公开(公告)号：US20020166500A1

公开(公告)日：2002-11-14

申请号：US10085500

申请日：2002-02-26

发明人： Nobukazu Yogo ,  Tetsuo Kuwabara

IPC分类号： C30B013/00 ,  C30B021/04 ,  C30B028/08

CPC分类号： C30B11/006 ,  C30B11/00 ,  C30B29/12

摘要： Disclosed is a method of producing fluoride crystal, wherein the method includes a dehydrating step for dehydrating a raw material of fluoride by heating a crucible being adapted to accommodate a raw material of fluoride therein and having an exhaust mechanism for exhausting an inside gas of the crucible, and a exhausting step for exhausting, in the dehydrating step, an inside gas of the crucible by use of the exhaust mechanism.

摘要翻译： 公开了一种生产氟化物晶体的方法，其中该方法包括一个脱水步骤，用于通过加热坩埚原料来加热氟化物原料，使坩埚中的原料容纳氟化物，并具有用于排出坩埚内部气体的排气机构 以及在脱水工序中利用排气机构排出坩埚的内部气体的排气工序。

公开(公告)号：US20020108558A1

公开(公告)日：2002-08-15

申请号：US09972409

申请日：2001-10-05

发明人： John Peter Hill ,  Jay Curtis Nelson ,  William John Juhasz JR. ,  Henry Dare Wood

IPC分类号： C30B015/00 ,  C30B013/00 ,  C30B028/08 ,  C30B027/02 ,  C30B030/04 ,  C30B028/10 ,  C30B021/06 ,  C30B021/04

CPC分类号： C30B15/02 ,  Y10T117/1068 ,  Y10T117/1072

摘要： A system is disclosed for efficient utilization of charge replenishment rods in Czochralski silicon crystal growing processes.

摘要翻译： 公开了一种用于在Czochralski硅晶体生长过程中有效利用电荷补充棒的系统。

公开(公告)号：US20040211359A1

公开(公告)日：2004-10-28

申请号：US10487286

申请日：2004-02-20

发明人： Yutaka Shiraishi ,  Jyunsuke Tomioka ,  Takuji Okumura ,  Tadayuki Hanamoto ,  Takehiro Komatsu ,  Shigeo Morimoto

IPC分类号： C30B015/00 ,  C30B021/06 ,  C30B027/02 ,  C30B028/10 ,  C30B030/04 ,  C30B013/00 ,  C30B021/04 ,  C30B028/08

CPC分类号： C30B29/06 ,  C30B15/14 ,  C30B15/20 ,  Y10T117/1032 ,  Y10T117/1052 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/1088

摘要： A single crystal semiconductor manufacturing apparatus in which the concentration of oxygen in a single crystal semiconductor is controlled while pulling up a single crystal semiconductor such as single crystal silicon by the CZ method, a single crystal semiconductor manufacturing method, and a single crystal ingot manufactured by the method are disclosed. The natural convection (20) in the melt (5) in a quartz crucible (3) is controlled by regulating the temperatures at a plurality of parts of the melt (5). A single crystal semiconductor (6) can have a desired diameter by regulating the amount of heat produced by heating means (9a) on the upper side. Further the ratio between the amount of heat produced by the upper-side heating means (9a) and that by the lower-side heating means (9b) is adjusted to vary the process condition. In the adjustment, the amount of heat produced by the lower-side heating means (9b) is controlled to a relatively large proportion. Without inviting high cost and large size of the manufacturing apparatus, the oxygen concentration distribution in the axial direction of the single crystal semiconductor, the diameter of the single crystal semiconductor, and the minute fluctuation of the oxygen concentration in the axial direction are controlled.

摘要翻译： 单晶半导体制造装置，其中通过CZ法提取单晶硅中的单晶硅，单晶半导体制造方法和单晶硅制造单晶硅，单晶硅半导体中的氧浓度被控制， 公开了该方法。 通过调节熔体（5）的多个部分的温度来控制石英坩埚（3）中的熔体（5）中的自然对流（20）。 通过调节由上侧的加热装置（9a）产生的热量，单晶半导体（6）可以具有期望的直径。 此外，调节由上侧加热装置（9a）产生的热量与通过下侧加热装置（9b）产生的热量之间的比率以改变处理条件。 在调整中，将下侧加热装置（9b）产生的热量控制在相当大的比例。 不需要高成本和大尺寸的制造装置，可以控制单晶半导体的轴向氧浓度分布，单晶半导体的直径以及轴向氧浓度的微小波动。

公开(公告)号：US20040016392A1

公开(公告)日：2004-01-29

申请号：US10433257

申请日：2003-05-29

发明人： Hans-Dieter Block ,  Udo Krauter ,  Peter Schreckenberg

IPC分类号： C01B033/02 ,  C30B013/00 ,  C30B021/04 ,  C30B028/08

CPC分类号： C01B33/02 ,  B05B17/0623 ,  B22F2999/00 ,  C01B33/027 ,  B22F9/08 ,  B22F2202/01

摘要： The invention relates to a method and a device for producing globular grains of high-purity silicon by atomising a silicon melt (6) in an ultrasonic field (10). Globular grains having a grain size of 50 nullm can be produced by means of said method and device and can be used to separate high-purity silicon from silane in the fluid bed. The silicon melt (6) is fed into the ultrasonic field (10) at a distance of

摘要翻译： 本发明涉及一种通过在超声波场（10）中雾化硅熔体（6）来生产高纯度硅球颗粒的方法和装置。 粒径为50μm的球状颗粒可以通过所述方法和装置制备，并且可用于在流化床中将高纯度硅与硅烷分离。 硅熔体（6）相对于场节点以相对于场节点<50mm的距离被馈送到超声场（10）中，并且雾化的硅在接近液相点的温度离开超声场（10）。 本发明还涉及根据本发明方法生产的产品或使用本发明的装置作为在流化床中由硅烷生产高纯度硅的颗粒的用途。

公开(公告)号：US20030172866A1

公开(公告)日：2003-09-18

申请号：US10098757

申请日：2002-03-13

发明人： Sheng Teng Hsu ,  Jong-Jan Lee ,  Jer-shen Maa ,  Douglas J. Tweet

IPC分类号： C30B013/00 ,  C30B021/04 ,  C30B028/08

CPC分类号： H01L21/26506 ,  C30B1/023 ,  C30B29/52 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02502 ,  H01L21/0251 ,  H01L21/02513 ,  H01L21/02532 ,  H01L21/02694

摘要： A method is provided for forming a relaxed single-crystal silicon germanium film on a silicon substrate. Also provided is a film structure with a relaxed layer of graded silicon germanium on a silicon substrate. The method comprises: providing a silicon (Si) substrate with a top surface; growing a graded layer of strained single-crystal Si1-xGex having a bottom surface overlying the Si substrate top surface and a top surface, where x increases with the Si1-xGex layer thickness in the range between 0.03 and 0.5, wherein the Si1-xGex layer has a thickness in the range of 2500 null to 5000 null; implanting hydrogen ions; penetrating the Si substrate with the hydrogen ions a depth in the range of 300 null to 1000 null; implanting heavy ions, such as Si or Ge, into the Si1-xGex; in response to the heavy ion implantation, amorphizing a first region of the Si1-xGex layer adjacent the Si substrate; annealing; in response to the annealing, forming a hydrogen platelets layer between the Si substrate and the Si1-xGex layer; forming a silicon layer with a high density of hydrogen underlying the hydrogen platelets layer; and, forming a relaxed single-crystal Si1-xGex region, free of defects.

摘要翻译： 提供了一种在硅衬底上形成松弛的单晶硅锗膜的方法。 还提供了在硅衬底上具有缓和的渐变硅锗层的膜结构。 该方法包括：提供具有顶表面的硅（Si）衬底; 生长具有覆盖Si衬底顶表面的底表面和顶表面的应变单晶Si1-xGex的分级层，其中x随着Si1-xGex层厚度在0.03和0.5之间的范围增加，其中Si1-xGex 层的厚度在2500埃至5000埃的范围内; 植入氢离子; 用氢离子穿透Si衬底，深度在300埃至1000埃的范围内; 将诸如Si或Ge的重离子注入到Si1-xGex中; 响应于重离子注入，使与Si衬底相邻的Si1-xGex层的第一区域非晶化; 退火; 响应于退火，在Si衬底和Si1-xGex层之间形成氢血小板层; 在氢薄膜层下形成具有高密度氢的硅层; 并形成松弛的单晶Si1-xGex区域，没有缺陷。

公开(公告)号：US20030154909A1

公开(公告)日：2003-08-21

申请号：US10239944

申请日：2003-04-14

发明人： Pavel I. Lazarev ,  Victor V Nazarov ,  Natalya A Ovchinnikova

IPC分类号： C30B013/00 ,  C30B021/04 ,  C30B028/08 ,  H01L021/00

CPC分类号： B29C41/28 ,  B29C55/00 ,  B29K2105/0079 ,  G02B5/3016

摘要： The invention pertains to the methods of obtaining anisotropic crystalline films and to devices for carrying out the methods. A colloidal system with anisometric particles is applied as a film onto the surface of a substrate while the viscosity of the colloidal system is lowered. The particles of the colloidal system with lowered viscosity are oriented and the original viscosity of the colloidal system is restored. The film is then dried. The drying is carried out under controlled conditions. Zones of the dried film may be progressively heated to improve the film characteristics.

摘要翻译： 本发明涉及获得各向异性晶体膜的方法以及用于实施该方法的装置。 将具有不等角度颗粒的胶体体系作为膜施加到基材的表面上，同时胶体系的粘度降低。 具有降低粘度的胶体系统的颗粒被取向，并恢复胶体系统的原始粘度。 然后将膜干燥。 干燥在受控条件下进行。 可以逐渐加热干膜的区域以改善膜的特性。

公开(公告)号：US20030024469A1

公开(公告)日：2003-02-06

申请号：US10201431

申请日：2002-07-23

申请人： Wacker Siltronic Gesellschaft Fur Halbleitermaterialien AG

发明人： Ludwig Altmannshofer ,  Manfred Grundner ,  Janis Virbulis

IPC分类号： C30B013/00 ,  C30B021/04 ,  C30B028/08

CPC分类号： C30B29/06 ,  C30B13/26 ,  Y10T428/21

摘要： A silicon single crystal is produced by crucible-free float zone pulling, has a diameter of at least 200 mm over a length of at least 200 mm and is free of dislocations in the region of this length. A silicon wafer is separated from the silicon single crystal by a process for producing the silicon single crystal. The silicon single crystal is produced by crucible-free float zone pulling in a receptacle, in which an atmosphere of inert gas and nitrogen exerts a pressure of 1.5-2.2 bar, the atmosphere being continuously exchanged, with the volume of the receptacle being exchanged at least twice per hour. A flat coil with an external diameter of at least 220 mm is inserted in order to melt a stock ingot. The single crystal is pulled at a rate in a range from 1.4-2.2 mm/min and is periodically rotated through a sequence of rotation angles. The direction of rotation is changed, after each rotation, by a rotation angle belonging to the sequence, a change in the direction of rotating defining a turning point on the circumference of the single crystal, and at least one recurring pattern of turning points is formed, in which the turning points are distributed on straight lines which are oriented parallel to the z-axis and are uniformly spaced apart from one another.

摘要翻译： 通过无坩埚浮动区域拉伸制造硅单晶，在至少200mm的长度上具有至少200mm的直径，并且在该长度的区域中没有位错。 通过制造硅单晶的工艺将硅晶片与硅单晶分离。 硅单晶通过在容器中无坩埚浮动区域拉动而产生，其中惰性气体和氮气的气氛施加1.5-2.2巴的压力，连续更换气氛，将容器的体积更换为 每小时至少两次。 插入具有至少220mm的外径的扁平线圈以熔化原料锭。 单晶以1.4-2.2mm / min的速率被拉伸，并且通过一系列旋转角度周期性地旋转。 旋转方向在每次旋转之后改变属于该顺序的旋转角度，形成限定单晶圆周上的转折点的旋转方向的变化和至少一个转折点的重复图案 其中转折点分布在平行于z轴取向并且彼此均匀间隔开的直线上。

公开(公告)号：US20020112659A1

公开(公告)日：2002-08-22

申请号：US10066920

申请日：2002-02-04

申请人： Murata Manufacturing Co., Ltd.

发明人： Takenori Sekijima ,  Mikio Geho

IPC分类号： C30B013/00 ,  C30B028/08 ,  C30B021/04

CPC分类号： C30B13/24 ,  C30B13/00 ,  C30B29/28 ,  C30B29/30

摘要： A method of manufacturing a single crystal, for example, an oxide single crystal, without using any seed crystal, includes the steps of preparing a raw material polycrystalline rod, and then using either the Floating Zone Method or the Laser Heated Pedestal Growth Method heating and melting the raw material polycrystalline rod to form a molten zone and then cooling and solidifying the molten zone successively in the length direction, wherein a fiber-shaped single crystal, which is 3 mm or smaller in diameter, grows in the direction normal to the densest surface.

摘要翻译： 制造单晶的方法，例如氧化物单晶，不使用任何晶种，包括制备原料多晶棒的步骤，然后使用浮动区法或激光加热底座生长法加热和 熔化原料多晶棒以形成熔融区，然后在长度方向依次冷却和固化熔融区，其中直径为3mm或更小的纤维状单晶在垂直于最密的方向上生长 表面。

公开(公告)号：US20010044163A1

公开(公告)日：2001-11-22

申请号：US09723278

申请日：2000-11-29

发明人： Yoshihiro Tsukuda ,  Hiroshi Taniguchi ,  Kozaburou Yano ,  Kazuto Igarashi ,  Hidemi Mitsuyasu ,  Tohru Nunoi

IPC分类号： H01L021/00 ,  C30B013/00 ,  C30B021/04 ,  C30B028/08

CPC分类号： H01L31/02363 ,  Y02E10/50

摘要： An inexpensive sheet with excellent evenness and a desired uniform thickness can be obtained by cooling a base having protrusions, dipping the surfaces of the protrusions of the cooled base into a melt material containing at least one of a metal material and a semiconductor material for crystal growth of the material on the surfaces of the protrusions. In addition, by rotating a roller having on its peripheral surface protrusions and a cooling portion for cooling said protrusions, the surfaces of the cooled protrusions can be dipped into a melt material containing at least one of a metal material and a semiconductor material for crystal growth of the material on the surfaces of the protrusions. Thus, a sheet with a desired uniform thickness can be obtained without slicing process.

摘要翻译： 通过冷却具有突起的基底，将冷却的基底的突起的表面浸入包含金属材料和用于晶体生长的半导体材料中的至少一种的熔融材料中，可以获得具有优异均匀性和所需均匀厚度的廉价片材 的突起的表面上的材料。 此外，通过旋转具有其外周表面的突起的辊和用于冷却所述突起的冷却部分，冷却的突起的表面可以浸入包含金属材料和用于晶体生长的半导体材料中的至少一种的熔体材料中 的突起的表面上的材料。 因此，可以获得具有所需均匀厚度的片材而不需要切片处理。