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    GALLIUM NITRIDE-BASED SEMICONDUCTOR LASER DIODE
    21.
    发明申请
    GALLIUM NITRIDE-BASED SEMICONDUCTOR LASER DIODE 有权
    基于氮化镓的半导体激光二极管

    公开(公告)号：US20110013657A1

    公开(公告)日：2011-01-20

    申请号：US12837143

    申请日：2010-07-15

    申请人： Takamichi SUMITOMO ,  Yohei ENYA ,  Yusuke YOSHIZUMI ,  Masaki UENO ,  Katsushi AKITA ,  Takashi KYONO

    发明人： Takamichi SUMITOMO ,  Yohei ENYA ,  Yusuke YOSHIZUMI ,  Masaki UENO ,  Katsushi AKITA ,  Takashi KYONO

    IPC分类号： H01S5/323

    CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/2004 ,  H01S5/2009 ,  H01S5/3202 ,  H01S2302/00

    摘要： Provided is a III-nitride semiconductor laser diode capable of lasing to emit light of not less than 500 nm with use of a semipolar plane. Since an active layer 29 is provided so as to generate light at the wavelength of not less than 500 nm, the wavelength of light to be confined into a core semiconductor region 19 is a long wavelength. A first optical guide layer 27 is provided with a two-layer structure, and a second optical guide layer 31 is provided with a two-layer structure. A material of a cladding layer 21 comprised of at least either of AlGaN and InAlGaN is different from the III-nitride semiconductor, and the thickness D15 of a first epitaxial semiconductor region 15 is larger than the thickness D19 of the core semiconductor region 19; however, the misfit dislocation densities at first to third interfaces J1, J2 and J3 are not more than 1×106 cm−1, thereby preventing lattice relaxation from occurring in the semiconductor layers at these interfaces J1, J2 and J3 because of the c-plane that acts as a slip plane.

    摘要翻译： 提供了能够利用半极性平面发光的不少于500nm的光的III族氮化物半导体激光二极管。 由于设置有源层29以产生波长不小于500nm的光，所以被限制在芯半导体区域19中的光的波长是长波长。 第一光导层27设置有两层结构，第二光导层31设置有两层结构。 由AlGaN和InAlGaN中的至少一个组成的包覆层21的材料与III族氮化物半导体不同，第一外延半导体区域15的厚度D15大于芯半导体区域19的厚度D19; 然而，第一至第三界面J1，J2和J3处的失配位错密度不大于1×106cm-1，从而防止在这些界面J1，J2和J3处的半导体层中发生晶格弛豫，因为c- 作为滑行平面的飞机。

    III-NITRIDE SEMICONDUCTOR LASER DIODE
    22.
    发明申请
    III-NITRIDE SEMICONDUCTOR LASER DIODE 有权
    III-NITRIDE SEMICONDUCTOR激光二极管

    公开(公告)号：US20120128016A1

    公开(公告)日：2012-05-24

    申请号：US13328622

    申请日：2011-12-16

    申请人： Masahiro ADACHI ,  Shinji TOKUYAMA ,  Yohei ENYA ,  Takashi KYONO ,  Yusuke YOSHIZUMI ,  Katsushi AKITA ,  Masaki UENO ,  Koji KATAYAMA ,  Takatoshi IKEGAMI ,  Takao NAKAMURA

    发明人： Masahiro ADACHI ,  Shinji TOKUYAMA ,  Yohei ENYA ,  Takashi KYONO ,  Yusuke YOSHIZUMI ,  Katsushi AKITA ,  Masaki UENO ,  Koji KATAYAMA ,  Takatoshi IKEGAMI ,  Takao NAKAMURA

    IPC分类号： H01S5/32

    CPC分类号： H01S5/2004 ,  B82Y20/00 ,  H01S5/22 ,  H01S5/309 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2301/18 ,  H01S2302/00

    摘要： Provided is a III-nitride semiconductor laser diode which is capable of lasing at a low threshold. A support base has a semipolar or nonpolar primary surface. The c-axis Cx of a III-nitride is inclined relative to the primary surface. An n-type cladding region and a p-type cladding region are provided above the primary surface of the support base. A core semiconductor region is provided between the n-type cladding region and the p-type cladding region. The core semiconductor region includes a first optical guide layer, an active layer, and a second optical guide layer. The active layer is provided between the first optical guide layer and the second optical guide layer. The thickness of the core semiconductor region is not less than 0.5 μm. This structure allows the confinement of light into the core semiconductor region without leakage of light into the support base, and therefore enables reduction in threshold current.

    摘要翻译： 提供能够以低阈值激光的III族氮化物半导体激光二极管。 支撑底座具有半极性或非极性主表面。 III族氮化物的c轴Cx相对于主表面倾斜。 在支撑基体的主表面上方设置有n型包层区域和p型包层区域。 芯型半导体区域设置在n型包层区域和p型包层区域之间。 芯半导体区域包括第一光导层，有源层和第二光导层。 有源层设置在第一光导层和第二光导层之间。 芯半导体区域的厚度不小于0.5μm。 这种结构允许将光限制在芯半导体区域中，而不会将光泄漏到支撑基底中，因此能够降低阈值电流。

    III-NITRIDE SEMICONDUCTOR OPTICAL DEVICE AND EPITAXIAL SUBSTRATE
    23.
    发明申请
    III-NITRIDE SEMICONDUCTOR OPTICAL DEVICE AND EPITAXIAL SUBSTRATE 有权

    公开(公告)号：US20110114916A1

    公开(公告)日：2011-05-19

    申请号：US12836117

    申请日：2010-07-14

    申请人： Yusuke YOSHIZUMI ,  Yohei ENYA ,  Katsushi AKITA ,  Masaki UENO ,  Takashi KYONO ,  Takao NAKAMURA

    发明人： Yusuke YOSHIZUMI ,  Yohei ENYA ,  Katsushi AKITA ,  Masaki UENO ,  Takashi KYONO ,  Takao NAKAMURA

    IPC分类号： H01L31/0352

    CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/22 ,  H01S5/3054 ,  H01S5/3202

    摘要： A III-nitride semiconductor optical device has a support base comprised of a III-nitride semiconductor, an n-type gallium nitride based semiconductor layer, a p-type gallium nitride based semiconductor layer, and an active layer. The support base has a primary surface at an angle with respect to a reference plane perpendicular to a reference axis extending in a c-axis direction of the III-nitride semiconductor. The n-type gallium nitride based semiconductor layer is provided over the primary surface of the support base. The p-type gallium nitride based semiconductor layer is doped with magnesium and is provided over the primary surface of the support base. The active layer is provided between the n-type gallium nitride based semiconductor layer and the p-type gallium nitride based semiconductor layer over the primary surface of the support base. The angle is in the range of not less than 40° and not more than 140°. The primary surface demonstrates either one of semipolar nature and nonpolar nature. The p-type gallium nitride based semiconductor layer contains carbon as a p-type dopant. A carbon concentration of the p-type gallium nitride based semiconductor layer is not less than 2×1016 cm−3, and the carbon concentration of the p-type gallium nitride based semiconductor layer is not more than 1×1019 cm−3.

    摘要翻译： III族氮化物半导体光学器件具有由III族氮化物半导体，n型氮化镓系半导体层，p型氮化镓系半导体层和有源层构成的支撑基体。 支撑基座具有相对于垂直于在III族氮化物半导体的c轴方向上延伸的参考轴线的参考平面成一定角度的主表面。 n型氮化镓基半导体层设置在支撑基体的主表面上。 p型氮化镓基半导体层掺杂有镁并且设置在载体基体的主表面上。 有源层设置在支撑基体的主表面上的n型氮化镓基半导体层和p型氮化镓基半导体层之间。 该角度在不小于40°且不大于140°的范围内。 主表面显示出半极性和非极性之一。 p型氮化镓系半导体层含有碳作为p型掺杂剂。 p型氮化镓系半导体层的碳浓度为2×1016cm-3以上，p型氮化镓系半导体层的碳浓度为1×1019cm-3以下。

    III-INTRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD OF FABRICATING THE III-NITRIDE SEMICONDUCTOR LASER DEVICE
    29.
    发明申请
    III-INTRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD OF FABRICATING THE III-NITRIDE SEMICONDUCTOR LASER DEVICE 审中-公开
    III-INTRIDE SEMICONDUCTOR LASER DEVICE，以及​​制造III-NITRIDE SEMICONDUCTOR LASER DEVICE的方法

    公开(公告)号：US20110075695A1

    公开(公告)日：2011-03-31

    申请号：US12831557

    申请日：2010-07-07

    申请人： Yusuke YOSHIZUMI ,  Yohei ENYA ,  Takashi KYONO ,  Masahiro ADACHI ,  Shinji TOKUYAMA ,  Takamichi SUMITOMO ,  Masaki UENO ,  Takatoshi IKEGAMI ,  Koji KATAYAMA ,  Takao NAKAMURA

    发明人： Yusuke YOSHIZUMI ,  Yohei ENYA ,  Takashi KYONO ,  Masahiro ADACHI ,  Shinji TOKUYAMA ,  Takamichi SUMITOMO ,  Masaki UENO ,  Takatoshi IKEGAMI ,  Koji KATAYAMA ,  Takao NAKAMURA

    IPC分类号： H01S5/323 ,  H01L33/00 ,  H01S5/30

    CPC分类号： H01S5/3202 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/0287 ,  H01S5/1085 ,  H01S5/16 ,  H01S5/2009 ,  H01S5/2201 ,  H01S5/3213 ,  H01S5/34333 ,  H01S2301/14

    摘要： In a III-nitride semiconductor laser device, a laser structure includes a support base with a semipolar primary surface comprised of a III-nitride semiconductor, and a semiconductor region provided on the semipolar primary surface of the support base. First and second dielectric multilayer films for an optical cavity of the nitride semiconductor laser device are provided on first and second end faces of the semiconductor region, respectively. The semiconductor region includes a first cladding layer of a first conductivity type gallium nitride-based semiconductor, a second cladding layer of a second conductivity type gallium nitride-based semiconductor, and an active layer provided between the first cladding layer and the second cladding layer. The first cladding layer, the second cladding layer, and the active layer are arranged in an axis normal to the semipolar primary surface. A c+ axis vector indicating a direction of the axis of the III-nitride semiconductor of the support base is inclined at an angle in the range of not less than 45 degrees and not more than 80 degrees or in the range of not less than 100 degrees and not more than 135 degrees toward a direction of any one crystal axis of the m- and a-axes of the III-nitride semiconductor with respect to a normal vector indicating a direction of the normal axis. The first and second end faces intersect with a reference plane defined by the normal axis and the one crystal axis of the hexagonal III-nitride semiconductor. The c+ axis vector makes an acute angle with a waveguide vector indicating a direction from the second end face to the first end face. A thickness of the first dielectric multilayer film is smaller than a thickness of the second dielectric multilayer film.

    摘要翻译： 在III族氮化物半导体激光器件中，激光器结构包括具有由III族氮化物半导体构成的半极性主表面的支撑基底和设置在支撑基底的半极性主表面上的半导体区域。 分别在半导体区域的第一和第二端面上设置用于氮化物半导体激光器件的光腔的第一和第二电介质多层膜。 半导体区域包括第一导电型氮化镓基半导体的第一包层，第二导电型氮化镓基半导体的第二包层和设置在第一包层和第二包层之间的有源层。 第一覆层，第二覆层，有源层配置在与半极性主面垂直的轴上。 指示支撑基座的III族氮化物半导体的<0001轴的方向的c +轴矢量以不小于45度且不大于80度的范围内的角度倾斜，或者在不小于 相对于表示法线轴方向的法线矢量，朝向III族氮化物半导体的m轴和a轴的任意一个晶轴的方向为100度以上且135度以下。 第一和第二端面与由正常轴和六边形III族氮化物半导体的一个晶体轴限定的参考平面相交。 c +轴矢量与表示从第二端面到第一端面的方向的波导矢量成锐角。 第一电介质多层膜的厚度小于第二电介质多层膜的厚度。

    III-Nitride semiconductor laser device, and method of fabricating the III-Nitride semiconductor laser device
    30.
    发明申请
    III-Nitride semiconductor laser device, and method of fabricating the III-Nitride semiconductor laser device 审中-公开
    III型氮化物半导体激光器件及其制造方法

    公开(公告)号：US20110075694A1

    公开(公告)日：2011-03-31

    申请号：US12831566

    申请日：2010-07-07

    申请人： Yusuke YOSHIZUMI ,  Yohei ENYA ,  Takashi KYONO ,  Masahiro ADACHI ,  Shinji TOKUYAMA ,  Takamichi SUMITOMO ,  Masaki UENO ,  Takatoshi IKEGAMI ,  Koji KATAYAMA ,  Takao NAKAMURA

    发明人： Yusuke YOSHIZUMI ,  Yohei ENYA ,  Takashi KYONO ,  Masahiro ADACHI ,  Shinji TOKUYAMA ,  Takamichi SUMITOMO ,  Masaki UENO ,  Takatoshi IKEGAMI ,  Koji KATAYAMA ,  Takao NAKAMURA

    IPC分类号： H01S5/323 ,  H01L21/78

    CPC分类号： H01S5/3202 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/028 ,  H01S5/34333

    摘要： In a III-nitride semiconductor laser device, a laser structure includes a support base with a semipolar primary surface comprised of a III-nitride semiconductor, and a semiconductor region provided on the semipolar primary surface of the support base. First and second dielectric multilayer films for an optical cavity of the nitride semiconductor laser device are provided on first and second end faces of the semiconductor region, respectively. The semiconductor region includes a first cladding layer of a first conductivity type gallium nitride-based semiconductor, a second cladding layer of a second conductivity type gallium nitride-based semiconductor, and an active layer provided between the first cladding layer and the second cladding layer. The first cladding layer, the second cladding layer, and the active layer are arranged in an axis normal to the semipolar primary surface. A c+ axis vector indicating a direction of the axis of the III-nitride semiconductor of the support base is inclined at an angle in the range of not less than 45 degrees and not more than 80 degrees or in the range of not less than 100 degrees and not more than 135 degrees toward a direction of any one crystal axis of the m- and a-axes of the III-nitride semiconductor with respect to a normal vector indicating a direction of the normal axis. The first and second end faces intersect with a reference plane defined by the normal axis and the one crystal axis of the hexagonal III-nitride semiconductor. The c+ axis vector makes an acute angle with a waveguide vector indicating a direction from the second end face to the first end face. A thickness of the second dielectric multilayer film is smaller than a thickness of the first dielectric multilayer film.

    摘要翻译： 在III族氮化物半导体激光器件中，激光器结构包括具有由III族氮化物半导体构成的半极性主表面的支撑基底和设置在支撑基底的半极性主表面上的半导体区域。 分别在半导体区域的第一和第二端面上设置用于氮化物半导体激光器件的光腔的第一和第二电介质多层膜。 半导体区域包括第一导电型氮化镓基半导体的第一包层，第二导电型氮化镓基半导体的第二包层和设置在第一包层和第二包层之间的有源层。 第一覆层，第二覆层，有源层配置在与半极性主面垂直的轴上。 指示支撑基座的III族氮化物半导体的<0001轴的方向的c +轴矢量以不小于45度且不大于80度的范围内的角度倾斜，或者在不小于 相对于表示法线轴方向的法线矢量，朝向III族氮化物半导体的m轴和a轴的任意一个晶轴的方向为100度以上且135度以下。 第一和第二端面与由正常轴和六边形III族氮化物半导体的一个晶体轴限定的参考平面相交。 c +轴矢量与表示从第二端面到第一端面的方向的波导矢量成锐角。 第二电介质多层膜的厚度小于第一电介质多层膜的厚度。