ADHESION PROMOTING PHOTORESIST UNDERLAYER COMPOSITION

    公开(公告)号:US20220197143A1

    公开(公告)日:2022-06-23

    申请号:US17127434

    申请日:2020-12-18

    Abstract: A photoresist underlayer composition comprising a poly(arylene ether); an additive of formula (14): D-(L1-Ar—[X]n)m  (14); and a solvent, wherein, in formula (14), D is a substituted or unsubstituted C1-60 organic group, optionally wherein D is an organic acid salt of the substituted or unsubstituted C1-60 organic group; each L1 is independently a single bond or a divalent linking group, when L1 is a single bond, D may be a substituted or unsubstituted C3-30 cycloalkyl or substituted or unsubstituted C1-20 heterocycloalkyl that is optionally fused with Ar, each Ar is independently a monocyclic or polycyclic C5-60 aromatic group, each X is independently —OR30, —SR31, or —NR32R33, m is an integer of 1 to 6, each n is independently an integer of 0 to 5, provided that a sum of all n is 2 or greater, and R30 to R33 are as provided herein.

    PHOTORESIST COMPOSITIONS AND PATTERN FORMATION METHODS

    公开(公告)号:US20220137509A1

    公开(公告)日:2022-05-05

    申请号:US17506082

    申请日:2021-10-20

    Abstract: Photoresist compositions comprise: an acid-sensitive polymer comprising a first repeating unit formed from a first free radical polymerizable monomer comprising an acid-decomposable group and a second repeating unit formed from a second free radical polymerizable monomer comprising a carboxylic acid group; a compound comprising two or more enol ether groups, wherein the compound is different from the acid-sensitive polymer; a material comprising a base-labile group; a photoacid generator; and a solvent. The photoresist compositions and pattern formation methods using the photoresist compositions find particular use in the formation of fine lithographic patterns in the semiconductor manufacturing industry.

    PHOTORESIST COMPOSITIONS AND PATTERN FORMATION METHODS

    公开(公告)号:US20220137506A1

    公开(公告)日:2022-05-05

    申请号:US17084993

    申请日:2020-10-30

    Abstract: A photoresist composition, comprising an acid-sensitive polymer comprising a repeating unit having an acid-labile group; an iodonium salt comprising an anion and a cation, the iodonium salt having Formula (1): wherein Z− is an organic anion; Ar1 is substituted or unsubstituted C4-60 heteroaryl group comprising a furan heterocycle; and R1 is substituted or unsubstituted hydrocarbon group as provided herein, wherein the cation optionally comprises an acid-labile group, wherein Ar1 and R1 are optionally connected to each other via a single bond or one or more divalent linking groups to form a ring, and wherein the iodonium salt is optionally covalently bonded through Ar1 or substituent thereof as a pendant group to a polymer, the iodonium salt is optionally covalently bonded through R1 or substituent thereof as a pendant group to a polymer, or the iodonium salt is optionally covalently bonded through Z− as a pendant group to a polymer; and a solvent.

    COATING COMPOSITIONS AND METHODS OF FORMING ELECTRONIC DEVICES

    公开(公告)号:US20210343522A1

    公开(公告)日:2021-11-04

    申请号:US17231339

    申请日:2021-04-15

    Abstract: Coating compositions comprise: a B-staged reaction product of one or more compounds comprising: a core chosen from C6-50 carbocyclic aromatic, C2-50 heterocyclic aromatic, C1-20 aliphatic, C1-20 heteroaliphatic, C3-20 cycloaliphatic, and C2-20 heterocycloaliphatic, each of which may be substituted or unsubstituted; and two or more substituents of formula (1) attached to the core: wherein: Ar1 is an aromatic group independently chosen from C6-50 carbocyclic aromatic and C2-50 heteroaromatic, each of which may be substituted or unsubstituted; Z is a substituent independently chosen from OR1, protected hydroxyl, carboxyl, protected carboxyl, SR1, protected thiol, —O—C(═O)—C1-6 alkyl, halogen, and NHR2; wherein each R1 is independently chosen from H, C1-10 alkyl, C2-10 unsaturated hydrocarbyl, and C5-30 aryl; each R2 is independently chosen from H, C1-10 alkyl, C2-10 unsaturated hydrocarbyl, C5-30 aryl, C(═O)—R1, and S(═O)2—R1; x is an integer from 1 to the total number of available aromatic ring atoms in Ar1; and * denotes the point of attachment to the core; provided that when the core comprises an aromatic ring, no substituents of formula (1) are in an ortho position to each other on the same aromatic ring of the core; and one or more solvents, wherein the total solvent content is from 50 to 99 wt % based on the coating composition. Coated substrates formed with the coating compositions and methods of forming electronic devices using the compositions are also provided. The compositions, coated substrates and methods find particular applicability in the manufacture of semiconductor devices.

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