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公开(公告)号:US20220197143A1
公开(公告)日:2022-06-23
申请号:US17127434
申请日:2020-12-18
Applicant: ROHM AND HAAS ELECTRONIC MATERIALS LLC
Inventor: Joshua Kaitz , Ke Yang , Keren Zhang , Li Cui , James F. Cameron , Dan B. Millward , Shintaro Yamada
IPC: G03F7/11 , C09D171/00 , C08G65/40
Abstract: A photoresist underlayer composition comprising a poly(arylene ether); an additive of formula (14): D-(L1-Ar—[X]n)m (14); and a solvent, wherein, in formula (14), D is a substituted or unsubstituted C1-60 organic group, optionally wherein D is an organic acid salt of the substituted or unsubstituted C1-60 organic group; each L1 is independently a single bond or a divalent linking group, when L1 is a single bond, D may be a substituted or unsubstituted C3-30 cycloalkyl or substituted or unsubstituted C1-20 heterocycloalkyl that is optionally fused with Ar, each Ar is independently a monocyclic or polycyclic C5-60 aromatic group, each X is independently —OR30, —SR31, or —NR32R33, m is an integer of 1 to 6, each n is independently an integer of 0 to 5, provided that a sum of all n is 2 or greater, and R30 to R33 are as provided herein.
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公开(公告)号:US20220197142A1
公开(公告)日:2022-06-23
申请号:US17124751
申请日:2020-12-17
Applicant: ROHM AND HAAS ELECTRONIC MATERIALS LLC
Inventor: Joshua Kaitz , Michael Finch , Paul J. LaBeaume , Shintaro Yamada , Suzanne M. Coley
IPC: G03F7/11 , C08G65/40 , C09D171/12 , C08G73/06 , C09D179/04 , C08F220/18 , C09D133/10 , C23C16/02 , C23C16/20 , C23C16/455 , G03F7/16 , G03F7/42 , H01L21/027
Abstract: A method of forming a pattern on a substrate, the method including: forming a photoresist underlayer over a surface of the substrate, wherein the photoresist underlayer is formed from a composition comprising a polymer and a solvent, and the photoresist underlayer has a carbon content of greater than 47 at %; subjecting the photoresist underlayer to a a metal precursor, where the metal precursor infiltrates a free volume of the photoresist underlayer; and exposing the metal precursor-treated photoresist underlayer to an oxidizing agent to provide a metallized photoresist underlayer.
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公开(公告)号:US20220137509A1
公开(公告)日:2022-05-05
申请号:US17506082
申请日:2021-10-20
Applicant: Rohm and Haas Electronic Materials LLC
Inventor: Xisen Hou , Mingqi Li , Joshua Kaitz , Tomas Marangoni , Peter Trefonas, III
Abstract: Photoresist compositions comprise: an acid-sensitive polymer comprising a first repeating unit formed from a first free radical polymerizable monomer comprising an acid-decomposable group and a second repeating unit formed from a second free radical polymerizable monomer comprising a carboxylic acid group; a compound comprising two or more enol ether groups, wherein the compound is different from the acid-sensitive polymer; a material comprising a base-labile group; a photoacid generator; and a solvent. The photoresist compositions and pattern formation methods using the photoresist compositions find particular use in the formation of fine lithographic patterns in the semiconductor manufacturing industry.
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公开(公告)号:US20220137506A1
公开(公告)日:2022-05-05
申请号:US17084993
申请日:2020-10-30
Applicant: ROHM AND HAAS ELECTRONIC MATERIALS LLC
Inventor: Tomas Marangoni , Emad Aqad , James W. Thackeray , James F. Cameron , Xisen Hou , ChoongBong Lee
IPC: G03F7/004
Abstract: A photoresist composition, comprising an acid-sensitive polymer comprising a repeating unit having an acid-labile group; an iodonium salt comprising an anion and a cation, the iodonium salt having Formula (1): wherein Z− is an organic anion; Ar1 is substituted or unsubstituted C4-60 heteroaryl group comprising a furan heterocycle; and R1 is substituted or unsubstituted hydrocarbon group as provided herein, wherein the cation optionally comprises an acid-labile group, wherein Ar1 and R1 are optionally connected to each other via a single bond or one or more divalent linking groups to form a ring, and wherein the iodonium salt is optionally covalently bonded through Ar1 or substituent thereof as a pendant group to a polymer, the iodonium salt is optionally covalently bonded through R1 or substituent thereof as a pendant group to a polymer, or the iodonium salt is optionally covalently bonded through Z− as a pendant group to a polymer; and a solvent.
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公开(公告)号:US20220112619A1
公开(公告)日:2022-04-14
申请号:US17556037
申请日:2021-12-20
Applicant: Rohm and Haas Electronic Materials LLC
Inventor: Miguel A. Rodriguez , Michael Lipschutz , Jamie Y.C. Chen , Youngmin Yoon
Abstract: Aqueous acid binary silver-bismuth alloy electroplating compositions and methods enable electroplating silver rich binary silver-bismuth deposits. The aqueous acid binary silver-bismuth alloy electroplating compositions include 5-membered heterocyclic nitrogen compounds with a thiol functionality which enable deposition of the silver rich binary silver-bismuth alloys. The silver rich silver-bismuth deposits are matte to semi-bright, uniform and have a low coefficient of friction.
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26.
公开(公告)号:US11269252B2
公开(公告)日:2022-03-08
申请号:US16517950
申请日:2019-07-22
Inventor: Jung-June Lee , Jae-Yun Ahn , Jae-Hwan Sim , Jae-Bong Lim , Emad Aqad , Myung-Yeol Kim
Abstract: An antireflective coating composition, including a polymer, a photoacid generator having a crosslinkable group, a compound capable of crosslinking the polymer and the photoacid generator, a thermal acid generator, and an organic solvent.
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公开(公告)号:US20210397093A1
公开(公告)日:2021-12-23
申请号:US17370541
申请日:2021-07-08
Applicant: Rohm and Haas Electronic Materials LLC
Inventor: Charlotte A. Cutler , Li Cui , Shintaro Yamada , Paul J. LaBeaume , Suzanne M. Coley , James F. Cameron , Daniel Greene
Abstract: Methods of manufacturing electronic devices employing wet-strippable underlayer compositions comprising a condensate and/or hydrolyzate of a polymer comprising as polymerized units one or more first unsaturated monomers having a condensable silicon-containing moiety, wherein the condensable silicon-containing moiety is pendent to the polymer backbone, and one or more condensable silicon monomers are provided.
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公开(公告)号:US20210343522A1
公开(公告)日:2021-11-04
申请号:US17231339
申请日:2021-04-15
Applicant: Rohm and Haas Electronic Materials LLC
Inventor: Sheng Liu , James F. CAMERON , Iou-Sheng KE , Shintaro YAMADA , Li CUI
IPC: H01L21/027 , C09D163/00 , G03F7/11 , G03F7/00 , G03F7/09 , G03F7/075
Abstract: Coating compositions comprise: a B-staged reaction product of one or more compounds comprising: a core chosen from C6-50 carbocyclic aromatic, C2-50 heterocyclic aromatic, C1-20 aliphatic, C1-20 heteroaliphatic, C3-20 cycloaliphatic, and C2-20 heterocycloaliphatic, each of which may be substituted or unsubstituted; and two or more substituents of formula (1) attached to the core: wherein: Ar1 is an aromatic group independently chosen from C6-50 carbocyclic aromatic and C2-50 heteroaromatic, each of which may be substituted or unsubstituted; Z is a substituent independently chosen from OR1, protected hydroxyl, carboxyl, protected carboxyl, SR1, protected thiol, —O—C(═O)—C1-6 alkyl, halogen, and NHR2; wherein each R1 is independently chosen from H, C1-10 alkyl, C2-10 unsaturated hydrocarbyl, and C5-30 aryl; each R2 is independently chosen from H, C1-10 alkyl, C2-10 unsaturated hydrocarbyl, C5-30 aryl, C(═O)—R1, and S(═O)2—R1; x is an integer from 1 to the total number of available aromatic ring atoms in Ar1; and * denotes the point of attachment to the core; provided that when the core comprises an aromatic ring, no substituents of formula (1) are in an ortho position to each other on the same aromatic ring of the core; and one or more solvents, wherein the total solvent content is from 50 to 99 wt % based on the coating composition. Coated substrates formed with the coating compositions and methods of forming electronic devices using the compositions are also provided. The compositions, coated substrates and methods find particular applicability in the manufacture of semiconductor devices.
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公开(公告)号:US20210310126A1
公开(公告)日:2021-10-07
申请号:US16840280
申请日:2020-04-03
Inventor: Husnu Alp Alidedeoglu , Patricia Gumbley , Cecilia Hall , Joseph Casey Johnson , Benjamin Naab , Jaclyn Murphy , Grzegorz Slawinski , Christopher Dennis Simone
Abstract: In a first aspect, a metal-clad polymer film includes a polymer film adhered to a first metal layer. The root-mean-square roughness (Sq) of the interface between the polymer film and the first metal layer is less than 1 μm. The peel strength between the polymer film and the first metal layer is greater than 5 N/cm after 168 hours of aging at 150° C. when tested for a polymer film having a thickness in the range of from 25 to 75 μm and a first metal layer having a thickness of 18 μm in accordance with IPC-TM-650 test methods. The thickness of the first metal layer is 12 μm or less. The polymer film includes a first thermoplastic polyimide layer. In a second aspect, an electronic device includes the metal-clad polymer film of the first aspect. In a third aspect a process includes for forming a double-sided metal-clad polymer film.
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公开(公告)号:US11121190B2
公开(公告)日:2021-09-14
申请号:US16086862
申请日:2017-03-23
Applicant: Dow Global Technologies LLC , Rohm and Haas Company , The Board of Trustees of the University of Illinois , Rohm and Haas Electronic Materials LLC
Inventor: Peter Trefonas, III , Kishori Deshpande , Trevor Ewers , Edward Greer , Jaebum Joo , Bong Hoon Kim , Nuri Oh , Jong Keun Park , Moonsub Shim , Jieqian Zhang
Abstract: Provided is an optoelectronic device comprising an optoelectronic element and circuitry connected to the optoelectronic element, wherein the optoelectronic element comprises plural quantum dots or plural nanorods, and wherein the circuitry is configured to be capable of switching the optoelectronic element between a configuration in which the circuitry provides an effective forward bias voltage that causes the optoelectronic element to emit light and a configuration in which the circuitry provides an effective reverse bias voltage that causes the optoelectronic element to be capable of generating a photocurrent when light to which the optoelectronic element is sensitive strikes the optoelectronic element.
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