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公开(公告)号：US11133242B2
公开(公告)日：2021-09-28
申请号：US17015619
申请日：2020-09-09
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Michele Derai , Federico Giovanni Ziglioli
IPC: H01L23/495 , H01L23/31 , H01L23/00 , H01L21/56
Abstract: A method of manufacturing semiconductor devices such as integrated circuits comprises: providing one or more semiconductor chips having first and second opposed surfaces, coupling the semiconductor chip or chips with a support substrate with the second surface towards the support substrate, embedding the semiconductor chip or chips coupled with the support substrate in electrically-insulating packaging material by providing in the packaging material electrically-conductive passageways. The electrically-conductive passageways comprise: electrically-conductive chip passageways towards the first surface of the at least one semiconductor chip, and/or electrically-conductive substrate passageways towards the support substrate.
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公开(公告)号：US11133064B2
公开(公告)日：2021-09-28
申请号：US16931335
申请日：2020-07-16
Applicant: STMicroelectronics S.r.l.
Inventor： Marcella Carissimi , Laura Capecchi , Marco Pasotti , Fabio Enrico Carlo Disegni
Abstract: A sense amplifier and a method for accessing a memory device are disclosed. In an embodiment a sense amplifier for a memory device includes a first input node selectively coupled to a first memory cell through a first local bitline and a first main bitline, a second input node selectively coupled through a second local bitline and a second main bitline to a second memory cell or to a reference generator configured to generate a reference current, a first current generator controllable so as to inject a first variable current into the first input node, a second current generator controllable so as to inject a second variable current into the second input node, a first branch coupled to the first input node and comprising a first switch circuit, a first sense transistor and a first forcing transistor and a second branch coupled to the second input node and including a second switch circuit, a second sense transistor and a second forcing transistor.
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383.发明授权公开(公告)号：US11123878B2
公开(公告)日：2021-09-21
申请号：US16265650
申请日：2019-02-01
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Domenico Giusti , Lorenzo Tentori
Abstract: A MEMS manipulation device has first and second manipulation arms carrying respective mutually facing gripping elements. At least the first manipulation arm is formed by a driving arm and by an articulated arm hinged together through an articulation structure. The first driving arm includes a first beam element and a first piezoelectric region on the first beam element. The first articulation structure includes a first connecting element not deformable in the thickness direction, as well as a first hinge structure interposed between the first driving arm, the first articulated arm, and the first connecting element.
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公开(公告)号：US11116427B2
公开(公告)日：2021-09-14
申请号：US16259254
申请日：2019-01-28
Applicant: STMicroelectronics S.r.l.
Inventor： Stefano Rossi
Abstract: A device for monitoring breathing activity of, e.g., athletes while exercising includes a breathing activity sensor configured to be worn by a wearer and to provide a breathing activity signal indicative of the breathing activity of the wearer. A motion sensor is configured to be worn by the wearer and to provide a motion signal indicative of the motion activity of the wearer. A processing arrangement is coupled to the breathing activity sensor to process the breathing activity signal and produce a processed breathing activity signal. The processing arrangement includes filter circuitry having a first filtering bandwidth and a second filtering bandwidth. The first filtering bandwidth is larger than the second filtering bandwidth. The filter circuitry is coupled to the motion sensor and operates with one of the first filtering bandwidth and the second filtering bandwidth selected as a function of the motion signal from the motion sensor.
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385.发明申请公开(公告)号：US20210280424A1
公开(公告)日：2021-09-09
申请号：US17190722
申请日：2021-03-03
Applicant: STMicroelectronics S.r.l.
Inventor： Simone RASCUNA' , Paolo BADALA' , Anna BASSI , Mario Giuseppe SAGGIO , Giovanni FRANCO
Abstract: A method for manufacturing an electronic device based on SiC includes forming a structural layer of SiC on a front side of a substrate. The substrate has a back side that is opposite to the front side along a direction. Active regions of the electronic device are formed in the structure layer, and the active regions are configured to generate or conduct electric current during the use of the electronic device. A first electric terminal is formed on the structure layer, and an intermediate layer is formed at the back side of the substrate. The intermediate layer is heated by a LASER beam in order to generate local heating such as to favor the formation of an ohmic contact of Titanium compounds. A second electric terminal of the electronic device is formed on the intermediate layer.
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Patent Agency Ranking
公开(公告)号：US20210276044A1
公开(公告)日：2021-09-09
申请号：US17191475
申请日：2021-03-03
Applicant: STMicroelectronics S.r.l.
Inventor： Federico VERCESI , Alessandro DANEI , Giorgio ALLEGATO , Gabriele GATTERE , Roberto CAMPEDELLI
Abstract: A method for manufacturing a PMUT device including a piezoelectric element located at a membrane element is provided. The method includes receiving a silicon on insulator substrate having a first silicon layer, an oxide layer, and a second silicon layer. Portions of a first surface of the second silicon layer are exposed by removing exposed side portions of the first silicon layer and corresponding portions of the oxide layer, and a central portion including the remaining portions of the first silicon layer and of the oxide layer is defined. Anchor portions for the membrane element are formed at the exposed portions of the first surface of the second silicon layer. The piezoelectric element is formed above the central portion, and the membrane element is defined by selectively removing the second layer and removing the remaining portion of the oxide from under the remaining portion of the first silicon layer.
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公开(公告)号：US11112268B2
公开(公告)日：2021-09-07
申请号：US15688152
申请日：2017-08-28
Applicant: STMicroelectronics S.r.l.
Inventor： Marco Leo , Alessia Cagidiaco , Marco Catellano
Abstract: Disclosed herein is a method including receiving multi-axis accelerometer data representing a potential step taken by a user of an electronic device. The method also includes determining whether the potential step represented by the multi-axis accelerometer data is a false. This determination is made by calculating statistical data from the multi-axis accelerometer data, and applying a decision tree to the statistical data to perform a cross correlation that determines whether the potential step is a false positive. If the potential step is not a false positive, a step detection process is performed to determine whether the potential step is a countable step and, if the potential step is found to be a countable step, a step counter is incremented.
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公开(公告)号：US20210270699A1
公开(公告)日：2021-09-02
申请号：US17318831
申请日：2021-05-12
Applicant: STMicroelectronics S.r.l.
Inventor： Marco Piazza , Antonio Canciamilla , Piero Orlandi , Luca Maggi
IPC: G01M11/00 , G02B6/293 , G01M11/02 , G01R31/3185 , G01R31/317
Abstract: A method of testing a photonic device includes providing a plurality of optical test signals at respective inputs of a first plurality of inputs of an optical input circuit located on a substrate, combining the plurality of optical test signals into a combined optical test signal at an output of the optical input circuit, transmitting the combined optical test signal through the output to an input waveguide of an optical device under test, the optical device under test being located on the substrate, and measuring a response of the optical device under test to the combined optical test signal. Each of the plurality of optical test signals comprises a respective dominant wavelength of a plurality of dominant wavelengths.
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公开(公告)号：US11105836B2
公开(公告)日：2021-08-31
申请号：US16746444
申请日：2020-01-17
Inventor： Dino Costanzo , Cheng Pan Cai , Xi Yu Xu
IPC: G01R19/25 , H02P27/08 , H02M1/00 , G01R15/14 , H02M7/5387
Abstract: A three-phase load is powered by a PWM (e.g., SVPWM) driven DC-AC inverter having a single shunt-topology. A shunt voltage and a branch voltage of the inverter (across a transistor to be calibrated) are measured during a second period of each SVPWM sector, and the drain-to-source resistance of the calibrated transistor is calculated. During the fourth period of each SVPWM sector, the branch voltage is measured again, and another branch voltage across another transistor is measured. Using the drain-to-source resistance of the calibrated transistor and the voltage across the calibrated transistor measured during the fourth period, the phase current through the calibrated transistor is calculated. Using the other branch voltage measured during the fourth period and the drain-to-source resistance of its corresponding transistor (known from a prior SVPWM sector), the phase current through that transistor is calculated. From the two calculated phase currents, the other phase current can be calculated.
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公开(公告)号：US20210261403A1
公开(公告)日：2021-08-26
申请号：US17179157
申请日：2021-02-18
Applicant: STMicroelectronics S.r.l.
Inventor： Gabriele GATTERE , Francesco RIZZINI
Abstract: A MEMS inclinometer includes a substrate, a first mobile mass and a sensing unit. The sensing unit includes a second mobile mass, a number of elastic elements, which are interposed between the second mobile mass and the substrate and are compliant in a direction parallel to a first axis, and a number of elastic structures, each of which is interposed between the first and second mobile masses and is compliant in a direction parallel to the first axis and to a second axis. The sensing unit further includes a fixed electrode that is fixed with respect to the substrate and a mobile electrode fixed with respect to the second mobile mass, which form a variable capacitor.
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