Package integration for memory devices

    公开(公告)号:US10770430B1

    公开(公告)日:2020-09-08

    申请号:US16361617

    申请日:2019-03-22

    Applicant: Xilinx, Inc.

    Abstract: An electronic device and method for fabricating the same are disclosed herein. In one example the electronic device includes a substrate, a first die stack, and a second die stack. The first die stack includes a first functional die and a first dummy die. The first functional die is mounted to the substrate. The second stack includes a plurality of serially stacked second functional dies mounted to the substrate. The first dummy die is stacked on the first functional die. The first dummy die has a top surface that is substantially coplanar with a top surface of the second die stack. In one particular example, the first die stack includes a logic die and the second die stack includes a plurality of serially stacked memory dies.

    Chip package assembly with modular core dice

    公开(公告)号:US10692837B1

    公开(公告)日:2020-06-23

    申请号:US16041530

    申请日:2018-07-20

    Applicant: Xilinx, Inc.

    Abstract: A chip package assembly and method for fabricating the same are provided which utilize at least one modular core dice to reduce the cost of manufacture. The modular core dice include at least two die disposed on a wafer segment that are separated by a scribe lane. In one example, a chip package assembly is provided that includes an interconnect substrate stacked below a first wafer segment. The first wafer segment has a first die spaced from a second die by a first scribe lane. The interconnect substrate has conductive routing that is electrically connected to the first die and the second die through die connections.

    Wafer edge partial die engineered for stacked die yield

    公开(公告)号:US10431565B1

    公开(公告)日:2019-10-01

    申请号:US15907034

    申请日:2018-02-27

    Applicant: Xilinx, Inc.

    Abstract: A stacked wafer assembly and method for fabricating the same are described herein. In one example, a stacked wafer assembly includes a first wafer bonded to a second wafer. The first wafer includes a plurality of fully functional dies and a first partial die formed thereon. The second wafer includes a plurality of fully functional dies and a first partial die formed thereon. Bond pads formed over an inductor of the first partial die of the first wafer are bonded to bond pads formed on the first partial die of the second wafer to establish electrical connection therebetween.

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