Abstract:
A method and means for producing a large diameter monocrystalline or single-crystal rod of semiconducting material from a polycrystalline bar comprising the supporting of the bar at an angle with the vertical and the heating of the lower end to a molten state by means of a high-frequency induction coil disposed thereabout. The rod may be formed by passing a monocrystalline seed through a space in the induction coil to contact the molten end of the bar forming a fused junction and retracting the seed downwardly while rotating it to draw the molten bar material between the coils out of the heated area to form a recrystallized rod. An additional heating coil may be positioned beneath the angularly disposed bar and heating coil to provide a slow and controlled heat recession during the solidification of the rod and the rod may be gas-doped by introducing the gas into the area of the molten zone.