摘要:
In order to improve reliability by preventing edge breakdown in a semiconductor photodetector having a mesa structure such as a mesa APD, the semiconductor photodetector includes a mesa structure formed on a first semiconductor layer of the first conduction type formed on a semiconductor substrate, the mesa structure including a light absorbing layer for absorbing light, an electric field buffer layer for dropping an electric field intensity, an avalanche multiplication layer for causing avalanche multiplication to occur, and a second semiconductor layer of the second conduction type, wherein the thickness of the avalanche multiplication layer at the portion in the vicinity of the side face of the mesa structure is made thinner than the thickness at the central portion of the mesa structure.
摘要:
An automatic document feeder is mounted on a platen cover, which is located on a housing of a manuscript scanning section and movable relative to the housing to have open and shut states. The automatic document feeder is provided with: a manuscript stacker adapted to have manuscripts stacked on it; an outer frame structure having the manuscript stacker movable to attain the open and shut states; and a handle section provided integrally with the outer frame structure and disposed anteriorly to the manuscript stacker. The space between the manuscript stacker and the platen cover serves as a manuscript discharging section. The handle section is formed in a shape so as to avoid narrowing the entrance for inserting a hand into the manuscript discharging section.
摘要:
An object is to improve machinability and polishability of a brass material prepared through cold working, particularly in a brass pipe material. Before cold working, by having an &agr; phase making heat treatment step for increasing an area ratio of an &agr; phase, cold ductility can be ensured at the time of cold working. Also, after cold working, by having a &bgr; phase making heat treatment step for increasing an area ratio of a &bgr; phase, a brass material excellent in machinability and polishability can be provided.
摘要:
A module 1 movable over the original surface 110 of the original reader 100 has a metal sheet frame 4 disposed in the vicinity of its gravitational center and having a substantially channel-like shape. A first and a second optical systems 2 and 3 and a drive source 6 assembled to be integral with a flat part 40 of the metal sheet frame 4. Thus, a reduced-size, improved quality and improved-accuracy original reader to be used for facsimile devices and image scanners is obtained.
摘要:
In order to improve reliability by preventing an edge breakdown in a semiconductor photodetector having a mesa structure such as a mesa APD, the semiconductor photodetector comprises a mesa structure formed on a first semiconductor layer of the first conduction type formed on a semiconductor substrate, the mesa structure including a light absorbing layer for absorbing light, an electric field buffer layer for dropping an electric field intensity, an avalanche multiplication layer for causing avalanche multiplication to occur, and a second semiconductor layer of the second conduction type, wherein the thickness of the avalanche multiplication layer at the portion in the vicinity of the side face of the mesa structure is made thinner than the thickness at the central portion of the mesa structure.
摘要:
There is provided a brass free from lead (Pb) and possessing excellent machinability, castability, mechanical properties and other properties. A brass consisting of not less than 55% by weight and not more than 75% by weight of copper (Cu), not less than 0.3% by weight and not more than 4.0% by weight of bismuth (Bi), and y % by weight of boron (B) and x % by weight of silicon (Si), y and x satisfying the following requirements: 0≦x≦2.0, 0≦y≦0.3, and y>−0.15x+0.015ab, wherein a is 0.2 when Bi is 0.3% by weight ≦Bi
摘要翻译:提供了不含铅(Pb)的黄铜,具有优异的机械加工性,浇铸性,机械性能等特性。 由不少于55重量%且不超过75重量%的铜(Cu)组成的黄铜,不小于0.3重量%且不大于4.0重量%的铋(Bi),y%由 满足以下要求的硼(B)重量和x重量%的硅(Si),y和x:0 <= x <= 2.0,0 <= y <= 0.3,y> -0.15x + 0.015ab 其中当Bi为0.3重量%<= Bi <0.75重量%时a为0.2; 0.85当Bi为0.75重量%<= Bi <1.5重量%时; 当Bi为1.5重量%<= Bi <= 4.0重量%时,当锌(Zn)的表观含量不小于37%且小于41%时,b为1; 和0.75当Zn的表观含量不小于41%且不大于45%时,其余由Zn和不可避免的杂质组成,浇铸性以及例如机械加工性和机械性能都优异。
摘要:
A feeding method and apparatus for breeding natural enemy insects necessary for establishing a farming system that uses less or no pesticides and a rearing method for breeding natural enemy insects are provided.A feeding apparatus including a food supplying section, a feeding section, and a food introducing section via which the food supplying section and the feeding section are in communication with each other, and an attracting section made of a material having a specific color tone is designed, and is used to breed natural enemy insects.
摘要:
An illuminant for converting ultraviolet rays directly radiated outside from an opening of a glass tube into visible light is disposed outside a light source. The light source and the illuminant are disposed in approximately symmetrical positions sandwiching a vertical surface orthogonal to a moving direction of the light source, that is, a direction of Y and including an original reading position.
摘要:
An image scanner apparatus is composed of a housing, an optical unit positioned in the housing, a drive mechanism driving the optical unit. The drive mechanism includes first and second wires connected to the optical unit, and a drive motor driving the first and second wires. One end of the first wire is connected to a first fixture, and one end of the second wire is connected to a second fixture. The first fixture is secured to a first wire-retaining member positioned outside the housing at a first securing position, and the first wire-retaining member retains the first fixture so that the first securing position is adjustable.
摘要:
A semiconductor laser having: a group III-V semiconductor substrate; a group III-V semiconductor clad layer disposed on the substrate with a lattice mismatch of 0.5 % or more; group III-V semiconductor light propagation layers disposed on the clad layer, including an active layer and light confining layers on both sides of the active layer, the light confining layers containing Al as the group III element; a group III-V semiconductor buffer layer disposed between the substrate and the clad layer, the buffer layer including a composition graded layer gradually changing the lattice constant, and having a cross hatched step on the surface thereof; and an intermediate layer of group III-V semiconductor disposed between the buffer layer and the clad layer, the intermediate layer containing phosphorous as the group V element. A semiconductor laser of 1 .mu.m band is provided whose substrate and clad layer are lattice mismatched and whose clad layer uses group III-V semiconductor having a wide forbidden band and containing Al as the group III element.