公开(公告)号：US4080172A

公开(公告)日：1978-03-21

申请号：US645186

申请日：1975-12-29

Applicant: Louis H. Fricke, Jr. ,  Thomas E. Reichard

Inventor： Louis H. Fricke, Jr. ,  Thomas E. Reichard

IPC: C30B13/28 ,  C30B13/30 ,  H01L21/208 ,  B01J17/10

CPC classification number: C30B13/30 ,  Y10T117/1008

Abstract: Disclosed is a method and apparatus for the automated growing of a floating zone refined, monocrystalline semiconductor rod. Two images of the molten/solid interface are separately positioned on two sensor arrays which, in addition to providing positioning feedback information, measure the diameter, the length of the molten zone and the "bag" or overhang angle of the molten semiconductor matter. The output of the sensor arrays are processed into signals which operate the zone refiner controls. There is thus provided an automated process for zone refining and monocrystalline rod growth of a semiconductor crystal from a seed crystal beginning with the tapering-out process, through the straight rod growth with a closely controlled diameter portion, to the end of the tapering-in process.

Abstract translation: 公开了一种用于自动生长浮式精制单晶半导体棒的方法和装置。 熔融/固体界面的两个图像被分开地定位在两个传感器阵列上，除了提供定位反馈信息之外，测量熔融区域的直径，熔融区域的长度和熔融半导体物质的“袋”或悬垂角度。 传感器阵列的输出被处理成操作区域精炼机控制的信号。 因此，提供了一种自动化方法，用于从锥形开始过程开始的晶种的半导体晶体的区域精炼和单晶棒生长，通过具有紧密控制的直径部分的直杆生长到锥形末端 处理。

公开(公告)号：US4046617A

公开(公告)日：1977-09-06

申请号：US610801

申请日：1975-09-05

Applicant: James C. Administrator of the National Aeronautics and Space Administration, with respect to an invention of Fletcher ,  Hans U. Walter ,  Robert S. Snyder

Inventor： James C. Administrator of the National Aeronautics and Space Administration, with respect to an invention of Fletcher ,  Hans U. Walter ,  Robert S. Snyder

IPC: C30B11/00 ,  C30B30/08 ,  B01J17/06 ,  B01J17/10

CPC classification number: C30B11/00 ,  C30B30/08 ,  Y10S117/901

Abstract: The method of refining, or growing, bulk single crystals in which the base material is suspended, positioned, and shaped as a containerless melt by wetting forces in an environment substantially free of gravity.

公开(公告)号：US3996011A

公开(公告)日：1976-12-07

申请号：US638302

申请日：1975-12-08

Applicant: Wolfgang Keller

Inventor： Wolfgang Keller

IPC: C30B13/28 ,  B01J17/10

CPC classification number: C30B13/285 ,  Y10S117/90 ,  Y10S117/911 ,  Y10T117/1084

Abstract: Polycrystalline semiconductor rods are converted to dislocation-free monocrystal rods by positioning a polycrystalline rod within a crucible-free zone melt environment with a seed crystal attached to one end thereof, generating a melt zone at the juncture of the seed crystal and the polycrystalline rod, controllably moving the melt zone away from the juncture and through the polycrystalline rod to a select point thereon, uniformly supporting the cone-shaped lower portion of the rod being processed so as to prevent oscillations and the like at the juncture of the rod in the seed crystal and controllably moving the melt zone from the select point to the remainder of the rod. A uniform support is preferably provided by an axially movable funnel-shaped casing which is attached to the seed crystal holding member and which, when moved into its operating position, is filled with a self-adjusting oscillation or vibration dampening means, such as molten metal, metal spheroids, quartz particles, sand, etc.

Abstract translation: 将多晶半导体棒通过将多晶棒定位在无坩埚区熔融环境中而将其转化为无位错的单晶棒，其中晶种与其一端相连，在晶种和多晶棒的接合处产生熔融区， 将熔体区域可控地移动离开接合点并通过多晶棒到其上的选择点，均匀地支撑被处理的杆的锥形下部，以防止在种子的杆的接合处的振荡等 晶体并且可控地将熔体区域从选择点移动到杆的剩余部分。 优选地，均匀的支撑件由可轴向移动的漏斗形壳体提供，所述壳体附接到晶种保持构件，并且当移动到其操作位置时，填充有自调节振动或减振装置，例如熔融金属 ，金属球体，石英颗粒，沙子等

公开(公告)号：US3989468A

公开(公告)日：1976-11-02

申请号：US637986

申请日：1975-12-05

Applicant: Wolfgang Keller

Inventor： Wolfgang Keller

IPC: C30B13/28 ,  B01J17/10 ,  C01B33/02

CPC classification number: C30B13/285 ,  Y10S117/90 ,  Y10S117/911 ,  Y10T117/1084 ,  Y10T403/478

Abstract: Polycrystalline semiconductor rods are converted to dislocation-free monocrystal rods by positioning a polycrystalline rod within a crucible-free zone melt environment with a seed crystal attached to one end thereof, generating a melt zone at the juncture of the seed crystal and the polycrystalline rod, controllably moving the melt zone away from the juncture and through the polycrystalline rod to a select point thereon, uniformly supporting the cone-shaped lower portion of the rod being processed so as to prevent oscillations and the like at the juncture of the rod in the seed crystal and controllably moving the melt zone from the select point to the remainder of the rod. A uniform support is preferably provided by an axially movable funnel-shaped casing which is attached to the seed crystal holding member and which, when moved into its operating position, is filled with a self-adjusting oscillation or vibiration dampening means, such as molten metal, metal spheroids, quartz particles, sand, etc.

Abstract translation: 将多晶半导体棒通过将多晶棒定位在无坩埚区熔融环境中而将其转化为无位错的单晶棒，其中晶种与其一端相连，在晶种和多晶棒的接合处产生熔融区， 将熔体区域可控地移动离开接合点并通过多晶棒到其上的选择点，均匀地支撑被处理的杆的锥形下部，以防止在种子的杆的接合处的振荡等 晶体并且可控地将熔体区域从选择点移动到杆的剩余部分。 均匀的支撑件优选地由可轴向移动的漏斗形壳体提供，所述壳体附接到晶种保持构件，并且当移动到其操作位置时，填充有自调节振动或吸气阻尼装置，例如熔融金属 ，金属球体，石英颗粒，沙子等

公开(公告)号：US3972684A

公开(公告)日：1976-08-03

申请号：US402278

申请日：1973-10-01

Applicant: Georges Jean-Pierre Hubert Defosse

Inventor： Georges Jean-Pierre Hubert Defosse

IPC: C30B13/30 ,  C30B13/28 ,  C30B13/32 ,  B01J17/10

CPC classification number: C30B13/28 ,  C30B13/285 ,  C30B13/32 ,  Y10S117/91 ,  Y10S117/911 ,  Y10T117/1072

Abstract: Process and apparatus for fabricating monocrystals from a monocrystaline germ maintained in a lower support by moving a melted portion of a bar of raw material similar to that of the germ, the raw material bar being maintained vertically in an upper support. A heating coil melts the top portion of the germ and the lower end of the raw material bar. The liquid phases obtained by the melting of the germ in the raw material bar to constitute a single molten zone are put into contact. Then the molten zone is stretched so as to obtain a substantially thin thread which becomes solid while crystallizing. The germ-bar unit is gradually moved into the coil radiating field so that a molten zone is held within the inductor field and that a monocrystal is grown from the germ through the thin thread and for producing an initial cone until the base of the cone reaches a predetermined diameter in that the growth is carried on until a cylinder having the diameter of the cone base is obtained. The lower support includes a suspension which is stiffened by means of an auxiliary support, the later being brought into contact with the lower portion of the growing monocrystal, while the germ-bar unit is gradually moved and the lower portion of the monocrystal is secured by pressure to the auxiliary support.

Abstract translation: 通过将原料棒的熔融部分移动到类似于胚芽的原料棒的熔化部分，将原料棒垂直地保持在上支撑体中，从保持在较低支撑体中的单晶胚制造单晶的方法和装置。 加热线圈熔化胚芽的顶部和原料棒的下端。 通过将原料棒中的胚芽熔化而构成单个熔融区而获得的液相被接触。 然后将熔融区域拉伸，以获得在结晶时变得固体的基本上细的线。 胚芽单元逐渐移动到线圈辐射场中，使得熔融区保持在电感器场内，并且单晶通过细丝从胚芽生长并用于产生初始锥直到锥体的底部到达 其中生长被保持直到获得具有锥形底部直径的圆柱体的预定直径。 下支撑件包括借助于辅助支撑件而加固的悬架，随后逐渐与生长的单晶的下部接触，同时逐渐移动，并且单晶的下部通过 对辅助支架的压力。

公开(公告)号：US3961906A

公开(公告)日：1976-06-08

申请号：US580548

申请日：1975-05-27

Applicant: Wolfgang Keller

Inventor： Wolfgang Keller

IPC: C30B13/28 ,  B01J17/10

CPC classification number: C30B13/285 ,  Y10S117/90 ,  Y10S117/911 ,  Y10T117/1084

Abstract: Polycrystalline semiconductor rods are converted to dislocation-free monocrystal rods by positioning a polycrystalline rod within a crucible-free zone melt environment with a seed crystal attached to one end thereof, generating a melt zone at the juncture of the seed crystal and the polycrystalline rod, controllably moving the melt zone away from the juncture and through the polycrystalline rod to a select point thereon, uniformly supporting the cone-shaped lower portion of the rod being processed so as to prevent oscillations and the like at the juncture of the rod in the seed crystal and controllably moving the melt zone from the select point to the remainder of the rod. A uniform support is preferably provided by an axially movable funnel-shaped casing which is attached to the seed crystal holding member and which, when moved into its operating position, is filled with a self-adjusting oscillation or vibration dampening means, such as molten metal, metal spheroids, quartz particles, sand, etc.

Abstract translation: 将多晶半导体棒通过将多晶棒定位在无坩埚区熔融环境中而将其转化为无位错的单晶棒，其中晶种与其一端相连，在晶种和多晶棒的接合处产生熔融区， 将熔体区域可控地移动离开接合点并通过多晶棒到其上的选择点，均匀地支撑被处理的杆的锥形下部，以防止在种子的杆的接合处的振荡等 晶体并且可控地将熔体区域从选择点移动到杆的其余部分。 优选地，均匀的支撑件由可轴向移动的漏斗形壳体提供，所述壳体附接到晶种保持构件，并且当移动到其操作位置时，填充有自调节振动或减振装置，例如熔融金属 ，金属球体，石英颗粒，沙子等

公开(公告)号：US3644151A

公开(公告)日：1972-02-22

申请号：US3644151D

申请日：1970-03-13

Applicant: SLEMENS AG

Inventor： KELLER WOLFGANG

IPC: C30B13/20 ,  H05B6/06 ,  H05B6/36 ,  B01J17/10

CPC classification number: H05B6/06 ,  C30B13/20 ,  Y10T117/1088

Abstract: Method of crucible-free zone melting a crystalline rod, such as a semiconductor rod especially, wherein the rod is surrounded by an induction heating coil energizable so as to form a molten zone in the rod, includes passing the molten zone axially through the rod, and simultaneously maintaining the crystalline rod and the induction heating coil at the same electric potential during passage of the molten zone through the rod; and device for carrying out the method.

公开(公告)号：US3630684A

公开(公告)日：1971-12-28

申请号：US3630684D

申请日：1967-09-22

Applicant: SIEMENS AG

Inventor： KELLER WOLFGANG

IPC: C30B13/32 ,  H01L21/208 ,  B01J17/10

CPC classification number: C30B13/32 ,  Y10T117/1088

Abstract: Device for crucible-free zone melting a crystalline rod includes a zone-melting chamber having a sidewall formed with a substantially vertical slot, heating means extending through said slot into said chamber and energizable for forming a melting zone in a substantially vertically supported crystalline rod mounted in said chamber, slide means located adjacent said sidewall and carrying said heating means, said slide means and said heating means being slidable together relative to the rod in the direction of the rod axis whereby the melting zone is passed through the rod, and an elastically deformable sealing strip mounted between said slide means and said sidewall of said zone melting chamber and completely surrounding said slot whereby said slot is gastightly sealed, said sealing strip being secured against displacement.

公开(公告)号：US3607109A

公开(公告)日：1971-09-21

申请号：US3607109D

申请日：1968-01-09

Applicant: CAPITA EMIL R

Inventor： CAPITA EMIL R

IPC: C30B15/02 ,  C30B15/08 ,  B01J17/10

CPC classification number: C30B15/02 ,  C30B15/08 ,  Y10S148/041 ,  Y10S148/107 ,  Y10T117/1056 ,  Y10T117/1068 ,  Y10T117/1088

Abstract: A method and means for producing a large diameter monocrystalline or single-crystal rod of semiconducting material from a polycrystalline bar comprising the supporting of the bar at an angle with the vertical and the heating of the lower end to a molten state by means of a high-frequency induction coil disposed thereabout. The rod may be formed by passing a monocrystalline seed through a space in the induction coil to contact the molten end of the bar forming a fused junction and retracting the seed downwardly while rotating it to draw the molten bar material between the coils out of the heated area to form a recrystallized rod. An additional heating coil may be positioned beneath the angularly disposed bar and heating coil to provide a slow and controlled heat recession during the solidification of the rod and the rod may be gas-doped by introducing the gas into the area of the molten zone.

公开(公告)号：US3531260A

公开(公告)日：1970-09-29

申请号：US3531260D

申请日：1967-07-28

Applicant: WESTERN ELECTRIC CO

Inventor： DIEHL WALTER H ,  LAGARDE ADOLPH K JR

IPC: C30B13/32 ,  B01J17/10 ,  G08B21/00 ,  H01H36/00

CPC classification number: C30B13/32 ,  Y10S117/911 ,  Y10T117/1004 ,  Y10T117/1076