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60 条记录 (耗时 0.023 秒)

    NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS
    33.
    发明申请
    NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS 有权
    负极组合物和图案过程

    公开(公告)号：US20110129765A1

    公开(公告)日：2011-06-02

    申请号：US12902868

    申请日：2010-10-12

    申请人： Akinobu TANAKA ,  Keiichi MASUNAGA ,  Daisuke DOMON ,  Satoshi WATANABE

    发明人： Akinobu TANAKA ,  Keiichi MASUNAGA ,  Daisuke DOMON ,  Satoshi WATANABE

    IPC分类号： G03F1/00 ,  G03F7/004 ,  G03F7/20

    CPC分类号： G03F7/0382 ,  G03F7/0045

    摘要： There is disclosed a negative resist composition wherein a base resin contains at least repeating units represented by the following general formula (1) and general formula (2) and has a weight average molecular weight of 1,000 to 10,000, and the compound containing a nitrogen atom as a basic component contains one or more kinds of amine compounds having a carboxyl group and not having a hydrogen atom covalently bonded to a base-center nitrogen atom. There can be a negative resist composition in which a bridge hardly occurs, substrate dependence is low and a pattern with a high sensitivity and a high resolution can be formed, and a patterning process using the same.

    摘要翻译： 公开了一种负型抗蚀剂组合物，其中基础树脂至少含有由以下通式（1）和通式（2）表示的重复单元，其重均分子量为1,000至10,000，并且含有氮原子的化合物 碱性组分含有一种或多种具有羧基并且不具有与碱中心氮原子共价键合的氢原子的胺化合物。 可以存在几乎不发生桥的负的抗蚀剂组合物，衬底依赖性低，并且可以形成具有高灵敏度和高分辨率的图案，以及使用其的图案化处理。

    Sulfonium salts and chemically amplified positive resist compositions
    35.
    发明授权
    Sulfonium salts and chemically amplified positive resist compositions 失效
    锍盐和化学增幅阳性抗蚀剂组合物

    公开(公告)号：US5880169A

    公开(公告)日：1999-03-09

    申请号：US742324

    申请日：1996-11-01

    申请人： Yoichi Osawa ,  Satoshi Watanabe ,  Katsuya Takemura ,  Shigehiro Nagura ,  Akinobu Tanaka ,  Yoshio Kawai

    发明人： Yoichi Osawa ,  Satoshi Watanabe ,  Katsuya Takemura ,  Shigehiro Nagura ,  Akinobu Tanaka ,  Yoshio Kawai

    IPC分类号： G03F7/004 ,  G03F7/039 ,  G03F7/038

    CPC分类号： G03F7/0045

    摘要： The invention provides a novel sulfonium salt having at least one acid labile group attached to a phenyl group in a molecule and a normal, branched or cyclic C.sub.1 -C.sub.20 alkylsulfonate anion. The novel sulfonium salt is effective for increasing the dissolution contrast between exposed and unexposed areas. Upon exposure, it generates an alkylsulfonic acid which is a weak acid, minimizing the influence of side reaction and deactivation during PEB step. The sulfonium salt is useful in a chemically amplified positive resist composition which lends itself to fine patterning and features high resolution.

    摘要翻译： 本发明提供了一种新的锍盐，其具有至少一个与分子中的苯基连接的酸不稳定基团以及正，支链或环状的C 1 -C 20烷基磺酸根阴离子。 新型锍盐对于增加曝光和未曝光区域之间的溶解度对比是有效的。 暴露后，产生弱酸的烷基磺酸，使PEB步骤中副反应和失活的影响最小化。 锍盐可用于化学放大的正性抗蚀剂组合物，其具有精细的图案化并具有高分辨率。

    Positive resist material
    38.
    发明授权
    Positive resist material 失效
    正抗蚀剂材料

    公开(公告)号：US5356753A

    公开(公告)日：1994-10-18

    申请号：US973398

    申请日：1992-11-12

    申请人： Motoyuki Yamada ,  Osamu Watanabe ,  Akinobu Tanaka ,  Hiroshi Ban ,  Yoshio Kawai

    发明人： Motoyuki Yamada ,  Osamu Watanabe ,  Akinobu Tanaka ,  Hiroshi Ban ,  Yoshio Kawai

    IPC分类号： G03F7/004 ,  G03F7/029 ,  G03F7/039 ,  H01L21/027 ,  G03C1/492

    CPC分类号： G03F7/0045 ,  Y10S430/106 ,  Y10S430/115 ,  Y10S430/122 ,  Y10S430/126

    摘要： A positive resists material for high energy-sensitive positive resists which can be developed in aqueous alkali solution, said material comprising (A) a polyhydroxystyrene resin wherein some hydroxyl groups are substituted by t-butoxycarbonyloxy groups, (B) a solution blocking agent, and (C) an onium salt, and being characterized in that said solution blocking agent contains at least one t-butoxycarbonyloxy group per molecule, said onium salt is bis(p-t-butylphenyl) iodinium trifluormethylsulfonate represented by the following formula (1): ##STR1## and the weight proportions of (A), (B), (C) are given by the relations: 0.07.ltoreq.B-.ltoreq.0.40, 0.005.ltoreq.C.ltoreq.0.15, 0.55.ltoreq.A, A+B+C=1. As the resist has low absorption at the exposure wavelength of a KrF exima laser, a fine pattern having vertical walls is easily formed.

    摘要翻译： 所述材料包含（A）一些羟基被叔丁氧羰基氧基取代的多羟基苯乙烯树脂，（B）溶液阻挡剂，和 （C）鎓盐，其特征在于，所述溶液阻断剂每分子含有至少一个叔丁氧基羰基氧基，所述鎓盐是由下式（1）表示的双（对叔丁基苯基）碘鎓三氟甲磺酸盐：

    Positive resist composition and pattern forming process
    40.
    发明授权
    Positive resist composition and pattern forming process 有权
    正抗蚀剂组成和图案形成工艺

    公开(公告)号：US08389201B2

    公开(公告)日：2013-03-05

    申请号：US12786013

    申请日：2010-05-24

    申请人： Akinobu Tanaka ,  Keiichi Masunaga ,  Daisuke Domon ,  Satoshi Watanabe

    发明人： Akinobu Tanaka ,  Keiichi Masunaga ,  Daisuke Domon ,  Satoshi Watanabe

    IPC分类号： G03F7/039 ,  G03F7/20 ,  G03F7/30

    CPC分类号： G03F7/0395 ,  G03F7/0397

    摘要： The present invention relates to a positive resist composition and to a pattern forming process using the same. The present invention provides: a positive resist composition having an enhanced etching resistance and an excellent resolution and being capable of providing an excellent pattern profile even at a substrate-side boundary face of resist, in photolithography for fine processing, and particularly in lithography adopting, as an exposure source, KrF laser, extreme ultraviolet rays, electron beam, X-rays, or the like; and a pattern forming process utilizing the positive resist composition.

    摘要翻译： 本发明涉及正性抗蚀剂组合物和使用其的图案形成方法。 本发明提供：具有增强的抗蚀刻性和优异分辨率的正型抗蚀剂组合物，并且即使在抗蚀剂的基板侧边界面，也能够在光刻中进行精细加工，并且特别是在光刻中， 作为曝光源，KrF激光，极紫外线，电子束，X射线等; 以及利用正性抗蚀剂组合物的图案形成工艺。