公开(公告)号：US10224222B2

公开(公告)日：2019-03-05

申请号：US14481131

申请日：2014-09-09

Applicant: ASM IP Holding B.V.

Inventor： Chris G. M. de Ridder ,  Theodorus G. M. Oosterlaken ,  Klaas P. Boonstra

IPC: H01L21/67 ,  H01L21/683 ,  H01L21/673

Abstract: An assembly of a liner and a support flange for a vertical furnace for processing wafers, wherein the support flange is configured for supporting the liner, at least two support members that are connected to the cylindrical wall, each having a downwardly directed supporting surface, wherein each downwardly directed supporting surface is positioned radially outwardly from the inner cylindrical surface, wherein the support flange and/or the liner are configured such that, when the liner is placed on the support flange, the downwardly directed supporting surfaces are in contact with an upper surface of the support flange and support the liner, and wherein at least the part of the lower end surface of the liner that bounds the inner cylindrical surface is spaced apart from the upper surface of the support flange.

公开(公告)号：US10208379B2

公开(公告)日：2019-02-19

申请号：US15820188

申请日：2017-11-21

Applicant: ASM IP HOLDING B.V.

Inventor： Viljami Pore ,  Timo Hatanpää ,  Mikko Ritala ,  Markku Leskelä

IPC: H01L21/00 ,  C23C16/455 ,  C23C16/30 ,  H01L45/00 ,  C23C16/18 ,  C23C16/44 ,  H01L21/02

Abstract: Atomic layer deposition (ALD) processes for forming Group VA element containing thin films, such as Sb, Sb—Te, Ge—Sb and Ge—Sb—Te thin films are provided, along with related compositions and structures. Sb precursors of the formula Sb(SiR1R2R3)3 are preferably used, wherein R1, R2, and R3 are alkyl groups. As, Bi and P precursors are also described. Methods are also provided for synthesizing these Sb precursors. Methods are also provided for using the Sb thin films in phase change memory devices.

公开(公告)号：US20190051555A1

公开(公告)日：2019-02-14

申请号：US15672096

申请日：2017-08-08

Applicant: ASM IP Holding B.V.

Inventor： Eric Hill ,  John DiSanto

IPC: H01L21/687 ,  H01L21/67 ,  C23C16/458 ,  C30B25/08

CPC classification number: H01L21/68742 ,  C23C16/4581 ,  C23C16/4584 ,  C23C16/4586 ,  C30B25/08 ,  C30B25/12 ,  H01L21/67028 ,  H01L21/67069 ,  H01L21/67126 ,  H01L21/67248 ,  H01L21/68757 ,  H01L21/68792

Abstract: A substrate support assembly suitable for use in a reactor including a common processing and substrate transfer region is disclosed. The substrate support assembly includes a susceptor and one or more lift pins that can be used to lower a substrate onto a surface of the susceptor and raise the substrate from the surface, to allow transfer of the substrate from the processing region, without raising or lowering the susceptor.

公开(公告)号：US20190040529A1

公开(公告)日：2019-02-07

申请号：US16042791

申请日：2018-07-23

Applicant: ASM IP Holding B.V.

Inventor： Melvin Verbaas ,  Jereld Lee Winkler ,  John Kevin Shugrue ,  Carl Louis White

IPC: C23C16/455

Abstract: A showerhead assembly for distributing a gas within a reaction chamber is disclosed. The showerhead assembly may comprise: a chamber formed within the showerhead assembly and a gas distribution assembly adjacent to the chamber, wherein the gas distribution assembly comprises: a first gas distribution plate comprising a top surface and a bottom surface; and a second gas distribution plate comprising a top surface and a bottom surface, the second gas distribution plate being disposed over the top surface of the first gas distribution plate. The gas distribution assembly may further comprise: one or more heating structures disposed between the first gas distribution plate and the second gas distribution plate; and a plurality of apertures extending from the bottom surface of the first distribution plate to the top surface of the second gas distribution plate. Methods for controlling the temperature uniformity of a showerhead assembly utilized for distribution gas with a reaction chamber are also disclosed.

公开(公告)号：US10199234B2

公开(公告)日：2019-02-05

申请号：US15458599

申请日：2017-03-14

Applicant: ASM IP Holding B.V.

Inventor： Jacob Huffman Woodruff

IPC: H01L21/285 ,  H01L21/768 ,  H01L21/3205 ,  H01L29/66 ,  H01L29/78

Abstract: A method of forming a metal silicide can include depositing an interface layer on exposed silicon regions of a substrate, where the interface layer includes a silicide forming metal and a non-silicide forming element. The method can include depositing a metal oxide layer over the interface layer, where the metal oxide layer includes a second silicide forming metal. The substrate can be subsequently heated to form the metal silicide beneath the interface layer, using silicon from the exposed silicon regions, the first silicide forming metal of the interface layer and the second silicide forming metal of the metal oxide layer.

公开(公告)号：US20190027584A1

公开(公告)日：2019-01-24

申请号：US16000156

申请日：2018-06-05

Applicant: ASM IP Holding B.V.

Inventor： Joe Margetis ,  John Tolle

IPC: H01L29/66 ,  H01L29/78 ,  H01L29/165 ,  H01L29/167 ,  H01L29/08 ,  H01L29/45 ,  H01L23/535 ,  H01L21/02 ,  H01L21/285

Abstract: A method for selectively depositing a Group IV semiconductor on a surface of a substrate is disclosed. The method may include, providing a substrate within a reaction chamber and heating the substrate to a deposition temperature. The method may further include, exposing the substrate to at least one Group IV precursor, and exposing the substrate to at least one Group IIIA halide dopant precursor. Semiconductor device structures including a Group IV semiconductor deposited by the methods of the disclosure are also provided.

公开(公告)号：US20190019674A1

公开(公告)日：2019-01-17

申请号：US16033485

申请日：2018-07-12

Applicant: ASM IP HOLDING B.V.

Inventor： Elina Färm

IPC: H01L21/02

Abstract: The present application discloses forming self-assembled monolayers (SAMs) by exposing the substrate at least twice to SAM precursors with intervening cooling of a substrate.

公开(公告)号：US10179947B2

公开(公告)日：2019-01-15

申请号：US14090750

申请日：2013-11-26

Applicant: ASM IP Holding B.V.

Inventor： Atsuki Fukazawa

IPC: H05H1/00 ,  C23C16/34 ,  C23C16/455

Abstract: A method for forming a film on a patterned surface of a substrate by atomic layer deposition (ALD) processing includes: adsorbing onto a patterned surface a first precursor containing silicon or metal in its molecule; adsorbing onto the first-precursor-adsorbed surface a second precursor containing no silicon or metal in its molecule; exposing the second-precursor-adsorbed surface to an excited reactant to oxidize, nitride, or carbonize the precursors adsorbed on the surface of the substrate; and repeating the above cycle to form a film on the patterned surface of the substrate.

公开(公告)号：US20180363139A1

公开(公告)日：2018-12-20

申请号：US15962980

申请日：2018-04-25

Applicant: ASM IP Holding B.V.

Inventor： Shiva Rajavelu ,  John Tolle ,  Rich McCartney

IPC: C23C16/46 ,  C23C16/458

Abstract: A semiconductor processing apparatus is disclosed. The semiconductor processing apparatus may include: a reaction chamber comprising an upper chamber wall and a lower chamber wall connected by vertical sidewalls, the chamber walls being joined by an upstream inlet flange and a downstream outlet flange wherein a longitudinal direction of the chamber extends from the inlet flange to the outlet flange and a plurality of ribs provided on an outer surface of at least the upper chamber wall, the plurality of ribs being orientated transversely to the longitudinal direction of the chamber. The semiconductor processing apparatus may also include at least one array of heating elements disposed above the reaction chamber and at least one variable positioning device coupled to the at least one array of heating elements and configured to controllably adjust the position of the at least one array of heating elements relative to the position of the plurality of ribs. Methods of calibrating a semiconductor processing apparatus are also disclosed.

公开(公告)号：US20180350623A1

公开(公告)日：2018-12-06

申请号：US15994236

申请日：2018-05-31

Applicant: ASM IP Holding B.V.

Inventor： Dieter Pierreux ,  Werner Knaepen ,  Bert Jongbloed

IPC: H01L21/3213 ,  H01L21/306 ,  C23F1/16

Abstract: The disclosure relates generally to the field of processing substrates, for example comprising materials such as quartz, glass or silicon. The disclosure more particular relates to providing wet etch protection layers comprising boron and carbon and etching the substrate in a hydrogen fluoride aqueous solution. One or more of the boron and carbon containing films can have a thickness of at least 5, preferably 10 and, more preferably 30 nm. The method comprises wet etching the substrate in a hydrofluoric acid solution with a hydrogen fluoride concentration of at least 10 wt. % for at least 5 minutes.