公开(公告)号：US5337340A

公开(公告)日：1994-08-09

申请号：US19995

申请日：1993-02-17

申请人： Jaroslav Hynecek

发明人： Jaroslav Hynecek

IPC分类号： H01L27/148 ,  H01L29/768 ,  G11C19/28 ,  H01L29/796

CPC分类号： H01L29/76816 ,  H01L27/14831 ,  H01L29/76858

摘要： Generally, and in one form of the invention, a method for multiplying charge in a CCD cell is disclosed comprising the step of causing impact ionization of charge carriers in the CCD cell.Other devices, systems and methods are also disclosed.

摘要翻译： 通常，在本发明的一种形式中，公开了一种用于在CCD单元中乘以电荷的方法，其包括在CCD单元中引起电荷载流子的冲击电离的步骤。 还公开了其他装置，系统和方法。

公开(公告)号：US5315137A

公开(公告)日：1994-05-24

申请号：US790782

申请日：1991-11-12

申请人： Masaji Asaumi ,  Takao Kuroda

发明人： Masaji Asaumi ,  Takao Kuroda

IPC分类号： H01L21/339 ,  H01L29/423 ,  H01L29/768 ,  H01L29/796

CPC分类号： H01L29/66954 ,  H01L29/42396 ,  H01L29/76833 ,  H01L29/76858

摘要： The present invention relates to a charge transfer device having high transfer efficiency without leaving over signal charges, a charge transfer device substantially shortened in the gate length so as to enhance the transfer speed, and a method of manufacturing and a method of driving such device. In the charge transfer device of the invention, the n.sup.- diffusion layer is formed on the semiconductor substrate. In the surface region of the n.sup.- diffusion layer, a plurality of n diffusion layers are formed at equal intervals. The interval of the adjacent n diffusion layers is about 5 to 10 .mu.m. On the n.sup.- diffusion layer, an insulation film is formed. On the insulation film, transfer electrodes having two different shapes are formed. The transfer electrodes of these two types are alternately arranged. These transfer electrodes differ in length. The length of the longer transfer electrodes is about twice the length of the shorter transfer electrodes. Furthermore, the right end of the n diffusion layer nearly coincides with the right end of the longer transfer electrodes formed on the gate oxide film in the spatial position.

摘要翻译： 本发明涉及一种电荷转移装置，其具有高的转印效率而不会离开信号电荷，电荷转移装置基本上缩短了栅极长度，从而提高了传送速度，以及一种制造方法和驱动该装置的方法。 在本发明的电荷转移装置中，在半导体衬底上形成n-扩散层。 在n扩散层的表面区域中，以等间隔形成多个n个扩散层。 相邻n个扩散层的间隔约为5〜10μm。 在n-扩散层上形成绝缘膜。 在绝缘膜上形成具有两种不同形状的转印电极。 这两种类型的转移电极交替排列。 这些转移电极的长度不同。 较长的传输电极的长度约为短传输电极长度的两倍。 此外，n扩散层的右端几乎与在空间位置上形成在栅极氧化膜上的较长传输电极的右端重合。

公开(公告)号：US4901125A

公开(公告)日：1990-02-13

申请号：US231645

申请日：1988-08-10

申请人： Tetsuo Yamada

发明人： Tetsuo Yamada

IPC分类号： H01L27/148 ,  H01L29/10 ,  H01L29/768

CPC分类号： H01L29/76858 ,  H01L27/14831 ,  H01L29/1062 ,  H01L29/76841

摘要： A charge coupled device includes a main transfer channel having an n-type region formed in the surface area of a p-type silicon substrate and a plurality of electrodes formed over and insulated from the transfer channel and arranged in the direction in which the transfer channel extends. The charge coupled device further includes an n.sup.+-type sub-transfer channel formed in the n-type region with an impurity concentration higher than that of the n-type region.

摘要翻译： 电荷耦合器件包括：主传输沟道，其具有形成在p型硅衬底的表面区域中的n型区域，以及形成在传输沟道上并与传输沟道绝缘的多个电极，沿着传输通道 延伸。 电荷耦合器件还包括形成在n型区域中的杂质浓度高于n型区域的n +型子传输沟道。

公开(公告)号：US4694476A

公开(公告)日：1987-09-15

申请号：US910343

申请日：1986-09-19

申请人： Eiji Oda

发明人： Eiji Oda

IPC分类号： G11C19/28 ,  H01L21/339 ,  H01L27/14 ,  H01L27/148 ,  H01L29/76 ,  H01L29/762 ,  H01L29/768 ,  H01L29/772 ,  H04N5/335 ,  H04N5/341 ,  H04N5/359 ,  H04N5/372 ,  H01L29/78 ,  H01L31/00

CPC分类号： G11C19/282 ,  H01L29/76858

摘要： A buried channel CCD is described wherein buried CCD elements are formed on a semiconductor substrate of P-type material and formed in a semiconductor area of N-type material. Transfer electrodes are provided to which a driving pulse is applied. The driving pulse is a three-level pulse having, at different time points, first, second and third levels, during at least one part of a time period in a charge transfer period and a charge integration period, the first or second level of the three-level pulse is applied to selected transfer electrodes so that part of signal charges in the buried channel are drained through the semiconductor area into the semiconductor substrate; and in the charge transfer period, the second and third levels are alternately applied to the transfer electrodes.

摘要翻译： 描述了掩埋通道CCD，其中掩埋的CCD元件形成在P型材料的半导体衬底上并形成在N型材料的半导体区域中。 提供施加驱动脉冲的转移电极。 驱动脉冲是三电平脉冲，在电荷转移期间和电荷积分期间的时间段的至少一部分期间，在不同的时间点具有第一，第二和第三电平，第一或第二电平 将三电平脉冲施加到所选择的转移电极，使得埋入通道中的部分信号电荷通过半导体区域排入半导体衬底; 并且在电荷转移时段中，第二和第三电平交替地施加到转移电极。

公开(公告)号：US4468684A

公开(公告)日：1984-08-28

申请号：US365709

申请日：1982-04-05

申请人： Leonard J. M. Esser ,  Ludovicus G. M. Heldens

发明人： Leonard J. M. Esser ,  Ludovicus G. M. Heldens

IPC分类号： G11C27/04 ,  H01L21/339 ,  H01L27/105 ,  H01L27/148 ,  H01L29/762 ,  H01L29/768 ,  H01L29/78 ,  G11C19/28 ,  H01L27/14 ,  H01L31/00

CPC分类号： H01L29/76858 ,  H01L27/1057 ,  H01L27/14831 ,  H01L29/76841 ,  Y10S257/912

摘要： A CCD includes several juxtaposed channels for hole transport and electron transport. Each channel forms a lateral boundary for an adjacent complementary channel so that high density in combination with a simple structure can be obtained. The CCD channels may include a matrix of photosensitive elements of a solid state image sensor for a camera. The invention may also be used in memory matrices and other CCD devices.

摘要翻译： CCD包括用于空穴传输和电子传输的几个并置通道。 每个通道形成相邻互补通道的横向边界，使得可以获得与简单结构相结合的高密度。 CCD通道可以包括用于相机的固态图像传感器的感光元件的矩阵。 本发明也可用于存储器矩阵和其它CCD器件。

公开(公告)号：US4258376A

公开(公告)日：1981-03-24

申请号：US965112

申请日：1978-11-30

申请人： John M. Shannon

发明人： John M. Shannon

IPC分类号： H04N5/33 ,  G11C11/401 ,  G11C27/04 ,  H01L21/339 ,  H01L27/148 ,  H01L29/762 ,  H01L29/768 ,  H04N5/335 ,  H01L29/78 ,  H01L27/14 ,  H01L31/00

CPC分类号： H01L29/76858 ,  H01L27/14875

摘要： A charge coupled circuit arrangement uses a punch-through charge introduction effect to convert electromagnetic radiation into electrical signals. The invention is particularly, but not exclusively, adapted to convert electromagnetic radiation in the infra-red wavelength band into electrical signals. A charge coupled device using the punch-through charge introduction effect is also disclosed.

摘要翻译： 电荷耦合电路装置使用穿通电荷引入效应将电磁辐射转换为电信号。 本发明特别但不排他地适用于将红外波长带中的电磁辐射转换成电信号。 还公开了使用穿通电荷引入效应的电荷耦合器件。

公开(公告)号：US4040076A

公开(公告)日：1977-08-02

申请号：US709410

申请日：1976-07-28

申请人： Walter Frank Kosonocky ,  Elliott Samuel Kohn

发明人： Walter Frank Kosonocky ,  Elliott Samuel Kohn

IPC分类号： H01L27/148 ,  H01L29/768 ,  H01L29/78 ,  H01J39/12 ,  H01L27/14 ,  H01L31/00

CPC分类号： H01L29/76891 ,  H01L27/14875 ,  H01L29/76858

摘要： The portion which exceeds a given level, of a charge signal present at a radiation sensor, is passed to a storage site via the conduction path beneath a gate electrode. The remainder of the charge signal is removed to a drain through the same conduction path, the radiation sensor being reset to a reference level in the process. The use of a common conduction path for setting both the charge signal "skimming" level and the reset level, improves the uniformity of the skimming process from one sensor to another.