Semiconductor photodetector that causes avalanche multiplication to occur only at photodetector portion located at central portion of mesa structure
    21.
    发明授权
    Semiconductor photodetector that causes avalanche multiplication to occur only at photodetector portion located at central portion of mesa structure 有权
    导致雪崩乘法仅在位于台面结构的中心部分的光电检测器部分的半导体光电检测器

    公开(公告)号:US07875946B2

    公开(公告)日:2011-01-25

    申请号:US11259196

    申请日:2005-10-27

    IPC分类号: H01L31/107

    摘要: In order to improve reliability by preventing edge breakdown in a semiconductor photodetector having a mesa structure such as a mesa APD, the semiconductor photodetector includes a mesa structure formed on a first semiconductor layer of the first conduction type formed on a semiconductor substrate, the mesa structure including a light absorbing layer for absorbing light, an electric field buffer layer for dropping an electric field intensity, an avalanche multiplication layer for causing avalanche multiplication to occur, and a second semiconductor layer of the second conduction type, wherein the thickness of the avalanche multiplication layer at the portion in the vicinity of the side face of the mesa structure is made thinner than the thickness at the central portion of the mesa structure.

    摘要翻译: 为了通过防止具有诸如台面APD的台面结构的半导体光电检测器中的边缘破坏来提高可靠性,半导体光电检测器包括形成在形成在半导体基板上的第一导电类型的第一半导体层上的台面结构,台面结构 包括用于吸收光的光吸收层,用于降低电场强度的电场缓冲层,用于引起雪崩倍增的雪崩倍增层和第二导电类型的第二半导体层,其中雪崩倍增 在台面结构的侧面附近的部分的层的厚度比台面结构的中央部的厚度薄。

    Automatic document feeder and manuscript scanner provided with platen cover with easily operable handle
    22.
    发明申请
    Automatic document feeder and manuscript scanner provided with platen cover with easily operable handle 有权
    自动送纸器和手稿扫描仪配有压盘盖,手柄易于操作

    公开(公告)号:US20050200920A1

    公开(公告)日:2005-09-15

    申请号:US11078520

    申请日:2005-03-14

    IPC分类号: G03G15/00 H04N1/00 H04N1/21

    摘要: An automatic document feeder is mounted on a platen cover, which is located on a housing of a manuscript scanning section and movable relative to the housing to have open and shut states. The automatic document feeder is provided with: a manuscript stacker adapted to have manuscripts stacked on it; an outer frame structure having the manuscript stacker movable to attain the open and shut states; and a handle section provided integrally with the outer frame structure and disposed anteriorly to the manuscript stacker. The space between the manuscript stacker and the platen cover serves as a manuscript discharging section. The handle section is formed in a shape so as to avoid narrowing the entrance for inserting a hand into the manuscript discharging section.

    摘要翻译: 自动送纸器安装在压纸盖上,该盖板位于原稿扫描部分的壳体上,并相对于壳体可移动以具有打开和关闭状态。 自动进纸器设有:一个适合于在其上堆叠手稿的原稿堆垛机; 具有可移动以获得打开和关闭状态的原稿堆叠器的外框架结构; 以及与外框架结构一体地设置并且放置在原稿堆垛机的前方的把手部。 原稿堆垛机和压板盖之间的空间用作原稿放电部分。 手柄部形成为避免将手插入原稿放出部的入口变窄的形状。

    Brass material, brass tube and their production method
    23.
    发明授权
    Brass material, brass tube and their production method 失效
    黄铜材料,黄铜管及其制作方法

    公开(公告)号:US06464810B1

    公开(公告)日:2002-10-15

    申请号:US09529590

    申请日:2000-04-17

    IPC分类号: C22C904

    CPC分类号: C22C9/04 C22F1/08

    摘要: An object is to improve machinability and polishability of a brass material prepared through cold working, particularly in a brass pipe material. Before cold working, by having an &agr; phase making heat treatment step for increasing an area ratio of an &agr; phase, cold ductility can be ensured at the time of cold working. Also, after cold working, by having a &bgr; phase making heat treatment step for increasing an area ratio of a &bgr; phase, a brass material excellent in machinability and polishability can be provided.

    摘要翻译: 目的是提高通过冷加工制备的黄铜材料的机械加工性和抛光性,特别是在黄铜管材料中。 在冷加工之前,通过进行α相制造热处理步骤以增加α相的面积比,在冷加工时可以确保冷延展性。 此外,冷加工后,通过具有增加β相面积比的β相制热处理工序,可以提供切削性和抛光性优异的黄铜材料。

    Original reader, optical module, and optical reading method
    24.
    发明授权
    Original reader, optical module, and optical reading method 有权
    原始阅读器,光学模块和光学读取方法

    公开(公告)号:US08300278B2

    公开(公告)日:2012-10-30

    申请号:US11093489

    申请日:2005-03-30

    摘要: A module 1 movable over the original surface 110 of the original reader 100 has a metal sheet frame 4 disposed in the vicinity of its gravitational center and having a substantially channel-like shape. A first and a second optical systems 2 and 3 and a drive source 6 assembled to be integral with a flat part 40 of the metal sheet frame 4. Thus, a reduced-size, improved quality and improved-accuracy original reader to be used for facsimile devices and image scanners is obtained.

    摘要翻译: 可以在原稿读取器100的原始表面110上移动的模块1具有设置在其重力附近并具有大致通道形状的金属片框架4。 第一和第二光学系统2和3以及驱动源6,其组装成与金属片框架4的平坦部分40成一体。因此,原版读取器的尺寸减小,质量改进和精度更高,用于 获得传真设备和图像扫描仪。

    Semiconductor photodetector and method for manufacturing the same
    25.
    发明申请
    Semiconductor photodetector and method for manufacturing the same 有权
    半导体光电探测器及其制造方法

    公开(公告)号:US20110068428A1

    公开(公告)日:2011-03-24

    申请号:US12926484

    申请日:2010-11-22

    IPC分类号: H01L31/107 H01L31/18

    摘要: In order to improve reliability by preventing an edge breakdown in a semiconductor photodetector having a mesa structure such as a mesa APD, the semiconductor photodetector comprises a mesa structure formed on a first semiconductor layer of the first conduction type formed on a semiconductor substrate, the mesa structure including a light absorbing layer for absorbing light, an electric field buffer layer for dropping an electric field intensity, an avalanche multiplication layer for causing avalanche multiplication to occur, and a second semiconductor layer of the second conduction type, wherein the thickness of the avalanche multiplication layer at the portion in the vicinity of the side face of the mesa structure is made thinner than the thickness at the central portion of the mesa structure.

    摘要翻译: 为了通过防止具有诸如台面APD的台面结构的半导体光电探测器中的边缘击穿来提高可靠性,半导体光电检测器包括形成在形成在半导体衬底上的第一导电类型的第一半导体层上的台面结构,台面 包括用于吸收光的光吸收层的结构,用于降低电场强度的电场缓冲层,用于引起雪崩倍增的雪崩倍增层和第二导电类型的第二半导体层,其中雪崩的厚度 在台面结构的侧面附近的部分的倍增层比台面结构的中央部分的厚度薄。

    Lead-free free-machining brass having improved castability
    26.
    发明申请
    Lead-free free-machining brass having improved castability 有权
    无铅自由加工黄铜具有改进的浇注性能

    公开(公告)号:US20090263272A1

    公开(公告)日:2009-10-22

    申请号:US12308966

    申请日:2008-10-01

    申请人: Toru Uchida

    发明人: Toru Uchida

    CPC分类号: C22C9/04 B22C9/22

    摘要: There is provided a brass free from lead (Pb) and possessing excellent machinability, castability, mechanical properties and other properties. A brass consisting of not less than 55% by weight and not more than 75% by weight of copper (Cu), not less than 0.3% by weight and not more than 4.0% by weight of bismuth (Bi), and y % by weight of boron (B) and x % by weight of silicon (Si), y and x satisfying the following requirements: 0≦x≦2.0, 0≦y≦0.3, and y>−0.15x+0.015ab, wherein a is 0.2 when Bi is 0.3% by weight ≦Bi

    摘要翻译: 提供了不含铅(Pb)的黄铜,具有优异的机械加工性,浇铸性,机械性能等特性。 由不少于55重量%且不超过75重量%的铜(Cu)组成的黄铜,不小于0.3重量%且不大于4.0重量%的铋(Bi),y%由 满足以下要求的硼(B)重量和x重量%的硅(Si),y和x:0 <= x <= 2.0,0 <= y <= 0.3,y> -0.15x + 0.015ab 其中当Bi为0.3重量%<= Bi <0.75重量%时a为0.2; 0.85当Bi为0.75重量%<= Bi <1.5重量%时; 当Bi为1.5重量%<= Bi <= 4.0重量%时,当锌(Zn)的表观含量不小于37%且小于41%时,b为1; 和0.75当Zn的表观含量不小于41%且不大于45%时,其余由Zn和不可避免的杂质组成,浇铸性以及例如机械加工性和机械性能都优异。

    Original reader
    28.
    发明授权

    公开(公告)号:US06999210B2

    公开(公告)日:2006-02-14

    申请号:US09983917

    申请日:2001-10-26

    申请人: Toru Uchida

    发明人: Toru Uchida

    IPC分类号: H04N1/04

    摘要: An illuminant for converting ultraviolet rays directly radiated outside from an opening of a glass tube into visible light is disposed outside a light source. The light source and the illuminant are disposed in approximately symmetrical positions sandwiching a vertical surface orthogonal to a moving direction of the light source, that is, a direction of Y and including an original reading position.

    Drive mechanism for image scanner apparatus
    29.
    发明申请
    Drive mechanism for image scanner apparatus 有权
    图像扫描仪装置的驱动机构

    公开(公告)号:US20050145697A1

    公开(公告)日:2005-07-07

    申请号:US11028696

    申请日:2005-01-04

    摘要: An image scanner apparatus is composed of a housing, an optical unit positioned in the housing, a drive mechanism driving the optical unit. The drive mechanism includes first and second wires connected to the optical unit, and a drive motor driving the first and second wires. One end of the first wire is connected to a first fixture, and one end of the second wire is connected to a second fixture. The first fixture is secured to a first wire-retaining member positioned outside the housing at a first securing position, and the first wire-retaining member retains the first fixture so that the first securing position is adjustable.

    摘要翻译: 图像扫描仪装置由壳体,位于壳体内的光学单元,驱动光学单元的驱动机构构成。 驱动机构包括连接到光学单元的第一和第二线以及驱动第一和第二线的驱动马达。 第一线的一端连接到第一固定装置,第二线的一端连接到第二固定装置。 第一固定件固定在第一固定位置处定位在壳体外部的第一线固定构件上,并且第一线固定构件保持第一固定件,使得第一固定位置是可调节的。

    Semiconductor laser with lattice mismatch
    30.
    发明授权
    Semiconductor laser with lattice mismatch 失效
    具有晶格失配的半导体激光器

    公开(公告)号:US5751753A

    公开(公告)日:1998-05-12

    申请号:US681336

    申请日:1996-07-23

    申请人: Toru Uchida

    发明人: Toru Uchida

    摘要: A semiconductor laser having: a group III-V semiconductor substrate; a group III-V semiconductor clad layer disposed on the substrate with a lattice mismatch of 0.5 % or more; group III-V semiconductor light propagation layers disposed on the clad layer, including an active layer and light confining layers on both sides of the active layer, the light confining layers containing Al as the group III element; a group III-V semiconductor buffer layer disposed between the substrate and the clad layer, the buffer layer including a composition graded layer gradually changing the lattice constant, and having a cross hatched step on the surface thereof; and an intermediate layer of group III-V semiconductor disposed between the buffer layer and the clad layer, the intermediate layer containing phosphorous as the group V element. A semiconductor laser of 1 .mu.m band is provided whose substrate and clad layer are lattice mismatched and whose clad layer uses group III-V semiconductor having a wide forbidden band and containing Al as the group III element.

    摘要翻译: 一种具有:III-V族半导体衬底的半导体激光器; 设置在所述基板上的晶格失配为0.5%以上的III-V族半导体包层; 设置在包层上的III-V族半导体光传播层,包括有源层和在有源层的两侧上的限光层,光限制层包含Al作为III族元素; 设置在所述基板和所述包层之间的III-V族半导体缓冲层,所述缓冲层包括逐渐改变晶格常数的组成分级层,并且在其表面上具有交叉阴影的步骤; 以及设置在缓冲层和包层之间的III-V族半导体的中间层,中间层含有磷作为V族元素。 提供了1μm的半导体激光器,其衬底和包层是晶格失配的,并且其包层使用具有宽禁带的III-V族半导体并且包含Al作为III族元素。