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    Nonvolatile memory device having a current limiting element
    22.
    发明授权
    Nonvolatile memory device having a current limiting element 有权
    具有限流元件的非易失性存储器件

    公开(公告)号：US08681530B2

    公开(公告)日：2014-03-25

    申请号：US13353000

    申请日：2012-01-18

    申请人： Yun Wang ,  Imran Hashim ,  Tony Chiang

    发明人： Yun Wang ,  Imran Hashim ,  Tony Chiang

    IPC分类号： G11C11/00 ,  H01L29/02

    CPC分类号： H01L45/1253 ,  G11C13/0007 ,  G11C13/003 ,  G11C2213/56 ,  G11C2213/76 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146 ,  H01L45/148 ,  H01L45/1616

    摘要： Embodiments of the invention generally include a method of forming a nonvolatile memory device that contains a resistive switching memory element that has an improved device switching performance and lifetime, due to the addition of a current limiting component disposed therein. In one embodiment, the current limiting component comprises at least one layer of resistive material that is configured to improve the switching performance and lifetime of the formed resistive switching memory element. The electrical properties of the formed current limiting layer, or resistive layer, are configured to lower the current flow through the variable resistance layer during the logic state programming steps (i.e., “set” and “reset” steps) by adding a fixed series resistance in the formed resistive switching memory element found in the nonvolatile memory device.

    摘要翻译： 本发明的实施例通常包括一种形成非易失性存储器件的方法，该非易失性存储器件包含由于添加限定在其中的限流部件而具有改进的器件切换性能和寿命的电阻式开关存储元件。 在一个实施例中，限流部件包括至少一层电阻材料，其被配置为提高所形成的电阻式开关存储元件的开关性能和寿命。 所形成的限流层或电阻层的电性能被配置为在逻辑状态编程步骤（即“设定”和“复位”步骤）期间通过添加固定的串联电阻来降低通过可变电阻层的电流 在形成在非易失性存储器件中的电阻式开关存储元件中。

    WORK FUNCTION TAILORING FOR NONVOLATILE MEMORY APPLICATIONS
    23.
    发明申请
    WORK FUNCTION TAILORING FOR NONVOLATILE MEMORY APPLICATIONS 有权
    用于非易失性存储器应用的工作功能定制

    公开(公告)号：US20120313069A1

    公开(公告)日：2012-12-13

    申请号：US13156624

    申请日：2011-06-09

    申请人： Yun Wang ,  Tony Chiang ,  Imran Hashim

    发明人： Yun Wang ,  Tony Chiang ,  Imran Hashim

    IPC分类号： H01L47/00

    CPC分类号： H01L45/1608 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/065 ,  H01L45/10 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/16 ,  H01L45/1616 ,  H01L45/1633 ,  H01L45/1641

    摘要： Embodiments of the invention generally relate to a resistive switching nonvolatile memory device having an interface layer structure disposed between at least one of the electrodes and a variable resistance layer formed in the nonvolatile memory device, and a method of forming the same. Typically, resistive switching memory elements may be formed as part of a high-capacity nonvolatile memory integrated circuit, which can be used in various electronic devices, such as digital cameras, mobile telephones, handheld computers, and music players. In one configuration of the resistive switching nonvolatile memory device, the interface layer structure comprises a passivation region, an interface coupling region, and/or a variable resistance layer interface region that are configured to adjust the nonvolatile memory device's performance, such as lowering the formed device's switching currents and reducing the device's forming voltage, and reducing the performance variation from one formed device to another.

    摘要翻译： 本发明的实施例一般涉及具有设置在至少一个电极和形成在非易失性存储器件中的可变电阻层之间的界面层结构的电阻式开关非易失性存储器件及其形成方法。 通常，电阻式开关存储器元件可以形成为可用于各种电子设备（例如数码相机，移动电话，手持式计算机和音乐播放器）的大容量非易失性存储器集成电路的一部分。 在电阻式开关非易失性存储器件的一种结构中，界面层结构包括钝化区域，界面耦合区域和/或可变电阻层接口区域，其被配置为调整非易失性存储器件的性能，例如降低形成 器件的开关电流并降低器件的成型电压，并降低从一个成形器件到另一个器件的性能变化。

    DEFECT GRADIENT TO BOOST NONVOLATILE MEMORY PERFORMANCE
    24.
    发明申请
    DEFECT GRADIENT TO BOOST NONVOLATILE MEMORY PERFORMANCE 有权
    缺陷增强非易失性存储器性能

    公开(公告)号：US20130056700A1

    公开(公告)日：2013-03-07

    申请号：US13223950

    申请日：2011-09-01

    申请人： Yun Wang ,  Tony Chiang ,  Imran Hashim

    发明人： Yun Wang ,  Tony Chiang ,  Imran Hashim

    IPC分类号： H01L45/00

    CPC分类号： H01L45/122 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/146 ,  H01L45/1608

    摘要： Embodiments of the present invention generally relate to a resistive switching nonvolatile memory element that is formed in a resistive switching memory device that may be used in a memory array to store digital data. The memory element is generally constructed as a metal-insulator-metal stack. The resistive switching portion of the memory element includes a getter portion and/or a defect portion. In general, the getter portion is an area of the memory element that is used to help form, during the resistive switching memory device's fabrication process, a region of the resistive switching layer that has a greater number of vacancies or defects as compared to the remainder of resistive switching layer. The defect portion is an area of the memory element that has a greater number of vacancies or defects as compared to the remainder of the resistive switching layer, and is formed during the resistive switching memory device's fabrication process. The addition of the getter or defect portions in a formed memory device generally improves the reliability of the resistive switching memory device, improves the switching characteristics of the formed memory device and can eliminate or reduce the need for the time consuming additional post fabrication “burn-in” or pre-programming steps.

    摘要翻译： 本发明的实施例一般涉及一种电阻式开关非易失性存储元件，其形成在电阻式开关存储器件中，其可用于存储阵列中以存储数字数据。 存储元件通常构造为金属 - 绝缘体 - 金属叠层。 存储元件的电阻开关部分包括吸气部分和/或缺陷部分。 通常，吸气剂部分是存储元件的区域，其用于帮助在电阻式开关存储器件的制造过程期间形成与其余部分相比具有更多数量的空位或缺陷的电阻式开关层的区域 的电阻式开关层。 缺陷部分是与电阻开关层的其余部分相比具有更多数量的空位或缺陷的存储元件的区域，并且在电阻式开关存储器件的制造过程期间形成。 吸收剂或缺陷部分在形成的存储器件中的添加通常提高了电阻式开关存储器件的可靠性，改进了所形成的存储器件的开关特性，并且可以消除或减少对耗时的附加后制造烧坏的需要 或预编程步骤。

    NONVOLATILE MEMORY DEVICE HAVING A CURRENT LIMITING ELEMENT
    25.
    发明申请
    NONVOLATILE MEMORY DEVICE HAVING A CURRENT LIMITING ELEMENT 有权
    具有电流限制元件的非易失性存储器件

    公开(公告)号：US20130028003A1

    公开(公告)日：2013-01-31

    申请号：US13353000

    申请日：2012-01-18

    申请人： Yun Wang ,  Imran Hashim ,  Tony Chiang

    发明人： Yun Wang ,  Imran Hashim ,  Tony Chiang

    IPC分类号： H01L45/00 ,  H01L21/8239 ,  G11C11/21

    CPC分类号： H01L45/1253 ,  G11C13/0007 ,  G11C13/003 ,  G11C2213/56 ,  G11C2213/76 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146 ,  H01L45/148 ,  H01L45/1616

    摘要： Embodiments of the invention generally include a method of forming a nonvolatile memory device that contains a resistive switching memory element that has an improved device switching performance and lifetime, due to the addition of a current limiting component disposed therein. In one embodiment, the current limiting component comprises at least one layer of resistive material that is configured to improve the switching performance and lifetime of the formed resistive switching memory element. The electrical properties of the formed current limiting layer, or resistive layer, are configured to lower the current flow through the variable resistance layer during the logic state programming steps (i.e., “set” and “reset” steps) by adding a fixed series resistance in the formed resistive switching memory element found in the nonvolatile memory device.

    摘要翻译： 本发明的实施例通常包括一种形成非易失性存储器件的方法，该非易失性存储器件包含由于添加限定在其中的限流部件而具有改进的器件切换性能和寿命的电阻式开关存储元件。 在一个实施例中，限流部件包括至少一层电阻材料，其被配置为提高所形成的电阻式开关存储元件的开关性能和寿命。 形成的限流层或电阻层的电性能被配置为通过在形成的电阻中添加固定的串联电阻来在逻辑状态编程步骤（即，设置和复位步骤）期间降低通过可变电阻层的电流 在非易失性存储器件中发现的切换存储器元件。

    Nonvolatile memory device using a tunnel oxide as a current limiter element
    27.
    发明授权
    Nonvolatile memory device using a tunnel oxide as a current limiter element 有权
    使用隧道氧化物作为电流限制器元件的非易失性存储器件

    公开(公告)号：US08698119B2

    公开(公告)日：2014-04-15

    申请号：US13354006

    申请日：2012-01-19

    申请人： Mihir Tendulkar ,  Imran Hashim ,  Yun Wang

    发明人： Mihir Tendulkar ,  Imran Hashim ,  Yun Wang

    IPC分类号： H01L29/04 ,  H01L47/00 ,  H01L21/20 ,  G11C11/00

    CPC分类号： H01L45/08 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1608 ,  H01L45/1616

    摘要： Embodiments of the invention generally include a method of forming a nonvolatile memory device that contains a resistive switching memory element that has improved device switching performance and lifetime, due to the addition of a current limiting component disposed therein. The electrical properties of the current limiting component are configured to lower the current flow through the variable resistance layer during the logic state programming steps by adding a fixed series resistance in the resistive switching memory element of the nonvolatile memory device. In one embodiment, the current limiting component comprises a tunnel oxide that is a current limiting material disposed within a resistive switching memory element in a nonvolatile resistive switching memory device. Typically, resistive switching memory elements may be formed as part of a high-capacity nonvolatile memory integrated circuit, which can be used in various electronic devices, such as digital cameras, mobile telephones, handheld computers, and music players.

    摘要翻译： 本发明的实施例通常包括形成非易失性存储器件的方法，该非易失性存储器件包含由于添加限定在其中的限流部件的添加而具有改进的器件切换性能和寿命的电阻式开关存储元件。 限流部件的电气特性被配置为在逻辑状态编程步骤期间通过在非易失性存储器件的电阻式开关存储器元件中添加固定串联电阻来降低通过可变电阻层的电流。 在一个实施例中，限流部件包括隧道氧化物，隧道氧化物是设置在非易失性电阻式开关存储器件中的电阻式开关存储器元件内的限流材料。 通常，电阻式开关存储器元件可以形成为可用于各种电子设备（例如数码相机，移动电话，手持式计算机和音乐播放器）的大容量非易失性存储器集成电路的一部分。

    Nonvolatile memory device using a varistor as a current limiter element
    28.
    发明授权
    Nonvolatile memory device using a varistor as a current limiter element 有权
    使用压敏电阻作为限流元件的非易失性存储器件

    公开(公告)号：US08686386B2

    公开(公告)日：2014-04-01

    申请号：US13399815

    申请日：2012-02-17

    申请人： Mihir Tendulkar ,  Imran Hashim ,  Yun Wang

    发明人： Mihir Tendulkar ,  Imran Hashim ,  Yun Wang

    IPC分类号： H01L29/02 ,  H01L47/00 ,  H01L29/04 ,  H01L29/06

    CPC分类号： H01L45/1608 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1616

    摘要： Embodiments of the invention include a method of forming a nonvolatile memory device that contains a resistive switching memory element that has improved device switching performance and lifetime, due to the addition of a current limiting component disposed therein. The electrical properties of the current limiting component are configured to lower the current flow through the variable resistance layer during the logic state programming steps by adding a fixed series resistance in the resistive switching memory element of the nonvolatile memory device. In some embodiments, the current limiting component comprises a varistor that is a current limiting material disposed within a resistive switching memory element in a nonvolatile resistive switching memory device. Typically, resistive switching memory elements may be formed as part of a high-capacity nonvolatile memory integrated circuit, which can be used in various electronic devices, such as digital cameras, mobile telephones, handheld computers, and music players.

    摘要翻译： 本发明的实施例包括一种形成非易失性存储器件的方法，该非易失性存储器件包含由于添加设置在其中的限流部件而具有改进的器件切换性能和寿命的电阻式开关存储元件。 限流部件的电气特性被配置为在逻辑状态编程步骤期间通过在非易失性存储器件的电阻式开关存储器元件中添加固定串联电阻来降低通过可变电阻层的电流。 在一些实施例中，限流部件包括变阻器，其是设置在非易失性电阻式开关存储器件中的电阻式开关存储器元件内的限流材料。 通常，电阻式开关存储器元件可以形成为可用于各种电子设备（例如数码相机，移动电话，手持式计算机和音乐播放器）的大容量非易失性存储器集成电路的一部分。

    Nonvolatile resistive memory element with an integrated oxygen isolation structure
    29.
    发明授权
    Nonvolatile resistive memory element with an integrated oxygen isolation structure 有权
    具有集成氧隔离结构的非易失性电阻式存储元件

    公开(公告)号：US08878152B2

    公开(公告)日：2014-11-04

    申请号：US13408103

    申请日：2012-02-29

    申请人： Yun Wang ,  Tony P. Chiang ,  Imran Hashim ,  Dipankar Pramanik

    发明人： Yun Wang ,  Tony P. Chiang ,  Imran Hashim ,  Dipankar Pramanik

    IPC分类号： H01L29/02

    CPC分类号： H01L45/16 ,  H01L27/2463 ,  H01L45/10 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1675

    摘要： A nonvolatile resistive memory element includes one or more novel oxygen isolation structures that protect the resistive switching material of the memory element from oxygen migration. One such oxygen isolation structure comprises an oxygen barrier layer that isolates the resistive switching material from other portions of the resistive memory device during fabrication and/or operation of the memory device. Another such oxygen isolation structure comprises a sacrificial layer that reacts with unwanted oxygen migrating toward the resistive switching material during fabrication and/or operation of the memory device.

    摘要翻译： 非易失性电阻存储元件包括一个或多个新颖的氧隔离结构，其保护存储元件的电阻开关材料免于氧迁移。 一个这样的氧隔离结构包括氧阻隔层，其在制造和/或操作存储器件期间将电阻性开关材料与电阻式存储器件的其它部分隔离。 另一种这样的氧隔离结构包括牺牲层，其在存储器件的制造和/或操作期间与向电阻开关材料迁移的不想要的氧化反应。