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21.发明授权公开(公告)号：US12068268B2
公开(公告)日：2024-08-20
申请号：US18169889
申请日：2023-02-16
发明人： Morio Iwamizu
IPC分类号： H01L23/00
CPC分类号： H01L24/05 , H01L24/45 , H01L2224/02205 , H01L2224/02381 , H01L2224/04042 , H01L2224/05647 , H01L2224/4847 , H01L2224/48647
摘要： A semiconductor device includes first conductive films that are provided, above a semiconductor substrate, at least on both sides of a non-formation region in which the first conductive films are not provided; an interlayer dielectric film including a first portion that is provided on the non-formation region, second portions provided above the first conductive film on both sides of the non-formation region, and a step portion that connects the first portion and the second portions; a second conductive film provided above the interlayer dielectric film; through terminal portions that penetrate the second portions of the interlayer dielectric film; and a wire bonded with the second conductive film above the first portion, where the through terminal portions include one or more first through terminal portions and one or more second through terminal portions being provided at positions opposite to each other with a bonded portion of the wire being interposed therebetween.
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公开(公告)号：US12062976B2
公开(公告)日：2024-08-13
申请号：US17703486
申请日：2022-03-24
CPC分类号： H02M1/4225 , H02M1/08 , H02M3/33571 , H04N5/63
摘要： A power supply circuit of a step-down type, configured to generate an output voltage at a predetermined level from an alternating current (AC) voltage. The power supply circuit includes a rectifier circuit configured to rectify the AC voltage, a first line coupled to the rectifier circuit, a second line on a ground side, a switch coupled between the first line and the second line, and a control circuit configured to control the switch to bring a level of the output voltage to the predetermined level. The power supply circuit is free of an inductor interposed between the first line and the rectifier circuit.
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公开(公告)号：US20240264195A1
公开(公告)日：2024-08-08
申请号：US18397431
申请日：2023-12-27
发明人： Akira MORITA , Hojun YAMAUCHI , Yasuyuki MASUNAGA , Kazuhiro KOIZUMI , Masami KISHIRO , Hideo KANAI , Shiori YAMASHITA
IPC分类号： G01P5/24
CPC分类号： G01P5/245
摘要： An ultrasonic time measurement device measures a propagation time of a measurement wave transmitted from a first sensor to a second sensor. The device includes a transmission circuit that causes the first sensor to repeatedly transmit measurement waves one at a time and a reception circuit that detects reception at the second sensor, of the respective measurement wave transmitted from the first sensor. The device further measures elapsed times for the measurement waves, each of the elapsed times being an elapsed time from a reference time to a reception time of the respective measurement wave received by the second sensor and calculate the propagation time of the measurement wave from the first sensor to the second sensor based on the elapsed times measured by the time measurer.
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公开(公告)号：US20240258980A1
公开(公告)日：2024-08-01
申请号：US18521355
申请日：2023-11-28
发明人： Motomitsu IWAMOTO
IPC分类号： H03F3/45
CPC分类号： H03F3/45269 , H03F2203/45116
摘要： A control circuit configured to control an operational amplifier circuit that includes a first current source generating a first current according to a power supply voltage and a bias voltage, a first differential pair receiving a pair of input voltages and allowing the first current to flow therethrough, and a first output circuit applying an output voltage according to the input voltages to an output node. The control circuit includes: a second current source generating a second current according to the power supply voltage and the bias voltage; a second differential pair receiving the input voltages and allowing the second current to flow therethrough; and an output control circuit that causes a level at the output node to be a predetermined level, and causes the output voltage to be applied the output node, respectively before and after the level of the power supply voltage reaches a predetermined level.
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公开(公告)号：US20240258898A1
公开(公告)日：2024-08-01
申请号：US18517977
申请日：2023-11-22
发明人： Yuki KUMAZAWA
CPC分类号： H02M1/0009 , H02M1/088 , H02M7/539
摘要： A semiconductor device includes an output circuit and a switching element. The output circuit includes a switching element, a sense switching element, and a shunt breaking circuit. When an upper arm side switching element changes from an on-state to an off-state, a regenerative current flows from a load because of the regenerative operation of the load. In the output circuit, the shunt breaking circuit is located on the low potential side of a sense MOSFET in the sense switching element. As a result, a shunt of the regenerative current, which is generated at the time of the regenerative operation of the load, to the sense switching element is cut off by the shunt breaking circuit.
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公开(公告)号：US20240243093A1
公开(公告)日：2024-07-18
申请号：US18519652
申请日：2023-11-27
发明人： Koji OSAKI , Yuichiro HINATA
IPC分类号： H01L23/00
CPC分类号： H01L24/40 , H01L24/32 , H01L24/73 , H01L2224/32227 , H01L2224/32238 , H01L2224/4007 , H01L2224/40229 , H01L2224/73263 , H01L2924/13055
摘要： A semiconductor module includes a semiconductor chip arranged on a mounting board, and a wiring member electrically connected to the semiconductor chip. The wiring member includes a body portion elongated in the direction of a Y-axis, and one or more ridges protruding from a surface of a flat plate-shaped portion of the body portion and extending along the Y-axis.
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公开(公告)号：US12040361B2
公开(公告)日：2024-07-16
申请号：US17533855
申请日：2021-11-23
发明人： Keiji Okumura
CPC分类号： H01L29/1095 , H01L29/66734 , H01L29/7813 , H01L29/1608
摘要： A semiconductor device includes n-type drift layer, n-type first current spreading layer on top surface of the drift layer, p-type base region on top surface of the first current spreading layer, p-type gate-bottom protection region inside the first current spreading layer, p-type base-bottom embedded region separated from the gate-bottom protection region and in contact with bottom surface of the base region, n-type second current spreading layer having side surface opposed to the gate-bottom protection region and in contact with side surface of the base-bottom embedded region, and insulated gate electrode structure inside trench penetrating the base region to reach the gate-bottom protection region. The impurity concentration ratio of the gate-bottom protection region to the first current spreading layer is greater than the impurity concentration ratio of the base-bottom embedded region to the second current spreading layer.
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公开(公告)号：US20240235417A9
公开(公告)日：2024-07-11
申请号：US18453925
申请日：2023-08-22
发明人： Hironobu SHIROYAMA
CPC分类号： H02M7/219 , H02M1/4208
摘要： A control circuit for a circuit that has a rectifier circuit including first to fourth diodes, and first to fourth switches respectively connected in parallel with the first to fourth diodes, for rectifying an AC voltage; and a capacitor receiving the rectified AC voltage. The control circuit controls the first to fourth switches, and includes: a determination unit determining an off-period in which, when the AC voltage is applied, the first to fourth diodes turn off, the off-period including a first period and a second period, in which the first and fourth diodes, and the second and third diodes, respectively turn off; and a control unit turning on the first and fourth switches in the first period, when the second and third diodes are off, and turning on the second and third switches in the second period, when the first and fourth diodes are off.
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公开(公告)号：US20240234554A1
公开(公告)日：2024-07-11
申请号：US18515275
申请日：2023-11-21
发明人： Naoki MITAMURA
IPC分类号： H01L29/739 , H01L27/07 , H01L29/06 , H01L29/08 , H01L29/861
CPC分类号： H01L29/7397 , H01L27/0727 , H01L29/0696 , H01L29/0834 , H01L29/861
摘要： Provided is a semiconductor device including a transistor portion and a diode portion, where the semiconductor device including: a plurality of trench portions provided on a front surface of a semiconductor substrate; a drift region of a first conductivity type provided in the semiconductor substrate; an anode region of a second conductivity type provided above the drift region in the diode portion; a low concentration region provided above the anode region and having a doping concentration an absolute value of which is lower than that of the anode region; and a high concentration region of the second conductivity type provided above the anode region and having a doping concentration higher than that of the anode region.
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公开(公告)号：US20240234496A1
公开(公告)日：2024-07-11
申请号：US18399996
申请日：2023-12-29
发明人： Kensuke TAKENAKA , Shinsuke HARADA
CPC分类号： H01L29/0634 , H01L21/046 , H01L29/1608 , H01L29/66068 , H01L29/7813
摘要： A method of manufacturing a silicon carbide semiconductor device includes preparing a silicon carbide semiconductor substrate of a first conductivity type; forming a first semiconductor layer of a first conductivity type at a surface of the silicon carbide semiconductor substrate, the first semiconductor layer having a first surface and a second surface opposite to each other, the second surface facing the silicon carbide semiconductor substrate; implanting ions of an inert element into a region of a surface layer of the first semiconductor layer, thereby, inducing ion implantation damage to a crystal structure of the region in which a long tail occurs, the surface layer being at the first surface of the first semiconductor layer; and implanting a dopant of a second conductivity type into the surface layer of the first semiconductor layer where the crystal structure is damaged, thereby, forming column regions of the second conductivity type.
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