公开(公告)号：US5589735A

公开(公告)日：1996-12-31

申请号：US506829

申请日：1995-07-25

Applicant: Akiyasu Yamaguchi ,  Yukio Yasuda ,  Tsuneo Okanuma ,  Tatsushi Igarashi ,  Hiromitsu Matsuno ,  Tatsumi Hiramoto

Inventor： Akiyasu Yamaguchi ,  Yukio Yasuda ,  Tsuneo Okanuma ,  Tatsushi Igarashi ,  Hiromitsu Matsuno ,  Tatsumi Hiramoto

IPC: H01J61/86 ,  G03F7/20 ,  H01J61/30 ,  H01J61/74 ,  H01J7/08 ,  H01J61/18

CPC classification number: G03F7/70016 ,  H01J61/30 ,  H01J61/74

Abstract: An emission device which operates a cadmium lamp with a light intensity sufficient for used in industrial applications is achieved by an emission device having a cadmium lamp with a fluorescent tube within which a cathode and an anode are space a small distance apart and a buffer gas for easier initiation of luminous operation and metallic cadmium in an amount per unit volume of the fluorescent tube of 1.times.10.sup.-4 g/cm.sup.3 to 3.times.10.sup.-3 g/cm.sup.3 are encapsulated, and a power source device for supplying an electrical input between the cathode and the anode in an electrical input range from 0.5 kW to 5.0 kW with the condition:6.03+2.79 W.ltoreq.r.ltoreq.40being satisfied, where the electrical input of the power source device into the cadmium lamp in steady-state luminous operation is W (kW) and the maximum inside radius of the fluorescent tube is r (mm).

Abstract translation: 操作具有足以用于工业应用的光强度的镉灯的发射装置通过具有镉灯的发射装置来实现，所述镉灯具有荧光管，阴极和阳极间隔开小间隔，并且缓冲气体用于 封装了1×10 -4 g / cm 3〜3×10 -3 g / cm 3的荧光灯的单位体积的发光操作的更容易的起始和金属镉，以及用于在阴极和阴极之间提供电输入的电源装置 在0.5kW至5.0kW的电输入范围内的阳极，条件为：6.03 + 2.79W

公开(公告)号：US5548220A

公开(公告)日：1996-08-20

申请号：US433755

申请日：1995-05-04

Applicant: Atsunobu Kawamoto ,  Yukio Yasuda

Inventor： Atsunobu Kawamoto ,  Yukio Yasuda

IPC: F02P3/04 ,  F02P17/12 ,  F02P17/00

CPC classification number: F02P17/12 ,  F02P2017/125

Abstract: An apparatus for detecting a misfire in an internal combustion engine that is capable of preventing erroneous detection in a period in which the discharged voltage on a secondary ignition coil is charged. The apparatus having a capacitor, which is supplied with bias voltage from a primary side of an ignition coil to be electrically charged to apply the charged voltage to the spark plug at the time of discharge of the spark plug to cause an ionic current to flow and a misfire detection circuit for determining whether or not a misfire has taken place in accordance with detection of the ionic current flowing from the capacitor. The apparatus for detecting a misfire in an internal combustion engine includes a discharge-period detecting Zener diode disposed between another end of the primary coil and an inverting input terminal of an operational amplifier, having Zener voltage lower than the Zener voltage of a Zener diode, which sets voltage to be charged into the capacitor, and connected in a direction in which an electric current flowing while exceeding the Zener voltage is caused to flow toward the inverting input terminal of the operational amplifier.

Abstract translation: 一种用于检测内燃机中的失火的装置，其能够防止在二次点火线圈上的放电电压被充电的时段内的错误检测。 该装置具有电容器，该电容器从点火线圈的初级侧提供带电电压的偏置电压，以在放电火花塞时向火花塞施加充电电压以使离子电流流动， 用于根据从电容器流出的离子电流的检测来确定是否发生失火的失火检测电路。 用于检测内燃机中的失火的装置包括放电周期检测齐纳二极管，其设置在初级线圈的另一端和运算放大器的反相输入端之间，其齐纳电压低于齐纳二极管的齐纳电压， 其将要充电的电压设置到电容器中，并且在使超过齐纳压的电流流向运算放大器的反相输入端的方向上连接。

公开(公告)号：US5532562A

公开(公告)日：1996-07-02

申请号：US267378

申请日：1994-06-29

Applicant: Yukio Yasuda

Inventor： Yukio Yasuda

IPC: H02P7/29 ,  H02P7/00 ,  H01R39/46

CPC classification number: H02P7/04

Abstract: A control circuit for an H-bridge circuit comprises a single capacitor, a charge/discharge circuit for charging/discharging the capacitor in response to a control command signal, a voltage detector circuit for detecting a voltage appearing across the capacitor and a hold circuit for holding the control command signal in response to of a predetermined voltage detected by the voltage detection circuit. Charge and discharge of the capacitor is controlled in dependence on changes in the control command signal to thereby prevent occurrence of a through-current flow in the H-bridge circuit while allowing the bridge circuit to be changed over to the operation state indicated by the control command signal after lapse of charge/discharge period. The control circuit for the H-bridge circuit can be implemented in a miniaturized size with high reliability of operation while decreasing the number of elements attached externally even in the case where the control circuit is implemented in the form of an integrated circuit.

Abstract translation: 用于H桥电路的控制电路包括单个电容器，用于响应于控制命令信号对电容器进行充电/放电的充电/放电电路，用于检测跨过电容器的电压的电压检测器电路和用于 根据由电压检测电路检测到的预定电压来保持控制命令信号。 根据控制指令信号的变化来控制电容器的充放电，从而防止H桥电路中的通流流动的发生，同时允许桥式电路转换到由控制指示的操作状态 经过充电/放电时间后的指令信号。 用于H桥电路的控制电路可以以具有高可靠性的小型化大小实现，同时减少外部元件的数量，即使在以集成电路的形式实现控制电路的情况下也是如此。

公开(公告)号：US08933568B2

公开(公告)日：2015-01-13

申请号：US12907468

申请日：2010-10-19

Applicant: Tsuyoshi Takayama ,  Yukio Yasuda ,  Hajime Kato ,  Kazuaki Hiyama ,  Taishi Sasaki ,  Mikio Ishihara

Inventor： Tsuyoshi Takayama ,  Yukio Yasuda ,  Hajime Kato ,  Kazuaki Hiyama ,  Taishi Sasaki ,  Mikio Ishihara

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC classification number: H01L23/142 ,  H01L23/492 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L2224/29076 ,  H01L2224/29101 ,  H01L2224/2919 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01068 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/0781 ,  H01L2924/351 ,  H01L2924/00

Abstract: A semiconductor device according to the present invention includes: a power semiconductor element that is a semiconductor element; bonding parts provided for bonding of an upper surface and a lower surface of the semiconductor element; and metal plates bonded to the power semiconductor element from above and below through the bonding parts, wherein the bonding part includes a mesh metal body disposed between the semiconductor element and the metal plate, and a bonding member in which the mesh metal body is embedded.

Abstract translation: 根据本发明的半导体器件包括：作为半导体元件的功率半导体元件; 用于接合半导体元件的上表面和下表面的接合部分; 以及通过所述接合部从上下接合到所述功率半导体元件的金属板，其中所述接合部包括设置在所述半导体元件和所述金属板之间的网状金属体以及嵌入所述网状金属体的接合构件。

公开(公告)号：US08651701B2

公开(公告)日：2014-02-18

申请号：US12640587

申请日：2009-12-17

Applicant: Yukio Yasuda ,  Taku Sumitomo ,  Masaki Kato

Inventor： Yukio Yasuda ,  Taku Sumitomo ,  Masaki Kato

IPC: G02B27/20 ,  G21G4/00

CPC classification number: H01J65/042 ,  H01J61/025 ,  H01J61/54

Abstract: A light source device that irradiates a discharge vessel with a laser beam to produce radiant light that is reflected by an ellipsoidal reflecting surface efficiently utilizes the light produced by directing the laser beam through an unirradiated region where reflected light from the ellipsoidal reflector is blocked by the discharge vessel, through an opening side of the ellipsoidal reflector to the discharge vessel. The discharge vessel has an emission substance enclosed inside which is excited by the laser beam and produces radiant light, is arranged at a focal point of the ellipsoidal reflector. A planar mirror, with which radiant light reflected by the ellipsoidal reflector is reflected in a different direction has a window in an unirradiated region where reflected light from the ellipsoidal reflector is blocked by the discharge vessel through which the laser beam passes to the discharge vessel.

Abstract translation: 用激光束照射放电容器以产生由椭圆反射面反射的辐射光的光源装置有效地利用通过将激光束引导通过未照射区域而产生的光，其中来自椭圆反射体的反射光被 放电容器，通过椭圆反射器的开口侧到放电容器。 放电容器具有封闭在激光束内并产生辐射光的发射物质，布置在椭圆反射体的焦点处。 由椭圆反射体反射的辐射光以不同方向反射的平面镜具有在未照射区域中的窗口，其中来自椭圆形反射体的反射光被激光束通过该放电容器的放电容器阻挡。

公开(公告)号：US08288946B2

公开(公告)日：2012-10-16

申请号：US12553504

申请日：2009-09-03

Applicant: Takeo Matsushima ,  Yukio Yasuda ,  Yutaka Mune

Inventor： Takeo Matsushima ,  Yukio Yasuda ,  Yutaka Mune

IPC: H01J61/26

CPC classification number: H01J61/26 ,  H01J7/186

Abstract: To provide a flickerless discharge lamp which can remove hydrogen by a simple and safe means even if the lamp is a large discharge lamp with high pressure when lit, the discharge lamp has a pair of electrodes and a hydrogen getter (4) in the interior of an arc tube, the hydrogen getter (4) being formed of a container (41) made of metal which is hydrogen permeable and a hydrogen absorbent body (42) that is composed of a metal which can absorb hydrogen that is enclosed inside of the container (41) and is fixed to an inside wall of the container (41).

Abstract translation: 为了提供一种无闪烁的放电灯，即使灯是点亮时的高压大型放电灯，也能通过简单安全的手段除去氢，所以放电灯在内部具有一对电极和吸氢剂（4） 一个电弧管，该吸气剂（4）由一个由氢可渗透的金属制成的容器（41）和一个吸收氢的吸收体（42）构成，该吸收体由能够吸收容纳在容器内部的氢的金属组成 （41）并固定在容器（41）的内壁上。

公开(公告)号：US20110221076A1

公开(公告)日：2011-09-15

申请号：US12907468

申请日：2010-10-19

Applicant: Tsuyoshi TAKAYAMA ,  Yukio Yasuda ,  Hajime Katou ,  Kazuaki Hiyama ,  Taishi Sasaki ,  Mikio Ishihara

Inventor： Tsuyoshi TAKAYAMA ,  Yukio Yasuda ,  Hajime Katou ,  Kazuaki Hiyama ,  Taishi Sasaki ,  Mikio Ishihara

IPC: H01L23/48

CPC classification number: H01L23/142 ,  H01L23/492 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L2224/29076 ,  H01L2224/29101 ,  H01L2224/2919 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01068 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/0781 ,  H01L2924/351 ,  H01L2924/00

Abstract: A semiconductor device according to the present invention includes: a power semiconductor element that is a semiconductor element; bonding parts provided for bonding of an upper surface and a lower surface of the semiconductor element; and metal plates bonded to the power semiconductor element from above and below through the bonding parts, wherein the bonding part includes a mesh metal body disposed between the semiconductor element and the metal plate, and a bonding member in which the mesh metal body is embedded.

Abstract translation: 根据本发明的半导体器件包括：作为半导体元件的功率半导体元件; 用于接合半导体元件的上表面和下表面的接合部分; 以及通过所述接合部从上下接合到所述功率半导体元件的金属板，其中所述接合部包括设置在所述半导体元件和所述金属板之间的网状金属体以及嵌入所述网状金属体的接合构件。

公开(公告)号：US07009269B2

公开(公告)日：2006-03-07

申请号：US10853230

申请日：2004-05-26

Applicant: Yukio Yasuda

Inventor： Yukio Yasuda

IPC: H01L27/095

CPC classification number: H03K17/0828 ,  H01L29/7395 ,  H01L29/8605

Abstract: In the semiconductor device including a control input terminal, a GND terminal and an output terminal, and also having an IGBT and a control circuit driving the IGBT, a ground resistance and a temperature compensation resistance are connected in series to each other between the control input terminal and the GND terminal. A polysilicon resistance provided on an insulating film formed in a semiconductor substrate in which the IGBT is provided is employed as the ground resistance. A diffusion resistance obtained by injecting an impurity into said semiconductor substrate and performing a diffusion operation is employed as the temperature compensation resistance.

Abstract translation: 在包括控制输入端子，GND端子和输出端子的半导体器件中，并且还具有IGBT和驱动IGBT的控制电路，接地电阻和温度补偿电阻在控制输入端彼此串联连接 端子和GND端子。 在设置有IGBT的半导体衬底中形成的绝缘膜上提供的多晶硅电阻用作接地电阻。 通过将杂质注入所述半导体衬底并进行扩散操作而获得的扩散电阻用作温度补偿电阻。

公开(公告)号：US06255868B1

公开(公告)日：2001-07-03

申请号：US09629874

申请日：2000-08-01

Applicant: Yukio Yasuda

Inventor： Yukio Yasuda

IPC: H03K300

CPC classification number: H03F3/343

Abstract: An object is to reduce the offset voltage between the input and output in a wide range of output current with a simple circuit configuration. Transistors (Q1), (Q2) and (Q3) have a size ratio of m:n:1, transistors (Q6) and (Q7) have a size ratio of 1:p, and transistors (Q4) and (Q5) have a size ratio of {(m+n+1)/p:}). Accordingly a current which is (m+n+1) times the current flowing in the transistor (Q3) is supplied to the emitter electrodes of the transistors (Q1) and (Q2). Since the ratio between the currents flowing in the transistors (Q1) and (Q2) is the same as their size ratio m:n, the emitter-base voltages are equal between the transistors (Q1) and (Q2). As a result, the offset voltage between the voltage signal inputted to the input signal line (IN) and the voltage signal outputted from the output signal line (OUT) can be suppressed in a wide range of output current.

Abstract translation: 目的是通过简单的电路配置在宽范围的输出电流范围内减小输入和输出之间的偏移电压。 晶体管（Q1），（Q2）和（Q3）的尺寸比为m：n：1，晶体管（Q6）和（Q7）的尺寸比为1：p，晶体管（Q4）和（Q5） 尺寸比{（m + n + 1）/ p：}）。 因此，将在晶体管（Q3）中流动的电流（m + n + 1）的电流提供给晶体管（Q1）和（Q2）的发射极。 由于在晶体管（Q1）和（Q2）中流动的电流之间的比例与它们的尺寸比m：n相同，晶体管（Q1）和（Q2）之间的发射极 - 基极电压相等。 结果，输出到输入信号线（IN）的电压信号与从输出信号线（OUT）输出的电压信号之间的偏移电压可以在宽的输出电流范围内被抑制。

公开(公告)号：US06208011B1

公开(公告)日：2001-03-27

申请号：US09325383

申请日：1999-06-04

Applicant: Yukio Yasuda

Inventor： Yukio Yasuda

IPC: H01L2900

CPC classification number: H01L29/7808 ,  H01L27/0255 ,  H01L27/0629 ,  H01L29/7395 ,  H03K17/08122 ,  H03K17/08128

Abstract: The present invention provides a power semiconductor device comprising a semiconductor substrate; a voltage-controlled transistor comprising a first electrode formed on the lower surface of the semiconductor substrate, a gate formed on the semiconductor substrate with a gate oxide interpolated in between and a second electrode formed on the semiconductor substrate; and a zener diode formed on the upper surface of the semiconductor substrate so as to be connected between the gate and the second electrode; wherein p-type regions and n-type regions alternately formed between the zener diode and the second electrode on the semiconductor substrate, a plurality of pad electrodes on the semiconductor substrate provided with the alternate p-type regions and n-type regions so as to allow one or not less than two diodes are series connected between the zener diode and the second electrode, and the distance between the adjacent pad electrodes is set so that when the diode is subjected to a current not less than a predetermined value, the respective pad electrodes are fused so that short-circuiting occurs between the adjacent pad electrodes.

Abstract translation: 本发明提供一种包括半导体衬底的功率半导体器件; 电压控制晶体管，包括形成在所述半导体衬底的下表面上的第一电极，在所述半导体衬底上形成有栅极氧化物的栅极氧化物，以及形成在所述半导体衬底上的第二电极; 以及形成在所述半导体衬底的上表面上以便连接在所述栅极和所述第二电极之间的齐纳二极管; 其中在所述半导体衬底上的齐纳二极管和所述第二电极之间交替形成的p型区域和n型区域，所述半导体衬底上设置有多个p型区域和n型区域的多个焊盘电极，以便 允许在齐纳二极管和第二电极之间串联连接一个或不少于二个二极管，并且相邻焊盘电极之间的距离被设定为使得当二极管经受不小于预定值的电流时，相应的焊盘 电极被熔化，使得在相邻的焊盘电极之间发生短路。