Electron-poor orthoester for generating acid in a well fluid
    301.
    发明授权
    Electron-poor orthoester for generating acid in a well fluid 有权
    用于在井液中产生酸的电子差的原酸酯

    公开(公告)号:US08955588B2

    公开(公告)日:2015-02-17

    申请号:US13608602

    申请日:2012-09-10

    CPC classification number: C09K8/72 C09K8/52 C09K8/74

    Abstract: In an embodiment, a method is provided including the steps of: (A) introducing a well fluid comprising an electron-poor orthoester into a well; and (B) allowing or causing the electron-poor orthoester to hydrolyze to produce an acid and an alcohol in the well. In another embodiment, a water-based well fluid is provided, the well fluid including: (A) a continuous aqueous phase having a pH of a least 6; (B) an electron-poor orthoester; and (C) a viscosity-increasing agent.

    Abstract translation: 在一个实施方案中,提供了一种方法,包括以下步骤:(A)将包含电子贫乏的原酸酯的井液引入井中; 和(B)允许或引起电子贫乏的原酸酯在井中水解以产生酸和醇。 在另一个实施方案中,提供了一种水基井液,井流体包括:(A)pH至少为6的连续水相; (B)无电子的原酸酯; 和(C)增粘剂。

    Failsafe galvanic isolation barrier
    308.
    发明授权
    Failsafe galvanic isolation barrier 有权
    故障电流隔离屏障

    公开(公告)号:US08625242B2

    公开(公告)日:2014-01-07

    申请号:US13197136

    申请日:2011-08-03

    Abstract: A system includes a transmitter, a receiver, a isolation barrier, and a fuse. The isolation barrier is connected to the transmitter. The fuse is connected between the isolation barrier and the receiver. The isolation barrier prevents current flow from the transmitter to the receiver when a voltage across the isolation barrier is less than a first breakdown voltage. The isolation barrier short circuits when the voltage across the isolation barrier is greater than or equal to the first breakdown voltage. The fuse opens when the isolation barrier short circuits. When open, the fuse has a second breakdown voltage that is greater than the first breakdown voltage.

    Abstract translation: 系统包括发射机,接收机,隔离屏障和保险丝。 隔离屏障连接到变送器。 保险丝连接在隔离屏障和接收器之间。 当隔离隔离层上的电压小于第一击穿电压时,隔离屏障防止电流从发射器流向接收器。 当隔离屏障上的电压大于或等于第一击穿电压时,隔离栅短路。 保险丝断开时隔离屏障短路。 当断开时,保险丝的第二击穿电压大于第一击穿电压。

    Silicon carbide semiconductor device and method of manufacturing the same
    309.
    发明授权
    Silicon carbide semiconductor device and method of manufacturing the same 有权
    碳化硅半导体器件及其制造方法

    公开(公告)号:US08575648B2

    公开(公告)日:2013-11-05

    申请号:US12976116

    申请日:2010-12-22

    Abstract: A silicon carbide semiconductor device having a JFET or a MOSFET includes a semiconductor substrate and a trench. The semiconductor substrate has a silicon carbide substrate, a drift layer on the silicon carbide substrate, a first gate region on the drift layer, and a source region on the first gate region. The trench has a strip shape with a longitudinal direction and reaches the drift layer by penetrating the source region and the first gate region. The trench is filled with a channel layer and a second gate region on the channel layer. The source region is not located at an end portion of the trench in the longitudinal direction.

    Abstract translation: 具有JFET或MOSFET的碳化硅半导体器件包括半导体衬底和沟槽。 半导体衬底具有碳化硅衬底,碳化硅衬底上的漂移层,漂移层上的第一栅极区域和第一栅极区域上的源极区域。 沟槽具有纵向方向的带状,并通过穿透源极区域和第一栅极区域而到达漂移层。 在沟道层上填充沟道层和第二栅极区域。 源极区域不位于沟槽的纵向方向的端部。

Patent Agency Ranking