公开(公告)号：US3544794A

公开(公告)日：1970-12-01

申请号：US3544794D

申请日：1967-08-29

Applicant: BELL TELEPHONE LABOR INC

Inventor： LYNCH WILLIAM T

IPC: H01L31/02 ,  H01L31/107 ,  H04B10/158 ,  H01J39/12 ,  H01L15/06 ,  H04B9/00

CPC classification number: H01L31/107 ,  H01L31/02027

公开(公告)号：US3679949A

公开(公告)日：1972-07-25

申请号：US3679949D

申请日：1970-09-23

Applicant: OMRON TATEISI ELECTRONICS CO

Inventor： UEKUSA GENZO ,  TANIMURA SHIGERU ,  HIGASHI KAZUHIRO ,  SUMOTO TAKAO

IPC: H01L21/285 ,  H01L27/144 ,  H01L3/00 ,  H01L15/06

CPC classification number: H01L21/28537 ,  H01L21/28581 ,  H01L27/1446

Abstract: A semiconductor composite having a rectifying characteristic is provided by depositing a tin oxide film on a semiconductor substrate. In view of the fact that the tin oxide film has high transparency and conductivity the composite can be used as an excellent photoelectric device. Preferably the tin oxide film is deposited on the substrate by reacting a halogenated organic tin compound with oxygen at an elevated temperature. Conductivity of the tin oxide film can be enhanced by incorporation of a small amount of antimony trichloride into the dimethyl tin dichloride. It was found that there are preferred reaction temperatures, time periods, and amount of mixed antimony trichloride for providing a composite having the desired characteristics. By depositing a plurality of separate tin oxide films on a single substrate by a photo-etching process of tin oxide film an integrated photoelectric apparatus is provided.

Abstract translation: 通过在半导体衬底上沉积氧化锡膜来提供具有整流特性的半导体复合体。 考虑到氧化锡膜具有高的透明度和导电性，复合材料可以用作优异的光电器件。

公开(公告)号：US3673011A

公开(公告)日：1972-06-27

申请号：US3673011D

申请日：1970-11-02

Applicant: WESTINGHOUSE ELECTRIC CORP

Inventor： STRULL GENE

IPC: H01J9/12 ,  H01L7/34 ,  H01L15/06

CPC classification number: H01J9/12 ,  Y10S148/006 ,  Y10S148/017 ,  Y10S148/056 ,  Y10S148/12

Abstract: A PHOTOCATHODE IS COMPRISED OF A MONOCRYSTALLINE LAYER OF GALLIUM ARSENIDE GROWN ON EITHER A GERMANIUM OR A GALLIM ARSENIDE SUBSTRATE. A MONATOMIC LAYER OF CESIUM IS DISPOSED ON THE MONOCRYSTALLINE LAYER. AN ELECTRIC CONTACT AFFIXED TO THE PHOTOCATHODE PROVIDES A MEANS FOR CONNECTING IT ELECTRICALLY INTO ELECTRICAL CIRCUITS. THE GALLIUM ARSENIDE AND THE CESIUM ARE DEPOSITED ON THE SUBSTRATE IN ESSENTIALLY ONE CONTINOUS GROWTH PROCESS.

公开(公告)号：US3585430A

公开(公告)日：1971-06-15

申请号：US3585430D

申请日：1968-08-23

Applicant: RCA CORP

Inventor： SIMON RALPH E ,  RODGERS ROBERT L

IPC: H01J29/45 ,  H01L29/00 ,  H01J31/28 ,  H01L15/06

CPC classification number: H01J29/456 ,  H01L29/00

Abstract: A continuous barrier single crystal GaAs1 xPx vidicon target is provided with a thin semi-insulating layer of antimony trisulfide on its scanned side to prevent higher energy beam electrons from traveling through the barrier to a signal plate as dark current.

公开(公告)号：US3577175A

公开(公告)日：1971-05-04

申请号：US3577175D

申请日：1969-07-03

Applicant: AVCO CORP

Inventor： GRI NORMAN I ,  YON EUGENE T

IPC: H01L21/316 ,  H01L23/29 ,  H01L23/485 ,  H01L27/146 ,  H01L31/00 ,  H01L31/0224 ,  H01L31/103 ,  H01L15/06

CPC classification number: H01L31/1035 ,  H01L21/31654 ,  H01L23/291 ,  H01L23/485 ,  H01L24/45 ,  H01L24/49 ,  H01L27/14649 ,  H01L31/00 ,  H01L31/022408 ,  H01L2224/45144 ,  H01L2224/49107 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/12036 ,  H01L2924/14 ,  H01L2924/3011 ,  Y10S148/005 ,  Y10S148/02 ,  Y10S148/065 ,  Y10S148/08 ,  Y10S148/118 ,  H01L2224/48 ,  H01L2224/05599 ,  H01L2924/00

Abstract: The invention here disclosed is an indium antimonide infrared detector having a novel contact region. The detector comprises a substrate, constituted of an N-material with a P-region fused thereon. An anodized surface oxide film is superimposed over the diffused P-region and over the adjacent surface of the substrate. A silicon oxide layer is disposed over most of the anodized surface oxide film but exposes a portion of the P-region which portion comprises superimposed layers of chromium and gold which form the contact region, said layers masking the contact area and rendering it insensitive to infrared radiation and simultaneously providing a pad to which an electrical connection may conveniently be made.

公开(公告)号：US3558897A

公开(公告)日：1971-01-26

申请号：US3558897D

申请日：1969-01-27

Applicant: GEORGE A MAY

Inventor： MAY GEORGE A

IPC: H01L27/15 ,  H01L29/00 ,  H01L33/00 ,  H01L15/06

CPC classification number: H01L33/0041 ,  H01L27/15 ,  H01L29/00 ,  H01L33/00

Abstract: An elongated light-emitting multilayer semiconductor device having a modified metal insulator-semiconductor field effect transistor substructure producing a spot of light controllably variable in intensity and position, and scanning devices including one or more of such devices in combination with lightresponsive elements.

公开(公告)号：US3555283A

公开(公告)日：1971-01-12

申请号：US3555283D

申请日：1965-02-24

Applicant: PHILIPS CORP

Inventor： GRIMMEISS HERMANN GEORG ,  SIMONS PETER JOHANNES PHILIPPU

IPC: H01L27/15 ,  H01L31/00 ,  H01L31/12 ,  H01L31/14 ,  H01L33/00 ,  H01S5/323 ,  H01L15/06

CPC classification number: H01L33/00 ,  H01L27/15 ,  H01L31/00 ,  H01L31/12 ,  H01L31/14 ,  H01S5/323

Abstract: A controllable injection recombination radiation or light source comprising a semiconductor having an intermediate level in its forbidden gap is described. The output radiation is controlled or modulated by controlling or modulating the electron population of the intermediate level using an auxiliary source of radiation to irradiate the semiconductor.

公开(公告)号：US3539816A

公开(公告)日：1970-11-10

申请号：US3539816D

申请日：1968-08-20

Applicant: NCR CO

Inventor： CHAMBERLIN RHODES R

IPC: G03B21/32 ,  G11B23/027 ,  H01L27/144 ,  H01L31/0336 ,  H01L31/16 ,  H01L31/18 ,  H01L15/06

CPC classification number: H01L31/1836 ,  G03B21/323 ,  G11B23/027 ,  H01L27/144 ,  H01L31/03365 ,  H01L31/164 ,  Y02E10/50