公开(公告)号：US20060009575A1

公开(公告)日：2006-01-12

申请号：US10533302

申请日：2003-10-27

申请人： Akira Nakashima

发明人： Akira Nakashima

IPC分类号： C08G77/06 ,  C04B41/49 ,  C09D183/04

CPC分类号： H01L21/02126 ,  C08G77/08 ,  C09D183/04 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/316

摘要： The present invention relates to a coating liquid for forming an amorphous silica-based coating film with a low dielectric constant of 2.5 or below and the Young's modulus of 6.0 GPa or more and having excellent hydrophobic property, and to a method of preparing the same. The coating liquid may contain a silicon compound obtained by hydrolyzing tetraalkyl ortho silicate (TAOS) and specific alkoxysilane (AS) in the presence of tetraalkyl ammonium hydroxide (TAAOH), or may contain a silicon compound obtained by hydrolyzing or partially hydrolyzing tetraalkyl ortho silicate (TAOS) in the presence of tetraalkyl ammonium hydroxide (TAAOH), mixing the reaction product with specific alkoxysilane or a hydrolysate or a partial hydrolysate thereof, and hydrolyzing all or a portion of the mixture according to the necessity. In addition, the coating liquid is prepared by mixing components described above at a specific ratio and under specific process conditions.

摘要翻译： 本发明涉及一种低介电常数为2.5以下，杨氏模量为6.0GPa以上，疏水性优异的无定形二氧化硅系涂膜用涂布液及其制备方法。 涂布液可以含有通过在四烷基氢氧化铵（TAAOH）的存在下水解四烷基原硅酸盐（TAOS）和特定烷氧基硅烷（AS））而获得的硅化合物，或者可以含有通过水解或部分水解原硅酸四烷基酯 TAOS）在四烷基氢氧化铵（TAAOH）的存在下，将反应产物与特定的烷氧基硅烷或其水解产物或其部分水解产物混合，并根据需要水解全部或一部分混合物。 此外，通过以特定比例和特定工艺条件混合上述组分来制备涂布液。

公开(公告)号：US06802928B2

公开(公告)日：2004-10-12

申请号：US10397957

申请日：2003-03-26

申请人： Akira Nakashima

发明人： Akira Nakashima

IPC分类号： B32B100

CPC分类号： B28D5/0082 ,  B28D5/045 ,  Y10T83/04 ,  Y10T156/1064 ,  Y10T156/1082 ,  Y10T156/12

摘要： It is an object of the present invention to provide a method for slicing a hard and brittle material having a crystal structure, such as a silicon ingot, and more particularly a hard and brittle material cutting method which solves the problem of worsening variance in thickness, nanotopography, and wafer warpage. The inventors perfected the present invention upon discovering that when retainer plates are bonded to or pressed against the ends of an ingot, and simultaneous slicing with a wire saw is performed along with the retainer plates, a portion of increasing variance in the warpage, nanotopography, and thickness will appear in the portions corresponding to the retainer plates, resulting in a decrease in variance in wafer warpage, nanotopography, and thickness at the ends of the targeted ingot.

摘要翻译： 本发明的目的是提供一种用于切割具有诸如硅锭的晶体结构的硬脆材料的方法，更具体地说，一种解决厚度变化恶化的硬脆材料切割方法， 纳米形貌和晶圆翘曲。 本发明人发现，当保持板结合或压在锭的端部时，本发明完成了本发明，并且与保持板一起执行与线锯的同时切片，翘曲变化的一部分，纳米形貌， 并且厚度将出现在对应于保持板的部分中，导致晶片翘曲，纳米形貌和目标晶锭末端的厚度变化减小。

公开(公告)号：US06332643B1

公开(公告)日：2001-12-25

申请号：US09412400

申请日：1999-10-05

申请人： Akihiro Sukegawa ,  Akira Nakashima

发明人： Akihiro Sukegawa ,  Akira Nakashima

IPC分类号： B60R2700

CPC分类号： B62D25/04

摘要： A center pillar includes an upper member 2 and a lower member 3. The upper member 2 is joined by welding to the lower member 3, such that the upper member 2 is positioned inwardly relative to the lower member 3 in a transverse direction of a vehicle body and is inclined rearward relative to the lower member 3 in longitudinal direction of the vehicle body. In addition, an upper end portion of the lower member 3 has an end face that faces transversely outward and inclines downwardly. A reinforcement plate 6 extends to an upper end portion of the upper member and is joined thereat to the upper member for reinforcement of a state in which the lower member 3 is joined to a side sill 5.

摘要翻译： 中心柱包括上部构件2和下部构件3.上部构件2通过焊接连接到下部构件3，使得上部构件2相对于下部构件3在车辆的横向方向上向内定位 并且在车体的纵向方向上相对于下部构件3向后倾斜。 此外，下部构件3的上端部具有横向向外并向下倾斜的端面。 加强板6延伸到上部构件的上端部并且与上部构件接合，用于加强下部构件3接合到下纵梁5的状态。

公开(公告)号：US5680651A

公开(公告)日：1997-10-21

申请号：US646393

申请日：1996-05-09

申请人： Masaru Tsuji ,  Akira Nakashima ,  Yoshikazu Kondo

发明人： Masaru Tsuji ,  Akira Nakashima ,  Yoshikazu Kondo

IPC分类号： B41J3/60 ,  G03G15/23 ,  G03G21/00

CPC分类号： B41J3/60 ,  G03G15/234

摘要： An object of the invention is to shorten the path of back-side printing, improve the job efficiency, surely correct the curl given by a fixing roller and carry out switching for the back-side printing in a simple configuration. A duplex printing apparatus is provided with a sheet tray installed in a lower portion thereof, and first guiding device installed in one side portion thereof. Second transport path is installed in an upper portion above the first transporting device installed above the sheet tray, and installed in the second transport path are developing/image transferring device, fixing device and third guiding device, in this order from below. Installed substantially in parallel to the first transport path L1 and near one side of the duplex printing apparatus is third guiding device, and installed along the third transport path are fourth guiding device, correcting device, third transporting device and fifth guiding device, in this order from above. Second transporting device and a discharge port are installed on the opposite side of the third guiding from the fourth guiding device in this order.

摘要翻译： 本发明的目的是为了缩短背面印刷的路径，提高作业效率，确实地校正由定影辊给出的卷曲，并以简单的结构进行背面印刷的切换。 双面打印设备设置有安装在其下部的纸盘，并且其一侧的侧部安装有第一引导装置。 第二传送路径安装在安装在片材托盘上方的第一传送装置上方的上部，并且从下方依次安装在第二传送路径中，是显影/图像传送装置，固定装置和第三引导装置。 基本上平行于第一输送路径L1并且靠近双面打印装置的一侧安装的第三引导装置，沿着第三输送路径安装为第四引导装置，校正装置，第三输送装置和第五引导装置，依次 从上面。 第二输送装置和排出口依次安装在第四引导装置的第三引导件的相反侧。

公开(公告)号：US08452452B2

公开(公告)日：2013-05-28

申请号：US13148183

申请日：2010-01-28

申请人： Toshiyuki Kondo ,  Shinji Sawada ,  Nobuhiro Nanba ,  Yoshikazu Hayakawa ,  Kenji Fujimoto ,  Akira Nakashima ,  Takashi Uno

发明人： Toshiyuki Kondo ,  Shinji Sawada ,  Nobuhiro Nanba ,  Yoshikazu Hayakawa ,  Kenji Fujimoto ,  Akira Nakashima ,  Takashi Uno

IPC分类号： G05B15/00 ,  G06F19/00

CPC分类号： B25J15/0009 ,  B25J9/1612 ,  B25J15/10

摘要： The grip position calculator determines a grip position where the fingers can grip a workpiece in any orientation of the workpiece. The calculator then determines an initial position where the finger tips can grip the workpiece and set the initial position as a point of calculation. Then an allowable gripping force is calculated which is an index that indicates an allowable force to be applied to the workpiece at point. Then other allowable forces are calculated for a plurality of points near the point of calculation. Then the point of calculation is selected as a possible gripping position if the allowable force a point is greater than any of the allowable forces. Otherwise, one of the points is selected for another point of calculation where the greatest allowable force (De) has been calculated and return to calculating an allowable gripping force.

摘要翻译： 握持位置计算器确定手指可以在工件的任何取向上夹持工件的抓握位置。 然后，计算器确定指尖可握住工件的初始位置，并将初始位置设置为计算点。 然后，计算出允许的夹持力，其是指示在点处施加到工件的允许力的指标。 然后对于计算点附近的多个点计算其他容许力。 然后，如果允许的力一点大于任何允许的力，则选择计算点作为可能的夹持位置。 否则，在计算最大容许力（De）的另一个计算点中选择一个点，并返回到计算允许的夹紧力。

公开(公告)号：US20120192848A1

公开(公告)日：2012-08-02

申请号：US13499990

申请日：2010-09-13

申请人： Akira Nakashima ,  Yukinobu Kaiga

发明人： Akira Nakashima ,  Yukinobu Kaiga

IPC分类号： H01L21/304 ,  B28D5/04

CPC分类号： B28D5/045 ,  B24B27/0633 ,  B24B55/02 ,  B28D5/0076

摘要： To provide a method of slicing a silicon ingot for slicing a silicon ingot using a bonded abrasive wire saw, which can reduce the consumption of the bonded abrasive wire required for the slicing process as much as possible, thereby greatly reducing the manufacturing cost and to provide a wire saw used for this method. In the method of slicing a silicon ingot using a wire saw, while a bonded abrasive wire helically wound at a constant pitch around peripheral surfaces of a plurality of rollers is run with a coolant being supplied onto the wire, and while the coolant is also supplied to a side portion of the silicon ingot to be cut where the wire passes in slicing of the silicon ingot; the silicon ingot is moved relative to the wire, thereby slicing the silicon ingot to form a plurality of silicon wafers.

摘要翻译： 提供一种切割硅锭的方法，用于使用粘结的磨料线锯切割硅锭，这可以尽可能地减少切割过程所需的粘合磨料的消耗，从而大大降低制造成本并提供 用于该方法的线锯。 在使用线锯切割硅锭的方法中，当在多个辊周围表面以恒定间距螺旋缠绕的接合磨料线在供给到丝线上的冷却剂运行时，以及当冷却剂也被供给时 到硅锭的切片通过的要切割的硅锭的侧部; 硅锭相对于导线移动，从而切割硅锭以形成多个硅晶片。

公开(公告)号：US08118898B2

公开(公告)日：2012-02-21

申请号：US11907318

申请日：2007-10-11

申请人： Yoshinori Wakamiya ,  Hiroyasu Nishida ,  Yuji Tawarazako ,  Kazuaki Inoue ,  Osamu Yoshida ,  Akira Nakashima

发明人： Yoshinori Wakamiya ,  Hiroyasu Nishida ,  Yuji Tawarazako ,  Kazuaki Inoue ,  Osamu Yoshida ,  Akira Nakashima

IPC分类号： C09G1/04 ,  B01F3/12 ,  C01B33/12

CPC分类号： C09G1/02 ,  C01B33/14 ,  C09K3/1436 ,  C09K3/1463

摘要： The present invention provides a sol of spinous silica-based particles in which silica-based particles having peculiar forms, spinous forms are dispersed in a solvent. The spinous silica-based particles have verrucous projections formed on surfaces of spherical silica-based particles. In the spinous particles, a value of the surface roughness (SA1/SA2, SA1 indicating a specific surface area measured by the BET method or the Sears method and SA2 indicating a specific surface area converted from an average particle diameter (D2) measured by the image analysis method) is in the range from 1.7 to 10. Furthermore the average diameter (D2) measured by the image analysis method is in the range from 7 to 150 nm.

摘要翻译： 本发明提供一种其中具有特殊形式的二氧化硅基颗粒，棘突分散在溶剂中的棘状二氧化硅基颗粒的溶胶。 棘状二氧化硅基颗粒在球状二氧化硅基颗粒的表面上形成疣状突起。 在棘突中，表示粗糙度（SA1 / SA2，SA1，表示通过BET法测定的比表面积或Sears法）的SA1，SA2表示由平均粒径（D2）测定的比表面积 图像分析方法）在1.7至10的范围内。此外，通过图像分析方法测量的平均直径（D2）在7至150nm的范围内。

公开(公告)号：US08062414B2

公开(公告)日：2011-11-22

申请号：US10533302

申请日：2003-10-27

申请人： Akira Nakashima ,  Miki Egami ,  Michio Komatsu ,  Yoshihiro Nakata ,  Ei Yano ,  Katsumi Suzuki

发明人： Akira Nakashima ,  Miki Egami ,  Michio Komatsu ,  Yoshihiro Nakata ,  Ei Yano ,  Katsumi Suzuki

IPC分类号： C04B41/50 ,  D06M15/643 ,  C09D183/04

CPC分类号： H01L21/02126 ,  C08G77/08 ,  C09D183/04 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/316

摘要： The present invention relates to a coating liquid for forming an amorphous silica-based coating film with a low dielectric constant of 2.5 or below and the Young's modulus of 6.0 GPa or more and having excellent hydrophobic property, and to a method of preparing the same. The coating liquid may contain a silicon compound obtained by hydrolyzing tetraalkyl ortho silicate (TAOS) and specific alkoxysilane (AS) in the presence of tetraalkyl ammonium hydroxide (TAAOH), or may contain a silicon compound obtained by hydrolyzing or partially hydrolyzing tetraalkyl ortho silicate (TAOS) in the presence of tetraalkyl ammonium hydroxide (TAAOH), mixing the reaction product with specific alkoxysilane or a hydrolysate or a partial hydrolysate thereof, and hydrolyzing all or a portion of the mixture according to the necessity. In addition, the coating liquid is prepared by mixing components described above at a specific ratio and under specific process conditions.

摘要翻译： 本发明涉及一种低介电常数为2.5以下，杨氏模量为6.0GPa以上，疏水性优异的无定形二氧化硅系涂膜用涂布液及其制备方法。 涂布液可以含有通过在四烷基氢氧化铵（TAAOH）的存在下水解四烷基原硅酸盐（TAOS）和特定烷氧基硅烷（AS））而获得的硅化合物，或者可以含有通过水解或部分水解原硅酸四烷基酯 TAOS）在四烷基氢氧化铵（TAAOH）的存在下，将反应产物与特定的烷氧基硅烷或其水解产物或其部分水解产物混合，并根据需要水解全部或一部分混合物。 此外，通过以特定比例和特定工艺条件混合上述组分来制备涂布液。

公开(公告)号：US07902039B2

公开(公告)日：2011-03-08

申请号：US11946643

申请日：2007-11-28

申请人： Shinichi Tomita ,  Masao Yoshimuta ,  Yasuyuki Hashimoto ,  Akira Nakashima

发明人： Shinichi Tomita ,  Masao Yoshimuta ,  Yasuyuki Hashimoto ,  Akira Nakashima

IPC分类号： H01L21/00

CPC分类号： H01L21/304 ,  H01L21/02024 ,  H01L21/2007 ,  H01L21/76256

摘要： A method for manufacturing a silicon wafer is characterized by performing one or both of grinding and polishing to a thin discoid silicon wafer to give bowl-shaped warpage that is concave at a central part to a wafer surface. One main surface of the thin discoid silicon wafer is adsorbed and held, and one or both of grinding and polishing are performed to the other main surface to fabricate a convex wafer whose thickness is increased from a wafer outer periphery toward a wafer center or fabricate a concave wafer whose thickness is reduced from the wafer outer periphery toward the wafer center. Then, the other main surface is adsorbed and held to protrude the center or the periphery of the one main surface side based on elastic deformation. One or both of grinding and polishing are carried out with respect to the one main surface to flatten the main surface, and adsorption and holding are released to give bowl-shaped warpage that is concave at the central part to the other main surface or the one main surface. By the method, an SOI wafer or an epitaxial silicon wafer having a high degree of flatness is obtained.

摘要翻译： 硅晶片的制造方法的特征在于对薄盘状硅晶片进行研磨抛光中的一个或两个以给出在晶片表面的中心部分凹陷的碗形翘曲。 吸附并保持薄盘形硅晶片的一个主表面，并且对另一个主表面进行研磨和抛光中的一个或两个以制造厚度从晶片外周朝向晶片中心增加的凸形晶片，或者制造 其厚度从晶片外周朝向晶片中心减小的凹晶片。 然后，基于弹性变形，另一个主表面被吸附并保持成一个主表面侧的中心或周边突出。 研磨抛光中的一个或两个相对于一个主表面进行，以平坦化主表面，并且释放吸附和保持以产生碗形翘曲，其在中心部分处凹入另一个主表面或一个 主表面。 通过该方法，获得具有高度平坦度的SOI晶片或外延硅晶片。

公开(公告)号：US20100003181A1

公开(公告)日：2010-01-07

申请号：US12310486

申请日：2007-07-11

申请人： Miki Egami ,  Akira Nakashima ,  Michio Komatsu

发明人： Miki Egami ,  Akira Nakashima ,  Michio Komatsu

IPC分类号： C01B33/12 ,  H01L21/316

CPC分类号： C09D1/00 ,  C09D4/00 ,  H01L21/316 ,  C08G77/04

摘要： A method of forming on a substrate an amorphous silica-based coating film having a low dielectric constant of 3.0 or below and a film strength (Young's modulus) of 3.0 GPa or more, which comprises, as a typical one, the steps of; (a) coating on the substrate a liquid composition containing hydrolysate of an organic silicon compound or compounds hydrolyzed in the presence of tetraalkylammonium hydroxide (TAAOH); (b) setting the substrate in a chamber and then drying a coating film formed on the substrate at a temperature in the range from 25 to 340° C.; (c) heating the coating film at a temperature in the range from 105 to 450° C. with introduction of a superheated steam having such a temperature into the chamber, and (d) curing the coating film at a temperature in the range from 350 to 450° C. with introduction of a nitrogen gas into the chamber.

摘要翻译： 一种在基板上形成介电常数低于3.0或更低的无定形二氧化硅基涂层以及3.0GPa或更高的膜强度（杨氏模量）的方法，其中典型的步骤包括： （a）在基材上涂覆含有有机硅化合物的水解产物或在四烷基氢氧化铵（TAAOH））存在下水解的化合物的液体组合物; （b）将基板设置在室中，然后在25至340℃的温度范围内干燥形成在基板上的涂膜。 （c）在105至450℃的温度范围内加热涂膜，并将具有这种温度的过热蒸汽引入室中，和（d）在350℃的温度下固化涂膜 至450℃，同时将氮气引入室中。