公开(公告)号：US20130057298A1

公开(公告)日：2013-03-07

申请号：US13669732

申请日：2012-11-06

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Francesco La Rosa

IPC: G01R27/26

CPC classification number: G01R27/2605 ,  G06F3/0416 ,  G06F3/044

Abstract: The disclosure relates to a method for characterizing or measuring a capacitance, comprising: linking the capacitance to a first mid-point of a first capacitive divider bridge, applying to the divider bridge a bias voltage, maintaining the voltage of the first mid-point near a reference voltage, discharging a second mid-point of a second divider bridge in parallel with the first by means of a constant current, and measuring the time for a voltage of the second mid-point to become equal to the voltage of the first mid-point. The disclosure may be applied in particular to the control of a touch screen display.

Abstract translation: 本发明涉及一种用于表征或测量电容的方法，包括：将电容连接到第一电容分压器桥的第一中点，将分压电桥施加偏置电压，将第一中点的电压保持在接近 参考电压，通过恒定电流将与第一分压器并联的第二分压电桥的第二中点放电，并且测量第二中点的电压的时间变得等于第一中间电压的电压 -点。 本公开可以特别地应用于触摸屏显示器的控制。

公开(公告)号：US20130026597A1

公开(公告)日：2013-01-31

申请号：US13646828

申请日：2012-10-08

Applicant: STMICROELECTRONICS (ROUSSET) SAS

Inventor： CHRISTIAN RIVERO ,  PASCAL FORNARA

IPC: H01L29/66

CPC classification number: H01L35/30 ,  H01L27/16 ,  H01L35/00 ,  H01L37/00

Abstract: An integrated circuit may include a region containing a thermoelectric material and be configured to be subjected to a temperature gradient resulting from a flow of an electric current in a part of the integrated circuit during its operation, and an electrically conducting output coupled to the region for delivering the electrical energy produced by thermoelectric material.

Abstract translation: 集成电路可以包括含有热电材料的区域，并且被配置为经受在其工作期间在集成电路的一部分中的电流流动导致的温度梯度，以及耦合到该区域的导电输出 传递由热电材料产生的电能。

公开(公告)号：US12289884B2

公开(公告)日：2025-04-29

申请号：US17747540

申请日：2022-05-18

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Romeric Gay ,  Abderrezak Marzaki

IPC: H10B41/40 ,  H10B41/30

Abstract: A bipolar transistor includes a common collector region comprising a buried semiconductor layer and an annular well. A well region is surrounded by the annular well and delimited by the buried semiconductor layer. A first base region and a second base region are formed by the well region and separated from each other by a vertical gate structure. A first emitter region is implanted in the first base region, and a second emitter region is implanted in the second base region. A conductor track electrically couples the first emitter region and the second base region to configure the bipolar transistor as a Darlington-type device. Structures of the bipolar transistor may be fabricated in a co-integration with a non-volatile memory cell.

公开(公告)号：US12282589B2

公开(公告)日：2025-04-22

申请号：US18167521

申请日：2023-02-10

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Nicolas Demange

IPC: G06F21/81 ,  H02M3/155 ,  H03F3/45 ,  H03K17/687

Abstract: An electronic device includes a power supply terminal, a voltage regulator connected to the power supply terminal, an electronic module connected to the voltage regulator, and a compensation circuit configured to receive an auxiliary current generated by the voltage regulator and being equal to a first fraction of the electronic module current. The compensation circuit includes a current source configured to supply a source current to a cold point, and a compensation stage connected to the power supply terminal and being traversed by an intermediate current equal to a difference between the source current and the auxiliary current and by a complementary current equal to the intermediate current multiplied by an inverse multiplication factor of the first fraction.

公开(公告)号：US12267126B2

公开(公告)日：2025-04-01

申请号：US18125024

申请日：2023-03-22

Applicant: STMicroelectronics (Grenoble 2) SAS ,  STMicroelectronics (Rousset) SAS

Inventor： Sylvie Wuidart ,  Sophie Maurice

IPC: H04B5/00 ,  G06F21/60 ,  G06K7/10 ,  G08C15/06 ,  H04B5/72 ,  H04W88/18 ,  H04W4/80 ,  H04W88/02

Abstract: A near-field communication device operates to transmit data by near-field communications techniques to another device. The near-field communication device includes a memory that stores a message to be transmitted in an ASCII format. The message is retrieved from the memory and transmitted using the near-field communications techniques in an ASCII format.

公开(公告)号：US12262649B2

公开(公告)日：2025-03-25

申请号：US17508754

申请日：2021-10-22

Applicant: STMICROELECTRONICS (ROUSSET) SAS

Inventor： Philippe Boivin

IPC: H10N70/20 ,  H10N70/00

Abstract: The present description concerns a device including phase-change memory cells, each memory cell including a first resistive element in lateral contact with a second element made of a phase-change material.

公开(公告)号：US12250303B2

公开(公告)日：2025-03-11

申请号：US17820843

申请日：2022-08-18

Applicant: STMICROELECTRONICS (ROUSSET) SAS

Inventor： Guilhem Assael

IPC: H04L9/08 ,  G06F7/72

Abstract: The present disclosure relates to a cryptographic method comprising: multiplying a point belonging to a mathematical set with a group structure by a scalar by performing: the division of a scalar into a plurality of groups formed of a same number w of digits, w being greater than or equal to 2; and the execution, by a cryptographic circuit and for each group of digits, of a sequence of operations on point, the sequence of operations being identical for each group of digits, at least one of the operations executed for each of the groups of digits being a dummy operation.

公开(公告)号：US12209889B2

公开(公告)日：2025-01-28

申请号：US18155531

申请日：2023-01-17

Applicant: STMicroelectronics (Rousset) SAS ,  STMicroelectronics France ,  STMicroelectronics (Grenoble 2) SAS

Inventor： Laurent Beyly ,  Olivier Richard ,  Kenichi Oku

IPC: G01D5/24 ,  H03K17/96

Abstract: An embodiment of the present disclosure relates to a method of detection of a touch contact by a sensor including a first step of comparison of a voltage with a first voltage threshold; and a second step of comparison of the voltage with a second voltage threshold, the second step being implemented if the first voltage threshold has been reached within a duration shorter than a first duration threshold, the second voltage threshold being higher than the first voltage threshold.

公开(公告)号：US12198756B2

公开(公告)日：2025-01-14

申请号：US18158232

申请日：2023-01-23

Applicant: STMICROELECTRONICS S.r.l. ,  STMICROELECTRONICS (ROUSSET) SAS

Inventor： Antonino Conte ,  Francesco La Rosa

IPC: G11C11/16 ,  G11C13/00 ,  G11C16/22 ,  H01L23/00

Abstract: Unclonable function circuitry includes a plurality of pairs of phase-change memory cells in a virgin state, and sensing circuitry coupled to the plurality of pairs of phase-change memory cells in the virgin state. The sensing circuitry identifies a subset of the plurality of pairs of phase-change memory cells in the virgin state based on a reliability mask. Signs of differences of effective resistance values of the identified subset of the plurality of pairs of phase-change memory cells in the virgin state are sensed by the sensing circuitry. The sensing circuitry generates a string of bits based on the sensed signs of differences in the effective resistance values of the identified subset of the plurality of pairs of phase-change memory cells in the virgin state. Processing circuitry coupled to the unclonable function circuitry, in operation, executes one or more operations using the generated string of bits.

公开(公告)号：US20250015016A1

公开(公告)日：2025-01-09

申请号：US18887429

申请日：2024-09-17

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Pascal FORNARA ,  Fabrice MARINET

IPC: H01L23/00 ,  G06F21/75 ,  G06F21/79 ,  G06F21/87 ,  H01L23/522 ,  H01L29/788 ,  H10B41/35

Abstract: An integrated circuit memory includes a state transistor having a floating gate which stores a respective data value. A device for protecting the data stored in the memory includes a capacitive structure having a first electrically-conducting body coupled to the floating gate of the state transistor, a dielectric body, and a second electrically-conducting body coupled to a ground terminal. The dielectric body is configured, if an aqueous solution is brought into contact with the dielectric body, to electrically couple the floating gate and the ground terminal so as to modify the charge on the floating gate and to lose the corresponding data. Otherwise, the dielectric body is configured to electrically isolate the floating gate and the ground terminal.