Calorimeter
    22.
    发明授权
    Calorimeter 有权
    热量计

    公开(公告)号:US06907359B2

    公开(公告)日:2005-06-14

    申请号:US10417906

    申请日:2003-04-17

    CPC分类号: G01K17/00 G01K7/006

    摘要: A superconducting radiation detector relies upon the abruptness of a superconducting transition edge to converts a slight heat generated by an X-ray into a high signal current and uses an electrothermal self-feedback mechanism to provide a high energy resolution and a high counting rate. A calorimeter incorporating such a radiation detector has an absorber for absorbing X-rays, a resistor formed of a superconductor provided under the absorber and having a resistance value that varies with heat generated in the absorber, superconducting wires for connecting the resistor to an external current detector, a membrane on which the resistor is provided, and an insulating film provided between the resistor and the absorber and having at least one hole penetrating therethrough, the resistor and the absorber being in contact through the hole.

    摘要翻译: 超导辐射探测器依赖于超导过渡边缘的突然性,将由X射线产生的轻微热量转换为高信号电流,并使用电热自反馈机制提供高能量分辨率和高计数率。 结合了这样的放射线检测器的量热器具有用于吸收X射线的吸收体,由吸收体下方设置的超导体形成的电阻器,其电阻值随着在吸收体中产生的热量而变化,用于将电阻器连接到外部电流的超导线 检测器,设置有电阻器的膜,以及设置在电阻器和吸收体之间并具有贯穿其中的至少一个孔的绝缘膜,电阻器和吸收体通过孔接触。

    Superconducting transition-edge sensor
    23.
    发明授权
    Superconducting transition-edge sensor 失效
    超导过渡边缘传感器

    公开(公告)号:US5880468A

    公开(公告)日:1999-03-09

    申请号:US702133

    申请日:1996-08-26

    摘要: This invention provides a method and apparatus for particle detection utilizing an Al/normal-metal bilayer transition-edge sensor (TES) coupled with a particle absorber. The TES is maintained in the transition region where its properties are extremely sensitive to temperature. In the detector, the energy of an absorbed particle is converted to heat by the absorber and the transition from the bilayer's superconducting to normal state is used to sense the temperature rise. The transition temperature, T.sub.c, of the bilayer can be reproducibly controlled as a function of the relative thicknesses and the total thickness of the superconducting and normal-metal layers. The range of available T.sub.c 's extends from below 50 mK to above 1 K, allowing the detector to be tailored to the application. For x-ray detection the preferred T.sub.c is about 50-150 mK. The width of the transition edge can be less than 0.1 mK, which allows very high detector sensitivity.

    摘要翻译: 本发明提供一种利用与粒子吸收器耦合的Al /正常金属双层过渡边缘传感器(TES)进行粒子检测的方法和装置。 TES保持在其特性对温度非常敏感的过渡区域。 在检测器中,吸收的颗粒的能量被吸收器转化为热量,并且使用从双层超导到正常状态的过渡来感测温度升高。 作为超导和正常金属层的相对厚度和总厚度的函数,双重层的转变温度Tc可以重复地控制。 可用Tc的范围从低于50 mK延伸到1 K以上,允许检测器适合应用。 对于x射线检测,优选的Tc为约50-150mK。 过渡边缘的宽度可以小于0.1 mK,这样可以实现非常高的检测灵敏度。

    Temperature-sensitive multiple-layer thin film superconducting device
    24.
    发明授权
    Temperature-sensitive multiple-layer thin film superconducting device 失效
    温敏多层薄膜超导器件

    公开(公告)号:US4869598A

    公开(公告)日:1989-09-26

    申请号:US166670

    申请日:1988-03-11

    IPC分类号: G01K7/00 G01K7/22 H01L39/10

    摘要: A superconducting device is disclosed with the device having multiple layers of thin film configured to achieve highly sensitive measurements based upon temperature. The device is implemented, in simplest form, as a stripline having a ground plane layer of superconductor, a configured layer of superconductor, and a dielectric layer between the ground plane layer and the configured layer. The device is operated at a temperature just below the transition temperature of the superconducting materials utilized so that the inductance of the device depends substantially upon temperatures encountered, with highest sensitivity resulting when at least one of the superconducting layers has a thickness that is small relative to the magnetic penetration depth of the superconducting material utilized.

    摘要翻译: 公开了一种超导装置,其中具有多层薄膜的装置被配置成基于温度实现高度灵敏的测量。 该装置以最简单的形式被实现为具有超导体的接地层的带状线,配置的超导体层,以及在接地平面层和构造层之间的介电层。 该装置在刚刚低于所使用的超导材料的转变温度的温度下操作,使得器件的电感基本上取决于所遇到的温度,具有最高的灵敏度,当至少一个超导层的厚度相对于 所用超导材料的磁穿透深度。

    SUPERCONDUCTING SCANNING SENSOR FOR NANOMETER SCALE TEMPERATURE IMAGING

    公开(公告)号:US20180045754A1

    公开(公告)日:2018-02-15

    申请号:US15557104

    申请日:2016-03-10

    IPC分类号: G01Q60/58

    摘要: A device and methods for use thereof in low-temperature thermal scanning microscopy, providing non-contact, non-invasive localized temperature and thermal conductivity measurements in nanometer scale ranges with a temperature resolution in the micro-Kelvin order. A superconductive cap mounted on the tip of an elongated support probe is electrically-connected to superconductive leads for carrying electrical current through the cap. The critical superconducting current of the leads is configured to be greater than the critical current supported by the cap, and the cap's critical current is configured to be a function of its temperature. Thus, the temperature of the cap is measured by measuring its critical superconducting current. In a related embodiment, driving a current greater than the critical current of the cap quenches the cap's superconductivity, and permits the cap to dissipate resistive heat into the sample being scanned. Scanning of the sample in this mode thus images its thermal conductivity patterns.

    Circuit And Method Using Distributed Phase Change Elements For Across-Chip Temperature Profiling
    28.
    发明申请
    Circuit And Method Using Distributed Phase Change Elements For Across-Chip Temperature Profiling 有权
    用于跨芯片温度分布的分布相变元件的电路和方法

    公开(公告)号:US20090282375A1

    公开(公告)日:2009-11-12

    申请号:US12117784

    申请日:2008-05-09

    IPC分类号: G06F17/50 G01K3/00

    CPC分类号: G01K3/14 G01K7/006 G01K7/425

    摘要: Disclosed is an across-chip temperature sensing circuit and an associated method that can be used to profile the across-chip temperature gradient. The embodiments incorporate a plurality of phase change elements distributed approximately evenly across the semiconductor chip. These phase change elements are programmed to have essentially the same amorphous resistance. Temperature-dependent behavior exhibited by each of the phase change elements individually is compared to a reference (e.g., generated by a discrete reference phase change element, generated by another one of the phase change elements, or generated by an external reference) in order to profile the temperature gradient across the semiconductor chip. Once profiled, this temperature gradient can be used to redesign and/or relocate functional cores, to set stress limits for qualification of functional cores and/or to adjust operating specifications of functional cores.

    摘要翻译: 公开了一种跨芯片温度感测电路及其相关方法,可用于对片内温度梯度进行分析。 这些实施例结合了大致均匀分布在半导体芯片上的多个相变元件。 这些相变元件被编程为具有基本上相同的无定形电阻。 每个相变元件单独表现出的温度相关行为与参考(例如,由离散参考相变元件产生,由另一个相变元件产生或由外部参考产生)相比较,以便 描述半导体芯片上的温度梯度。 一旦进行了分析,该温度梯度可用于重新设计和/或重新定位功能核心,为功能核心的鉴定和/或调整功能核心的操作规范设定应力限制。

    Mercury-containing copper oxide superconductor film, manufacturing apparatus thereof and manufacturing process thereof
    30.
    发明申请
    Mercury-containing copper oxide superconductor film, manufacturing apparatus thereof and manufacturing process thereof 审中-公开
    含汞氧化铜超导体膜及其制造装置及其制造方法

    公开(公告)号:US20030197155A1

    公开(公告)日:2003-10-23

    申请号:US10191894

    申请日:2002-07-09

    申请人: NEC Corporation

    发明人: Wataru Hattori

    IPC分类号: C23C016/00 H01C001/00

    摘要: The objective of this invention is to provide a mercury-containing copper oxide superconductor film with a large area and a reduced amount of hetero-phase precipitate as an impurity, as well as an apparatus and a process for safely producing the film in a large scale; for this purpose, an apparatus for forming a film of this invention comprises a pressure vessel 1 (pressurized atmosphere furnace) equipped with a port 11 for introducing an external gas atmosphere to the furnace wall 3 and a mercury feeder 10 for controlling a pressure of the gas atmosphere independently of the pressure vessel 1 by generating a mercury-containing gas, the mercury feeder 10 introduces a mercury-containing gas into the pressure vessel 1 via the port 11, and, there is a metal seal gate valve 16 between the pressure vessel 1 and the mercury feeder 10.

    摘要翻译: 本发明的目的是提供一种具有大面积和少量异相析出物作为杂质的含汞氧化铜超导体膜,以及用于大规模安全地生产薄膜的装置和方法 ; 为此,本发明的膜形成装置包括:装有用于将外部气体气体引入炉壁3的端口11的压力容器1(加压气氛炉)和用于控制炉壁3的压力的水银给料器10 通过产生含汞气体,压力容器1独立于气体气体,汞供给器10经由端口11将含汞气体引入压力容器1中,并且在压力容器之间存在金属密封闸阀16 1和汞供给器10。