Circuit device
    21.
    发明授权

    公开(公告)号:US11081431B2

    公开(公告)日:2021-08-03

    申请号:US16612890

    申请日:2018-04-26

    Inventor: Jun Ikeda

    Abstract: A circuit device includes a first conductive plate and a second conductive plate each having a belt-shaped portion arranged side-by-side with each other, a third conductive plate having a belt-shaped portion is arranged side-by-side with and spaced apart from the other side portion of the first conductive plate, a first circuit component having a first terminal connected to the first conductive plate and a second terminal connected to the second conductive plate, a second circuit component having a first terminal connected to the first conductive plate and a second terminal connected to the third conductive plate, a first external connection portion provided at the belt-shaped portion of the first conductive plate, and a second external connection portion provided at the belt-shaped portion of the second conductive plate or a third external connection portion provided at the belt-shaped portion of the third conductive plate.

    CONNECTION ELECTRODE AND METHOD FOR MANUFACTURING CONNECTION ELECTRODE

    公开(公告)号:US20210202424A1

    公开(公告)日:2021-07-01

    申请号:US17203847

    申请日:2021-03-17

    Inventor: Ryosuke SAKAI

    Abstract: A connection electrode includes a first metal film, a second metal film, a mixed layer, and an extraction electrode. The second metal film is located on the first metal film, and the extraction electrode is located on the second metal film. The mixed layer includes a mix of metal particles of the first and second metal films. As viewed in a first direction in which the first metal film and the second metal film are on top of each other, at least a portion of the mixed layer is in a first region that overlaps a bonding plane between the extraction electrode and the second metal film.

    THROUGH ELECTRODE SUBSTRATE AND SEMICONDUCTOR DEVICE

    公开(公告)号:US20210028090A1

    公开(公告)日:2021-01-28

    申请号:US17070374

    申请日:2020-10-14

    Inventor: Satoru KURAMOCHI

    Abstract: A through electrode substrate includes a substrate having a through hole extending through between a first face and a second face, a diameter of the through hole not having a minimum value inside the through hole; and a conductor arranged inside the through hole, wherein the through hole has a shape having a value obtained by summing a first to an eighth inclination angle at a first to an eighth position, respectively, of an inner face of the through hole of 8.0° or more, each of the first to the eighth inclination angle is an angle of the inner face with respect to a center axis of the through hole, and the first to the eighth position correspond to positions at distances of 6.25%, 18.75%, 31.25%, 43.75%, 56.25%, 68.75%, 81.25%, and 93.75%, respectively, from the first face in a section from the first face to the second face.

    Semiconductor device and electronic apparatus

    公开(公告)号:US10770490B2

    公开(公告)日:2020-09-08

    申请号:US16438116

    申请日:2019-06-11

    Inventor: Yukihiro Ando

    Abstract: The present disclosure relates to a semiconductor device and an electronic apparatus which is capable of reducing variations and deterioration of transistor characteristics. A first connection pad connected with a first wiring and a first floating metal greater than the first connection pad are formed at a bonding surface of a first substrate, whereas a second connection pad connected with a second wiring and a second floating metal greater than the second connection pad are formed at a bonding surface of a second substrate. The first floating metal and the second floating metal formed at the first substrate and the second substrate are bonded to each other. The present disclosure is applicable to a CMOS solid-state imaging device used for an imaging apparatus such as a camera, for example.

    Socket cavity insulator
    28.
    发明授权

    公开(公告)号:US10729010B2

    公开(公告)日:2020-07-28

    申请号:US15941427

    申请日:2018-03-30

    Abstract: The present subject matter may include an electronic device. The electronic device may include a motherboard socket body. The motherboard socket body may be adapted to couple with a processor. The motherboard socket body may define an aperture in the motherboard socket body. The electronic device may include a socket insulator. The socket insulator may be coupled with the aperture in the motherboard socket body. The socket insulator may include an insulator body that may be sized and shaped to close the aperture in the motherboard socket body. The socket insulator may be configured to isolate electrical communication in portions of the motherboard socket body.

    Film sensors array and method
    30.
    发明授权

    公开(公告)号:US10685944B2

    公开(公告)日:2020-06-16

    申请号:US15790057

    申请日:2017-10-23

    Abstract: In accordance with an embodiment, sensor structure has a first, second, and third laminated structures. The second laminated structure is positioned between the first laminated structure and the third laminated structure. The first laminated structure includes a first portion of a first sensing element and the third laminated structure includes a second portion of the first sensing element. The second laminated structure includes spacer elements that can be used to adjust the sensitivity of the sensor structure.

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