HIGH PRESSURE APPARATUS AND METHOD FOR NITRIDE CRYSTAL GROWTH
    21.
    发明申请
    HIGH PRESSURE APPARATUS AND METHOD FOR NITRIDE CRYSTAL GROWTH 有权
    高压装置和氮化物晶体生长方法

    公开(公告)号:US20090301387A1

    公开(公告)日:2009-12-10

    申请号:US12133364

    申请日:2008-06-05

    Inventor: MARK P. D'EVELYN

    Abstract: A high pressure apparatus and related methods for processing supercritical fluids. In a specific embodiment, the present apparatus includes a capsule, a heater, at least one ceramic ring but can be multiple rings, optionally, with one or more scribe marks and/or cracks present. In a specific embodiment, the apparatus optionally has a metal sleeve containing each ceramic ring. The apparatus also has a high-strength enclosure, end flanges with associated insulation, and a power control system. IN a specific embodiment, the apparatus is capable of accessing pressures and temperatures of 0.2-2 GPa and 400-1200° C., respectively.

    Abstract translation: 一种用于加工超临界流体的高压装置及相关方法。 在具体实施例中,本装置包括胶囊,加热器,至少一个陶瓷环,但可以是多个环,任选地,存在一个或多个划痕和/或裂纹。 在具体实施例中,该装置可选地具有包含每个陶瓷环的金属套筒。 该设备还具有高强度外壳,具有相关绝缘的端部法兰和电源控制系统。 在具体实施例中,该装置能够分别访问0.2-2GPa和400-1200℃的压力和温度。

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