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    Semiconductor device and corresponding method
    4.
    发明授权
    Semiconductor device and corresponding method 有权

    公开(公告)号：US11152289B2

    公开(公告)日：2021-10-19

    申请号：US16406911

    申请日：2019-05-08

    Applicant: STMICROELECTRONICS S.R.L.

    Inventor： Fulvio Vittorio Fontana ,  Giovanni Graziosi ,  Michele Derai

    IPC: H01L23/495 ,  H01L23/00 ,  H01L21/48

    Abstract: A semiconductor device comprises: a lead-frame comprising a die pad having at least one electrically conductive die pad area an insulating layer applied onto the electrically conductive die pad area. An electrically conductive layer is applied onto the insulating layer with one or more semiconductor dice coupled, for instance adhesively, to the electrically conductive layer. The electrically conductive die pad area, the electrically conductive layer and the insulating layer sandwiched therebetween form at least one capacitor integrated in the device. The electrically conductive die pad area comprises a sculptured structure with valleys and peaks therein; the electrically conductive layer comprises electrically conductive filling material extending into the valleys in the sculptured structure of the electrically conductive die pad area.

    Enhanced thermal dissipation in flip-chip semiconductor devices using laser direct structuring (LDS) technology
    5.
    发明授权
    Enhanced thermal dissipation in flip-chip semiconductor devices using laser direct structuring (LDS) technology 有权

    公开(公告)号：US12211763B2

    公开(公告)日：2025-01-28

    申请号：US17549058

    申请日：2021-12-13

    Applicant: STMicroelectronics S.r.l.

    Inventor： Michele Derai ,  Dario Vitello

    IPC: H01L23/29 ,  H01L21/48 ,  H01L23/31 ,  H01L23/495

    Abstract: A method of manufacturing semiconductor devices, such as QFN/BGA flip-chip type packages, arranging on a leadframe one or more semiconductor chips or dice having a first side facing towards the leadframe and electrically coupled therewith and a second side facing away from the leadframe. The method also includes molding an encapsulation on the semiconductor chip(s) arranged on the leadframe, where the encapsulation has an outer surface opposite the leadframe and comprises laser direct structuring (LDS) material. Laser direct structuring processing is applied to the LDS material of the encapsulation to provide metal vias between the outer surface of the encapsulation and the second side of the semiconductor chip(s) and as well as a metal pad at the outer surface of the encapsulation.

    Method of manufacturing semiconductor devices and corresponding semiconductor device
    8.
    发明授权
    Method of manufacturing semiconductor devices and corresponding semiconductor device 有权

    公开(公告)号：US11521861B2

    公开(公告)日：2022-12-06

    申请号：US16994049

    申请日：2020-08-14

    Applicant: STMicroelectronics S.r.l.

    Inventor： Michele Derai ,  Giovanni Graziosi

    IPC: H01L21/48 ,  H01L21/56 ,  H01L21/78 ,  H01L23/31 ,  H01L23/495

    Abstract: Semiconductor dice are arranged on a substrate such as a leadframe. Each semiconductor die is provided with electrically-conductive protrusions (such as electroplated pillars or bumps) protruding from the semiconductor die opposite the substrate. Laser direct structuring material is molded onto the substrate to cover the semiconductor dice arranged thereon, with the molding operation leaving a distal end of the electrically-conductive protrusion to be optically detectable at the surface of the laser direct structuring material. Laser beam processing the laser direct structuring material is then performed with laser beam energy applied at positions of the surface of the laser direct structuring material which are located by using the electrically-conductive protrusions optically detectable at the surface of the laser direct structuring material as a spatial reference.

    Method of manufacturing semiconductor devices and corresponding semiconductor device
    9.
    发明授权
    Method of manufacturing semiconductor devices and corresponding semiconductor device 有权

    公开(公告)号：US12165880B2

    公开(公告)日：2024-12-10

    申请号：US17550747

    申请日：2021-12-14

    Applicant: STMicroelectronics S.r.l.

    Inventor： Fulvio Vittorio Fontana ,  Michele Derai

    IPC: H01L21/48 ,  H01L21/78 ,  H01L23/495

    Abstract: A semiconductor chip is mounted at a first surface of a leadframe and an insulating encapsulation is formed onto the leadframe. An etching mask is applied to a second surface of the leadframe to cover locations of two adjacent rows of electrical contacts as well as a connecting bar between the two adjacent rows which electrically couples the electrical contacts. The second surface is then etched through the etching mask to remove leadframe material at the second surface and define the electrical contacts and connecting bar. The electrical contacts include a distal surface as well as flanks left uncovered by the insulating encapsulation. The etching mask is then removed and the electrical contacts and the connecting bars are used as electrodes in an electroplating of the distal surface and the flanks of the electrical contacts. The connecting bar is then removed from between the two adjacent rows during device singulation.

    Method of manufacturing semiconductor devices and corresponding device
    10.
    发明授权
    Method of manufacturing semiconductor devices and corresponding device 有权

    公开(公告)号：US11901250B2

    公开(公告)日：2024-02-13

    申请号：US17411585

    申请日：2021-08-25

    Applicant: STMicroelectronics S.r.l.

    Inventor： Pierangelo Magni ,  Michele Derai

    IPC: H01L23/495 ,  H01L23/31 ,  H01L21/56 ,  H01L23/18 ,  H01L23/498

    CPC classification number: H01L23/3107 ,  H01L21/561 ,  H01L23/18 ,  H01L23/49838

    Abstract: A semiconductor chip or die is mounted at a position on a support substrate. A light-permeable laser direct structuring (LDS) material is then molded onto the semiconductor chip positioned on the support substrate. The semiconductor chip is visible through the LDS material. Laser beam energy is directed to selected spatial locations of the LDS material to structure in the LDS material a pat gstern of structured formations corresponding to the locations of conductive lines and vias for making electrical connection to the semiconductor chip. The spatial locations of the LDS material to which laser beam energy is directed are selected as a function of the position the semiconductor chip which is visible through the LDS material, thus countering undesired effects of positioning offset of the chip on the substrate.

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