摘要:
A superconducting radiation detector uses the abruptness of a superconducting transition edge, converts a slight heat generated by an X-ray into a high signal current, and uses an electrothermal self-feedback mechanism, thereby having a high energy resolution and a high counting rate. In a calorimeter that includes an absorber for absorbing X-rays, a resistor provided under the absorber, a resistance value thereof being changed by heat generated in the absorber, superconducting wires connecting the resistor and an external current detector, and a membrane on which the resistor is superimposed, the resistor being constituted by a superconductor, the calorimeter allowing Joule heat generated by steadily flowing a current in the resistor and the heat generated in the absorber to be thermally balanced and transfer in the membrane, an insulating film is provided between the resistor and the absorber, the film having a hole penetrating the film in the thickness direction.
摘要:
The invention relates to a novel thermoelectric sensor for determining or measuring the thermal power of radiation, especially laser radiation, with at least one thermoelectric detector or sensor element which has an active detector surface of a thin active layer of a crystalline solid with anisotropic thermoelectric power and in which the surface perpendicular of the layer does not coincide with one of the primary anisotropy directions, on the thin active layer there being at least two contacts for tapping a voltage dependent on the thermal output.
摘要:
A thermometer capable of providing temperature measurement over a wide temperature range comprises at least one temperature detection unit consisting of a first superconductor as a core, and a normal conductor and a second supercondutor sequentially superposed coaxially on the first superconductor; a first power source disposed to pass electric current between the first and second superconductors, a second power source disposed between the opposite terminals of the first superconductor, and a voltmeter connected to the first and second superconductors. This thermometer effects measurement of temperature by fixing the value of the electric current from the first power source and changing the value of the electric current from the second power source thereby causing cyclic change of the voltage and measuring the increment of electric current from the second power which is required to cause one cycle of change of the voltage.
摘要:
Techniques regarding determining the temperature of one or more quantum computing devices are provided. For example, one or more embodiments described herein can comprise a system, which can comprise a temperature component that can determine a temperature of a superconducting resonator based on a frequency shift exhibited by the superconducting resonator due to a change in kinetic inductance with a change in temperature.
摘要:
Various embodiments of the invention use the characteristics of BJTs to compute parameter values required to de-embed the effects of non-idealities including BJT's-mismatch in the reverse saturation current and process-dependent injection factor. In some embodiments, a temperature sensor circuit and method provide high temperature accuracy in a low-cost way by individually calibrating each part, thereby, eliminating the need to accurately measure temperature with a precision temperature sensor.
摘要:
The invention comprises a method for determining the hole or electron concentration, transition temperature, ratio T.sub.c /T.sub.c (max), or state of doping of a material capable of exhibiting superconductivity when cooled below its critical temperature, by measuring the thermopower of a sample of the material above the critical temperature of the material and determining from the thermopower the hole or electron concentration, transition temperature, ratio T.sub.c /T.sub.c (max), or state of doping of the material as to whether it is underdoped, overdoped or optimally doped. The sample may be differentially heated and/or cooled to generate a temperature difference across the sample, the temperature difference across the sample measured, the voltage across the sample measured, and the hole concentration or similar determined from the measured temperature difference and the measured voltage. Means for determining the hole concentration, transition temperature, or doping of the material is also claimed.
摘要:
A remote temperature sensor includes a microwave oscillator which generatesn output signal having a frequency which is proportional to the temperature of the environment in which it is located. The oscillator includes a relatively high transition temperature superconducting (HTSC) ring coupled to a transistor in a plurality of microstrip line oscillator configurations including those of a reaction oscillator, a transmission oscillator, a reflection oscillator and a parallel feedback oscillator. The superconducting ring operates below its transition temperature and in so doing, acts as a high Q resonator whose resonant frequency is proportional to temperature.
摘要:
A temperature sensor comprises a thin layer of material the composition of which varies gradually over the layer thickness. The material is superconductive below a critical temperature the value of which depends on the composition of the material. The layer is connected, by means of electrodes to an electronic circuit for supplying current to the sensor and processing a temperature-dependent signal produced by the sensor.
摘要:
Disclosed is an across-chip temperature sensing circuit and an associated method that can be used to profile the across-chip temperature gradient. The embodiments incorporate a plurality of phase change elements distributed approximately evenly across the semiconductor chip. These phase change elements are programmed to have essentially the same amorphous resistance. Temperature-dependent behavior exhibited by each of the phase change elements individually is compared to a reference (e.g., generated by a discrete reference phase change element, generated by another one of the phase change elements, or generated by an external reference) in order to profile the temperature gradient across the semiconductor chip. Once profiled, this temperature gradient can be used to redesign and/or relocate functional cores, to set stress limits for qualification of functional cores and/or to adjust operating specifications of functional cores.