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公开(公告)号:US5626963A
公开(公告)日:1997-05-06
申请号:US259480
申请日:1994-06-14
IPC分类号: C23C14/00 , C23C16/02 , C23C16/26 , C23C16/458 , C23C16/511 , H01J37/32
CPC分类号: H01J37/32192 , C23C14/0021 , C23C16/0272 , C23C16/029 , C23C16/26 , C23C16/4588 , C23C16/511 , H01J37/32706 , H01J37/32733 , H01J2237/3321 , Y10T428/265 , Y10T428/30 , Y10T428/31678
摘要: A hard-carbon-film-coated substrate includes in stacked sequence a substrate, an intermediate layer, and a hard carbon film. The substrate consists of a metal or an alloy mainly composed of Ni or Al, or stainless steel. The intermediate layer is mainly composed of Ru, Si, Ge or carbon, or is a mixed layer including Ru, Si, or Ge mixed with at least one of carbon, nitrogen or oxygen, with a composition gradient across its thickness. An apparatus for forming the coated substrate especially includes means for forming the intermediate layer and means for forming the hard carbon film in the same vacuum chamber.
摘要翻译: 硬碳膜涂布基板以堆叠顺序包括基板,中间层和硬碳膜。 基体由主要由Ni或Al或不锈钢构成的金属或合金组成。 中间层主要由Ru,Si,Ge或碳组成,或者是包含与碳,氮或氧中的至少一种混合的Ru,Si或Ge的混合层,其厚度为组成梯度。 用于形成涂覆基材的装置特别包括用于形成中间层的装置和用于在同一真空室中形成硬碳膜的装置。
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公开(公告)号:US5064682A
公开(公告)日:1991-11-12
申请号:US601627
申请日:1990-10-23
申请人: Seiichi Kiyama , Hitoshi Hirano
发明人: Seiichi Kiyama , Hitoshi Hirano
CPC分类号: C23C14/22 , C23C14/0605 , C23C14/221
摘要: A method of forming a pseudo-diamond film on a base body, the method comprising a first step of irradiating carbon ions onto a surface of a base body from an assisting ion gun to form a mixture layer comprising base body material atoms and carbon atoms; a second step of simultaneously vapor-depositing the carbon atoms from a vapor deposition source and irradiating hydrogen ions from the assisting ion gun onto the mixture layer to form pseudo-diamond cores on the mixtures layer; and a third step of vapor-depositing carbon atoms from the vapor deposition source and irradiating hydrogen ions from the assisting ion gun onto the pseudo-diamond cores to form a pseudo-diamond film on the pseudo-diamond cores.
摘要翻译: 一种在基体上形成假金刚石膜的方法,所述方法包括:从辅助离子枪将碳离子照射到基体表面上以形成包含基体材料原子和碳原子的混合层的第一步骤; 同时从气相沉积源气相沉积碳原子并将辅助离子枪的氢离子照射到混合物层上以在混合物层上形成伪金刚石核心的第二步骤; 以及从气相沉积源气相沉积碳原子并将辅助离子枪的氢离子照射到伪金刚石核心上以在伪菱形核上形成伪金刚石膜的第三步骤。
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公开(公告)号:US4668840A
公开(公告)日:1987-05-26
申请号:US749888
申请日:1985-06-27
申请人: Seiichi Kiyama , Hitoshi Kihara , Hideki Imai
发明人: Seiichi Kiyama , Hitoshi Kihara , Hideki Imai
IPC分类号: H01L27/142 , H01L31/20 , H01L27/14
CPC分类号: H01L31/202 , H01L31/022425 , H01L31/046 , H01L31/0463 , H01L31/0465 , Y02E10/50 , Y02P70/521 , Y10S438/94
摘要: A photovoltaic device comprises a plurality of photoelectric converting regions formed on an insulating surface of a light transmissive substrate. Each photoelectric converting region includes a transparent film electrode, an amorphous semiconductor portion having a PIN junction parallel to the film surface and a back film electrode connected to the transparent film electrode of an adjacent region of the insulating surface. On a portion of the transparent film electrode, there is formed an insulating adiabatic layer. The adiabatic layer is formed at a position where an energy beam to be irradiated in the production process. Accordingly, when the energy beam is irradiated and the back electrode film is divided corresponding to each photoelectric converting region, thermal damage to the transparent film electrode due to the energy beam is prevented by the insulating adiabatic layer.
摘要翻译: 光电器件包括形成在透光基板的绝缘表面上的多个光电转换区域。 每个光电转换区域包括透明膜电极,具有与膜表面平行的PIN结的非晶半导体部分和与绝缘表面的相邻区域的透明膜电极连接的背膜电极。 在透明膜电极的一部分上形成绝热绝热层。 绝热层形成在生产过程中要照射的能量束的位置。 因此,当照射能量束并且对应于每个光电转换区划分背面电极膜时,通过绝热绝热层防止由于能量束对透明膜电极的热损伤。
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