传感器，LB叠层和第一导体层依次沉积在底部间隙层上。 沉积，曝光和显影单层光致抗蚀剂以便打开用于定义读取宽度的读取沟槽区域，然后施加RIE以去除读取沟槽区域中的第一导体层。 在剥离单层光致抗蚀剂之后，将双层光致抗蚀剂沉积，曝光和显影以掩盖读取和覆盖区域，并且将第二导体层沉积在两个未掩模的侧面区域中。 结果，消除了侧读，并且通过RIE清晰地定义了读宽度。

公开(公告)号：US07133264B2

公开(公告)日：2006-11-07

申请号：US10242956

申请日：2002-09-13

申请人： Daniele Mauri ,  Tsann Lin

发明人： Daniele Mauri ,  Tsann Lin

IPC分类号： G11B5/39

CPC分类号： B82Y10/00 ,  G11B5/3903 ,  G11B5/3967 ,  G11B2005/0008 ,  Y10T29/49032

摘要： A current-perpendicular-to-plane (CPP) spin valve (SV) sensor and fabrication method with a contiguous junction type geometry that increases sensor resistance by up to two orders of magnitude over conventional CPP GMR geometry for a particular track read-width. The superior CPP GMR coefficient (δr/R) is implemented at an increased sensor resistance by using two small self-aligned SV stacks disposed with the sense current flowing perpendicular thereto when also flowing parallel to the free layer deposition plane. With the CPP geometry of this invention, thicker conductive spacer layers may be used without unacceptable sense current shunting, so the two self-aligned SV stacks may be completed following the free-layer track-mill step. The two SV stacks may be connected in parallel or back-to-back in series to provide different sense voltages.

摘要翻译： 电流垂直平面（CPP）自旋阀（SV）传感器和具有连续结型几何的制造方法，其传感器电阻比传统的CPP GMR几何尺寸提高了特定轨道读宽度两个数量级。 当平行于自由层沉积平面流动时，通过使用两个小的自对准SV堆叠设置有垂直于其的感应电流，通过使用两个小的自对准SV堆叠，以增加的传感器电阻来实现优越的CPP GMR系数（deltar / R）。 利用本发明的CPP几何形状，可以使用较厚的导电间隔层，而不会有不可接受的感测电流分流，因此可以在自由层跟踪磨阶段之后完成两个自对准的SV堆叠。 两个SV堆叠可以串联连接或背靠背连接以提供不同的感测电压。

公开(公告)号：US07020951B2

公开(公告)日：2006-04-04

申请号：US10704455

申请日：2003-11-07

申请人： Tsann Lin ,  Daniele Mauri

发明人： Tsann Lin ,  Daniele Mauri

IPC分类号： G11B5/127 ,  H04R31/00

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/313 ,  G11B5/3173 ,  G11B5/3903 ,  G11B5/3932 ,  G11B5/3967 ,  G11B2005/3996 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49067

摘要： An antiferromagnetic stabilization scheme is employed in a magnetic head for magnetically stabilizing a free layer of a spin valve. This is accomplished by utilizing an antiferromagnetic oxide film below a spin valve sensor in a read region and first and second lead layers in end regions and a ferromagnetic film in each of the lead layers that exchange couples to the antiferromagnetic oxide film in the end regions. The ferromagnetic films are pinned with their magnetic moments oriented parallel to an air bearing surface (ABS) of the magnetic head. The ferromagnetic film magnetostatically couples to the free layer which causes the free layer to be in a single magnetic domain state. Accordingly, when the free layer is subjected to magnetic incursions from a rotating disk in a disk drive, the free layer maintains a stable magnetic condition so that resistance changes of the free layer are not altered by differing magnetic conditions of the free layer.

摘要翻译： 在磁头中采用反铁磁稳定方案，用于使自旋阀的自由层磁稳定。 这通过在读取区域中的自旋阀传感器下方的反铁磁性氧化物膜和端部区域中的第一和第二引线层以及在每个引线层中的铁磁膜将端子区域中的反铁磁性氧化物膜交换而实现。 铁磁膜以与磁头的空气轴承表面（ABS）平行的磁矩定向固定。 铁磁膜静电耦合到自由层，这使得自由层处于单个磁畴状态。 因此，当自由层受到来自盘驱动器中的旋转盘的磁性侵入时，自由层保持稳定的磁条件，使得自由层的电阻变化不会因自由层的不同磁条件而改变。

公开(公告)号：US06896975B2

公开(公告)日：2005-05-24

申请号：US10040061

申请日：2002-01-04

申请人： Tsann Lin ,  Daniele Mauri

发明人： Tsann Lin ,  Daniele Mauri

IPC分类号： G01R33/09 ,  G11B5/012 ,  G11B5/39 ,  G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/012 ,  G11B5/3903 ,  Y10T428/12646 ,  Y10T428/12875 ,  Y10T428/12931 ,  Y10T428/12944 ,  Y10T428/12986 ,  Y10T428/24967 ,  Y10T428/24975 ,  Y10T428/26 ,  Y10T428/265

摘要： A spin-valve sensor with pinning layers comprising multiple antiferromagnetic films is disclosed. The multiple antiferromagnetic films are preferably selected from the same Mn-based (Ni—Mn or Pt—Mn) alloy system. The Mn content of the antiferromagnetic film in contact with the reference layer of the spin-valve sensor is selected in order to maximize its exchange coupling to the reference layer, thereby providing a high unidirectional anisotropy field for proper sensor operation. The Mn content of the other antiferromagnetic films not in contact with the reference layer of the spin-valve sensor is reduced in order to maximize the thermal stability and corrosion resistance of the spin-valve sensor for robust sensor operation at high temperatures in disk drive environments.

摘要翻译： 公开了一种具有包含多个反铁磁膜的钉扎层的自旋阀传感器。 多个反铁磁膜优选选自相同的Mn基（Ni-Mn或Pt-Mn）合金系统。 选择与自旋阀传感器的参考层接触的反铁磁性膜的Mn含量以使其与参考层的交换耦合最大化，从而为适当的传感器操作提供高的单向各向异性场。 与旋转阀传感器的参考层不接触的其他反铁磁膜的Mn含量减少，以便最大化自旋阀传感器的热稳定性和耐腐蚀性，以便在磁盘驱动器环境中的高温下进行鲁棒的传感器操作 。