摘要:
In a power transmission 1 in which a pulley 2 and a hub 5 are engaged with each other, in protrusions 51 of the hub 5 side and in protrusions 22 of the pulley 2 side located on an outer circumferential side with respect to an outer hub 53, an annular dust flange 51d is provided which protrudes and expands to the outside in the radial direction from a front side portion which adjoins protrusions 51c of an elastic portion 52. When an outer circumferential end of this dust flange 51d is elastically, tightly contacted with a sealing portion 23 of the pulley 2, a front face of the protrusions 22 can be completely covered.
摘要:
A power transmission apparatus including a rotary unit (10) rotated by receiving the turning effort and a nut member (3) for coupling the rotary unit (10) to a rotary shaft (4) of a rotary device is disclosed. The nut member (3) has a central hole (3e) formed therethrough from one end surface (3c) to the other end surface (3d) thereof and an internally threaded portion (3g) formed in the central hole (3e). The internally threaded portion (3g) is forced onto an externally threaded portion (4b) formed on the rotary shaft (4) from the other end surface (3d) side thereby to be screwed to the rotary shaft (4) while at the same time coupling the rotary unit (10) to the rotary shaft (4). The apparatus further includes a cap (5) fitted onto the nut member (3) in such a manner as to cover and seal one end surface (3c) of the nut member and an outer peripheral surface (3i) of the nut member connected to the peripheral edge of the one end surface (3c).
摘要:
The power transmission device (10) comprises: a rotatable rotary part (1) to which a rotary driving force is transmitted from a driving source; and a power transmission shut-off member (3) for preventing an excessive torque from being transmitted between the rotatable rotary part and a rotating shaft (4) of a driven apparatus and threadedly coupled to the rotating shaft. A hub (2) arranged between the rotary part and the power transmission shut-off member to connect them is located between the power transmission shut-off member and the rotating shaft. The power transmission device further comprises a washer (6) located so as to be sandwiched between the hub and the rotating shaft. The washer is separated from the hub, which is not sandwiched between the washer and an end surface (308) of the power transmission shut-off member near the rotating shaft.
摘要:
A power transmission device includes: a pulley 1 rotatablely attached to a casing 9; a hub 2 connected to the pulley 1 by an engagement of protrusions with recesses; and a power shutoff member 3 interposed between the hub 2 and a rotary shaft 4. The power shutoff member and the rotary shaft 4 are joined to each other by means of screwing. When a water intrusion path formed between a hub side seating face of the hub and a shaft side seating face 44 of the rotary shaft is formed into a labyrinth structure, water is prevented from entering the seating face. An engagement portion 35 on the power shutoff member side is engaged with a hub side engagement portion 21a so that it can be accommodated in the hub side engagement portion 21a, and the power shutoff member can be rotated together when the hub is rotated. An engagement gap formed between a power shutoff member side engagement portion and a hub side engagement portion in the radial direction perpendicular to an axis of the rotary shaft is in a range from 0.001 mm to 15% of a diameter of a circumscribed circle of the power shutoff member side engagement portion.
摘要:
A light-emitting diode is built on a silicon substrate which has been doped with a p-type impurity to possess sufficient conductivity to provide part of the current path through the LED. The p-type silicon substrate has epitaxially grown thereon a buffer region of n-type AlInGaN. Further grown epitaxially on the buffer region is the main semiconductor region of the LED which comprises a lower confining layer of n-type GaN, an active layer for generating light, and an upper confining layer of p-type GaN. In the course of the growth of the buffer region and main semiconductor region there occurs a thermal diffusion of gallium and other Group III elements from the buffer region into the p-type silicon substrate, with the consequent creation of a p-type low-resistance region in the substrate. Interface levels are created across the heterojunction between p-type silicon substrate and n-type buffer region. The interface levels expedite carrier transport from substrate to buffer region, contributing to reduction of the drive voltage requirement of the LED.
摘要:
A power transmission apparatus includes a pulley 1 having a belt attached thereto to transmit the rotating drive force, a hub 2 which connects the pulley to a rotating shaft of a driven device, a bearing 7 which rotatably supports the pulley, and a sleeve ring 5 which is fitted and secured to the pulley and attaches the bearing to the pulley to prevent it relatively moving. The sleeve ring is provided, on its first end opposite to the driven device, with a bent portion 5b against which the bearing abuts to restrict further movement of the bearing. An annular retainer 6 is provided on the portion of the bearing adjacent to the drive device. The bearing is secured to the sleeve ring through the annular retainer by calking a second end 5a of the sleeve ring opposite to the first end. The sleeve ring is provided with a projection 5f which projects in the axial direction from the rear surface of the pulley and a casing 9 is provided with an annular groove 9c which at least partly receives therein the projection.
摘要:
A power transmission system including an integrally molded hub and elastic member, where stress is inhibited from concentrating at the gate marks remaining after integral molding. In a pulley driven by a belt, a plastic pulley side relief section 1a provided at a pocket section of the pulley and a plastic hub side relief section provided on an iron outer ring of the hub engaged at the pocket section whereby power is transmitted from the pulley to the shaft. The hub side relief section and outer ring forming parts of the hub, the iron inner hub to be fastened to the shaft, and the plastic cylindrical part are integrally molded so that the gate mark for plastic injection is formed near to or further to the outer circumference of the outer ring.
摘要:
An aspect of the present invention inheres in a semiconductor light-emitting element includes a light-emitting functional stacked body including a light-emitting region having a light-emitting function, and including a light extraction surface for extracting light emitted from the light-emitting region, and an upward convex lens disposed on the light extraction surface.
摘要:
A bearing according to the present invention includes a cylindrical member formed on and around an outer member of a usual bearing. To firmly connect the cylindrical member to the outer member, grooves having an inclination relative to the axial direction of the bearing are formed so that the grooves do not cross one another on the outer surface of the outer member. The cylindrical member is made of a resin material by molding, and the resin, which is melted by heat in the molding process, enters into and adheres to the grooves. In this manner, the cylindrical member is firmly connected to the outer member so that movement in both of the rotational and axial directions of the bearing is prevented. The grooves formed on the outer surface of the outer member may be grouped, and their inclination relative to the axial direction may be alternately reversed group by group.
摘要:
A light-emitting diode is built on a silicon substrate which has been doped with a p-type impurity to possess sufficient conductivity to provide part of the current path through the LED. The p-type silicon substrate has epitaxially grown thereon a buffer region of n-type AlInGaN. Further grown epitaxially on the buffer region is the main semiconductor region of the LED which comprises a lower confining layer of n-type GaN, an active layer for generating light, and an upper confining layer of p-type GaN. In the course of the growth of the buffer region and main semiconductor region there occurs a thermal diffusion of gallium and other Group III elements from the buffer region into the p-type silicon substrate, with the consequent creation of a p-type low-resistance region in the substrate. Interface levels are created across the heterojunction between p-type silicon substrate and n-type buffer region. The interface levels expedite carrier transport from substrate to buffer region, contributing to reduction of the drive voltage requirement of the LED.