公开(公告)号：US07230283B2

公开(公告)日：2007-06-12

申请号：US11138298

申请日：2005-05-27

Applicant: Takasumi Ohyanagi ,  Atsuo Watanabe ,  Rajesh Kumar Malhan ,  Tsuyoshi Yamamoto ,  Toshiyuki Morishita

Inventor： Takasumi Ohyanagi ,  Atsuo Watanabe ,  Rajesh Kumar Malhan ,  Tsuyoshi Yamamoto ,  Toshiyuki Morishita

IPC: H01L29/74 ,  H01L31/111

CPC classification number: H01L29/66416 ,  H01L29/1608 ,  H01L29/7722 ,  H01L29/8083

Abstract: A silicon carbide semiconductor device such as JFET, SIT and the like is provided for accomplishing a reduction in on-resistance and high-speed switching operations. In the JFET or SIT which turns on/off a current with a depletion layer extending in a channel between a gate region formed along trench grooves, a gate contact layer and a gate electrode, which can be supplied with voltages from the outside, are formed on one surface of a semiconductor substrate or on the bottom of the trench groove. A metal conductor (virtual gate electrode) is formed in ohmic contact with a p++ contact layer of the gate region on the bottom of the trench grooves independently of the gate electrode. The virtual gate electrode is electrically isolated from the gate electrode and an external wire.

Abstract translation: 提供诸如JFET，SIT等的碳化硅半导体器件用于实现导通电阻和高速开关操作的降低。 在JFET或SIT中，形成在沿着沟槽形成的栅极区之间的沟道中延伸的耗尽层的电流，可以从外部供应电压的栅极接触层和栅极电极 在半导体衬底的一个表面上或在沟槽槽的底部。 金属导体（虚拟栅电极）与沟槽沟槽底部的栅极区域的p ++接触层独立于栅电极形成欧姆接触。 虚拟栅电极与栅极电极和外部电线电隔离。

公开(公告)号：US20070102708A1

公开(公告)日：2007-05-10

申请号：US11594896

申请日：2006-11-09

Applicant: Rajesh Kumar ,  Florin Udrea ,  Andrei Mihaila

Inventor： Rajesh Kumar ,  Florin Udrea ,  Andrei Mihaila

IPC: H01L31/0312 ,  H01L29/76

CPC classification number: H01L29/66068 ,  H01L27/0705 ,  H01L27/088 ,  H01L29/1608 ,  H01L29/808 ,  H01L29/8083

Abstract: A semiconductor device includes a first field effect transistor including a source and a gate and disposed in a silicon carbide substrate; and a second field effect transistor including a drain and a gate and disposed in the substrate. The drain of the second field effect transistor connects to the source of the first field effect transistor. The gate of the second field effect transistor connects to the gate of the first field effect transistor.

Abstract translation: 半导体器件包括：第一场效应晶体管，其包括源极和栅极，并设置在碳化硅衬底中; 以及包括漏极和栅极并设置在所述衬底中的第二场效应晶体管。 第二场效应晶体管的漏极连接到第一场效应晶体管的源极。 第二场效应晶体管的栅极连接到第一场效应晶体管的栅极。

公开(公告)号：US07173284B2

公开(公告)日：2007-02-06

申请号：US10230115

申请日：2002-08-29

Applicant: Rajesh Kumar ,  Tsuyoshi Yamamoto ,  Hiroki Nakamura

Inventor： Rajesh Kumar ,  Tsuyoshi Yamamoto ,  Hiroki Nakamura

IPC: H01L29/15

CPC classification number: H01L29/66068 ,  H01L29/1608 ,  H01L29/8083 ,  Y10S438/931

Abstract: A silicon carbide semiconductor device that includes J-FETs has a drift layer of epitaxially grown silicon carbide having a lower impurity concentration level than a substrate on which the drift layer is formed. Trenches are formed in the surface of the drift layer, and first gate areas are formed on inner walls of the trenches. Second gate areas are formed in isolation from the first gate areas. A source area is formed on channel areas, which are located between the first and second gate areas in the drift layer. A method of manufacturing the device ensures uniform channel layer quality, which allows the device to have a normally-off characteristic, small size, and a low likelihood of defects.

Abstract translation: 包括J-FET的碳化硅半导体器件具有与形成有漂移层的衬底相比杂质浓度水平低的外延生长碳化硅的漂移层。 沟槽形成在漂移层的表面中，并且第一栅极区域形成在沟槽的内壁上。 第二栅极区域与第一栅极区域隔离形成。 源极区域形成在位于漂移层中的第一和第二栅极区域之间的沟道区域上。 制造该器件的方法确保了均匀的沟道层质量，这允许器件具有常规特性，小尺寸和低缺陷可能性。

公开(公告)号：US07154130B2

公开(公告)日：2006-12-26

申请号：US10776338

申请日：2004-02-12

Applicant: Rajesh Kumar ,  Florin Udrea ,  Andrei Mihaila

Inventor： Rajesh Kumar ,  Florin Udrea ,  Andrei Mihaila

IPC: H01L29/74 ,  H01L31/111

CPC classification number: H01L29/66068 ,  H01L27/0705 ,  H01L27/088 ,  H01L29/1608 ,  H01L29/808 ,  H01L29/8083

Abstract: A semiconductor device includes a first field effect transistor including a source and a gate and disposed in a silicon carbide substrate; and a second field effect transistor including a drain and a gate and disposed in the substrate. The drain of the second field effect transistor connects to the source of the first field effect transistor. The gate of the second field effect transistor connects to the gate of the first field effect transistor.

公开(公告)号：US20060284217A1

公开(公告)日：2006-12-21

申请号：US11501777

申请日：2006-08-10

Applicant: Rajesh Kumar ,  Yuichi Takeuchi ,  Mitsuhiro Kataoka ,  Suhail Jeremy ,  Andrei Mihaila ,  Florin Udrea

Inventor： Rajesh Kumar ,  Yuichi Takeuchi ,  Mitsuhiro Kataoka ,  Suhail Jeremy ,  Andrei Mihaila ,  Florin Udrea

IPC: H01L29/80

CPC classification number: H01L29/8083 ,  H01L29/1608

Abstract: A silicon carbide semiconductor device includes: a semiconductor substrate including first and second gate layers, a channel layer, a source layer, and a trench; a gate wiring having a first portion and a plurality of second portions; and a source wiring having a third portion and a plurality of fourth portions. The trench extends in a predetermined extending direction. The first portion connects to the first gate layer in the trench, and extends to the extending direction. The second portions protrude perpendicularly to be a comb shape. The third portion extends to the extending direction. The fourth portions protrude perpendicularly to be a comb shape, and electrically connect to the source layer. Each of the second portions connects to the second gate layer through a contact hole.

Abstract translation: 碳化硅半导体器件包括：包括第一和第二栅极层，沟道层，源极层和沟槽的半导体衬底; 栅极布线，具有第一部分和多个第二部分; 以及具有第三部分和多个第四部分的源极布线。 沟槽沿预定的延伸方向延伸。 第一部分连接到沟槽中的第一栅极层，并延伸到延伸方向。 第二部分垂直突出成为梳形。 第三部分延伸到延伸方向。 第四部分垂直突出成梳状，并且电连接到源层。 每个第二部分通过接触孔连接到第二栅极层。

公开(公告)号：US20060274756A1

公开(公告)日：2006-12-07

申请号：US11488118

申请日：2006-07-17

Applicant: Snehal Karia ,  Rajesh Kumar

Inventor： Snehal Karia ,  Rajesh Kumar

IPC: H04L12/56

CPC classification number: H04L47/24 ,  H04L47/15 ,  H04L47/70 ,  H04L47/762 ,  H04L47/803 ,  H04L47/822 ,  H04L2012/563 ,  H04L2012/5636

Abstract: Methods and apparatus are disclosed for changing the bandwidth or other traffic characteristic of an established packet call in response to an identification of the requirements of the call. For example, in response to the detection of a type of call, such as a fax or modem call, ATM signaling is performed with peer signaling agent(s) located in the ATM network to increase the bandwidth of an already established portion of a call through the ATM network. This signaling typically includes sending a call modify request message and receiving a modify acknowledgement message, with these messages typically, but not limited to, conforming with a Q.2963 signaling standard.

Abstract translation: 公开了用于响应于呼叫要求的识别来改变已建立分组呼叫的带宽或其他业务特性的方法和装置。 例如，响应于诸如传真或调制解调器呼叫的呼叫类型的检测，ATM信令与位于ATM网络中的对等信令代理一起执行以增加呼叫已经建立的部分的带宽 通过ATM网络。 该信令通常包括发送呼叫修改请求消息并接收修改确认消息，其中这些消息通常但不限于符合Q.2963信令标准。

公开(公告)号：US07125502B2

公开(公告)日：2006-10-24

申请号：US10189129

申请日：2002-07-02

Applicant: Richard E. Smalley ,  Rajesh Kumar Saini ,  Ramesh Sivarajan ,  Robert H. Hauge ,  Virginia Angelica Davis ,  Matteo Pasquali ,  Lars Martin Ericson

Inventor： Richard E. Smalley ,  Rajesh Kumar Saini ,  Ramesh Sivarajan ,  Robert H. Hauge ,  Virginia Angelica Davis ,  Matteo Pasquali ,  Lars Martin Ericson

IPC: D01F9/12

CPC classification number: B82Y15/00 ,  D01F11/12 ,  Y10S977/842

Abstract: The present invention involves fibers of highly aligned single-wall carbon nanotubes and a process for making the same. The present invention provides a method for effectively dispersing single-wall carbon nanotubes. The process for dispersing the single-wall carbon nanotubes comprises mixing single-wall carbon nanotubes with 100% sulfuric acid or a superacid, heating and stirring under an inert, oxygen-free environment. The single-wall carbon nanotube/acid mixture is wet spun into a coagulant to form the single-wall carbon nanotube fibers. The fibers are recovered, washed and dried. The single-wall carbon nanotubes were highly aligned in the fibers, as determined by Raman spectroscopy analysis.

公开(公告)号：US20060233741A1

公开(公告)日：2006-10-19

申请号：US11389564

申请日：2006-03-24

Applicant: Rajesh Kumar ,  Ashok Cholli

Inventor： Rajesh Kumar ,  Ashok Cholli

IPC: A61K31/785 ,  C08G65/14

CPC classification number: C07C235/38 ,  C07C239/16 ,  C08G8/08 ,  C08G73/028 ,  C08K5/005 ,  C08K5/20 ,  C09K15/08 ,  C09K15/24 ,  C10L1/224 ,  C10L2230/081

Abstract: Alkylated antioxidant macromolecules are represented by Structural Formula 1: wherein the variables are described herein. Also included are methods of making the molecules and methods of using the molecules as antioxidants.

Abstract translation: 烷基化抗氧化剂大分子由结构式1表示：其中变量在本文中描述。 还包括制备分子的方法和使用分子作为抗氧化剂的方法。

公开(公告)号：US20060189824A1

公开(公告)日：2006-08-24

申请号：US11360020

申请日：2006-02-22

Applicant: Rajesh Kumar ,  Suizhou Yang ,  Vijayendra Kumar ,  Ashok Cholli

Inventor： Rajesh Kumar ,  Suizhou Yang ,  Vijayendra Kumar ,  Ashok Cholli

IPC: C07C215/34

CPC classification number: C07C213/02 ,  C07C215/50 ,  C07C229/38 ,  C08K5/005 ,  C10M133/14 ,  C10M149/22 ,  C10M159/12 ,  C10M177/00 ,  C10M2207/026 ,  C10M2207/08 ,  C10M2215/04 ,  C10M2215/06 ,  C10M2215/066 ,  C10N2230/10 ,  C10N2270/00

Abstract: Disclosed are compounds represented by structural formula (I): methods of producing compounds represented by structural formula (I) and their use in inhibiting oxidation in an oxidizable material.

Abstract translation: 公开了由结构式（I）表示的化合物：由结构式（I）表示的化合物的制备方法及其在可氧化材料中的抑制氧化的用途。

公开(公告)号：US07085279B1

公开(公告)日：2006-08-01

申请号：US09752075

申请日：2000-12-29

Applicant: Rajesh Kumar ,  Snehal Karia

Inventor： Rajesh Kumar ,  Snehal Karia

IPC: H04L12/56

CPC classification number: H04L12/5601 ,  H04L2012/563 ,  H04L2012/5671 ,  H04M7/063

Abstract: A method that sends ATM source identification and an ATM-TDM correlation tag from an ATM source gateway to a telephony signaling control network; and then receives at an ATM destination gateway the ATM source identification and the ATM-TDM correlation tag as sent from the telephony signaling control network; and then sends the ATM-TDM correlation tag from the ATM destination gateway to the ATM source gateway to establish a connection between the ATM destination gateway and the ATM source gateway.

Abstract translation: 一种将ATM源标识和ATM-TDM相关标签从ATM源网关发送到电话信令控制网络的方法; 然后在ATM目的地网关处接收从电话信令控制网络发送的ATM源标识和ATM-TDM相关标签; 然后将ATM-TDM相关标签从ATM目的网关发送到ATM源网关，建立ATM目的网关与ATM源网关之间的连接。