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公开(公告)号：US5589735A
公开(公告)日：1996-12-31
申请号：US506829
申请日：1995-07-25
申请人： Akiyasu Yamaguchi , Yukio Yasuda , Tsuneo Okanuma , Tatsushi Igarashi , Hiromitsu Matsuno , Tatsumi Hiramoto
发明人： Akiyasu Yamaguchi , Yukio Yasuda , Tsuneo Okanuma , Tatsushi Igarashi , Hiromitsu Matsuno , Tatsumi Hiramoto
CPC分类号： G03F7/70016 , H01J61/30 , H01J61/74
摘要： An emission device which operates a cadmium lamp with a light intensity sufficient for used in industrial applications is achieved by an emission device having a cadmium lamp with a fluorescent tube within which a cathode and an anode are space a small distance apart and a buffer gas for easier initiation of luminous operation and metallic cadmium in an amount per unit volume of the fluorescent tube of 1.times.10.sup.-4 g/cm.sup.3 to 3.times.10.sup.-3 g/cm.sup.3 are encapsulated, and a power source device for supplying an electrical input between the cathode and the anode in an electrical input range from 0.5 kW to 5.0 kW with the condition:6.03+2.79 W.ltoreq.r.ltoreq.40being satisfied, where the electrical input of the power source device into the cadmium lamp in steady-state luminous operation is W (kW) and the maximum inside radius of the fluorescent tube is r (mm).
摘要翻译： 操作具有足以用于工业应用的光强度的镉灯的发射装置通过具有镉灯的发射装置来实现，所述镉灯具有荧光管，阴极和阳极间隔开小间隔，并且缓冲气体用于 封装了1×10 -4 g / cm 3〜3×10 -3 g / cm 3的荧光灯的单位体积的发光操作的更容易的起始和金属镉，以及用于在阴极和阴极之间提供电输入的电源装置 在0.5kW至5.0kW的电输入范围内的阳极，条件为：6.03 + 2.79W
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公开(公告)号：US5481159A
公开(公告)日：1996-01-02
申请号：US237906
申请日：1994-05-04
CPC分类号： G03F7/70016 , H01J61/18 , H01J61/82 , H01J61/86
摘要： A discharge lamp uses resonance lines which are emitted by ions in an excitation state and has a high short wave ultraviolet ray output. The lamp is provided with a pair of electrodes, having a reciprocal spacing of equal to or smaller than 12 mm, and is of the electrode-stable type. As the major emission material, cadmium is encapsulated in a quantity permitting a partial pressure P in operation of 3.times.10.sup.3 Pa to 1.3.times.10.sup.5 Pa. The lighting operation is performed in a state in which a lamp current J.sub.L fulfills the following condition (a):0.7
摘要翻译： 放电灯使用由激发状态的离子发射并具有高短波紫外线输出的谐振线。 该灯具有一对电极，具有等于或小于12mm的往复间隔，并且是电极稳定型的。 作为主要的发光材料，镉以3×10 3 Pa〜1.3×10 5 Pa的运转状态下的分压P被包封，在灯电流JL满足以下条件（a）的状态下进行点亮操作：0.7
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公开(公告)号：US5510158A
公开(公告)日：1996-04-23
申请号：US348259
申请日：1994-11-28
CPC分类号： H01L21/31138 , B08B7/0057 , C03C23/0075 , C23G5/00
摘要： An oxidation process for an article to be treated in which, by generating ozone with a high concentration, a high treatment rate is achieved. In particular, an oxygen-containing fluid is irradiated with a vacuum ultraviolet rays emitted from a dielectric barrier discharge lamp in which xenon gas is encapsulated, producing a photochemical reaction from which ozone and an activated oxygen result. By causing this ozone and activated oxygen to contact the surface of the article to be treated, the surface of the article is oxidized. An even higher treatment rate can be achieved by generating the activated oxygen with the simultaneous use of a far ultraviolet ray source, thereby increasing the activity of the activated oxygen. Advantageously, the oxidation of the article to be treated with the vacuum ultraviolet rays and far ultraviolet rays is performed in accordance with the relationship:(p.times.d)/(1+I.sup.1/2)=0.33where I is a radiation density (mW/cm.sup.2) of the far ultraviolet rays on a surface of the article to be treated in which there is no light absorption between the far ultraviolet ray source and the surface of the article to be treated, d is a shortest distance (cm) of passage of the vacuum ultraviolet rays emitted from the dielectric barrier discharge lamp to the surface of the article to be treated, and p is an oxygen partial pressure (atm) of the oxygen-containing gas, which is present between the dielectric barrier discharge lamp and the article to be treated.
摘要翻译： 通过产生高浓度臭氧，处理率高的待处理物品的氧化处理。 特别地，从包封有氙气的电介质阻挡放电灯发出的真空紫外线照射含氧流体，产生产生臭氧和活性氧的光化学反应。 通过使该臭氧和活性氧与被处理物的表面接触，制品的表面被氧化。 通过同时使用远紫外线源产生活性氧，从而提高活性氧的活性，可以实现更高的治疗率。 有利地，根据以下关系进行用真空紫外线和远紫外线处理的制品的氧化：（pxd）/（1 + I1 / 2）= 0.33其中I是辐射密度（mW / cm2 ）在远紫外线源和被处理物的表面之间不存在光吸收的待处理物品的表面上的远紫外线的距离d为通过的最短距离（cm） 从介电阻挡放电灯发射到待处理物体的表面的真空紫外线，p是存在于电介质阻挡放电灯与制品之间的含氧气体的氧分压（atm）， 被处理。
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公开(公告)号：US5444331A
公开(公告)日：1995-08-22
申请号：US184143
申请日：1994-01-21
CPC分类号： H01J61/26 , H01J65/046
摘要： A dielectric barrier discharge lamp has a discharge vessel having a discharge chamber filled with a discharge gas. Excimer molecules are developed due to a dielectric barrier discharge. The discharge vessel is equipped with a window for the output of the light radiated from the excimer molecules. A getter space, equipped with a getter, communicates with the discharge chamber. A common wall separates the discharge chamber from the getter space, or a separately arranged getter space is connected to the discharge chamber via a tube. In one form, the discharge vessel and window is made of quartz glass containing less than 10 ppm of OH radicals by weight.
摘要翻译： 电介质阻挡放电灯具有放电室，其具有填充有放电气体的放电室。 由于介电阻挡放电，准分子发展。 放电容器配备有用于输出从准分子分子辐射的光的窗口。 配有吸气剂的吸气室与排气室相通。 一个普通的墙将排气室与吸气剂空间分开，或者一个单独布置的吸气室通过一个管连接到排气室。 在一种形式中，放电容器和窗户由含有少于10ppm重量的OH自由基的石英玻璃制成。
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公开(公告)号：US5581152A
公开(公告)日：1996-12-03
申请号：US303033
申请日：1994-09-08
申请人： Hiromitsu Matsuno , Tatsushi Igarashi , Tatsumi Hiramoto , Fumitoshi Takemoto , Nobuyuki Hishinuma , Yasuo Oonishi , Kunio Kasagi , Takashi Asahina , Yasuhiko Wakahata
发明人： Hiromitsu Matsuno , Tatsushi Igarashi , Tatsumi Hiramoto , Fumitoshi Takemoto , Nobuyuki Hishinuma , Yasuo Oonishi , Kunio Kasagi , Takashi Asahina , Yasuhiko Wakahata
IPC分类号： H01J65/00 , H01J65/04 , H01J61/067
CPC分类号： H01J65/046 , H01J65/00
摘要： In a dielectric barrier discharge lamp, in which a discharge vessel, in which a discharge gas forming "excimer" molecules is encapsulated, is provided with a dielectric provided with a netlike electrode and a window, through which the light goes, the first object of the invention is achieved by an arrangement in which a thickness of ends of the above-described netlike electrodes is greater than the average thickness of the entire electrode. Another object of the invention is achieved by an arrangement in which a holder incorporated in the discharge vessel has an outer dimension that is less than/equal to an outer dimension of the netlike electrodes. A further object of the invention is achieved by an arrangement by which the discharge vessel has a hollow cylindrical shape formed from an external tube and an internal tube and a means for hermetic sealing is arranged inside the internal tube.
摘要翻译： 在其中封装了形成“准分子”分子的放电气体的放电容器的电介质阻挡放电灯中，设置有电介质，所述电介质设置有网状电极和窗，光通过该电介质，第一物体 本发明通过上述网状电极的端部的厚度大于整个电极的平均厚度的结构来实现。 本发明的另一个目的是通过一种结构实现的，其中结合在放电容器中的保持器的外形尺寸小于/等于网状电极的外部尺寸。 本发明的另一个目的是通过这样一种布置实现放电容器具有由外管和内管形成的中空圆筒形状，并且用于气密密封的装置设置在内管的内部。
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公开(公告)号：US06573658B1
公开(公告)日：2003-06-03
申请号：US09468829
申请日：1999-12-22
IPC分类号： H01J1720
CPC分类号： G03F7/70016 , H01J61/20 , H01J61/822
摘要： A mercury lamp of the short arc type which can stably emit an intense spectrum at a wavelength of 365 nm with an extremely narrowed band region over a long time, and which has an anode and a cathode disposed opposite one another in a silica glass arc tube which is filled with mercury and a rare gas, is achieved by the amount of mercury being less than or equal to 1.0 mg/cc of the inside volume of the arc tube and at least one of the gases argon (Ar) and krypton (Kr) are used as the rare gas at room temperature with 1.0 to 8.0 atm.
摘要翻译： 一种短弧型的水银灯，其能够长时间地以极窄的带状区域稳定地发射波长365nm的强光谱，并且在石英玻璃电弧管中具有彼此相对设置的阳极和阴极 通过汞的量小于或等于1.0mg / cc的电弧管的内部体积和至少一种气体氩（Ar）和氪（Kr）来实现，其中填充有汞和稀有气体 ）在室温下用作1.0〜8.0atm的稀有气体。
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公开(公告)号：US4500565A
公开(公告)日：1985-02-19
申请号：US536517
申请日：1983-09-28
申请人： Tatsumi Hiramoto
发明人： Tatsumi Hiramoto
IPC分类号： C23C16/48 , H01J37/32 , H01L21/205 , B05D3/06
CPC分类号： C23C16/482 , H01J37/32 , H01L21/02381 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： Disclosed herein is a deposition process which comprises, in an air-tight reaction vessel, generating a plasma through a discharge gas by means of a discharge system, disposing a substrate at a position apart from the plasma by a distance greater than the mean free path of species produced by the plasma in such a state that the substrate can be exposed directly to light radiated from the plasma, feeding a carrier gas and photoreactive gas in such a manner that they flow along the substrate, and causing the photoreactive gas to undergo a reaction by the light from the plasma to deposit the reaction product on the substrate. In the deposition process the substrate and a film deposited thereon are prevented from contamination or damage by charged particles. Electrodes are kept free from deposition of the reaction product, thereby allowing to conduct the deposition operation for a long period of time without need for cleaning them frequently.
摘要翻译： 本文公开了一种沉积方法，其包括在气密反应容器中，通过放电系统通过放电气体产生等离子体，将衬底设置在离离子等离子体的位置大于平均自由程 在等离子体中产生的物质，使得基板可以直接暴露于从等离子体辐射的光的状态，以这样的方式供给载气和光反应气体，使得它们沿着基板流动，并使光反应气体经历 通过来自等离子体的光的反应将反应产物沉积在基底上。 在沉积过程中，防止沉积在其上的基底和膜被带电粒子污染或损坏。 电极不会沉积反应产物，从而允许长时间的沉积操作，而不需要经常清洗它们。
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公开(公告)号：US4704346A
公开(公告)日：1987-11-03
申请号：US868690
申请日：1986-05-30
申请人： Tatsumi Hiramoto , Ikuo Iwai , Masachika Ohyama , Mitsuo Narita
发明人： Tatsumi Hiramoto , Ikuo Iwai , Masachika Ohyama , Mitsuo Narita
CPC分类号： G03F7/70016
摘要： A semiconductor wafer can be exposed by arranging a combination of electrodes in an opposed relation with an interelectrode distance of not more than 15 mm in a closed discharge cavity, enclosing, within the cavity, mercury as a light-emitting discharge component in an amount such that the vapor pressure of mercury reaches 0.4-5 atms during discharge lighting, forming a discharge between the combination of electrodes while controlling the discharge current at not less than 10 A, and irradiating light, which has been radiated as a result of the discharge and contains at least one of light components having wave-lengths of 405 nm and 436 nm respectively, onto the surface of a photoresist applied on the semiconductor wafer through a photomask or reticle and a lens which permits transmission of the light having wavelength of 405 nm or 436 nm therethrough.
摘要翻译： 半导体晶片可以通过在封闭的放电空腔中以相对的关系布置电极的组合，在封闭的放电空腔内封闭，作为发光放电部件的水银作为发光放电部件 在放电照明期间汞的蒸气压达到0.4-5atms，在控制放电电流不小于10A的同时在电极组合之间形成放电，并且照射由于放电而放射的光;以及 通过光掩模或掩模版和透镜，在波长为405nm的透镜和透镜上分别具有波长为405nm和436nm的光分量中的至少一种， 436 nm。
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公开(公告)号：US4482395A
公开(公告)日：1984-11-13
申请号：US485373
申请日：1983-04-15
申请人： Tatsumi Hiramoto
发明人： Tatsumi Hiramoto
IPC分类号： H01L21/20 , H01L21/26 , H01L21/268 , H01L21/324
CPC分类号： H01L21/2686 , Y10S117/904
摘要： An annealing method wherein an elongated irradiation area is formed by a light source whose emitted light is controlled so that a peak curve of the illuminance distribution in the area may be substantially linear and that equiluminous curves near the peak curve may be substantially parallel therewith. A semiconductor wafer and the irradiation area are moved relative to each other in such a manner that the entire area of the semiconductor wafer to be annealed may cross all the equiluminous curves, thereby to achieving the annealing of the semiconductor wafer. With this annealing method, semiconductor crystals are satisfactorily recovered from damages incidental to ion implantation into the semiconductor wafer and polycrystalline or amorphous semiconductors are converted into single crystal semiconductors of good quality.
摘要翻译： 一种退火方法，其中通过光源形成细长的照射区域，其发射光被控制，使得该区域中的照度分布的峰值曲线可以基本上是线性的，并且峰值曲线附近的平衡曲线可以与其基本平行。 半导体晶片和照射区域相对于彼此移动，使得要退火的半导体晶片的整个区域可以跨越所有的平均曲线，从而实现半导体晶片的退火。 利用这种退火方法，半导体晶体从离子注入到半导体晶片的损害中被令人满意地恢复，并且将多晶或非晶半导体转换成质量好的单晶半导体。
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公开(公告)号：US4468260A
公开(公告)日：1984-08-28
申请号：US480082
申请日：1983-03-29
申请人： Tatsumi Hiramoto
发明人： Tatsumi Hiramoto
IPC分类号： H01L21/22 , H01L21/225 , H01L21/26 , H01L21/268 , H01L21/265
CPC分类号： H01L21/2255 , H01L21/2253 , H01L21/2686
摘要： Dopant atoms are diffused into a silicon wafer by heating the entirety of the silicon wafer with the dopant atoms to a predetermined diffusing temperature in a short period of time, and more specifically, by applying light onto the silicon wafer under such conditions that the temperature difference between a central part of the silicon wafer and its peripheral part is maintained within 65.degree. C. The above diffusion method permits to carry out diffusion of the dopant atoms into silicon wafers with high productivity but without inducing physical defects such as warping or slip lines. It requires a very short time period for effecting diffusion to a desired extent and it enables to make the depth of diffusion greater.
摘要翻译： 掺杂原子通过在短时间内将具有掺杂剂原子的整个硅晶片加热至预定的扩散温度而扩散到硅晶片中，更具体地，通过在硅晶片上施加光，使得温度差 在硅晶片的中心部分与其周边部分之间保持在65℃以内。上述扩散方法允许以高生产率将掺杂剂原子扩散到硅晶片中，但不引起物理缺陷如翘曲或滑移线。 它需要非常短的时间来实现扩散到期望的程度，并且其能够使扩散深度更大。
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