公开(公告)号：US20070126804A1

公开(公告)日：2007-06-07

申请号：US11483721

申请日：2006-07-11

申请人： Dong-sik Shim ,  Hyung Choi ,  Yong-seop Yoon ,  Chang-seung Lee

发明人： Dong-sik Shim ,  Hyung Choi ,  Yong-seop Yoon ,  Chang-seung Lee

IPC分类号： B41J2/045

CPC分类号： B41J2/14129 ,  B41J2/1408

摘要： Provided is a thermal inkjet printhead. The inkjet printhead includes a substrate; an insulating layer formed on the substrate; a heater formed on the insulating layer and an electrode to apply current to the heater; a chamber layer that is stacked on the insulating layer and includes an ink chamber; a nozzle layer that is stacked on the chamber layer and includes a nozzle; and at least a heat transfer layer that is formed inside the insulating layer and dissipates heat generated in by the heater toward the substrate.

摘要翻译： 提供了热喷墨打印头。 喷墨打印头包括基板; 形成在所述基板上的绝缘层; 形成在绝缘层上的加热器和用于向加热器施加电流的电极; 层叠在所述绝缘层上并且包括墨水室的室层; 喷嘴层，其层叠在所述室层上并且包括喷嘴; 以及形成在所述绝缘层内部的至少一层传热层，并且将由所述加热器产生的热量散发到所述基板。

公开(公告)号：US07416675B2

公开(公告)日：2008-08-26

申请号：US11453012

申请日：2006-06-15

申请人： Dong-sik Shim ,  Hyung Choi ,  Yong-seop Yoon

发明人： Dong-sik Shim ,  Hyung Choi ,  Yong-seop Yoon

IPC分类号： G01D15/00

CPC分类号： B41J2/1603 ,  B41J2/1626 ,  B41J2/1635 ,  B41J2/1639 ,  B41J2/1643

摘要： A method of fabricating inkjet print heads usable in an ink jet printer. The method of fabricating ink jet print heads includes preparing a plurality of ink jet print heads on a wafer while forming sub sidewalls around the ink jet print heads when the ink jet print heads are being prepared, attaching protection films onto the sub sidewalls of the wafer and the ink jet print heads, and dicing the ink jet print heads and detaching the individual ink jet print heads from the wafer. In the method, the ink jet print heads are diced in a wafer unit. Particularly, connect pads of the ink jet print heads can be prevented from being contaminated by the protection films.

摘要翻译： 一种制造可用于喷墨打印机的喷墨打印头的方法。 制造喷墨打印头的方法包括：当准备喷墨打印头时，在晶片上准备多个喷墨打印头，同时在喷墨打印头周围形成副侧壁，将保护膜附着在晶片的子侧壁上 和喷墨打印头，并且对喷墨打印头进行切割并将各个喷墨打印头从晶片上分离出来。 在该方法中，喷墨打印头在晶片单元中切割。 特别地，可以防止喷墨打印头的连接垫被保护膜污染。

公开(公告)号：US20050136636A1

公开(公告)日：2005-06-23

申请号：US11012312

申请日：2004-12-16

申请人： Dong-sik Shim ,  Chan-bong Jun ,  Hyung Choi ,  Hoon Song

发明人： Dong-sik Shim ,  Chan-bong Jun ,  Hyung Choi ,  Hoon Song

IPC分类号： H01L21/288 ,  C25D7/12 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L21/44

CPC分类号： H01L21/76885 ,  H01L21/2885 ,  H01L24/11 ,  H01L24/12 ,  H01L2224/0401 ,  H01L2224/0603 ,  H01L2224/13099 ,  H01L2224/1403 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/181 ,  H01L2924/00

摘要： Disclosed is a method for forming a plurality of metal structures having different heights on a semiconductor substrate. The disclosed method for manufacturing a metal structure having different heights includes: forming a plurality of seed layers, to have heights corresponding to the metal structure to be formed, on a semiconductor substrate so that those layers can be electrically separated, performing a plating process using a plating mold, and applying different currents to the respective seed layers so that the plating thickness can be adjusted for each of the seed layers. Accordingly, a plurality of metal structures having different heights can be obtained by a plating mold forming process and a plating process that are performed just once, respectively.

摘要翻译： 公开了一种在半导体衬底上形成具有不同高度的多个金属结构体的方法。 所公开的制造具有不同高度的金属结构体的方法包括：在半导体衬底上形成多个种子层以具有与要形成的金属结构相对应的高度，使得这些层可以电分离，使用 电镀模具，并且向相应的种子层施加不同的电流，使得可以针对每个种子层调整镀层厚度。 因此，可以通过分别进行一次的电镀模具成型工序和电镀工序来获得具有不同高度的多个金属结构体。

公开(公告)号：US07893442B2

公开(公告)日：2011-02-22

申请号：US11702489

申请日：2007-02-06

申请人： Dong-sik Shim ,  Hyung Choi ,  Young-hoon Min

发明人： Dong-sik Shim ,  Hyung Choi ,  Young-hoon Min

IPC分类号： H01L29/15 ,  H01L29/66 ,  H01L21/44 ,  H01L21/28

CPC分类号： H01L29/872 ,  H01L29/417

摘要： Provided are a schottky diode having an appropriate low breakdown voltage to be used in a radio frequency identification (RFID) tag and a method for fabricating the same. The schottky diode includes a silicon substrate having a structure in which an N-type well is formed on a P-type substrate, an insulating layer surrounding a circumference of the N-type well so as to electrically separate the N-type well from the P-type substrate, an N+ doping layer partly formed in a portion of a region of an upper surface of the N-type well, an N− doping layer partly formed in the other portion of a region of the upper surface of the N-type well, a cathode formed on the N+ doping layer, and an anode formed on the N− doping layer.

摘要翻译： 提供了在射频识别（RFID）标签中使用具有适当的低击穿电压的肖特基二极管及其制造方法。 肖特基二极管包括具有在P型衬底上形成N型阱的结构的硅衬底，围绕N型阱的周围的绝缘层，以将N型阱与 P型衬底，部分地形成在N型阱的上表面的一部分区域中的N +掺杂层，部分地形成在N型阱的上表面的区域的另一部分中的N掺杂层， 类型良好，形成在N +掺杂层上的阴极和形成在N掺杂层上的阳极。

公开(公告)号：US07703891B2

公开(公告)日：2010-04-27

申请号：US11471490

申请日：2006-06-21

申请人： Dong-sik Shim ,  Hyung Choi ,  Min-soo Kim

发明人： Dong-sik Shim ,  Hyung Choi ,  Min-soo Kim

IPC分类号： B41J2/05

CPC分类号： B41J2/14129 ,  B41J2/1412

摘要： A heater to control an ink bubble, and an inkjet printhead having the heater. The heater has different resistances according to portions thereof.

摘要翻译： 用于控制墨水泡的加热器和具有加热器的喷墨打印头。 加热器根据其部分具有不同的电阻。

公开(公告)号：US20070278608A1

公开(公告)日：2007-12-06

申请号：US11702489

申请日：2007-02-06

申请人： Dong-sik Shim ,  Hyung Choi ,  Young-hoon Min

发明人： Dong-sik Shim ,  Hyung Choi ,  Young-hoon Min

IPC分类号： H01L29/861 ,  H01L21/44

CPC分类号： H01L29/872 ,  H01L29/417

摘要： Provided are a schottky diode having an appropriate low breakdown voltage to be used in a radio frequency identification (RFID) tag and a method for fabricating the same. The schottky diode includes a silicon substrate having a structure in which an N-type well is formed on a P-type substrate, an insulating layer surrounding a circumference of the N-type well so as to electrically separate the N-type well from the P-type substrate, an N+ doping layer partly formed in a portion of a region of an upper surface of the N-type well, an N− doping layer partly formed in the other portion of a region of the upper surface of the N-type well, a cathode formed on the N+ doping layer, and an anode formed on the N− doping layer.

摘要翻译： 提供了在射频识别（RFID）标签中使用具有适当的低击穿电压的肖特基二极管及其制造方法。 肖特基二极管包括具有在P型衬底上形成N型阱的结构的硅衬底，围绕N型阱的周围的绝缘层，以将N型阱与 P型衬底，部分地形成在N型阱的上表面的一部分区域中的N +掺杂层，部分地形成在N型阱的上表面的区域的另一部分中的N掺杂层， 类型良好，形成在N +掺杂层上的阴极和形成在N掺杂层上的阳极。

公开(公告)号：US07506442B2

公开(公告)日：2009-03-24

申请号：US11423982

申请日：2006-06-14

申请人： Dong-sik Shim ,  Hyung Choi

发明人： Dong-sik Shim ,  Hyung Choi

IPC分类号： B23P17/00 ,  G01D15/00

CPC分类号： B41J2/14129 ,  B41J2/14137 ,  B41J2/1603 ,  B41J2/1626 ,  B41J2/1631 ,  B41J2/1639 ,  B41J2/1643 ,  Y10T29/49083 ,  Y10T29/49126 ,  Y10T29/49128 ,  Y10T29/4913 ,  Y10T29/49401

摘要： A method of fabricating an inkjet printhead. The method of fabricating an inkjet printhead includes sequentially forming an insulating layer, a heater, and an electrode on a substrate and forming a passivation layer on the insulating layer to cover the heater and the electrode; forming a trench that exposes the substrate by sequentially etching the passivation layer and the insulating layer; forming a sacrificial layer to form an ink chamber on the passivation layer to fill the trench; forming a seed layer to provide a plating on the sacrificial layer and the passivation layer; forming a nozzle mold on the seed layer positioned over the heater; forming a plating layer on the seed layer to a predetermined thickness; forming an ink feed hole by etching a rear surface of the substrate to expose the sacrificial layer which is filled in the trench; forming a nozzle by sequentially removing the nozzle mold and the seed layer positioned under the nozzle mold; and forming the ink chamber by removing the sacrificial layer which is exposed by the nozzle and the ink feed hole.

摘要翻译： 一种制造喷墨打印头的方法。 制造喷墨打印头的方法包括在基板上依次形成绝缘层，加热器和电极，并在绝缘层上形成钝化层以覆盖加热器和电极; 形成通过依次蚀刻钝化层和绝缘层而使衬底暴露的沟槽; 形成牺牲层以在所述钝化层上形成墨水腔以填充所述沟槽; 形成籽晶层以在牺牲层和钝化层上提供电镀; 在位于加热器上方的种子层上形成喷嘴模具; 在种子层上形成预定厚度的镀层; 通过蚀刻所述衬底的后表面以暴露所述沟槽中填充的所述牺牲层来形成供墨孔; 通过依次去除位于喷嘴模具下方的喷嘴模具和籽晶层形成喷嘴; 以及通过去除由喷嘴和供墨孔暴露的牺牲层来形成墨室。

公开(公告)号：US20060186421A1

公开(公告)日：2006-08-24

申请号：US11356125

申请日：2006-02-17

申请人： Dong-sik Shim ,  Young-hoon Min ,  Il-jong Song ,  Ja-nam Ku ,  Hyung Choi

发明人： Dong-sik Shim ,  Young-hoon Min ,  Il-jong Song ,  Ja-nam Ku ,  Hyung Choi

IPC分类号： H01L33/00

CPC分类号： H01L29/872

摘要： A low leakage Schottky diode and fabrication method thereof. The Schottky diode includes a n-type semiconductor; an anode having a circular periphery formed in a region above the n-type semiconductor; and a cathode formed in a region above the n-type semiconductor and having a pattern surrounding and set apart from the outer periphery of the anode. Because there are no edges at the anode and cathode interface, leakage current is minimized.

摘要翻译： 一种低泄漏肖特基二极管及其制造方法。 肖特基二极管包括n型半导体; 具有形成在n型半导体上方的区域的圆形周边的阳极; 以及阴极，形成在n型半导体上方的区域中，并且具有围绕并与阳极的外周隔开的图案。 因为在阳极和阴极界面处没有边缘，所以泄漏电流被最小化。

公开(公告)号：US20060181824A1

公开(公告)日：2006-08-17

申请号：US11337572

申请日：2006-01-24

申请人： Dong-sik Shim ,  Ja-nam Ku ,  Young-hoon Min ,  Il-jong Song ,  Hyung Choi

发明人： Dong-sik Shim ,  Ja-nam Ku ,  Young-hoon Min ,  Il-jong Song ,  Hyung Choi

IPC分类号： H02H9/00

CPC分类号： H01L27/0814 ,  H01L27/095 ,  H01L29/872

摘要： A semiconductor device using schottky diodes for removing noise, a fabrication method, and an electrostatic discharge prevention device are provided. The semiconductor device includes a P-well substrate; insulation layers deposited on etched regions of the substrate; an N-well layer deposited on an etched region of the P-well substrate between the insulation layers; P+ type implants injected to a first region and a second region of the N-well layer; and first and second metals formed in schottky contact on the first and second regions, respectively. The method includes etching away regions of a P-well substrate and depositing an insulation substance; etching away the P-well substrate and depositing the insulation substance between the insulation layers to create an N-well layer; injecting P+ type implants to a first region and a second region of the N-well layer; and forming first and second metals in schottky contact on the first and second regions, respectively.

摘要翻译： 提供了一种使用用于去除噪声的肖特基二极管的半导体器件，制造方法和静电放电防止装置。 半导体器件包括P阱衬底; 沉积在衬底的蚀刻区域上的绝缘层; 在所述绝缘层之间沉积在所述P阱衬底的蚀刻区域上的N阱层; 注射到N阱层的第一区域和第二区域的P + 以及分别在第一和第二区域上以肖特基接触形成的第一和第二金属。 该方法包括蚀刻掉P阱衬底的区域并沉积绝缘物质; 蚀刻P阱衬底并将绝缘物质沉积在绝缘层之间以产生N阱层; 将P + SUP +型植入物注入N阱层的第一区域和第二区域; 以及分别在所述第一和第二区域上形成肖特基接触的第一和第二金属。

公开(公告)号：US07382035B2

公开(公告)日：2008-06-03

申请号：US11356125

申请日：2006-02-17

申请人： Dong-sik Shim ,  Young-hoon Min ,  Il-jong Song ,  Ja-nam Ku ,  Hyung Choi

发明人： Dong-sik Shim ,  Young-hoon Min ,  Il-jong Song ,  Ja-nam Ku ,  Hyung Choi

IPC分类号： H01L29/47

CPC分类号： H01L29/872

摘要： A low leakage Schottky diode and fabrication method thereof. The Schottky diode includes a n-type semiconductor; an anode having a circular periphery formed in a region above the n-type semiconductor; and a cathode formed in a region above the n-type semiconductor and having a pattern surrounding and set apart from the outer periphery of the anode. Because there are no edges at the anode and cathode interface, leakage current is minimized.

摘要翻译： 一种低泄漏肖特基二极管及其制造方法。 肖特基二极管包括n型半导体; 具有形成在n型半导体上方的区域的圆形周边的阳极; 以及阴极，形成在n型半导体上方的区域中，并且具有围绕并与阳极的外周隔开的图案。 因为在阳极和阴极界面处没有边缘，所以泄漏电流被最小化。