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    Method for power management of data buses in electronic devices
    331.
    发明申请
    Method for power management of data buses in electronic devices 有权
    电子设备数据总线电源管理方法

    公开(公告)号：US20110320841A1

    公开(公告)日：2011-12-29

    申请号：US12924192

    申请日：2010-09-21

    Applicant: Rajesh Kumar Sinha

    Inventor： Rajesh Kumar Sinha

    IPC: G06F1/32 ,  G06F3/00

    CPC classification number: G06F1/3203 ,  G06F1/3253 ,  Y02D10/151 ,  Y02D10/155

    Abstract: Provided are systems and methods for execution by a core of a peripheral component to provide power management for a data bus in a electronic device, suhc as a mobile electronic device. One method comprises determining whether a device in the peripheral component is inactive, transmitting a request for deactivation of at least one data channel to the device, receiving a command to deactivate the at least one data channel, determining whether any remaining devices in the peripheral component are active, and placing the peripheral component in a first low power mode wherein the core remains active in order to monitor a data bus clock.

    Abstract translation: 提供了用于由外围组件的核心执行以提供电子设备中的数据总线的电源管理的系统和方法，作为移动电子设备。 一种方法包括确定外围组件中的设备是否不活动，向设备发送至少一个数据信道的去激活请求，接收去激活至少一个数据信道的命令，确定外围组件中是否有剩余设备 并且将外围组件放置在第一低功率模式中，其中核心保持活动以监视数据总线时钟。

    Admission control based on QoS performance in a wireless communication network
    337.
    发明授权
    Admission control based on QoS performance in a wireless communication network 有权
    基于无线通信网络中的QoS性能的接入控制

    公开(公告)号：US08014280B2

    公开(公告)日：2011-09-06

    申请号：US12190696

    申请日：2008-08-13

    Applicant: Danlu Zhang ,  Naga Bhushan ,  Rajesh Kumar Pankaj

    Inventor： Danlu Zhang ,  Naga Bhushan ,  Rajesh Kumar Pankaj

    IPC: H04W28/08 ,  H04W28/12 ,  H04W28/16 ,  H04L12/26 ,  G08C17/02

    CPC classification number: H04W28/16

    Abstract: Techniques for performing admission control based on quality-of-service (QoS) performance in a wireless communication network are described. QoS performance (e.g., delay or throughput performance) of admitted data flows may be determined. Whether to admit or reject a new data flow may then be determined based on the QoS performance of the admitted data flows. The admitted and new data flows may have delay bounds. The QoS performance of the admitted data flows may be given by a measured sector delay, which may be determined based on actual delays of packets. A measured flow delay for each admitted data flow may be determined based on delays of packets for that flow. The measured sector delay may then be determined based on the measured flow delays for all admitted data flows. The new data flow may be admitted if the measured sector delay is less than a delay threshold.

    Abstract translation: 描述了用于在无线通信网络中基于服务质量（QoS）性能执行准入控制的技术。 可以确定允许的数据流的QoS性能（例如，延迟或吞吐量性能）。 然后可以基于允许的数据流的QoS性能来确定是否允许或拒绝新的数据流。 承认的和新的数据流可能有延迟的界限。 允许的数据流的QoS性能可以由测量的扇区延迟来给出，其可以基于分组的实际延迟来确定。 可以基于该流的分组的延迟来确定每个被允许的数据流的测量流延迟。 然后可以基于所测量的所有允许数据流的流量延迟来确定所测量的扇区延迟。 如果测量的扇区延迟小于延迟阈值，则可以允许新的数据流。

    SIC SEMICONDUCTOR DEVICE HAVING CJFET AND METHOD FOR MANUFACTURING THE SAME
    339.
    发明申请
    SIC SEMICONDUCTOR DEVICE HAVING CJFET AND METHOD FOR MANUFACTURING THE SAME 有权
    具有CJFET的SIC半导体器件及其制造方法

    公开(公告)号：US20110198612A1

    公开(公告)日：2011-08-18

    申请号：US13012123

    申请日：2011-01-24

    Applicant: Rajesh Kumar MALHAN

    Inventor： Rajesh Kumar MALHAN

    IPC: H01L29/24 ,  H01L21/761

    CPC classification number: H01L29/808 ,  H01L21/7602 ,  H01L21/8213 ,  H01L27/098 ,  H01L29/1608 ,  H01L29/66068

    Abstract: A SiC semiconductor device includes: a SiC substrate made of intrinsic SiC having semi-insulating property; first and second conductive type SiC layers disposed in the substrate; an insulation separation layer made of intrinsic SiC for isolating the first conductive type SiC layer from the second conductive type SiC layer; first and second conductive type channel JFETs disposed in the first and second conductive type SiC layers, respectively. The first and second conductive type channel JFETs provide a complementary junction field effect transistor. Since an electric element is formed on a flat surface, a manufacturing method is simplified. Further, noise propagation at high frequency and current leakage at high temperature are restricted.

    Abstract translation: SiC半导体器件包括：由具有半绝缘性的本征SiC制成的SiC衬底; 设置在基板中的第一和第二导电型SiC层; 由本征SiC制成的绝缘分离层，用于将第一导电型SiC层与第二导电型SiC层隔离; 分别设置在第一和第二导电型SiC层中的第一和第二导电型沟道JFET。 第一和第二导电型沟道JFET提供互补结型场效应晶体管。 由于电气元件形成在平坦表面上，所以制造方法简单。 此外，高频下的噪声传播和高温下的电流泄漏受到限制。

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