公开(公告)号：US20100301944A1

公开(公告)日：2010-12-02

申请号：US12612755

申请日：2009-11-05

申请人： Kazuya Yamamoto ,  Satoshi Suzuki ,  Takao Haruna ,  Takao Moriwaki

发明人： Kazuya Yamamoto ,  Satoshi Suzuki ,  Takao Haruna ,  Takao Moriwaki

IPC分类号： H03F3/16

CPC分类号： H01L29/778 ,  H01L27/0605 ,  H01L27/0623 ,  H01L29/0826 ,  H01L29/165 ,  H01L29/7371 ,  H03F3/195 ,  H03F2200/18 ,  H03F2200/411

摘要： A power amplifier includes: a semiconductor substrate; a preceding-stage amplifying device on the semiconductor substrate, amplifying an input signal; a following-stage amplifying device on the semiconductor substrate, amplifying an output signal of the preceding-stage amplifying device; and an inter-stage matching circuit connecting the preceding-stage amplifying device to the following-stage amplifying device. The preceding-stage amplifying device has a first field effect transistor; the following-stage amplifying device has a heterojunction bipolar transistor; and the inter-stage matching circuit has a capacitance galvanically separating the output terminal of the preceding-stage amplifying device from the input terminal of the following-stage amplifying device.

摘要翻译： 功率放大器包括：半导体衬底; 在半导体衬底上的前级放大装置，放大输入信号; 在半导体衬底上的后级放大装置，放大前级放大装置的输出信号; 以及将前级放大装置连接到后级放大装置的级间匹配电路。 前级放大装置具有第一场效应晶体管; 后级放大装置具有异质结双极晶体管; 并且级间匹配电路具有将前级放大装置的输出端子与后级放大装置的输入端子电流分离的电容。

公开(公告)号：US20100186898A1

公开(公告)日：2010-07-29

申请号：US12686060

申请日：2010-01-12

申请人： Kohei FUKUSHIMA ,  Toshiki Takahashi ,  Hiroyuki Matsuura ,  Yutaka Motoyama ,  Kazuya Yamamoto

发明人： Kohei FUKUSHIMA ,  Toshiki Takahashi ,  Hiroyuki Matsuura ,  Yutaka Motoyama ,  Kazuya Yamamoto

IPC分类号： C23F1/08 ,  C23C16/505

CPC分类号： C23C16/345 ,  C23C16/4401 ,  C23C16/452 ,  H01J37/321 ,  H01J37/3244

摘要： A vertical plasma processing apparatus for performing a plasma process on a plurality of target objects together at a time includes an activation mechanism configured to turn a process gas into plasma. The activation mechanism includes a vertically elongated plasma generation box attached to a process container at a position corresponding to a process field and confining a plasma generation area airtightly communicating with the process field, an ICP electrode disposed outside the plasma generation box and extending in a longitudinal direction of the plasma generation box, and an RF power supply connected to the ICP electrode. The ICP electrode includes a separated portion separated from a wall surface of the plasma generation box by a predetermined distance.

摘要翻译： 一次在一起对多个目标物体进行等离子体处理的垂直等离子体处理装置包括将处理气体转换为等离子体的启动机构。 激活机构包括垂直延长的等离子体生成箱，其在对应于处理场的位置处附接到处理容器，并限制与过程场气密地通信的等离子体产生区域; ICP电极，设置在等离子体生成箱的外部并且沿纵向延伸 等离子体生成箱的方向，以及与ICP电极连接的RF电源。 ICP电极包括与等离子体发生箱的壁面隔开预定距离的分离部分。

公开(公告)号：US20100148422A1

公开(公告)日：2010-06-17

申请号：US12448793

申请日：2008-08-28

申请人： Akira Kawaguchi ,  Kazuya Yamamoto

发明人： Akira Kawaguchi ,  Kazuya Yamamoto

IPC分类号： B65H9/00 ,  B65H5/22 ,  B65H7/02 ,  B65H5/02

CPC分类号： B65H5/224 ,  B65H5/38 ,  B65H15/00 ,  B65H2220/09 ,  B65H2301/3421 ,  B65H2404/612

摘要： A sheet of paper is reliably held by suction at the front and rear of a turn guide on the transport path of the sheet according to paper transport conditions.

摘要翻译： 根据纸张输送条件，纸张在纸张的输送路径上的转向引导件的前后被抽吸可靠地保持。

公开(公告)号：US07688133B2

公开(公告)日：2010-03-30

申请号：US12254069

申请日：2008-10-20

申请人： Kazuya Yamamoto ,  Miyo Miyashita

发明人： Kazuya Yamamoto ,  Miyo Miyashita

IPC分类号： H03F1/14

CPC分类号： H03F3/191 ,  H03F1/0261 ,  H03F3/72 ,  H03F2200/18 ,  H03F2200/408 ,  H03F2203/7239

摘要： A power amplifier includes: an amplifying transistor; a bias circuit; a first diode; a second diode; a matching attenuating circuit; a first current mirror circuit; a serial resonant circuit, and a switch. In an amplification mode, the bias circuit supplies a bias current to the amplifying transistor, and the first current mirror circuit turns off the first and second diodes, and the switch. In an attenuation mode, the bias circuit supplies no bias current to the amplifying transistor, and the first current mirror circuit turns on the first and second diodes and the switch.

摘要翻译： 功率放大器包括：放大晶体管; 偏置电路; 第一个二极管; 第二个二极管; 匹配衰减电路; 第一电流镜电路; 串联谐振电路和开关。 在放大模式中，偏置电路向放大晶体管提供偏置电流，并且第一电流镜电路关断第一和第二二极管以及开关。 在衰减模式中，偏置电路不向放大晶体管提供偏置电流，并且第一电流镜电路导通第一和第二二极管和开关。

公开(公告)号：US20090124083A1

公开(公告)日：2009-05-14

申请号：US12285575

申请日：2008-10-08

申请人： Nobutake Nodera ,  Jun Sato ,  Kazuya Yamamoto ,  Kazuhide Hasebe

发明人： Nobutake Nodera ,  Jun Sato ,  Kazuya Yamamoto ,  Kazuhide Hasebe

IPC分类号： H01L21/306

CPC分类号： C23C16/345 ,  C23C16/0218 ,  C23C16/4405 ,  C23C16/452 ,  C23C16/45542 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32522

摘要： A method for using a film formation apparatus for a semiconductor process to form a thin film on a target substrate while supplying a film formation reactive gas from a first nozzle inside a reaction chamber includes performing a cleaning process to remove a by-product film deposited inside the reaction chamber and the first nozzle, in a state where the reaction chamber does not accommodate the target substrate. The cleaning process includes, in order, an etching step of supplying a cleaning reactive gas for etching the by-product film into the reaction chamber, and activating the cleaning reactive gas, thereby etching the by-product film, and an exhaust step of stopping supply of the cleaning reactive gas and exhausting gas from inside the reaction chamber. The etching step is arranged to use conditions that cause the cleaning reactive gas supplied in the reaction chamber to flow into the first nozzle.

摘要翻译： 在反应室内的第一喷嘴供给成膜反应性气体的同时，使用半导体工艺的成膜装置在目标基板上形成薄膜的方法包括进行清洗处理以除去内部沉积的副产物膜 反应室和第一喷嘴，处于反应室不容纳目标基板的状态。 清洗工序依次包括：将清洗反应性气体供给到反应室内的蚀刻工序，激活清洗反应性气体，蚀刻副产物膜，以及停止排出工序 从反应室内供给清洗反应气体和排气。 蚀刻步骤被设置为使得在反应室中供应的清洁反应气体流入第一喷嘴的条件。

公开(公告)号：US20060170949A1

公开(公告)日：2006-08-03

申请号：US11344022

申请日：2006-01-31

申请人： Kazuya Yamamoto

发明人： Kazuya Yamamoto

IPC分类号： G06F3/12

CPC分类号： G06F3/1212 ,  G06F3/1208 ,  G06F3/1256 ,  G06F3/1285

摘要： A printing system is provided capable of preventing unnecessary image information from being sent. The printing system is formed by an image processing apparatus to generate print data and an image forming apparatus to receive the print data and to execute a print. In the printing system, the image forming apparatus includes an image forming; a print mode discriminating section; a confirmation result inputting section; and a request informing section. The image processing apparatus includes a print data generating section; and a selecting and outputting section.

公开(公告)号：US20050088233A1

公开(公告)日：2005-04-28

申请号：US10922959

申请日：2004-08-23

申请人： Miyo Miyashita ,  Kazuya Yamamoto

发明人： Miyo Miyashita ,  Kazuya Yamamoto

IPC分类号： H03F3/19 ,  H03F3/45

CPC分类号： H03F3/45085 ,  H03F3/19

摘要： In a driver circuit including transistors each having an emitter follower configuration and a pair of differential transistors with emitter outputs of the transistors of the emitter follower configuration as inputs, end terminals of the pair of differential transistors are connected to individual bonding pads, and the respective bonding pads and voltage sources are individually connected by wires that function as inductors. Thereby, even in the case where the lengths of the wires of output terminals change according to packaging, outputs can be matched by determining the wire lengths of the wires suitably.

摘要翻译： 在包括具有发射极跟随器配置的晶体管的驱动器电路和具有射极跟随器结构的晶体管的发射极输出的一对差分晶体管作为输入的情况下，该对差分晶体管的端部端子连接到单独的焊盘， 接合焊盘和电压源通过用作电感器的导线分别连接。 因此，即使在输出端子的导线的长度根据封装而变化的情况下，也可以通过适当地确定电线的长度来匹配输出。

公开(公告)号：US06707341B2

公开(公告)日：2004-03-16

申请号：US09902102

申请日：2001-07-11

申请人： Kazuya Yamamoto ,  Satoshi Suzuki

发明人： Kazuya Yamamoto ,  Satoshi Suzuki

IPC分类号： H03F304

CPC分类号： H03F3/605 ,  H03F3/602

摘要： A single transistor device is configured of a plurality of transistor cells divided and arranged in a plurality of blocks. Corresponding to the blocks a plurality of bias current supply circuits are arranged, respectively, to supply the blocks with individual bias currents, respectively. The bias current supply circuits each have a transistor with a bias condition set to decrease its ability to drive current as the corresponding bias current increases. Thus a negative feedback can be given to an increase in bias current attributed to thermal unevenness.

公开(公告)号：US06308047B1

公开(公告)日：2001-10-23

申请号：US09243467

申请日：1999-02-03

申请人： Kazuya Yamamoto ,  Kosei Maemura

发明人： Kazuya Yamamoto ,  Kosei Maemura

IPC分类号： H04B144

CPC分类号： H03G3/30 ,  H04B1/48

摘要： In an RF front end portion for processing a radio-frequency signal in a portable telephone, a low pass filter allowing passing of only a signal in a frequency band lower than a radio-frequency signal component band is arranged between a circuit processing a high power signal and a control circuit controlling operation of the radio-frequency signal processing circuit. The radio-frequency signal processing circuit is a transmission/reception multiplexing circuit transferring a transmission signal of the portable telephone to an antenna or receiving a reception signal from the antenna, and the control circuit is a transmission/reception control circuit determining an operation mode of the transmission/reception multiplexing switch. Alternatively, the radio-frequency signal processing circuit includes a power amplifier amplifying a signal to be transmitted, and a gate voltage control circuit generating gate bias voltage controlling a gain of the power amplifier. The influence of a radio-frequency leakage component leaking from a gate of the field effect transistor can be suppressed. In the case of the transmission/reception multiplexing switch, handing power can be improved, and an increase in power consumption and occupied area of the control circuit can be suppressed. In the case of the power amplifier, the gate bias voltage can be held stably, and the power amplification can be performed accurately. In the portable telephone, the RF front end portion processing the radio-frequency signal can be provided in a chip occupying a small area.

摘要翻译： 在用于处理便携式电话中的射频信号的RF前端部分中，仅允许通过低于射频信号分量频带的频带中的信号的低通滤波器被布置在电路处理高功率 信号和控制电路来控制射频信号处理电路的操作。 射频信号处理电路是将便携式电话的发送信号传输到天线或从天线接收接收信号的发送/接收多路复用电路，控制电路是确定便携式电话的操作模式的发送/接收控制电路 发送/接收复用开关。 或者，射频信号处理电路包括放大要发送的信号的功率放大器和产生用于控制功率放大器的增益的栅极偏置电压的栅极电压控制电路。 可以抑制从场效应晶体管的栅极泄漏的射频泄漏分量的影响。 在发送/接收复用开关的情况下，可以提高处理功率，并且可以抑制控制电路的功耗和占用面积的增加。 在功率放大器的情况下，可以稳定地保持栅极偏置电压，并且可以精确地执行功率放大。 在便携式电话中，可以在占用小面积的芯片中提供处理射频信号的RF前端部。

公开(公告)号：US5818278A

公开(公告)日：1998-10-06

申请号：US805883

申请日：1997-03-03

申请人： Kazuya Yamamoto ,  Kousei Maemura

发明人： Kazuya Yamamoto ,  Kousei Maemura

IPC分类号： H03K5/003 ,  H03K3/356 ,  H03K19/0185 ,  H03K19/0952 ,  H03K19/07

CPC分类号： H03K3/356034 ,  H03K19/018514

摘要： A level shift circuit shifting logic levels of an SCFL circuit to logic levels of a DCFL circuit, including an SCFL circuit having complementary outputs; two source follower circuits with their inputs respectively connected to the complementary outputs of the SCFL circuit; a high/low detecting circuit detecting "high" or "low" signals which have DCFL levels from the two source follower circuits and outputting signals having logic levels according to the detection results; and DCFL circuits with inputs connected to outputs of the high/low detecting circuit. Therefore, it is possible to obtain a level shift circuit operating with a wider voltage range and in a wider temperature range than the prior art circuit.

摘要翻译： 电平移位电路将SCFL电路的逻辑电平转换为DCFL电路的逻辑电平，包括具有互补输出的SCFL电路; 两个源极跟随器电路的输入分别连接到SCFL电路的互补输出; 检测具有来自两个源极跟随器电路的DCFL电平并根据检测结果输出具有逻辑电平的信号的“高”或“低”信号的高/低检测电路; 以及具有与高/低检测电路的输出连接的输入的DCFL电路。 因此，可以获得在比现有技术电路更宽的电压范围和更宽的温度范围内工作的电平移位电路。