Abstract:
The problem of the present invention is to provide a TEM sample equipped with an identifying function for easily specifying a detailed TEM sample and to provide a system for handling the management of information relating to the TEM sample using the TEM when making observations that is constructed with the FIB device manufacturing the sample. The TEM sample of the present invention is written with a mark encoding information specifying the sample at a specified location of a peripheral part. Information relating to the sample filed taking sample specifying information as an index is supplied to a TEM as associated matter. The sample working FIB device and observation TEM device of the present invention are provided with a function enabling writing of information relating to the sample and images to the file during operation which is then read out and utilized on a display.
Abstract:
The invention provides a method for the manufacture and transmissive irradiation of a sample, comprising the steps of: A Providing a particle-optical system having an internal low-pressure chamber and suitable for the generation of an electron beam and an intersecting ion beam in said chamber; B Providing a specimen within the chamber, carried by a manipulator; C Irradiating the specimen with the ion beam so as to cut a sample from the specimen; D Relatively displacing the sample thus cut to a sample holder than can be manipulated; E Attaching the sample to the sample holder; F Using an electron beam to perform transmissive irradiation of the sample thus attached to the sample holder, characterized in that step F is performed in the low-pressure chamber of the particle-optical system according to step A.
Abstract:
The present invention provides an analysis of displacement by calculating the phase variance image Pnull (k, l) between Fourier transformed images of paired images S1 (n, m) and S2 (n, m) to determine the center of gravity of null peak appearing on the invert Fourier transform image of the images. The present invention provides numerous advantages such as a precision of displacement analysis of a fraction of pixel to thereby allow to improve the precision of focal analysis, or reduced number of pixels required to achieve the same precision, evaluation of reliability of the analysis by using the null peak intensity, influence of varying background reduced by using a phase variance component. The improved performance by the present invention allows any operator skilled or not to achieve a best focusing.
Abstract:
In a transmission electron microscope with phase contrast imaging, the illumination of the object to be imaged takes place with an annular illuminating aperture. An annular phase-shifting element with a central aperture is arranged in a plane Fourier transformed with respect to the object plane. The annular phase-shifting element confers a phase shift of null/2 on a null beam, while the radiation of higher diffraction orders diffracted at the object in the direction of the optical axis passes through the central aperture of the annular phase-shifting element and consequently is not affected, or only slightly affected, by the phase-shifting element. The annular illuminating aperture is preferably produced sequentially in time by a deflecting system, which produces a beam tilt in a plane conjugate to the object plane.
Abstract:
In a method for inspecting positions and types of defects on wafers with circuit patterns in the semiconductor manufacturing process, a highly sensitive inspection is made regardless of the types and materials of junctions of circuit patterns of the semiconductor devices, different kinds of defects being distinguished from one another. Further, extraordinary electrification of the circuit pattern is prevented and an area to be exposed to an electron beam is controlled evenly and at a desired voltage. Thus, this method contributes to the early setup of manufacturing processes of integrated circuits and early measures against defects, increasing the reliability and productivity of the semiconductor devices. During an inspection of positions and types of defects on a wafer with a circuit pattern in the semiconductor manufacturing process, with the use of a charged-particle beam from a charged-particle source, an optical beam from an optical source as well as a charged-particle beam are applied to a junction of the circuit pattern of the wafer placed on a wafer holder. Thus, regardless of the types and materials of circuit patterns, a highly sensitive inspection is made according to contrasts of the defects in an image captured.
Abstract:
Phase manipulation is used to produce a high contrast electron microscope image. A phase plate is placed at the back focal plane of an objective lens and used to form a differential contrast image.
Abstract:
A lens system for use with a phase plate in a transmission electron microscope comprises a phase plate placed after the back-focal plane of the objective lens in an imaging system mounted downstream of the objective lens. Phase lenses image the back-focal plane of the objective lens onto the phase plate such that the position and tilt of the electron beam relative to the optical axis are made conjugate. An alignment coil may direct the electron beam going out of the phase lenses toward the phase plate. A second alignment coil may direct the electron beam going out of the phase plate toward the imaging lenses located after the phase plate.