公开(公告)号：US20110014775A1

公开(公告)日：2011-01-20

申请号：US12922569

申请日：2009-10-29

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Kouichi Tanaka ,  Yuji Tobisaka ,  Yoshihiro Nojima

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Kouichi Tanaka ,  Yuji Tobisaka ,  Yoshihiro Nojima

IPC分类号： H01L21/304

CPC分类号： H01L21/76254 ,  H01L21/76256

摘要： [PROBLEM] Provided is a method for producing an SOI wafer which the method can prevent occurrence of thermal strain, detachment, crack and the like attributed to a difference in thermal expansion coefficients between the insulating substrate and the SOI layer and also improve the uniformity of film thickness of the SOI layer.[MEANS FOR SOLVING THE PROBLEM] Provided is a method for producing an SOI wafer comprising steps of: performing a surface activation treatment on at least one of a surface of an insulator wafer and a hydrogen ion-implanted surface of a single crystal silicon wafer having a hydrogen ion-implanted layer; bonding the hydrogen ion-implanted surface to the surface of the insulator wafer to obtain bonded wafers; heating the bonded wafers at a first temperature; grinding and/or etching a surface of a single crystal silicon wafer side of the bonded wafers thus heated so as to thin the single crystal silicon wafer of the bonded wafers; heating the bonded wafers thus ground and/or etched at a second temperature which is higher the first temperature; and performing detachment at the hydrogen ion-implanted layer by applying a mechanical impact to the hydrogen ion-implanted layer of the bonded wafers thus heated at the second temperature.

摘要翻译： [问题]提供一种用于制造SOI晶片的方法，该方法可以防止由于绝缘基板和SOI层之间的热膨胀系数的差异而引起的热应变，剥离，裂纹等的发生，并且还提高了 SOI层的膜厚度。 解决问题的手段提供一种SOI晶片的制造方法，包括以下步骤：对绝缘体晶片的表面和具有单晶硅晶片的氢离子注入表面中的至少一个进行表面活化处理，所述单晶硅晶片具有 氢离子注入层; 将氢离子注入表面接合到绝缘体晶片的表面以获得接合晶片; 在第一温度下加热接合的晶片; 研磨和/或蚀刻如此加热的接合晶片的单晶硅晶片侧的表面，以使结合晶片的单晶硅晶片变薄; 加热接合的晶片，从而在第一温度较高的第二温度下进行研磨和/或蚀刻; 并且通过对在第二温度下加热的接合晶片的氢离子注入层施加机械冲击，在氢离子注入层处进行脱离。

公开(公告)号：US20110003460A1

公开(公告)日：2011-01-06

申请号：US12864582

申请日：2009-02-12

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Kouichi Tanaka ,  Makoto Kawai ,  Yuji Tobisaka ,  Hiroshi Tamura

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Kouichi Tanaka ,  Makoto Kawai ,  Yuji Tobisaka ,  Hiroshi Tamura

IPC分类号： H01L21/02

CPC分类号： H01L29/78603 ,  H01L21/3065 ,  H01L21/3247 ,  H01L21/76254

摘要： A method for minimizing thickness variation of a substrate in an anneal step and achieving the smoothing of the surface of the substrate. Specifically provided is a method for treating the surface of a SOI substrate, including the steps of treating the surface of the SOI substrate by the PACE method using a plasma or the GCIB method using a gas cluster ion beam and subjecting the treated substrate to a heat treatment in argon atmosphere or an inert gas atmosphere containing 4 vol % or less of hydrogen so that the treated SOI substrate can be annealed.

摘要翻译： 一种在退火步骤中最小化衬底的厚度变化并实现衬底表面的平滑化的方法。 具体提供的是用于处理SOI衬底的表面的方法，包括以下步骤：使用等离子体的PACE法或使用气体簇离子束的GCIB方法处理SOI衬底的表面，并使经处理的衬底经受热 在氩气氛中或含有4体积％以下的氢气的惰性气体气氛中进行处理，以使被处理的SOI衬底能够退火。

公开(公告)号：US07833878B2

公开(公告)日：2010-11-16

申请号：US12162134

申请日：2007-02-08

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Yuuji Tobisaka ,  Koichi Tanaka

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Yuuji Tobisaka ,  Koichi Tanaka

IPC分类号： H01L21/30

CPC分类号： H01L21/76254

摘要： A hydrogen ion-implanted layer is formed on the surface side of a first substrate which is a single-crystal silicon substrate. At least one of the surface of a second substrate, which is a transparent insulating substrate, and the surface of the first substrate is subjected to surface activation treatment, and the two substrates are bonded together. The bonded substrate composed of the single-crystal Si substrate and the transparent insulating substrate thus obtained is mounted on a susceptor and is placed under an infrared lamp. Light having a wave number range including an Si—H bond absorption band is irradiated at the bonded substrate for a predetermined length of time to break the Si—H bonds localized within a “microbubble layer” in the hydrogen ion-implanted layer, thereby separating a silicon thin film layer.

摘要翻译： 在作为单晶硅衬底的第一衬底的表面侧上形成氢离子注入层。 作为透明绝缘基板的第二基板的表面和第一基板的表面中的至少一个进行表面活化处理，并且将两个基板接合在一起。 将由单晶Si衬底和由此获得的透明绝缘衬底构成的键合衬底安装在基座上并放置在红外灯下。 在键合衬底上照射具有Si-H键吸收带的波数范围的光，以预定的时间长度，以破坏位于氢离子注入层中的“微泡层”内的Si-H键，从而分离 硅薄膜层。

公开(公告)号：US07799589B2

公开(公告)日：2010-09-21

申请号：US12076617

申请日：2008-03-20

申请人： Shoji Akiyama ,  Yoshihiro Kuboto ,  Atsuo Ito ,  Koichi Tanaka ,  Yuuji Tobisaka ,  Makoto Kawai

发明人： Shoji Akiyama ,  Yoshihiro Kuboto ,  Atsuo Ito ,  Koichi Tanaka ,  Yuuji Tobisaka ,  Makoto Kawai

IPC分类号： H01L21/00

CPC分类号： G02B6/132 ,  G02B6/1347 ,  G02F1/0126 ,  G02F1/025 ,  G02F2202/105 ,  G02F2203/48 ,  Y10S438/967

摘要： An optical waveguide apparatus having a very simple structure that can modulate a signal light guided through an optical waveguide is provided. A photoresist 13 is applied to an upper side of an SOI film 12, a photoresist mask 14 is formed, and the SOI film in a region that is not covered with the photoresist mask 14 is removed by etching to obtain an optical waveguide 15 having a single-crystal silicon core. Further, a light emitting device capable of irradiating the single-crystal silicon core with a light having a wavelength of 1.1 μm or below is provided on a back surface side of a quartz substrate 20 to provide an optical waveguide apparatus. When the light emitting device 30 does not apply a light, the light guided through the optical waveguide 15 is guided as it is. However, when the light emitting device 30 applies a light to form each pair of an electron and a hole in the irradiated region 16, the light guided through the optical waveguide 15 is absorbed by the pair of an electron and a hole, thereby enabling switching (modulation) for turning ON/OFF an optical signal depending on presence/absence (ON or OFF) of application of the light from the light emitting device 30.

摘要翻译： 提供一种具有可以调制通过光波导引导的信号光的非常简单结构的光波导装置。 将光致抗蚀剂13施加到SOI膜12的上侧，形成光致抗蚀剂掩模14，并且通过蚀刻除去未被光致抗蚀剂掩模14覆盖的区域中的SOI膜，以获得具有 单晶硅芯。 此外，在石英基板20的背面侧设置能够用波长为1.1μm以下的光照射单晶硅芯的发光装置，以提供光波导装置。 当发光器件30不施加光时，通过光波导15引导的光被原样引导。 然而，当发光器件30在照射区域16中施加光以形成每对电子和空穴时，通过光波导15引导的光被一对电子和空穴吸收，从而能够切换 （调制），用于根据来自发光装置30的光的施加的存在/不存在（ON或OFF）来接通/关闭光信号。

公开(公告)号：US20100233866A1

公开(公告)日：2010-09-16

申请号：US12161821

申请日：2007-02-08

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Yuuji Tobisaka ,  Koichi Tanaka

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Yuuji Tobisaka ,  Koichi Tanaka

IPC分类号： H01L21/46 ,  H01L21/44

CPC分类号： H01L21/76254 ,  C30B33/04 ,  H01L21/265

摘要： A nitride-based semiconductor crystal and a second substrate are bonded together. In this state, impact is applied externally to separate the low-dislocation density region of the nitride-based semiconductor crystal along the hydrogen ion-implanted layer, thereby transferring (peeling off) the surface layer part of the low-dislocation density region onto the second substrate. At this time, the lower layer part of the low-dislocation density region stays on the first substrate without being transferred onto the second substrate. The second substrate onto which the surface layer part of the low-dislocation density region has been transferred is defined as a semiconductor substrate available by the manufacturing method of the present invention, and the first substrate on which the lower layer part of the low-dislocation density region stays is reused as a substrate for epitaxial growth.

摘要翻译： 氮化物类半导体晶体和第二基板结合在一起。 在这种状态下，外部施加冲击以沿着氢离子注入层分离氮化物基半导体晶体的低位错密度区域，从而将低位错密度区域的表面层部分转移（剥离）到 第二基板。 此时，低位错密度区域的下层部分停留在第一基板上，而不会转移到第二基板上。 将低位错密度区域的表面层部分转印到其上的第二基板被定义为可通过本发明的制造方法获得的半导体基板，并且第一基板在其上具有低位错层的下层部分 密度区域残留被重新用作外延生长的衬底。

公开(公告)号：US20090246935A1

公开(公告)日：2009-10-01

申请号：US12383834

申请日：2009-03-27

申请人： Makoto Kawai ,  Yoshihiro Kubota ,  Atsuo Ito ,  Kouichi Tanaka ,  Yuji Tobisaka ,  Shoji Akiyama ,  Hiroshi Tamura

发明人： Makoto Kawai ,  Yoshihiro Kubota ,  Atsuo Ito ,  Kouichi Tanaka ,  Yuji Tobisaka ,  Shoji Akiyama ,  Hiroshi Tamura

IPC分类号： H01L21/762

CPC分类号： H01L21/76254 ,  Y10S438/964 ,  Y10S438/967

摘要： Provided is a method for producing an SOI substrate comprising a transparent insulating substrate and a silicon film formed on a first major surface of the insulating substrate wherein a second major surface of the insulating substrate which is opposite to the major surface is roughened, the method suppressing the generation of metal impurities and particles in a simple and easy way. More specifically, provided is a method for producing an SOI substrate comprising a transparent insulating substrate, a silicon film formed on a first major surface of the transparent insulating substrate, and a roughened second major surface, which is opposite to the first major surface, the method comprising steps of: providing the transparent insulating substrate, mirror surface-processing at least the first major surface of the transparent insulating substrate, forming a silicon film on the first major surface of the transparent insulating substrate, and laser-processing the second major surface of the transparent insulating substrate so as to roughen the second major surface by using a laser.

摘要翻译： 提供一种制造SOI基板的方法，该SOI基板包括透明绝缘基板和形成在绝缘基板的第一主表面上的硅膜，其中绝缘基板的与主表面相对的第二主表面被粗糙化，该方法抑制 以简单方便的方式生成金属杂质和颗粒。 更具体地说，提供一种SOI基板的制造方法，其包括透明绝缘基板，形成在透明绝缘基板的第一主表面上的硅膜和与第一主表面相对的粗糙化的第二主表面， 方法包括以下步骤：提供透明绝缘基板，至少透明绝缘基板的第一主表面进行镜面处理，在透明绝缘基板的第一主表面上形成硅膜，并且对第二主表面进行激光加工 的透明绝缘基板，以便通过使用激光使第二主表面粗糙化。

公开(公告)号：US20090057791A1

公开(公告)日：2009-03-05

申请号：US12281886

申请日：2007-03-12

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

IPC分类号： H01L21/762 ,  H01L29/66 ,  H01L29/02

CPC分类号： H01L21/76254 ,  H01L21/84

摘要： A plasma treatment or an ozone treatment is applied to the respective bonding surfaces of the single-crystal Si substrate in which the ion-implanted layer has been formed and the quartz substrate, and the substrates are bonded together. Then, a force of impact is applied to the bonded substrate to peel off a silicon thin film from the bulk portion of single-crystal silicon along the hydrogen ion-implanted layer, thereby obtaining an SOI substrate having an SOI layer on the quartz substrate. A concave portion, such as a hole or a micro-flow passage, is formed on a surface of the quartz substrate of the SOI substrate thus obtained, so that processes required for a DNA chip or a microfluidic chip are applied. A silicon semiconductor element for the analysis/evaluation of a sample attached/held to this concave portion is formed in the SOI layer.

摘要翻译： 对已经形成有离子注入层的单晶Si衬底和石英衬底的各个接合表面施加等离子体处理或臭氧处理，并将衬底接合在一起。 然后，对键合衬底施加冲击力，沿着氢离子注入层从单晶硅的主体部分剥离硅薄膜，从而获得在石英衬底上具有SOI层的SOI衬底。 在如此获得的SOI衬底的石英衬底的表面上形成诸如孔或微流通道的凹部，从而应用DNA芯片或微流体芯片所需的工艺。 在SOI层中形成用于分析/评价附着/保持在该凹部的样品的硅半导体元件。

公开(公告)号：US20090032831A1

公开(公告)日：2009-02-05

申请号：US12076617

申请日：2008-03-20

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Yuuji Tobisaka ,  Makoto Kawai

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Yuuji Tobisaka ,  Makoto Kawai

IPC分类号： H01L33/00

CPC分类号： G02B6/132 ,  G02B6/1347 ,  G02F1/0126 ,  G02F1/025 ,  G02F2202/105 ,  G02F2203/48 ,  Y10S438/967

摘要： An optical waveguide apparatus having a very simple structure that can modulate a signal light guided through an optical waveguide is provided. A photoresist 13 is applied to an upper side of an SOI film 12, a photoresist mask 14 is formed, and the SOI film in a region that is not covered with the photoresist mask 14 is removed by etching to obtain an optical waveguide 15 having a single-crystal silicon core. Further, a light emitting device capable of irradiating the single-crystal silicon core with a light having a wavelength of 1.1 μm or below is provided on a back surface side of a quartz substrate 20 to provide an optical waveguide apparatus. When the light emitting device 30 does not apply a light, the light guided through the optical waveguide 15 is guided as it is. However, when the light emitting device 30 applies a light to form each pair of an electron and a hole in the irradiated region 16, the light guided through the optical waveguide 15 is absorbed by the pair of an electron and a hole, thereby enabling switching (modulation) for turning ON/OFF an optical signal depending on presence/absence (ON or OFF) of application of the light from the light emitting device 30.

摘要翻译： 提供一种具有可以调制通过光波导引导的信号光的非常简单结构的光波导装置。 将光致抗蚀剂13施加到SOI膜12的上侧，形成光致抗蚀剂掩模14，并且通过蚀刻除去未被光致抗蚀剂掩模14覆盖的区域中的SOI膜，以获得具有 单晶硅芯。 此外，在石英基板20的背面侧设置能够用波长为1.1μm以下的光照射单晶硅芯的发光装置，以提供光波导装置。 当发光器件30不施加光时，通过光波导15引导的光被原样引导。 然而，当发光器件30在照射区域16中施加光以形成每对电子和空穴时，通过光波导15引导的光被一对电子和空穴吸收，从而能够切换 （调制），用于根据来自发光装置30的光的施加的存在/不存在（ON或OFF）来接通/关闭光信号。

公开(公告)号：US20090007960A1

公开(公告)日：2009-01-08

申请号：US12073437

申请日：2008-03-05

申请人： Atsuo Ito ,  Shoji Akiyama ,  Makoto Kawai ,  Kouichi Tanaka ,  Yuuji Tobisaka ,  Yoshihiro Kubota

发明人： Atsuo Ito ,  Shoji Akiyama ,  Makoto Kawai ,  Kouichi Tanaka ,  Yuuji Tobisaka ,  Yoshihiro Kubota

IPC分类号： H01L31/00 ,  B32B37/12 ,  H01L21/02

CPC分类号： H01L31/056 ,  H01L21/76254 ,  H01L31/03921 ,  H01L31/0682 ,  H01L31/1804 ,  H01L31/1896 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

摘要： A method for manufacturing a single crystal silicon solar cell includes the steps of implanting either hydrogen ions or rare-gas ions into a single crystal silicon substrate; bringing the single crystal silicon substrate in close contact with a transparent insulator substrate via a transparent adhesive, with the ion-implanted surface being a bonding surface; curing the transparent adhesive; mechanically delaminating the single crystal silicon substrate to form a single crystal silicon layer; forming a plurality of diffusion areas of a second conductivity type in the delaminated surface side of the single crystal silicon layer, and causing a plurality of areas of a first conductivity type and the plurality of areas of the second conductivity type to be present in the delaminated surface of the single crystal silicon layer; forming each of a plurality of individual electrodes on each one of the plurality of areas of the first conductivity type and on each one of the plurality of areas of the second conductivity type in the single crystal silicon layer; forming a collector electrode for the plurality of individual electrodes on the plurality of areas of the first conductivity type, and a collector electrode for the plurality of individual electrodes on the plurality of areas of the second conductivity type; and forming a light-reflecting film.

摘要翻译： 制造单晶硅太阳能电池的方法包括将氢离子或稀土离子注入到单晶硅衬底中的步骤; 使单晶硅衬底通过透明粘合剂与透明绝缘体衬底紧密接触，离子注入表面是接合表面; 固化透明胶; 机械地分层单晶硅衬底以形成单晶硅层; 在单晶硅层的分层表面侧形成多个第二导电类型的扩散区域，并且使多个第一导电类型的区域和第二导电类型的多个区域存在于分层的 单晶硅层表面; 在单晶硅层中形成第一导电类型的多个区域中的每一个区域和第二导电类型的多个区域中的每一个上的多个单独电极中的每一个; 在所述第一导电类型的多个区域上形成用于所述多个单独电极的集电极，以及在所述第二导电类型的多个区域上的所述多个单独电极的集电极; 并形成光反射膜。

公开(公告)号：US20080261381A1

公开(公告)日：2008-10-23

申请号：US12081297

申请日：2008-04-14

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Kouichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Kouichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

IPC分类号： H01L21/86

CPC分类号： H01L21/76254 ,  H01L21/3046 ,  H01L21/6835 ,  H01L27/1214 ,  H01L27/1266 ,  H01L2221/68359

摘要： When manufacturing a bonded substrate using an insulator substrate as a handle wafer, there is provided a method for manufacturing a bonded substrate which can be readily removed after carried and after mounted by roughening a back surface of the bonded substrate (corresponding to a back surface of the insulator substrate) and additionally whose front surface can be easily identified like a process of a silicon semiconductor wafer in case of the bonded substrate using a transparent insulator substrate as a handle wafer.There is provided a method for manufacturing a bonded substrate in which an insulator substrate is used as a handle wafer and a donor wafer is bonded to a front surface of the insulator substrate, the method comprises at least that a sandblast treatment is performed with respect to a back surface of the insulator substrate.

摘要翻译： 当制造使用绝缘体基板作为处理晶片的键合衬底时，提供了一种用于制造键合衬底的方法，其可以在承载和安装之后通过粗糙化粘合衬底的背面（对应于 绝缘体基板），另外，在使用透明绝缘体基板作为处理晶片的键合衬底的情况下，可以容易地识别其表面像硅半导体晶片的工艺。 提供了一种用于制造键合衬底的方法，其中使用绝缘体衬底作为把手晶片，并且施主晶片结合到绝缘体衬底的前表面，该方法至少包括相对于 绝缘体基板的背面。